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11. 发明授权

US09275713B2 Magnetoresistive element and method of manufacturing the same 有权
标题翻译：磁阻元件及其制造方法
公开(公告)号：US09275713B2
公开(公告)日：2016-03-01
申请号：US14157493
申请日：2014-01-16
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： G11C11/00 , G11C11/16 , H01L43/12 , H01L43/08 , H01L27/22
CPC分类号： H01L43/12 , G11C11/00 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A planar STT-MRAM comprises apparatus, a method of operating and a method of manufacturing a spin-torque magnetoresistive memory and a plurality of magnetoresistive memory element having a ferromagnetic recording layer forming a flux closure with a self-aligned ferromagnetic soft adjacent layer which has an electric field enhanced perpendicular anisotropy through an interface interaction with a dielectric functional layer. The energy switch barrier of the soft adjacent layer is reduced under an electric field along a perpendicular direction with a proper voltage on a digital line from a control circuitry; accordingly, the in-plane magnetization of the recording layer is readily reversible in a low spin-transfer switching current.
摘要翻译：平面STT-MRAM包括装置，操作方法和制造自旋转矩磁阻存储器的方法以及具有铁磁记录层的多个磁阻存储元件，所述铁磁记录层形成具有自对准铁磁软相邻层的磁通闭合层，电场通过与介电功能层的界面相互作用增强垂直各向异性。柔性相邻层的能量开关势垒沿着垂直方向的电场在来自控制电路的数字线上具有适当的电压而减小; 因此，记录层的平面内磁化在低自旋转移开关电流中容易可逆。

12. 发明授权

US11094877B2 Method for making MRAM with small dimension and high qulity 有权
公开(公告)号：US11094877B2
公开(公告)日：2021-08-17
申请号：US15081875
申请日：2016-03-26
申请人： Rongfu Xiao
发明人： Rongfu Xiao
IPC分类号： H01L43/12 , H01L43/02 , H01L43/08 , H01L43/10
摘要： This invention is about a method to make an MRAM element with small dimension, by making an MTJ as close as possible to the via, ideally aligning the MTJ and the via in a direction perpendicular to the wafer surface, for making the MRAM element dimension as small as possible. The invention provides a process scheme to flatten the interface of bottom electrode during film deposition, which ensures a good deposition of atomically smooth MTJ multilayer as close as possible to an associated via which otherwise might be atomically rough. The flattening scheme is first to deposit a thin amorphous conducting layer in the middle of BE deposition and immediately to bombard the amorphous layer by low energy ions to provide kinetic energy for surface atom diffusion to move from high point to low kinks. With such surface flattening scheme, not only the MRAM element can be made extremely small, but its device performance and magnetic stability can also be greatly improved.

13. 发明授权

US09960237B2 Termination structure with multiple embedded potential spreading capacitive structures for trench MOSFET 有权
公开(公告)号：US09960237B2
公开(公告)日：2018-05-01
申请号：US14684570
申请日：2015-04-13
申请人： Alpha and Omega Semiconductor Incorporated
发明人： Xiaobin Wang , Anup Bhalla , Hamza Yilmaz , Daniel Ng
IPC分类号： H01L29/66 , H01L29/40 , H01L29/78 , H01L21/762 , H01L29/06 , H01L29/417 , H01L29/423 , H01L29/04
CPC分类号： H01L29/407 , H01L21/76205 , H01L29/04 , H01L29/0619 , H01L29/0638 , H01L29/0649 , H01L29/0696 , H01L29/402 , H01L29/41766 , H01L29/42368 , H01L29/66727 , H01L29/66734 , H01L29/7803 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) and method are disclosed for terminating an adjacent trench MOSFET atop a bulk semiconductor layer (BSL) with bottom drain electrode. The BSL has a proximal bulk semiconductor wall (PBSW) supporting drain-source voltage (DSV) and separating TSMEC from trench MOSFET. The TSMEC has oxide-filled large deep trench (OFLDT) bounded by PBSW and a distal bulk semiconductor wall (DBSW). The OFLDT includes a large deep oxide trench into the BSL and embedded capacitive structures (EBCS) located inside the large deep oxide trench and between PBSW and DBSW for spatially spreading the DSV across them. In one embodiment, the EBCS contains interleaved conductive embedded polycrystalline semiconductor regions (EPSR) and oxide columns (OXC) of the OFLDT, a proximal EPSR next to PBSW is connected to an active upper source region and a distal EPSR next to DBSW is connected to the DBSW.

