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31. 发明专利

JP2012230328A Method for forming resist pattern and resist composition for negative development 有权
标题翻译：用于形成抗性图案和耐性组合物用于负面发展的方法
公开(公告)号：JP2012230328A
公开(公告)日：2012-11-22
申请号：JP2011099952
申请日：2011-04-27
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NITO TAKEHITO
IPC分类号： G03F7/038 , G03F7/039 , H01L21/027
CPC分类号： G03F7/325 , G03F7/0046 , G03F7/0397 , G03F7/11 , G03F7/2041
摘要： PROBLEM TO BE SOLVED: To provide a method for forming a resist pattern, and a resist composition.SOLUTION: The method for forming a resist pattern includes the steps of: forming a resist film on a support by using a resist composition containing a base component (A) whose solubility with an organic solvent decreases by an action of an acid, an acid generator component (B) generating an acid by exposure, and a fluorine-containing polymer compound; and forming a resist pattern by patterning the resist film by negative development using a developing solution containing an organic solvent. The base component (A) contains a resin component (A1) having a structural unit (a1) derived from an acrylate and containing an acid-decomposable group that shows increase in the polarity by the action of the acid. The dissolution rates of the resin component (A) and of the fluorine-containing polymer compound (F) with a developing solution are 10 nm/s or more, respectively, and an absolute difference in the dissolution rate of the resin component (A) and the fluorine-containing polymer compound (F) with a developing solution is 80 nm/s or less.
摘要翻译：要解决的问题：提供形成抗蚀剂图案的方法和抗蚀剂组合物。解决方案：形成抗蚀剂图案的方法包括以下步骤：通过使用含有与有机溶剂的溶解度随着酸的作用而降低的碱成分（A）的抗蚀剂组合物在载体上形成抗蚀剂膜，通过曝光产生酸的酸发生剂组分（B）和含氟聚合物化合物; 以及通过使用含有有机溶剂的显影溶液的负显影图案化抗蚀剂膜来形成抗蚀剂图案。基础成分（A）含有具有来自丙烯酸酯的结构单元（a1）的树脂成分（A1），其含有通过酸的作用显示极性升高的酸分解基团。树脂成分（A）和含氟高分子化合物（F）与显影液的溶解速度分别为10nm / s以上，树脂成分（A）的溶解速度的绝对差异，含显色液的含氟高分子化合物（F）为80nm / s以下。版权所有（C）2013，JPO＆INPIT

32. 发明专利

JP2012056955A New compound 有权
标题翻译：新化合物
公开(公告)号：JP2012056955A
公开(公告)日：2012-03-22
申请号：JP2011239702
申请日：2011-10-31
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： OGATA HISAYUKI , MATSUMARU SHOGO , KINOSHITA YOHEI , HANEDA HIDEO , SHIONO HIROHISA , SHIMIZU HIROAKI , KUBOTA NAOTAKA
IPC分类号： C07C69/54 , C07C67/10 , C08F20/28
摘要： PROBLEM TO BE SOLVED: To provide a new compound suitable for preparing a polymer compound which enables to obtain a highly sensitive photoresist composition which forms a fine pattern with excellent resolution and good rectangular shape, and gives good resist characteristics even when the acid generated by an acid generator is weak.SOLUTION: This compound is represented by general formula (2). In this formula, Rrepresents a 20 or smaller C cycloaliphatic group having an adamantane skeleton (except for a group having a carbonyl group); n represents 0 or an integer of 1 to 5; Rrepresents a hydrogen atom, a fluorine atom, or a 20 or smaller C lower alkyl group.
摘要翻译：要解决的问题：为了提供适合于制备高分子化合物的新化合物，其能够获得形成具有优异分辨率和良好矩形形状的精细图案的高灵敏度光致抗蚀剂组合物，并且即使在酸由酸发生器产生的是弱的。解决方案：该化合物由通式（2）表示。在该式中，R 1 表示具有金刚烷骨架的20个或更小的C脂环族基团（除了具有羰基的基团）; n表示0或1〜5的整数， R 2 表示氢原子，氟原子或20以下的C低级烷基。版权所有（C）2012，JPO＆INPIT

