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91. 发明申请

US20080257261A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20080257261A1
公开(公告)日：2008-10-23
申请号：US11738505
申请日：2007-04-22
申请人： Hiroji Hanawa , Andrew Nguyen , Keiji Horiaka , Kallol Bera , Kenneth S. Collins , Lawrence Wong , Martin Jeff Salinas , Roger Alan Lindley , Hong S. Yang
发明人： Hiroji Hanawa , Andrew Nguyen , Keiji Horiaka , Kallol Bera , Kenneth S. Collins , Lawrence Wong , Martin Jeff Salinas , Roger Alan Lindley , Hong S. Yang
IPC分类号： H05H1/00
CPC分类号： H01J37/3266 , H01J37/32623
摘要： Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.
摘要翻译：本发明的实施例涉及等离子体处理装置及其使用方法。在一些实施例中，等离子体控制磁体组件包括以预定图案布置的多个磁体，其在靠近组件的区域中产生强度大于10高斯的磁场，并且在远离组件的区域中小于10高斯。

92. 发明申请

US20080246406A1 Helicon plasma source with permanent magnets 失效
标题翻译： Helicon等离子源与永磁体
公开(公告)号：US20080246406A1
公开(公告)日：2008-10-09
申请号：US12003330
申请日：2007-12-21
申请人： Francis F. Chen
发明人： Francis F. Chen
IPC分类号： H05H1/00 , H01J61/28
CPC分类号： H05H1/46 , H01J37/32082 , H01J37/3211 , H01J37/32128
摘要： A helicon plasma source has a discharge tube, a radio frequency antenna disposed proximate the discharge tube, and a permanent magnet positioned with respect to the discharge tube so that the discharge tube is in a far-field region of a magnetic field produced by the permanent magnet.
摘要翻译：螺旋等离子体源具有放电管，靠近放电管设置的射频天线以及相对于放电管定位的永久磁铁，使得放电管位于由永久磁场产生的磁场的远场区域中磁铁。

93. 发明申请

US20080246100A1 HIGH-K DIELECTRIC FILM, METHOD OF FORMING THE SAME AND RELATED SEMICONDUCTOR DEVICE 有权
标题翻译：高K介电膜，其形成方法和相关半导体器件
公开(公告)号：US20080246100A1
公开(公告)日：2008-10-09
申请号：US12117274
申请日：2008-05-08
申请人： Kil-Ho Lee , Chan Lim
发明人： Kil-Ho Lee , Chan Lim
IPC分类号： H01L29/78 , H01L29/02 , B05D5/12 , H05H1/00
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L29/513 , H01L29/518 , H01L2924/0002 , Y10S257/914 , H01L2924/00
摘要： A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.
摘要翻译：提供了高k电介质膜，形成高k电介质膜的方法以及形成相关半导体器件的方法。高k电介质膜包括具有第一氮含量和第一硅含量的金属 - 氮氧化硅的底层和具有第二氮含量和第二硅含量的金属 - 氮氧化硅的顶层。第二氮含量高于第一氮含量，第二硅含量高于第一硅含量。

94. 发明申请

US20080237030A1 SURFACE PROCESSING METHOD FOR MOUNTING STAGE 有权
标题翻译：安装阶段的表面处理方法
公开(公告)号：US20080237030A1
公开(公告)日：2008-10-02
申请号：US12057975
申请日：2008-03-28
申请人： Tadashi Aoto , Eiichiro Kikuchi , Masakazu Higuma , Kimihiro Higuchi
发明人： Tadashi Aoto , Eiichiro Kikuchi , Masakazu Higuma , Kimihiro Higuchi
IPC分类号： B29C61/04 , H05H1/00
CPC分类号： H01L21/67103 , H01L21/6875
摘要： A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.
摘要翻译：一种用于安装台的表面处理方法，其能够在节省时间和精力的同时形成符合基板的安装表面。基板安装在安装台的安装表面上，该安装台设置在基板处理设备的容纳室中，该基板处理设备在基板上执行等离子体处理。安装的基板被热膨胀。

