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    • 1. 发明公开
    • LOW-LIGHT-FAILURE HIGH-POWER LED ROAD LAMP AND MANUFACTURING METHOD THEREFOR
    • 低光强大功率LED路灯及其制造方法
    • EP3015764A1
    • 2016-05-04
    • EP14816753.9
    • 2014-05-26
    • Chen, ZhimingGu, WeiSuzhou Weiyuan New Material Technology Co. Ltd.
    • CHEN, Zhiming
    • F21V29/00H01L23/367F21Y115/10
    • F21V29/76F21S8/086F21V29/51F21V29/54F21V29/71F21W2131/103F21Y2115/10H01L35/32H01L35/34
    • Disclosed is a low light failure high power LED street lamp and a method for manufacturing the same. A color mark is made in advance on a tail end surface used for manufacturing an N-type semiconductor element (6) or a P-type semiconductor element (7); then the N-type semiconductor element (6) and P-type semiconductor element (7) are arranged in a manner of matrix between an upper beryllium-oxide ceramic wafer (8) and a lower beryllium-oxide ceramic wafer (9), so that the head end of the N-type semiconductor element (6) is connected with the tail end of the P-type semiconductor element (7) or the tail end of the N-type semiconductor element (6) is connected with the head end of the P-type semiconductor element (7), then the lower beryllium-oxide ceramic wafer (9) is attached, through a graphene thermal conductive greaseon layer (4), on the backside of the circuit board (2) which is mounted with LED bulbs (3), and a heat sink (15) is mounted on the upper beryllium-oxide ceramic wafer (8), then the circuit board (2) together with the heat sink (15) are mounted into a street lamp housing (1).
    • 公开了一种低光衰大功率LED路灯及其制造方法。 在用于制造N型半导体元件(6)或P型半导体元件(7)的尾端表面上预先形成彩色标记; 则在上氧化铍陶瓷晶片(8)和下氧化铍陶瓷晶片(9)之间以矩阵方式布置N型半导体元件(6)和P型半导体元件(7),如此 所述N型半导体元件(6)的头端与所述P型半导体元件(7)的尾端连接或者所述N型半导体元件(6)的尾端与所述头端 (7)的背面上,然后通过石墨烯导热油脂层(4)将下氧化铍陶瓷片(9)附着在电路板(2)的背面上,所述电路板 在上氧化铍陶瓷片(8)上安装LED灯泡(3)和散热片(15),然后将电路板(2)与散热片(15)一起安装到路灯外壳 1)。
    • 10. 发明公开
    • APPARATUS AND METHOD FOR TREATMENT OF SKIN CONDITIONS USING LIGHT
    • GERÄTUND VERFAHREN ZUR BEHANDLUNG VON HAUTERKRANKUNGEN MIT LICHT
    • EP1587583A1
    • 2005-10-26
    • EP04704641.2
    • 2004-01-23
    • ENFIS LIMITED
    • JONES, GarethBOARD, KennethEVANS, Gareth Peter
    • A61N5/06
    • F21V29/54A61B18/203A61B2018/00023A61B2018/00452A61N5/0616A61N2005/0644A61N2005/0652F21V29/00F21V29/02F21V29/51F21Y2115/10H01L33/645H01L33/648
    • A method and apparatus for improving the cosmetic appearance of a region of skin (11) affected by Acne Vulgaris, Rosacea or similar skin condition by means of directing light radiation (12) from an illuminating device (1) on to the skin (11). The apparatus (10) comprises a control unit (9) that operates one or more LEDs (7) (light emitting diodes) of the illuminating device (1). Each dose of light radiation (12) lasts for at least 100ms, during which time the skin 11 receives light energy from the LED(s) (7), which causes a photochemical reaction that stimulates the production of free radicals (singlet oxygen) that react with, and at least partially disable or destroy, bacteria that contribute to the symptoms of the skin condition. The light energy directed on to the skin (11) during any given period of 10µs is less than 0.5 Jcm 2, and during any given period of 100ms is less than 5 Jcm-2. Substantially no beneficial photo-thermal reaction occurs within the skin (11). Light having wavelengths around 405nm and/or 585nm is used. The duration of a single dose may be much longer than 100ms and can last up to 10 hours (for overnight treatment).
    • 用于通过将照射装置1的光辐射12引导到皮肤11来改善受痤疮,红斑痤疮或类似皮肤状况影响的皮肤11的区域的化妆品外观的方法和装置。装置10包括控制单元 9照射照明装置1的一个或多个LED 7(发光二极管)。每个剂量的光辐射12持续至少100ms,在此期间皮肤11接收来自LED 7的光能,这导致 刺激与有助于皮肤病症状的细菌反应并且至少部分地禁用或破坏细菌的自由基(单线态氧)的产生的光化学反应。 任何给定时间段内指向皮肤11的光能均小于0.5Jcm -2,在100ms的任何给定期间小于5Jcm -2。 在皮肤11内部基本上没有发生有益的光热反应。使用波长约405nm和/或585nm的光。 单剂量的持续时间可能比100ms长得多,可持续长达10小时(用于隔夜治疗)。