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91. 发明授权

US08295127B2 Communication apparatus 有权
标题翻译：通讯设备
公开(公告)号：US08295127B2
公开(公告)日：2012-10-23
申请号：US12167308
申请日：2008-07-03
申请人： Akira Tanaka
发明人： Akira Tanaka
IPC分类号： G04B47/00 , G04C3/00 , H04M1/00 , H04B1/38
CPC分类号： H04M1/72522 , G01S1/68 , H04W52/0261 , Y02D70/164
摘要： A communication apparatus having a main battery for performing main operations of the communication apparatus so as to connect or remove from the device freely. The communication apparatus includes a clock unit and a control unit. The clock unit configured to count a current time by using power supplied by the main battery, and configured to acquire the current time from a base station based on the main battery was connected after the main battery was removed the communication apparatus. And the control unit configured to control so as to set the current time acquired by the clock unit as the current time counted.
摘要翻译：一种具有主电池的通信装置，用于执行通信装置的主要操作以便自由地连接或从设备中移除。通信装置包括时钟单元和控制单元。被配置为通过使用由主电池提供的电力来计算当前时间的时钟单元，其被配置为在主电池被取出通信装置之后基于主电池从基站获取当前时间。并且所述控制单元被配置为控制以将由所述时钟单元获取的当前时间设置为当前时间计数。

92. 发明申请

US20120261641A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20120261641A1
公开(公告)日：2012-10-18
申请号：US13233375
申请日：2011-09-15
申请人： Akira Tanaka
发明人： Akira Tanaka
IPC分类号： H01L33/06
CPC分类号： H01L33/42 , H01L33/38 , H01L2933/0016
摘要： According to an embodiment, a semiconductor light emitting device includes a stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. A transparent electrode is provided on a first major surface of the stacked body on a side of the first semiconductor layer, the transparent electrode having a thin part, a first thick part thicker than the thin part, and a plurality of second thick parts thicker than the thin part and extending along the first major surface from the first thick part. A first electrode is provided on the first thick part; and a second electrode is electrically connected to the second semiconductor layer.
摘要翻译：根据实施例，半导体发光器件包括层叠体，其包括第一导电类型的第一半导体层，不同于第一导电类型的第二导电类型的第二半导体层，以及设置在第一导电类型之间的发光层半导体层和第二半导体层。透明电极设置在第一半导体层一侧的层叠体的第一主表面上，透明电极具有薄部分，比薄部分厚的第一厚部分，以及比第一半部分厚的多个第二厚部分薄部分并且沿着第一主表面从第一厚部分延伸。第一电极设置在第一厚部上; 并且第二电极电连接到第二半导体层。

93. 发明申请

US20120049159A1 LIGHT EMITTING DEVICE 失效
标题翻译：发光装置
公开(公告)号：US20120049159A1
公开(公告)日：2012-03-01
申请号：US13291176
申请日：2011-11-08
申请人： Akira Tanaka
发明人： Akira Tanaka
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/025 , H01L33/32 , H01S5/309 , H01S5/34333
摘要： A light emitting device includes: a first layer made of a semiconductor of a first conductivity type; a second layer made of a semiconductor of a second conductivity type; an active layer including a multiple quantum well provided between the first layer and the second layer, impurity concentration of the first conductivity type in each barrier layer of the multiple quantum well having a generally flat distribution or increasing toward the second layer, average of the impurity concentration in the barrier layer on the second layer side as viewed from each well layer of the multiple quantum well being equal to or greater than average of the impurity concentration in the barrier layer on the first layer side, and average of the impurity concentration in the barrier layer nearest to the second layer being higher than average of the impurity concentration in the barrier layer nearest to the first layer.
摘要翻译：发光器件包括：由第一导电类型的半导体制成的第一层; 由第二导电类型的半导体制成的第二层; 包括设置在第一层和第二层之间的多量子阱的有源层，多量子阱的每个势垒层中的第一导电类型的杂质浓度具有大致平坦的分布或朝着第二层增加，杂质的平均值从多量子阱的各阱层观察的第二层侧的阻挡层的浓度等于或大于第一层侧的阻挡层中的杂质浓度的平均值，以及最靠近第二层的阻挡层高于最靠近第一层的势垒层中的杂质浓度的平均值。