14. 发明授权

US09704948B2 Power trench MOSFET with improved unclamped inductive switching (UIS) performance and preparation method thereof 有权
公开(公告)号：US09704948B2
公开(公告)日：2017-07-11
申请号：US14455877
申请日：2014-08-09
申请人： Alpha and Omega Semiconductor Incorporated
发明人： Yongping Ding , Hamza Yilmaz , Xiaobin Wang , Madhur Bobde
IPC分类号： H01L29/06 , H01L29/78 , H01L29/73 , H01L29/66 , H01L29/423 , H01L29/40 , H01L21/311
CPC分类号： H01L29/0626 , H01L21/31144 , H01L21/743 , H01L21/823475 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/66727 , H01L29/66734 , H01L29/7811 , H01L29/7813
摘要： A trench type power semiconductor device with improved breakdown voltage and UIS performance and a method for preparation the device are disclosed. The trench type power semiconductor device includes a first contact hole formed in a mesa in the active area and a second contact hole formed in a mesa in an active to termination intermediate area, where the first contact hole is deeper and wider than the second contact hole.

15. 发明授权

US09664714B2 Methods and devices for detecting the input voltage and discharging the residuevoltage 有权
公开(公告)号：US09664714B2
公开(公告)日：2017-05-30
申请号：US14670918
申请日：2015-03-27
申请人： Alpha and Omega Semiconductor (Cayman) Ltd.
发明人： Yu-Ming Chen , Chih-Yuan Liu , Pei-Lun Huang
IPC分类号： G01R19/00 , G01R19/22 , H02M7/04 , H02M1/32
CPC分类号： G01R19/22 , G01R19/0007 , H02M1/32 , H02M2001/322
摘要： The present invention relates to power conversion systems, specifically, it relates to a device for detecting the DC voltage rectified from the AC power supply voltage in an AC-DC converter, primarily used to determine whether the DC input voltage is under a brown-out level and to monitor whether the AC power supply is removed and to discharge the residue DC voltage generated in a high frequency filter capacitor, which is used to filter high frequency noise signals of the AC power supply, during the removal of the AC power.

16. 发明授权

US09583698B2 Magnetoresistive element having a novel recording multilayer 有权
标题翻译：具有新型记录多层的磁阻元件
公开(公告)号：US09583698B2
公开(公告)日：2017-02-28
申请号：US15175029
申请日：2016-06-06
申请人： T3MEMORY, INC.
发明人： Yimin Guo
IPC分类号： H01L43/08 , H01L43/12 , G11C11/16 , H01L43/02 , H01L43/10
CPC分类号： H01L43/08 , G11C11/161 , H01L43/02 , H01L43/10 , H01L43/12
摘要： A magnetoresistive element has a crystalline structural quality and magnetic anisotropy enhancement bilayer (CSMAE bilayer) with a). enhanced the crystalline structural quality, hence fabrication yield, of the resulting magnetoresistive element; and b). enhanced the magnetic anisotropy of the recording layer whereby achieving a high MR ratio for the magnetoresistive element with a simultaneous reduction of an undesirable spin pumping effect. As the magnetoresistive film is thermally annealed, a crystallization process occurs to form bcc CoFe grains having epitaxial growth with (100) plane parallel to the surface of the tunnel barrier layer as Boron elements migrate into the impurity absorbing layer. Removing the top portion of the impurity absorbing layer by means of sputtering etch or RIE etch processes followed by optional oxidization process, a thin but thermally stable portion of impurity absorbing layer is formed on top of the magnetoresistive element with a low damping constant. Accordingly, a reduced write current can be achieved for spin-transfer torque MRAM application.
摘要翻译：磁阻元件具有结晶结构质量和磁各向异性增强双层（CSMAE双层），具有a）。增强所得磁阻元件的晶体结构质量，从而提高其制造成品率; 和b）。增强记录层的磁各向异性，从而实现磁阻元件的高MR比，同时减少不期望的旋转泵送效应。当磁阻膜被热退火时，随着硼元素迁移到杂质吸收层，发生结晶过程以形成具有（100）平面平行于隧道势垒层表面的外延生长的bcc CoFe晶粒。通过溅射蚀刻或RIE蚀刻工艺除去杂质吸收层的顶部部分，然后进行任选的氧化工艺，杂质吸收层的薄而热稳定的部分以低阻尼常数形成在磁阻元件的顶部上。因此，对于自旋转移扭矩MRAM应用可以实现减小的写入电流。