33. 发明专利

JP2011190455A Polymer compound, photoresist composition containing the polymer compound, and method for forming resist pattern 有权
标题翻译：聚合物化合物，含有聚合物化合物的光电组合物，以及形成电阻图案的方法
公开(公告)号：JP2011190455A
公开(公告)日：2011-09-29
申请号：JP2011111663
申请日：2011-05-18
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： OGATA HISAYUKI , MATSUMARU SHOGO , KINOSHITA YOHEI , HANEDA HIDEO , SHIONO HIROHISA , SHIMIZU HIROAKI , KUBOTA NAOTAKA
IPC分类号： C08F220/28 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To provide a polymer compound which enables to obtain a highly sensitive photoresist composition which forms a fine pattern with excellent resolution and good rectangular shape and is capable of obtaining good resist characteristics even when the acid generated by an acid generator is weak. SOLUTION: The polymer compound which exhibits changed alkali solubility under the action of an acid comprises constitutional units represented by general formula (2) (wherein R 1 represents an alicyclic group having 20 or less carbon atoms; n represents 0 or an integer of 1-5; and R 2 represents a hydrogen atom, a fluorine atom, a 1-20C lower alkyl group, or a fluorinated 1-20C lower alkyl group) and general formula (4) (wherein R 2 is the same as that of formula (2); X' represents a divalent or trivalent cyclic group; Y represents a divalent 1-6C alkylene or alkyleneoxy group, p and q each independently represent an integer of 1-5; and s represents an integer of 1 or 2). COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种高分子化合物，其能够获得形成具有优异分辨率和良好矩形形状的精细图案的高灵敏度光致抗蚀剂组合物，即使当由酸产生的酸时也能获得良好的抗蚀特性发电机很弱。解决方案：在酸的作用下显示出碱溶性变化的高分子化合物包括由通式（2）表示的结构单元（其中R 1 表示具有20个或更少碳原子的脂环族基团 n表示0或1-5的整数，R SB 2表示氢原子，氟原子，1〜20个碳原子的低级烷基或含氟1-20个碳原子的低级烷基）和通式（4）（其中R 2 与式（2）相同; X'表示二价或三价环状基团; Y表示二价的1-6C亚烷基或亚烷基氧基，p q各自独立地表示1-5的整数，s表示1或2的整数）。版权所有（C）2011，JPO＆INPIT

34. 发明专利

JP2010170053A Positive resist composition and resist pattern forming method 有权
标题翻译：积极抵抗组合和阻力图形成方法
公开(公告)号：JP2010170053A
公开(公告)日：2010-08-05
申请号：JP2009014710
申请日：2009-01-26
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , MORI YOSHITAKA , HIRANO ISAO , TSUCHIYA JUNICHI , NITO TAKEHITO , HIRANO TOMOYUKI , DAZAI NAOHIRO , MATSUMIYA YU , SHIONO HIROHISA
IPC分类号： G03F7/039 , C08F20/26 , G03F7/004 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a positive resist composition for forming a resist pattern of good profile with small LWR, and matching well with a substrate, and also to provide a resist pattern forming method. SOLUTION: The positive resist composition contains: a base component (A) which exhibits increased solubility in an alkali developer under the action of an acid; and an acid generator component (B) which generates an acid upon exposure. The base component (A) contains a polymeric compound (A1) having: a constitutional unit (a0) derived from a specific acrylic ester containing an aliphatic hydrocarbon group having a carboxyl group at a terminal; at least two kinds of constitutional units (a1) derived from an acrylic ester containing an acid-dissociable, dissolution-inhibiting group; and a constitutional unit (a2) derived from an acrylic ester containing a lactone-containing cyclic group. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于形成具有小LWR的良好轮廓的抗蚀剂图案的正性抗蚀剂组合物，并且与基底良好地匹配，并且还提供抗蚀剂图案形成方法。正性抗蚀剂组合物含有：在酸性作用下在碱性显影剂中表现出增加的溶解度的碱成分（A）和在曝光时产生酸的酸发生剂组分（B）。碱成分（A）含有具有以下成分的高分子化合物（A1）：由具有末端具有羧基的脂肪族烃基的特定丙烯酸酯衍生的结构单元（a0）至少两种衍生自含有酸解离的溶解抑制基团的丙烯酸酯的结构单元（a1）; 和由含有内酯的环状基团的丙烯酸酯衍生的结构单元（a2）。版权所有（C）2010，JPO＆INPIT