94. 发明申请

US20120018280A1 TRANSFERRED OBJECT ROTATING DEVICE 有权
标题翻译：转移对象旋转设备
公开(公告)号：US20120018280A1
公开(公告)日：2012-01-26
申请号：US13188443
申请日：2011-07-21
申请人： Tamotsu Hamao , Akira Tanaka , Eiji Kawata , Shuichi Akashi , Hiroyuki Kuroki
发明人： Tamotsu Hamao , Akira Tanaka , Eiji Kawata , Shuichi Akashi , Hiroyuki Kuroki
IPC分类号： B65G47/244
CPC分类号： B65G47/244 , H01L21/67736 , H01L21/67748 , H01L21/67751
摘要： A transferred object rotating device includes a mounting plate having an opening corresponding to a shape of a transferred object and being capable of moving from a mounting position to a rotating position, a boost unit capable of moving up to pass through the opening of the mounting plate in the rotating position, and a rotation plate capable of rotating about a power transmission shaft. The mounting plate moves to the rotating position after the transferred object is mounted on the mounting plate to close the opening. The transferred object is lifted by upward movement of the boost unit. The transferred object rotates while being sandwiched between the boost unit and the rotation plate. The transferred object mounted on the mounting plate in the mounting position can be transferred to the rotating position by the mounting plate, and rotate in the rotating position.
摘要翻译：传送对象旋转装置包括安装板，该安装板具有对应于被转移物体的形状的开口并且能够从安装位置移动到旋转位置，能够向上移动以通过安装板的开口的升压单元在旋转位置，以及能够围绕动力传递轴旋转的旋转板。在转印物体安装在安装板上之后，安装板移动到旋转位置以关闭开口。传送的物体被升压单元的向上运动提升。转印物体在夹在升压单元和旋转板之间的同时旋转。在安装位置安装在安装板上的转印物体可以通过安装板传递到旋转位置，并在旋转位置旋转。

95. 发明授权

US07968430B2 Compound semiconductor device and method for manufacturing same 有权
标题翻译：化合物半导体器件及其制造方法
公开(公告)号：US07968430B2
公开(公告)日：2011-06-28
申请号：US11850377
申请日：2007-09-05
申请人： Takayuki Matsuyama , Tadaaki Hosokawa , Seiji Iida , Akira Tanaka
发明人： Takayuki Matsuyama , Tadaaki Hosokawa , Seiji Iida , Akira Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L21/3043 , H01S5/0201 , H01S5/0202 , H01S5/32341
摘要： A compound semiconductor device includes a laminated body including a crystal substrate and a compound semiconductor multilayer film. The laminated body has a major surface, a first side face, a second side face, a third side face, and a fourth side face. The first and the second side faces are opposed to each other, substantially perpendicular to the major surface of the laminated body, made of cleaved surfaces. The third and the fourth side faces are perpendicular to the major surface and to the first and the second side faces, opposed to each other, and made of uncleaved surfaces. A groove is provided on the third side face, and the groove has a depth varied with position as viewed from the major surface, and has ends not reaching the first and second side face.
摘要翻译：化合物半导体器件包括具有晶体衬底和化合物半导体多层膜的层压体。层叠体具有主表面，第一侧面，第二侧面，第三侧面和第四侧面。第一和第二侧面彼此相对，基本上垂直于层叠体的主表面，由切割表面制成。第三和第四侧面垂直于主表面，并且彼此相对并且由未切割的表面制成的第一和第二侧面。在第三侧面设置有槽，并且，从主表面观察，槽的深度随着位置而变化，并且具有不到达第一和第二侧面的端部。