95. 发明申请

US20080213821A1 Microfluidic Cell Sorter System 审中-公开
标题翻译：微流控细胞分选系统
公开(公告)号：US20080213821A1
公开(公告)日：2008-09-04
申请号：US11579074
申请日：2005-05-06
申请人： Ai Qun Liu , Xiao Jun Liang , Xu Ming Zhang , Yi Sun , Peter Droge
发明人： Ai Qun Liu , Xiao Jun Liang , Xu Ming Zhang , Yi Sun , Peter Droge
IPC分类号： C12M1/34 , C12M1/36 , C12Q1/20 , H05H1/00
CPC分类号： G01N15/1484 , B01L3/502761 , B01L3/502776 , B01L2200/0636 , B01L2200/0647 , B01L2300/0645 , B01L2300/0654 , B01L2300/0816 , B01L2300/0864 , B01L2400/0418 , B01L2400/0622 , B81B2201/058 , B81C1/00444 , G01N15/1459 , G01N2015/149
摘要： A microfluidic system for separating, purifying and counting cell sub-populations, utilising steering of liquid flows in microfluidic channels in a cell focusing region (first dotted circle area); having the integration of the optical detection mechanism and a microchannel structure made from moulding. A master is photolithographically patterned on a soft PDMS silicon or polymer material. After being moulded and peeled off the master, the micro-channel structure is sealed on a hard substrate with openings punched through for wells (14, 12, 36, 38, 40). An optical detection region (20) discriminates different types of cells that have been formed into a single flow (30). Electromagnetic fields are used to steer (32) the flows of cells according to the signals from the optical detection region into branch channels leading to the punched wells for separate collection. The system can have parallel systems that increase throughput or cascade systems to provide several analysis steps. The optical system an micro-lens (24) for the system can be imbedded in the moulding material during formation of the mould.
摘要翻译：一种用于分离，纯化和计数细胞亚群的微流体系统，利用在细胞聚焦区域（第一虚线圆形区域）的微流体通道中的液体流的转向; 具有光学检测机构的一体化和由成型制成的微通道结构。在软PDMS硅或聚合物材料上光刻成型的母版。在模制和剥离主体之后，微通道结构被密封在具有穿孔的开口（14,12,36,38,40）的硬质基底上。光学检测区域（20）区分已形成单个流（30）的不同类型的单元。电磁场用于根据来自光学检测区域的信号将细胞流引导（32）到分支通道，通向冲孔以便分开收集。该系统可以具有增加吞吐量或级联系统的并行系统，以提供多个分析步骤。用于系统的微透镜（24）的光学系统可以在模具形成期间嵌入模制材料中。

96. 发明申请

US20080206483A1 PLASMA PROCESS FOR INDUCTIVELY COUPLING POWER THROUGH A GAS DISTRIBUTION PLATE WHILE ADJUSTING PLASMA DISTRIBUTION 有权
标题翻译：通过调整等离子体分配的气体分配板进行电感耦合等离子体处理
公开(公告)号：US20080206483A1
公开(公告)日：2008-08-28
申请号：US11679122
申请日：2007-02-26
申请人： ALEXANDER PATERSON , Valentin N. Todorov , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond , John P. Holland
发明人： ALEXANDER PATERSON , Valentin N. Todorov , Theodoros Panagopoulos , Brian K. Hatcher , Dan Katz , Edward P. Hammond , John P. Holland
IPC分类号： H05H1/00
CPC分类号： H01J37/32082 , C23C16/505 , H01J37/32091 , H01J37/321 , H01J37/3244
摘要： A method of processing a workpiece in the chamber of a plasma reactor having a ceiling overlying the workpiece by introducing a process gas into the chamber through a gas distribution plate in the ceiling. The gas is introduced by distributing gas flow from a first gas input to plural gas distribution orifices extending through a manifold of the gas distribution plate, and distributing gas flow from each of the plural gas distribution orifices to plural gas injection orifices in a showerhead of the gas distribution plate. The method further includes restricting gas flow in the gas distribution plate to paths having arcuate lengths about an axis of symmetry less than a complete circle. The method also includes capacitively and inductively coupling plasma source power into the chamber through the gas distribution. The method further includes adjusting the plasma ion density radial distribution in the process region by adjusting the ratio between the amounts of the capacitively coupled VHF power and the inductively coupled power.
摘要翻译：一种在等离子体反应器的腔室中处理工件的方法，该等离子体反应器具有通过天花板中的气体分配板将工艺气体引入室中，该顶板覆盖工件。通过将气体流从第一气体输入分配到延伸穿过气体分配板的歧管的多个气体分配孔，并将气体流从多个气体分配孔中的每一个分配到多个气体喷射孔中，从而引入气体气体分配板。该方法还包括将气体分配板中的气流限制在具有小于完整圆的对称轴的弧形长度的路径上。该方法还包括通过气体分布将等离子体源功率电容和电感耦合到腔室中。该方法还包括通过调节电容耦合VHF功率和电感耦合功率的量之间的比例来调节处理区域中的等离子体离子密度径向分布。

97. 发明申请

US20080179181A1 METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR WITH VARIABLE HEIGHT GROUND RETURN PATH TO CONTROL PLASMA ION DENSITY UNIFORMITY 有权
标题翻译：在具有可变高度接地返回路径的等离子体反应器中处理工件的方法来控制等离子体密度均匀性
公开(公告)号：US20080179181A1
公开(公告)日：2008-07-31
申请号：US11733984
申请日：2007-04-11
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Kartik Ramaswamy , Douglas A. Buchberger , Shahid Rauf , Kallol Bera , Lawrence Wong , Walter R. Merry , Matthew L. Miller , Steven C. Shannon , Andrew Nguyen , James P. Cruse , James Carducci , Troy S. Detrick , Subhash Deshmukh , Jennifer Y. Sun
IPC分类号： H05H1/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165
摘要： A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.
摘要翻译：用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率以第一VHF频率f 1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极工件支撑电极为频率f 1。该方法还包括提供可变高度边缘接地环形元件，并为频率f 1提供通过边缘接地环形元件的接地返回路径。该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

