专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明申请

US20050199806A1 Apparatus and method for directing gas towards a specimen 有权
标题翻译：用于将气体引向试样的装置和方法
公开(公告)号：US20050199806A1
公开(公告)日：2005-09-15
申请号：US10799145
申请日：2004-03-12
申请人： Hagay Cafri , Eitan Pinhasi
发明人： Hagay Cafri , Eitan Pinhasi
IPC分类号： H01J37/02 , H01J37/28 , H01J37/305 , H01J37/32
CPC分类号： H01J37/28 , H01J37/026 , H01J37/3056 , H01J2237/006 , H01J2237/0213 , H01J2237/31744
摘要： The invention provides an apparatus and a method for directing gas towards a specimen, said apparatus includes: (i) means for directing a beam of charged particles towards the specimen; and (ii) a gas conduit providing gas to an area of incidence of said beam of charged particles onto said specimen. The gas conduit includes an intermediate portion having a first end for receiving the inert gas and a substantially sealed second end. The intermediate portion has a first and second apertures that are positioned such as to define a space through which the beam of charged particles can propagate. The intermediate portion is shaped such as to allow a first portion of the inert gas to exit the second aperture and to allow a second portion of the gas to propagate towards the second end and to be returned through the second aperture.
摘要翻译：本发明提供了一种用于将气体引导到试样的装置和方法，所述装置包括：（i）用于将带电粒子束引向样品的装置; 和（ii）气体导管，其向所述样品上的所述带电粒子束的入射区域提供气体。气体导管包括具有用于接收惰性气体的第一端和基本密封的第二端的中间部分。中间部分具有第一和第二孔，所述第一和第二孔被定位成限定了带电粒子束可以传播的空间。中间部分成形为允许惰性气体的第一部分离开第二孔，并允许气体的第二部分朝向第二端传播并通过第二孔返回。

92. 发明授权

US06914443B2 Apparatus and method for enhanced voltage contrast analysis 有权
标题翻译：用于增强电压对比度分析的装置和方法
公开(公告)号：US06914443B2
公开(公告)日：2005-07-05
申请号：US10426205
申请日：2003-04-29
申请人： Alon Litman , Chris Talbot
发明人： Alon Litman , Chris Talbot
IPC分类号： G01R31/311 , G01R31/305
CPC分类号： G01R31/307
摘要： A system and method is provided for testing the resistance of a test wafer having multiple conductors. Embodiments include a method having the steps of providing a signal that is substantially larger than a signal threshold to a test structure; and scanning at least two conductors of the test structure, that are electrically couplet to each other, by a limited voltage resolution SEM. Charged particles emitted from the at least two conductors as a result of the scanning are collected, thus providing an indication about a resistance of the at least two conductors.
摘要翻译：提供了一种用于测试具有多个导体的测试晶片的电阻的系统和方法。实施例包括具有以下步骤的方法：向测试结构提供基本上大于信号阈值的信号; 并且通过有限的电压分辨率SEM扫描测试结构的至少两个导体彼此电耦合。收集由扫描结果从至少两个导体发射的带电粒子，从而提供关于至少两个导体的电阻的指示。

93. 发明授权

US06897442B2 Objective lens arrangement for use in a charged particle beam column 有权
标题翻译：用于带电粒子束柱的物镜布置
公开(公告)号：US06897442B2
公开(公告)日：2005-05-24
申请号：US10423289
申请日：2003-04-25
申请人： Igor Petrov
发明人： Igor Petrov
IPC分类号： G01Q30/02 , H01J37/145 , H01J37/28 , H01J37/244
CPC分类号： H01J37/145 , H01J37/28
摘要： An objective lens arrangement is presented for mounting in a charged particle beam column adjacent to an anode tube that defines a beam drift space for a charged particle beam propagating towards a sample. The lens arrangement comprises a magnetic lens and an electrostatic lens, wherein the electrostatic lens includes upper and lower electrodes arranged in a spaced-apart coaxial relationship along an optical axis of the lens arrangement.
摘要翻译：提出了一种用于安装在邻近阳极管的带电粒子束列中的物镜布置，其限定了朝向样品传播的带电粒子束的波束漂移空间。透镜装置包括磁透镜和静电透镜，其中静电透镜包括沿着透镜装置的光轴以间隔开的同轴关系布置的上电极和下电极。