96. 发明申请

US20110119660A1 PROGRAM CONVERSION APPARATUS AND PROGRAM CONVERSION METHOD 审中-公开
标题翻译：程序转换装置和程序转换方法
公开(公告)号：US20110119660A1
公开(公告)日：2011-05-19
申请号：US13013367
申请日：2011-01-25
申请人： Akira TANAKA
发明人： Akira TANAKA
IPC分类号： G06F9/45
CPC分类号： G06F8/456 , G06F8/4441
摘要： A program conversion apparatus according to the present invention includes: a thread creation unit which creates a plurality of threads equivalent to a program part included in a program, based on path information on a plurality of execution paths, each of the execution paths going from a start to an end of the program part, each of the threads being equivalent to at least one of the execution paths; a replacement unit which performs variable replacement on the threads so that a variable shared by the threads is accessed by only to one of the threads in order to avoid an access conflict among the threads; and a thread parallelization unit which generates a program which causes the threads to be speculatively executed in parallel after the variable replacement.
摘要翻译：根据本发明的程序转换装置包括：线程创建单元，其基于关于多个执行路径的路径信息，创建与包括在程序中的程序部分相当的多个线程，每个执行路径从开始到程序部分的结束，每个线程等同于至少一个执行路径; 替换单元，其对线程执行可变替换，使得由线程共享的变量仅被访问到一个线程以避免线程之间的访问冲突; 以及线程并行化单元，其生成在可变替换之后并行地推测出线程的程序。

97. 发明申请

US20110101666A1 BOOKLET 审中-公开
标题翻译：小册子
公开(公告)号：US20110101666A1
公开(公告)日：2011-05-05
申请号：US12737361
申请日：2009-07-30
申请人： Tetsurou Tamaki , Takaaki Kiyose , Akira Tanaka , Takashi Oda
发明人： Tetsurou Tamaki , Takaaki Kiyose , Akira Tanaka , Takashi Oda
IPC分类号： B42D1/00
CPC分类号： B42D1/04 , B42C7/00 , B42C9/00 , B42C11/02 , B42D3/002 , B42D15/0006
摘要： Provided is a booklet including: a plurality of leaves 2; a spine 4 that couples bound edges of the leaves 2 via a flexible glue layer 3; and a front cover 5 and a back cover 6 each having at least an entire area of a surface portion continuing to an entire area of a surface portion of the spine 4, wherein a flexural strength of the spine 4 backed by the glue layer 3 is set such that the spine 4 is flexibly deformed inwardly at a near acute angle together with the bound edges of the leaves 2 when center pages of the leaves 2 are spread.
摘要翻译：提供了一种小册子，包括：多个叶子2; 通过柔性胶层3耦合叶片2的边缘的脊柱4; 以及前盖5和后盖6，其各自具有至少整个区域的表面部分连续到脊柱4的表面部分的整个区域，其中由胶层3支撑的脊柱4的弯曲强度为使得当叶片2的中心页面被展开时，脊柱4与叶片2的边缘边缘一起以近锐角向内柔性地向内弯曲变形。

98. 发明授权

US07841723B2 Projector using lamp, method and program for controlling discharge lamp light source 有权
标题翻译：投影机使用灯泡，方法和程序控制放电灯光源
公开(公告)号：US07841723B2
公开(公告)日：2010-11-30
申请号：US11726133
申请日：2007-03-21
申请人： Akira Tanaka
发明人： Akira Tanaka
IPC分类号： G03B21/14 , G02B27/14
CPC分类号： H05B41/2928 , G03B33/08 , H04N9/3155 , Y02B20/208
摘要： A projector comprises an alternating-current-drive lamp, a rotating color wheel which includes color segments for transmitting color lights and is disposed in an optical path from the lamp, the color segments including a transparent segment, a projection unit configured to form an optical image by the color lights transmitted through the color wheel, and a light source control unit configured to raise a drive frequency of the lamp in a period in which the transparent segment of the color wheel is present in the optical path from the lamp.
摘要翻译：投影机包括交流驱动灯，旋转色轮，其包括用于传输彩色光的色段，并且设置在从灯的光路中，所述色段包括透明片段，投影单元被配置为形成光学通过色轮传输的彩色图像的图像;以及光源控制单元，被配置为在来自灯的光路中存在色轮的透明段的时段内提高灯的驱动频率。