35. 发明专利

JP2010160446A Resist composition and resist pattern forming method 有权
标题翻译：电阻组合和电阻形成方法
公开(公告)号：JP2010160446A
公开(公告)日：2010-07-22
申请号：JP2009004060
申请日：2009-01-09
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIMIZU HIROAKI , NAKAMURA TAKESHI , TAKAHASHI MOTOKI
IPC分类号： G03F7/004 , C08F220/26 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition which enables a resist pattern of proper configuration to be formed, and to provide a resist pattern forming method that uses the resist composition. SOLUTION: The resist composition contains: a base component (A), which exhibits changed solubility in an alkali developer under the action of an acid; an acid generator component (B) which generates an acid upon exposure; and a nitrogen-containing compound (D). The nitrogen-containing organic compound (D) contains a compound (D1), represented by general formula (d1), wherein R 1 -R 4 are each independently an alkyl group which may have a substituent, and R 5 is a hydrocarbon group which may have a substituent. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够形成适当构造的抗蚀剂图案的抗蚀剂组合物，并提供使用抗蚀剂组合物的抗蚀剂图案形成方法。抗蚀剂组合物包含：碱性组分（A），其在酸性作用下在碱性显影剂中表现出改变的溶解度; 酸性发生剂组分（B），其在暴露时产生酸; 和含氮化合物（D）。含氮有机化合物（D）含有由通式（d1）表示的化合物（D1），其中R 1和R 2各自独立地为烷基其可以具有取代基，并且R 5是可以具有取代基的烃基。版权所有（C）2010，JPO＆INPIT

36. 发明专利

JP2010037215A Resist composition, method for forming resist pattern, new compound, and photobase generator 有权
标题翻译：耐蚀组合物，形成耐蚀图案的方法，新化合物和光致发色剂发生器
公开(公告)号：JP2010037215A
公开(公告)日：2010-02-18
申请号：JP2008198480
申请日：2008-07-31
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： UTSUMI YOSHIYUKI , MATSUZAWA KENSUKE , NAKAMURA TAKESHI , SHIMIZU HIROAKI
IPC分类号： C07C251/66 , C07C251/68 , G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a resist composition improving lithographic characteristics and forming a resist pattern of an excellent shape, a method for forming a resist pattern, a photobase generator for use in the resist composition, and a new compound useful as the photobase generator. SOLUTION: The resist composition comprising a base material component that changes its solubility to an alkali developer by the action of an acid, an acid generator component that generates an acid upon exposure to light, and a photobase generator component (F) that generates an alkali upon exposure to light, is characterized in that the photobase generator component (F) contains a photobase generator (F1) comprised of a compound represented by formula (f1) [in the formula, R and R" each represents a hydrogen atom or a 1-30C hydrocarbon group that may contain a substituent (provided that R and R" are bound to each other to form a ring in case R and R" both are 1-30C hydrocarbon groups that may contain a substituent); and R' represents an aryl group that may contain a substituent, or an alicyclic group]. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供改进光刻特性并形成具有优异形状的抗蚀剂图案的抗蚀剂组合物，形成抗蚀剂图案的方法，用于抗蚀剂组合物的光碱产生剂和用作光产生器。解决方案：抗蚀剂组合物包括通过酸的作用改变其对碱显影剂的溶解度的基材成分，以及在曝光时产生酸的酸产生剂组分和光碱产生剂组分（F），其中在光照下产生碱，其特征在于，所述光产物成分（F）含有由式（f1）表示的化合物构成的光碱产生剂（F1）[式中，R和R“各自表示氢原子或可以含有取代基的1-30℃烃基（条件是R和R“在R和R”的情况下彼此结合形成环，均为含有取代基的1-30C烃基）; R '表示可以含有取代基的芳基或脂环基]。版权所有（C）2010，JPO＆INPIT

37. 发明专利

JP2010002870A Resist composition for liquid immersion lithography, resist pattern forming method, and fluorine-containing polymer compound 有权
标题翻译：用于液体渗透光刻，耐蚀图案形成方法和含氟聚合物化合物的耐蚀组合物
公开(公告)号：JP2010002870A
公开(公告)日：2010-01-07
申请号：JP2008163861
申请日：2008-06-23
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： SHIONO HIROHISA , HIRANO TOMOYUKI , FURUYA SANAE , DAZAI NAOHIRO , SHIMIZU HIROAKI , KUROSAWA TSUYOSHI , NITO TAKEHITO , NAKAMURA TAKESHI
IPC分类号： G03F7/039 , C08F220/22 , G03F7/004 , H01L21/027
CPC分类号： C08F214/18 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： PROBLEM TO BE SOLVED: To provide a resist composition suitable for liquid immersion lithography, a resist pattern forming method using the resist composition, and a fluorine-containing polymer compound useful as an additive used in the resist composition. SOLUTION: The resist composition for liquid immersion lithography includes a fluorine-containing polymer compound (F) having a constitutional unit (f1) having a base-dissociable group and a constitutional unit (f2) represented by a specific structure, a base component (A) whose solubility in an alkali developer changes under the action of an acid, and an acid generator component (B) which generates an acid upon exposure to light. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供适用于液浸光刻的抗蚀剂组合物，使用该抗蚀剂组合物的抗蚀剂图案形成方法和用作抗蚀剂组合物中使用的添加剂的含氟聚合物化合物。解决方案：液浸光刻用抗蚀剂组合物包括具有碱解离基团的结构单元（f1）和由特定结构表示的结构单元（f2）的含氟聚合物化合物（F），碱在酸性显影剂中在碱性显影剂中的溶解度变化的组分（A）和在曝光时产生酸的酸产生剂组分（B）。版权所有（C）2010，JPO＆INPIT

