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    • 96. 发明授权
    • Single field zero mask for increased alignment accuracy in field stitching
    • 单场零掩模,用于提高场拼接中的对准精度
    • US08563202B2
    • 2013-10-22
    • US13864895
    • 2013-04-17
    • Micrel, Inc.
    • Arthur Lam
    • G03F9/00G03C5/00
    • G03F7/2022G03F1/42G03F1/50G03F7/70475G03F9/708
    • A method for stitching a first field mask to a second field mask on a wafer includes providing a photomask with a first set of targets and a second set of targets, printing images of the first set of targets and the second set of targets onto the wafer where the photomask is applied to the wafer having no previous alignment marks formed thereon for the photomask to align to. A first set of alignment marks is formed from the first set of targets and a second set of alignment marks is formed from the second set of targets. The method includes aligning a first field mask to the first set of alignment marks and aligning a second field mask to the second set of alignment marks. The images of the first field mask and the second field mask are thereby stitched together on the wafer.
    • 用于将第一场掩模拼接到晶片上的第二场掩模的方法包括:提供具有第一组靶和第二组靶的光掩模,将第一组靶和第二组靶的图像打印到晶片上 其中将光掩模应用于其上没有形成其上的先前对准标记的晶片,以使光掩模对准。 从第一组目标形成第一组对准标记,并且从第二组目标形成第二组对准标记。 该方法包括将第一场掩模与第一组对准标记对准,并将第二场掩模与第二组对准标记对准。 因此,第一场掩模和第二场掩模的图像在晶片上被缝合在一起。
    • 99. 发明授权
    • Charged particle beam writing apparatus and charged particle beam writing method
    • 带电粒子束写入装置和带电粒子束写入方法
    • US08552405B2
    • 2013-10-08
    • US13647665
    • 2012-10-09
    • NuFlare Technology, Inc.
    • Yasuo KatoJun Yashima
    • H01J3/14G21K5/10G03C5/00
    • H01J37/3174B82Y10/00B82Y40/00H01J2237/304H01J2237/31769
    • A charged particle beam writing apparatus includes a unit to calculate a gradient of a convolution amount that is calculated from a convolution operation between an area density and a distribution function, a unit to calculate a small influence radius phenomenon dose correction coefficient that corrects for dimension variation due to a phenomenon whose influence radius is on an order of microns or less, by using the convolution amount and the gradient, a unit to calculate a proximity effect dose correction coefficient that corrects for dimension variation due to a proximity effect, by using a first function depending on the small influence radius phenomenon dose correction coefficient, a unit to calculate a dose by using the proximity effect dose correction coefficient and the small influence radius phenomenon dose correction coefficient, and a unit to write a figure pattern concerned on a target object, based on the dose.
    • 带电粒子束写入装置包括:计算从区域密度和分布函数之间的卷积运算计算的卷积量的梯度的单位,计算校正尺寸变化的小影响半径现象剂量校正系数的单位 由于通过使用卷积量和梯度,其影响半径在微米级以下的现象,通过使用第一方法来计算校正由于邻近效应引起的尺寸变化的邻近效应剂量校正系数的单位 功能取决于小影响半径现象剂量校正系数,单位通过使用邻近效应剂量校正系数和小影响半径现象剂量校正系数计算剂量,并且单位在目标对象上写入图形模式, 基于剂量。