99. 发明授权

US07833792B2 Test strip measuring method 有权
标题翻译：试片测量方法
公开(公告)号：US07833792B2
公开(公告)日：2010-11-16
申请号：US11119704
申请日：2005-05-03
申请人： Masaaki Mori , Masao Ninomiya , Tomokuni Inoue , Eiji Ikegami , Akira Tanaka
发明人： Masaaki Mori , Masao Ninomiya , Tomokuni Inoue , Eiji Ikegami , Akira Tanaka
IPC分类号： G01N33/48
CPC分类号： G01N21/8483 , Y10T436/112499 , Y10T436/115831
摘要： In a test strip measuring method in which a coloration measurement is conducted while a test strip (4) is being moved, there are detected the optical characteristics R of the ground of a test strip and the optical characteristics T of a test line (4b) which has appeared on the test strip, and the test strip is judged based on the difference or ratio between R and T. Even though the ground of the test strip presents variations in optical characteristics, and even though there are variations among samples or among test strips, such variations can be absorbed, thus assuring an accurate judgment.
摘要翻译：在测试条（4）移动时进行着色测量的测试条测量方法中，检测测试条的接地的光学特性R和测试线（4b）的光学特性T，其出现在测试条上，并且基于R和T之间的差异或比例来判断测试条。即使测试条的地面呈现光学特性的变化，并且即使样品之间或测试中存在变化可以吸收这种变化，从而确保准确的判断。

100. 发明申请

US20100238963A1 Gallium nitride based semiconductor laser device 审中-公开
标题翻译：氮化镓基半导体激光器件
公开(公告)号：US20100238963A1
公开(公告)日：2010-09-23
申请号：US11476931
申请日：2006-06-29
申请人： Akira Tanaka
发明人： Akira Tanaka
IPC分类号： H01S5/343 , H01S5/34
CPC分类号： H01S5/2231 , B82Y20/00 , H01S5/2013 , H01S5/2214 , H01S5/34333 , H01S2301/18
摘要： A gallium nitride based semiconductor laser device comprises: a first cladding layer having a first conductivity type; an active layer provided on the first cladding layer; an overflow prevention layer having a second conductivity type provided on the active layer; and a second cladding layer having the second conductivity type provided on the overflow prevention layer. The second cladding layer has a ridge portion and a non-ridge portion, and is made of an AlxGa1-xN (0.015≦x≦0.040). Alternatively, the second cladding layer has a superlattice layer of AlyGa1-yN (0.015≦y≦1) layers and GaN layers with an average aluminum composition ratio of 0.015 or more and 0.040 or less. A thickness of the ridge portion is not less than a thickness of the non-ridge portion and not more than 0.45 micrometers.
摘要翻译：一种氮化镓系半导体激光器件包括：具有第一导电类型的第一覆层; 设置在所述第一包层上的有源层; 具有设置在所述有源层上的第二导电类型的溢出防止层; 以及设置在溢流防止层上的具有第二导电类型的第二包覆层。第二包覆层具有脊部和非脊部，并且由Al x Ga 1-x N（0.015＆amp; N e; x＆nl; 0.040）制成。或者，第二包层具有AllyGa1-yN（0.015＆lt; 1l和y＆nlE; 1）层的超晶格层和平均铝组成比为0.015以上且0.040以下的GaN层。脊部的厚度不小于非脊部的厚度，不大于0.45微米。

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