94. 发明授权

US06894294B2 System and method for reducing charged particle contamination 有权
标题翻译：减少带电粒子污染的系统和方法
公开(公告)号：US06894294B2
公开(公告)日：2005-05-17
申请号：US10600886
申请日：2003-06-19
申请人： Dror Shemesh
发明人： Dror Shemesh
IPC分类号： B08B7/00 , H01L21/306 , G21G5/00
CPC分类号： H01L21/02046 , B08B7/00 , B82Y10/00 , B82Y40/00 , H01J2237/31747
摘要： A system and method for reducing ion contamination in an object, the ion contamination introduced by a contaminating ion beam milling step. The system includes means for defining a suspected ion contaminated area; and means for removing the suspected ion contaminated area by a non-contaminating process, which usually involves directing an electron beam towards the removed area while allowing the beam to interact with additional material. The method includes the steps of defining a suspected ion contaminated area; and removing the suspected ion contaminated area by non-contaminating process.
摘要翻译：用于减少物体中的离子污染的系统和方法，通过污染离子束研磨步骤引入的离子污染物。该系统包括用于定义可疑离子污染区域的装置; 以及用于通过非污染过程去除可疑离子污染区域的装置，其通常涉及将电子束引向去除区域，同时允许光束与附加材料相互作用。该方法包括确定可疑离子污染区域的步骤; 并通过非污染过程去除可疑的离子污染区域。

95. 发明授权

US06862491B2 System and method for process variation monitor 有权
标题翻译：过程变化监控系统和方法
公开(公告)号：US06862491B2
公开(公告)日：2005-03-01
申请号：US10155255
申请日：2002-05-22
申请人： Evgeni Levin , Gilad Almogy , Efrat Rozenman
发明人： Evgeni Levin , Gilad Almogy , Efrat Rozenman
IPC分类号： G01N21/956 , G01N21/95 , G06T7/00 , H01L21/66 , G06F19/00
CPC分类号： G06T7/001 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/8896 , G06T2207/30148 , Y10S430/146
摘要： A method to extend the process monitoring capabilities of a semiconductor wafer optical inspection system so as to be able to detect low-resolution effects of process variations over the surface of a wafer at much higher sensitivity than heretofore possible. The method consists, in essence, of grouping sensed pixels by geometric blocks over the inspected surface and comparing each block with a corresponding one from another die on the same wafer, from another wafer or from a stored model image. In one embodiment of the invention, pixel values are compared directly and differences are thresholded at a considerably lower level than during a defects detection process. In another embodiment, there is calculated a signature for each block, based on the sensed light intensity values, and corresponding signatures are compared.
摘要翻译：扩展半导体晶片光学检查系统的过程监控能力的方法，以便能够以比以前更高的灵敏度检测晶片表面上的工艺变化的低分辨率效应。本方法基本上包括通过检查表面上的几何块对感测像素进行分组，并将每个块与来自另一个晶片上的另一个晶片的对应的一个块，从另一个晶片或从存储的模型图像进行比较。在本发明的一个实施例中，像素值被直接比较，并且差异以比在缺陷检测处理期间低得多的阈值阈值化。在另一个实施例中，基于感测的光强度值计算每个块的签名，并对相应的签名进行比较。

96. 发明申请

US20050010890A1 Design-based monitoring 有权
标题翻译：基于设计的监控
公开(公告)号：US20050010890A1
公开(公告)日：2005-01-13
申请号：US10780377
申请日：2004-02-17
申请人： Youval Nehmadi , Josephine Phua , Jacob Orbon , Ariel Ben-Porath , Evgeny Levin , Ofer Bokobza
发明人： Youval Nehmadi , Josephine Phua , Jacob Orbon , Ariel Ben-Porath , Evgeny Levin , Ofer Bokobza
IPC分类号： G03F1/00 , G03F1/14 , G06F17/50
CPC分类号： G03F1/84 , G03F1/36
摘要： A method for monitoring fabrication of an integrated circuit (IC) on a semiconductor wafer includes generating a product design profile (PDP) using an electronic design automation (EDA) tool, the PDP comprising an indication of a site in at least one layer of the IC that is susceptible to a process fault. Upon fabricating at least one layer of the IC on the wafer, a process monitoring tool is applied to perform a measurement at the site in at least one layer responsively to the PDP.
摘要翻译：一种用于监测半导体晶片上的集成电路（IC）的制造的方法包括使用电子设计自动化（EDA）工具生成产品设计简档（PDP），所述PDP包括至少一层中的位置的指示易受过程故障影响的IC。在晶片上制造至少一层IC时，应用过程监控工具，以响应于PDP在至少一层中在现场进行测量。

