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    • 13. 发明授权
    • Integrated MEMS 3D multi-sensor
    • 集成MEMS三维多传感器
    • US07784344B2
    • 2010-08-31
    • US11947603
    • 2007-11-29
    • Ioan PavelescuIon GeorgescuDana Elena GuranCornel P. Cobianu
    • Ioan PavelescuIon GeorgescuDana Elena GuranCornel P. Cobianu
    • G01P15/125G01P15/08
    • G01P15/125G01D21/02G01P15/18G01P2015/082
    • Apparatus, methods, and systems for sensing acceleration and magnetic fields in all three axes from a first capacitive bridge sensor having a first proof mass; and a second capacitive bridge sensor having a second proof mass located within the first proof mass. The second proof mass is coupled to the first proof mass by springs that permit movement in the second axis. Sensing of the remaining axis of interest may be done by a third and fourth capacitive bridge configured similar to that of the first and second capacitive bridge sensors. The third and fourth capacitive bridge sensors may be oriented 90 degrees off of the first and second capacitive bridge. An alternative is to locate a third capacitive bridge within the second proof mass.
    • 用于感测来自具有第一检测质量的第一电容桥式传感器的所有三个轴上的加速度和磁场的装置,方法和系统; 以及第二电容桥式传感器,其具有位于所述第一检验质量块内的第二检验质量块。 第二检测质量体通过允许在第二轴线上移动的弹簧联接到第一检验质量块。 感兴趣的剩余轴可以通过配置成类似于第一和第二电容桥式传感器的第三和第四电容性桥接来实现。 第三和第四电容桥式传感器可以取向于第一和第二电容桥90度。 另一种选择是在第二个检测质量块内定位第三个电容桥。
    • 15. 发明申请
    • INTEGRATED MEMS 3D MULTI-SENSOR
    • 集成MEMS 3D多传感器
    • US20090139330A1
    • 2009-06-04
    • US11947603
    • 2007-11-29
    • Ioan PavelescuIon GeorgescuDana Elena GuranCornel P. Cobianu
    • Ioan PavelescuIon GeorgescuDana Elena GuranCornel P. Cobianu
    • G01P15/125
    • G01P15/125G01D21/02G01P15/18G01P2015/082
    • Apparatus, methods, and systems for sensing acceleration and magnetic fields in all three axes from a first capacitive bridge sensor having a first proof mass; and a second capacitive bridge sensor having a second proof mass located within the first proof mass. The second proof mass is coupled to the first proof mass by springs that permit movement in the second axis. The of sense the remaining axis of interest may be done by a third and fourth capacitive bridge configured similar to that of the first and second capacitive bridge sensors. The third and fourth capacitive bridge sensors may be oriented 90 degrees off of the first and second capacitive bridge. An alternative is to locate a third capacitive bridge within the second proof mass.
    • 用于感测来自具有第一检测质量的第一电容桥式传感器的所有三个轴上的加速度和磁场的装置,方法和系统; 以及第二电容桥式传感器,其具有位于所述第一检验质量块内的第二检验质量块。 第二检测质量体通过允许在第二轴线上移动的弹簧联接到第一检验质量块。 感测的剩余轴可以由配置为类似于第一和第二电容桥式传感器的第三和第四电容性桥接来实现。 第三和第四电容桥式传感器可以取向于第一和第二电容桥90度。 另一种选择是在第二个检测质量块内定位第三个电容桥。
    • 16. 发明授权
    • Micro-machined pressure sensor with polymer diaphragm
    • 具有聚合物隔膜的微加工压力传感器
    • US07401525B2
    • 2008-07-22
    • US10907176
    • 2005-03-23
    • Cornel P. CobianuMihai GologanuIoan PavelescuBogdan Catalin Serban
    • Cornel P. CobianuMihai GologanuIoan PavelescuBogdan Catalin Serban
    • G01L9/00H01L51/40
    • G01L1/18G01L1/2287G01L9/0052
    • A piezoresistive pressure and/or strain sensor micro-machined primarily from plastic and/or glass. In one illustrative embodiment, the piezoresistive pressure sensor is formed on a polymer substrate. A first selectively implanted region is provided in the polymer substrate to create a piezoresistive region in the polymer substrate. A second selectively implanted region is then provided in at least part of the first selectively implanted region to modulate the electrical conductivity of the first selectively implanted region. The illustrative sensor may be selectively implanted with, for example, nitrogen to create the piezoresistive region, and boron to modulate the electrical conductivity of the piezoresistive region. Phosphorus or any other suitable material may also be used to modulate the electrical conductivity of the piezoresistive region, as desired. The piezoresistive pressure/strain sensor may be formed from a single substrate, or two or more substrates, and the resulting pressure/strain sensor may be mounted in a plastic package, if desired.
    • 主要由塑料和/或玻璃微加工的压阻压力和/或应变传感器。 在一个说明性实施例中,压阻式压力传感器形成在聚合物基板上。 在聚合物衬底中提供第一选择性注入区域,以在聚合物衬底中产生压阻区域。 然后在第一选择性注入区域的至少一部分中提供第二选择注入区域,以调制第一选择性注入区域的电导率。 说明性传感器可以选择性地植入例如氮气以产生压阻区域和硼以调节压阻区域的导电性。 根据需要,磷或任何其它合适的材料也可用于调节压阻区域的导电性。 压阻压力/应变传感器可以由单个基板或两个或更多个基板形成,并且如果需要,所得到的压力/应变传感器可以安装在塑料封装中。