17. 发明授权

US09577518B2 Voltage control method and apparatus for achieving and maintaining a targeted voltage on a load 有权
标题翻译：用于实现和维持负载上的目标电压的电压控制方法和装置
公开(公告)号：US09577518B2
公开(公告)日：2017-02-21
申请号：US14459506
申请日：2014-08-14
申请人： Alpha and Omega Semiconductor (Cayman), Ltd
发明人： Kong Soon Ng , Wei-Chi Huang , Jean-Shin Wu
IPC分类号： H02M3/156 , H02M3/158
CPC分类号： H02M3/156 , H02M3/1588
摘要： The present invention discloses a voltage control method. First, the load voltage of the load is divided to generate a feedback voltage. Then, an absolute value of a periodic triangular wave signal is retrieved to generate a positive feedback signal, which and the feedback voltage are then combined to produce a sum signal. The sum signal is then compared with a target voltage and when the sum signal is less than the target voltage, a control signal is generated and thus the load voltage is updated and stabilized using an input voltage. In an alternative method, the feedback voltage and the periodic triangular wave signal are combined to generate a sum signal, which is compared with the target voltage. When sum signal is less than the target voltage, a control signal is generated and thus the load voltage is for updated and stabilized using an input voltage.
摘要翻译：本发明公开了一种电压控制方法。首先，将负载的负载电压分压以产生反馈电压。然后，检索周期性三角波信号的绝对值以产生正反馈信号，然后将该反馈信号和反馈电压组合以产生和信号。然后将和信号与目标电压进行比较，并且当和信号小于目标电压时，产生控制信号，因此使用输入电压更新和稳定负载电压。在替代方法中，反馈电压和周期性三角波信号被组合以产生和目标电压进行比较的和信号。当和信号小于目标电压时，产生控制信号，因此使用输入电压对负载电压进行更新和稳定。

18. 发明授权

US09437811B2 Method for making a magnetic random access memory element with small dimension and high quality 有权
标题翻译：制造具有小尺寸和高质量的磁性随机存取存储元件的方法
公开(公告)号：US09437811B2
公开(公告)日：2016-09-06
申请号：US14562660
申请日：2014-12-05
申请人： Rongfu Xiao
发明人： Rongfu Xiao
IPC分类号： H01L43/12 , G11B5/33 , H01L43/02 , H01L43/08
CPC分类号： H01L43/12 , H01L43/02 , H01L43/08 , H01L43/10
摘要： This invention is about a method to make an MRAM element with small dimension, by building an MTJ as close as possible to an associated via connecting an associated circuitry in a semiconductor wafer. The invention provides a process scheme to flatten the interface of bottom electrode during film deposition, which ensures a good deposition of atomically smooth MTJ multilayer as close as possible to an associated via which otherwise might be atomically rough. The flattening scheme is first to deposit a thin amorphous conducting layer in the middle of BE deposition and immediately to bombard the amorphous layer by low energy ions to provide kinetic energy for surface atom diffusion to move from high point to low kinks. With such surface flattening scheme, not only the MRAM element can be made extremely small, but its device performance and magnetic stability can also be greatly improved.
摘要翻译：本发明涉及一种制造具有小尺寸的MRAM元件的方法，通过构建尽可能靠近连接半导体晶片中的相关电路的相关联的通孔的MTJ。本发明提供了一种在膜沉积期间使底部电极的界面平坦化的工艺方案，其确保了原子光滑的MTJ多层的尽可能接近的可能原子粗糙的相关通孔的良好沉积。平坦化方案首先在BE沉积的中间沉积薄的非晶导电层，并立即通过低能离子轰击非晶层，以提供动能，使表面原子扩散从高点移动到低扭结。通过这种表面平坦化方案，不仅可以使MRAM元件非常小，而且可以大大提高其器件性能和磁稳定性。