97. 发明申请

US20040084622A1 Specimen current mapper 失效
标题翻译：样本电流映射器
公开(公告)号：US20040084622A1
公开(公告)日：2004-05-06
申请号：US10695620
申请日：2003-10-27
申请人： Applied Materials Israel Ltd
发明人： Alexander Kadyshevitch , Dror Shemesh , Yaniv Brami , Dmitry Shur
IPC分类号： H01J037/252 , G01N023/225
CPC分类号： H01L22/34 , H01J37/32935 , H01J2237/281 , H01J2237/2815 , H01L21/67253 , H01L22/12 , H01L2924/3011
摘要： A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.
摘要翻译：一种用于过程监测的方法包括在第二层中产生接触开口之后，接收具有至少部分导电的第一层的样品和在第一层上形成的第二层。带电粒子束沿着光束轴线被引导，所述光束轴线基本上偏离于与样品表面的法线的角度，以便照射分布在至少一个区域上的多个位置中的每一个中的一个或多个接触开口的样品。响应于多个位置中的每一个处的一个或多个接触开口的照射来测量流过第一层的样本电流。产生至少样品区域的图，指示响应于多个位置处的照射测量的样本电流。

98. 发明申请

US20030219153A1 System and method for process variation monitor 有权
标题翻译：过程变化监控系统和方法
公开(公告)号：US20030219153A1
公开(公告)日：2003-11-27
申请号：US10155255
申请日：2002-05-22
申请人： Applied Materials Israel Ltd
发明人： Evgeni Levin , Gilad Almogy , Efrat Rozenman
IPC分类号： G06K009/00
CPC分类号： G06T7/001 , G01N21/9501 , G01N21/956 , G01N21/95607 , G01N2021/8896 , G06T2207/30148 , Y10S430/146
摘要： A method to extend the process monitoring capabilities of a semiconductor wafer optical inspection system so as to be able to detect low-resolution effects of process variations over the surface of a wafer at much higher sensitivity than heretofore possible. The method consists, in essence, of grouping sensed pixels by geometric blocks over the inspected surface and comparing each block with a corresponding one from another die on the same wafer, from another wafer or from a stored model image. In one embodiment of the invention, pixel values are compared directly and differences are thresholded at a considerably lower level than during a defects detection process. In another embodiment, there is calculated a signature for each block, based on the sensed light intensity values, and corresponding signatures are compared.
摘要翻译：扩展半导体晶片光学检查系统的过程监控能力的方法，以便能够以比以前更高的灵敏度检测晶片表面上的工艺变化的低分辨率效应。本方法基本上包括通过检查表面上的几何块对感测像素进行分组，并将每个块与来自另一个晶片上的另一个晶片的对应的一个块，从另一个晶片或从存储的模型图像进行比较。在本发明的一个实施例中，像素值被直接比较，并且差异以比在缺陷检测处理期间低得多的阈值阈值化。在另一个实施例中，基于感测的光强度值计算每个块的签名，并对相应的签名进行比较。

99. 发明申请

US20030218133A1 Charged particle beam column and method for directing a charged particle beam 有权
标题翻译：带电粒子束柱和引导带电粒子束的方法
公开(公告)号：US20030218133A1
公开(公告)日：2003-11-27
申请号：US10154530
申请日：2002-05-22
申请人： Applied Materials Israel Ltd
发明人： Igor Petrov , Zvika Rosenberg
IPC分类号： H01J037/28
CPC分类号： H01J37/28 , H01J37/1472 , H01J37/153 , H01J37/244
摘要： A method and charged particle beam column are presented for directing a primary charged particle beam onto a sample. The primary charged particle beam, propagating along an initial axis of beam propagation towards a focusing assembly, passes through a beam shaper, that affects the cross section of the primary charged particle beam to compensate for aberrations of focusing caused by astigmatism effect of a focusing field produced by an objective lens arrangement of the focusing assembly, and then passes through a beam axis alignment system, that aligns the axis of the primary charged particle beam with respect to the optical axis of the objective lens arrangement.
摘要翻译：提出了一种方法和带电粒子束柱，用于将初级带电粒子束引导到样品上。沿着波束传播的初始轴向聚焦组件传播的主要带电粒子束通过束形成器，其影响初级带电粒子束的横截面以补偿由聚焦场的散光效应引起的聚焦像差由聚焦组件的物镜布置产生，然后通过光束轴对准系统，其使主要带电粒子束的轴线相对于物镜装置的光轴对准。

100. 发明申请

US20030137659A1 Optical inspection using variable apodization 有权
公开(公告)号：US20030137659A1
公开(公告)日：2003-07-24
申请号：US10342566
申请日：2003-01-14
申请人： Applied Materials Israel Ltd.
发明人： Erel Milshtein
IPC分类号： G01N021/00
CPC分类号： G01N21/8806
摘要： A method for optical inspection of a surface includes selecting an apodization scheme in response to a characteristic of the surface, and applying an apodizer to apodize a beam of radiation in response to the selected apodization scheme. The apodized beam of radiation is directed to impinge on the surface, whereby a plurality of rays are scattered from the surface, and at least one of the scattered rays is detected, typically in order to detect a defect on the surface.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式