38. 发明专利

JP2009294394A Compound, acid generator, resist composition and resist pattern forming method 有权
标题翻译：化合物，酸产生剂，抗菌组合物和抗性图案形成方法
公开(公告)号：JP2009294394A
公开(公告)日：2009-12-17
申请号：JP2008147188
申请日：2008-06-04
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： HANEDA HIDEO , UTSUMI YOSHIYUKI , SESHIMO TAKEHIRO , MATSUZAWA KENSUKE , NAKAMURA TAKESHI , SHIMIZU HIROAKI
IPC分类号： G03F7/004 , C07C309/09 , C07C381/12 , C07D307/33 , C08F20/10 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a compound suitable as an acid generator for a resist composition, an acid generator comprising the compound, a resist composition containing the acid generator, and a resist pattern forming method using the resist composition. SOLUTION: The resist composition contains a compound represented by general formula (b1-1), wherein R 00 is an alicyclic group; R 01 is a divalent linking group or a single bond; Y 1 is a 1-4C alkylene group which may be substituted by fluorine; and A + is a cation. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供适合作为抗蚀剂组合物的酸发生剂的化合物，包含该化合物的酸产生剂，含有酸产生剂的抗蚀剂组合物和使用该抗蚀剂组合物的抗蚀剂图案形成方法。解决方案：抗蚀剂组合物含有通式（b1-1）表示的化合物，其中R 00 是脂环族基团; R 01 是二价连接基团或单键; Y 1 是可被氟取代的1-4C亚烷基; 而A + 是阳离子。版权所有（C）2010，JPO＆INPIT

39. 发明专利

JP2009276404A Resist composition, resist pattern forming method, and novel compound 有权
标题翻译：耐蚀组合物，抗蚀剂图案形成方法和新化合物
公开(公告)号：JP2009276404A
公开(公告)日：2009-11-26
申请号：JP2008125303
申请日：2008-05-12
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： UTSUMI YOSHIYUKI , SHIMIZU HIROAKI , NAKAMURA TAKESHI , YOSHII YASUHIRO
IPC分类号： G03F7/004 , C07C305/06 , C07C309/19 , C07C381/12 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a novel compound useful as a quencher component for a resist composition, the resist composition containing the compound as the quencher component, and a resist pattern forming method. SOLUTION: This resist composition contains a base component A whose solubility to an alkali developer is changed by an action of an acid, an acid generator component B of generating an acid by light exposure, and the quencher component D. The quencher component D contains an onium salt D1 having no aromatic group in a cationic part, in the resist composition. COPYRIGHT: (C)2010,JPO&INPIT

40. 发明专利

JP2009191054A Novel compound, preparation method thereof, acid generator, resist composition and method for forming resist pattern 有权
标题翻译：新化合物，其制备方法，酸发生器，耐蚀组合物和形成耐蚀图案的方法
公开(公告)号：JP2009191054A
公开(公告)日：2009-08-27
申请号：JP2008036732
申请日：2008-02-18
申请人： Tokyo Ohka Kogyo Co Ltd , 東京応化工業株式会社
发明人： KAWAKAMI AKINARI , ISHIZUKA KEITA , MATSUZAWA KENSUKE , UTSUMI YOSHIYUKI , SHIMIZU HIROAKI
IPC分类号： C07D307/93 , C07C69/54 , C07C69/708 , G03F7/004 , G03F7/039
CPC分类号： C07D493/08 , C07D493/18 , G03F7/0045 , G03F7/0397
摘要： PROBLEM TO BE SOLVED: To provide a compound useful as an acid generator for a resist composition, a compound useful as a precursor for the compound, an acid generator, a resist composition and a method for forming a resist pattern. SOLUTION: The resist composition comprises a substrate component (A) of which solubility to an alkaline developer is modified by action of an acid and an acid generator component (B) which generates an acid upon exposure to light, provided that the acid generator component (B) comprises an acid generator (B1) comprising a compound represented by structural formula (b1-2). COPYRIGHT: (C)2009,JPO&INPIT

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