19. 发明授权

US09287323B2 Perpendicular magnetoresistive elements 有权
标题翻译：垂直磁阻元件
公开(公告)号：US09287323B2
公开(公告)日：2016-03-15
申请号：US14149757
申请日：2014-01-07
申请人： Yimin Guo
发明人： Yimin Guo
IPC分类号： H01L27/22 , G11C11/02 , G11C11/16 , H01L43/08 , H01L43/10
CPC分类号： H01L27/224 , G11C11/02 , G11C11/161 , H01L27/22 , H01L27/222 , H01L43/08 , H01L43/10
摘要： A perpendicular magnetoresistive element comprises anovel buffer layer provided on a surface of the recording layer, which is opposite to a surface of the recording layer where the tunnel barrier layer is provided, wherein at least the portion of the buffer layer interfacing to the recording layer contains a rocksalt crystal structure having the (100) plane parallel to the substrate plane and at least a portion of the buffer layer comprises a doped element having conductivity enhancement and the perpendicular resistance of the buffer layer is relatively small than that of the tunnel barrier layer. The invention preferably includes materials, configurations and processes of perpendicular magnetoresistive elements suitable for perpendicular spin-transfer torque MRAM applications.
摘要翻译：垂直磁阻元件包括设置在记录层的与设置有隧道势垒层的记录层的表面相对的表面上的缓冲层，其中至少与记录层相接的缓冲层的部分包含具有（100）平面平行于衬底平面的岩盐晶体结构，并且缓冲层的至少一部分包括具有导电性增强的掺杂元素，并且缓冲层的垂直电阻相对于隧道势垒层的垂直电阻小。本发明优选地包括适用于垂直旋转传递转矩MRAM应用的垂直磁阻元件的材料，配置和工艺。

20. 发明授权

US11129519B2 Single-use endoscope with built-in optical fibers and fixtures 有权
公开(公告)号：US11129519B2
公开(公告)日：2021-09-28
申请号：US15884344
申请日：2018-01-30
申请人： OTU Medical Inc.
发明人： XiBo Wei , GePing Liu , XiYi Wei
IPC分类号： A61B1/00 , A61B1/313 , A61N5/06
摘要： This present invention proposes new methods of designing single-use endoscopes with built-in optical fibers and operating fixtures. As compared to conventional endoscopes, a separate lumen is reserved for integrating a laser fiber along the insertion tube of the proposed endoscope, and an optical fiber placement device (OFPD) is correspondingly added in the endoscope handle for controlling the movement of the laser fiber. By sliding the slider or dialing the wheel of OFPD, a surgeon can conveniently control movement of the laser fiber. By pressing a retractable control stick in the OFPD, the surgeon can either push the laser fiber out from the endoscope's distal-end or pull back the laser fiber, further unlocking or locking the power switch of the laser fiber to avoid mis-operations. All these above operations can be performed by the surgeon's one-hand, including the routine deflections and rotations of the endoscope. Four implementations of the OFPD are introduced in this invention. In addition, an ultra-small optical fiber based pressure sensor can be added at the distal end of the endoscope upon applications.

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