98. 发明申请

US20080164819A1 Semiconductor apparatus using ion beam 审中-公开
标题翻译：使用离子束的半导体装置
公开(公告)号：US20080164819A1
公开(公告)日：2008-07-10
申请号：US12007187
申请日：2008-01-08
申请人： Sung-Wook Hwang , Yung Hee Yvette Lee , Chul-Ho Shin , Jin-Seok Lee
发明人： Sung-Wook Hwang , Yung Hee Yvette Lee , Chul-Ho Shin , Jin-Seok Lee
IPC分类号： G21K1/00 , H05H1/00 , G21K1/14
CPC分类号： H01J37/305 , H01J27/024 , H01J37/08 , H01J37/3171 , H01J2237/0041 , H01J2237/061
摘要： Provided is a semiconductor apparatus using an ion beam. The semiconductor apparatus may include a first grid to which a voltage applied. The voltage applied to the first grid may have the same potential level as that of a reference voltage applied to a wall portion of a plasma chamber in which plasma may be generated. The first grid may adjoin the plasma. Therefore, a potential level difference between the first grid and the wall portion of the plasma chamber may be zero, and thus the plasma may be stable.
摘要翻译：提供了使用离子束的半导体装置。半导体装置可以包括施加电压的第一栅极。施加到第一栅极的电压可以具有与施加到其中可能产生等离子体的等离子体室的壁部分的参考电压相同的电位电平。第一个栅格可能与等离子体相邻。因此，等离子体室的第一栅极和壁部之间的电位差可以为零，因此等离子体可以是稳定的。

99. 发明申请

US20080132009A1 Substrate, device, method of manufacturing device, method of manufacturing active matrix substrate, electro-optical apparatus and electronic apparatus 失效
标题翻译：基板，装置，制造装置的方法，制造有源矩阵基板的方法，电光装置和电子装置
公开(公告)号：US20080132009A1
公开(公告)日：2008-06-05
申请号：US12005627
申请日：2007-12-28
申请人： Toshimitsu Hirai
发明人： Toshimitsu Hirai
IPC分类号： H01L21/336 , B05D3/00 , H05H1/00
CPC分类号： C03C17/34 , C03C17/3411 , C03C2217/475 , C03C2217/479 , C03C2218/32 , H01L21/288 , H01L21/76838 , H01L27/1292 , H01L27/3246 , H01L29/4908 , H01L29/66765 , H01L51/0005 , H01L51/5284 , Y10T428/24802
摘要： A substrate on which a pattern is formed by a discharged functional liquid, includes a coating region coated with the functional liquid, and banks formed to enclose the coating region, wherein a difference between a contact angle of the functional liquid with respect to the coating region and a contact angle of the functional liquid with respect to the bank is above 40°.
摘要翻译：由排出的功能液体形成图案的基板包括被涂覆有功能液体的涂布区域和形成为包围涂布区域的堤，其中功能液体相对于涂布区域的接触角之间的差异并且功能液体相对于堤岸的接触角高于40°。

100. 发明申请

US20080122368A1 METHODS OF GENERATING PLASMA, OF ETCHING AN ORGANIC MATERIAL FILM, OF GENERATING MINUS IONS, OF OXIDATION AND NITRIDING 失效
标题翻译：产生等离子体的方法，蚀刻有机材料膜，产生阴离子，氧化和氮化
公开(公告)号：US20080122368A1
公开(公告)日：2008-05-29
申请号：US11843771
申请日：2007-08-23
申请人： Takao Saito , Yoshimasa Kondo , Tatsuya Terazawa
发明人： Takao Saito , Yoshimasa Kondo , Tatsuya Terazawa
IPC分类号： H05H1/00
CPC分类号： H01J37/32027 , H01L21/28202 , H01L21/31138 , H01L21/3146 , H01L21/3185
摘要： A direct current pulse voltage is applied on a treatment gas to generate a discharge plasma. The duty ratio of the direct current pulse voltage is controlled within the range of 0.0001% or more and 8.0% or less. The rise time of the direct current pulse voltage is controlled in the range of not lower than 0.1 V/nsec and not higher than 10000 V/nsec. Alternatively, a positive pulse and a negative pulse are applied from a single power source for performing the discharge plasma and the impurity implantation.
摘要翻译：在处理气体上施加直流脉冲电压以产生放电等离子体。直流脉冲电压的占空比控制在0.0001％以上且8.0％以下的范围内。直流脉冲电压的上升时间控制在不低于0.1V / nsec且不高于10000V / ns的范围内。或者，从用于执行放电等离子体和杂质注入的单个电源施加正脉冲和负脉冲。

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