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11. 发明授权

US09698754B2 Capacitive coupled resonator and filter device with comb electrodes and support frame separation from piezoelectric layer 有权
公开(公告)号：US09698754B2
公开(公告)日：2017-07-04
申请号：US14954251
申请日：2015-11-30
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak
IPC分类号： H03H9/02 , H01L41/047 , H01L41/053 , H03H9/17
CPC分类号： H03H9/02228 , H01L41/047 , H01L41/053 , H03H9/173 , H03H9/175
摘要： A capacitive coupled resonator device includes a substrate, a bottom electrode, a piezoelectric layer, a top electrode, and at least one support frame positioned between the piezoelectric layer and the top electrode and/or positioned between the piezoelectric layer and the bottom electrode. The top electrode includes a first top comb electrode having a first top bus bar and first top fingers extending in a first direction from the first top bus bar, and a second top comb electrode having a second top bus bar and second top fingers extending in a second direction from the second top bus bar, the second direction being substantially opposite to the first direction such that the first and second top fingers form a top interleaving pattern. The at least one support frame includes air-gaps separating at least one of the top electrode and the bottom electrode from the piezoelectric layer, respectively.

12. 发明授权

US09691963B2 Capacitive coupled resonator and filter device with comb electrodes and support pillars separating piezoelectric layer 有权
公开(公告)号：US09691963B2
公开(公告)日：2017-06-27
申请号：US14954269
申请日：2015-11-30
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak
IPC分类号： H03H9/02 , H01L41/047 , H01L41/053 , H03H9/17
CPC分类号： H01L41/047 , H01L41/053 , H03H9/02228 , H03H9/173 , H03H9/175
摘要： A capacitive coupled resonator device includes a substrate, a bottom electrode, a piezoelectric layer, a top electrode, and at least one set of support pillars positioned between the piezoelectric layer and the top electrode and/or between the piezoelectric layer and the bottom electrode. The top electrode includes a first top comb electrode having a first top bus bar and first top fingers extending in a first direction from the first top bus bar, and a second top comb electrode having a second top bus bar and second top fingers extending in a second direction from the second top bus bar, the second direction being substantially opposite the first direction such that the first and second top fingers form a top interleaving pattern. The at least one set of support pillars separates at least one of the top and bottom electrodes from the piezoelectric layer, respectively, thereby defining corresponding air-gaps.

13. 发明授权

US09590165B2 Acoustic resonator comprising aluminum scandium nitride and temperature compensation feature 有权
标题翻译：包含铝钪和温度补偿特性的声谐振器
公开(公告)号：US09590165B2
公开(公告)日：2017-03-07
申请号：US14194074
申请日：2014-02-28
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Qiang Zou , Chris Feng , Phil Nikkel , Kevin J. Grannen , Tangshiun Yeh , Dariusz Burak , John Choy , Tina L. Lamers
IPC分类号： H01L41/09 , H01L41/187 , H01L41/047 , H01L41/08 , H03H9/17 , H03H9/02 , H03H9/13
CPC分类号： H01L41/0805 , H03H9/02102 , H03H9/131 , H03H9/173
摘要： An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode and comprising aluminum scandium nitride, a second electrode disposed on the piezoelectric layer, and a temperature compensation feature having a temperature coefficient offsetting at least a portion of a temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode.
摘要翻译：声谐振器结构包括设置在基板上的第一电极，设置在第一电极上并包括铝钪的压电层，设置在压电层上的第二电极，以及温度补偿特征，其温度系数至少抵消部分压电层，第一电极和第二电极的温度系数。

14. 发明授权

US09401691B2 Acoustic resonator device with air-ring and temperature compensating layer 有权
标题翻译：具有空气环和温度补偿层的声谐振器装置
公开(公告)号：US09401691B2
公开(公告)日：2016-07-26
申请号：US14266445
申请日：2014-04-30
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Qiang Zou , Chris Feng , Phil Nikkel , John Choy , Alexandre Augusto Shirakawa , Tina L. Lamers , Sook Ching Chang , Dariusz Burak
IPC分类号： H03H9/02 , H03H3/013 , H03H9/17 , H03H9/13
CPC分类号： H03H9/02102 , H03H3/013 , H03H9/02086 , H03H9/132 , H03H9/173
摘要： A bulk acoustic wave (BAW) resonator device includes a substrate defining a cavity, a bottom electrode formed over the substrate and at least a portion of the cavity, a piezoelectric layer formed on the bottom electrode, and a top electrode formed on the piezoelectric layer. An air-wing and an air-bridge are formed between the piezoelectric layer and the top electrode, the air-wing having an inner edge that defines an outer boundary of an active region of the BAW resonator device. The BAW resonator device further includes a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. The temperature compensation feature extends outside the active region by a predetermined length.
摘要翻译：体声波（BAW）谐振器装置包括限定空腔的基板，形成在基板上的底部电极和空腔的至少一部分，形成在底部电极上的压电层，以及形成在压电层上的顶部电极。在压电层和顶部电极之间形成空气翼和空气桥，空气翼具有限定BAW谐振器装置的有源区域的外边界的内边缘。 BAW谐振器装置还包括具有用于抵消压电层的负温度系数的至少一部分的正温度系数的温度补偿特征。温度补偿功能在有效区域外延伸预定长度。

15. 发明申请

US20150349747A1 CAPACITIVE COUPLED RESONATOR DEVICE WITH AIR-GAP SEPARATING ELECTRODE AND PIEZOELECTRIC LAYER 有权
标题翻译：具有气隙分离电极和压电层的电容耦合谐振器装置
公开(公告)号：US20150349747A1
公开(公告)日：2015-12-03
申请号：US14290777
申请日：2014-05-29
申请人： Avago Technologies General IP ( Singapore) Pte. Ltd.
发明人： Dariusz Burak , Phil Nikkel
IPC分类号： H03H9/54
CPC分类号： H03H9/54 , H03H9/02118 , H03H9/02157 , H03H9/13 , H03H9/173 , H03H9/177
摘要： A bulk acoustic wave (BAW) resonator includes a bottom electrode disposed on a substrate, a piezoelectric layer disposed over the bottom electrode, and a top electrode disposed over the piezoelectric layer. The BAW resonator further includes at least one air-gap and corresponding support structure, where the at least one air-gap separates at least one of the bottom electrode and the top electrode from the piezoelectric layer, respectively.
摘要翻译：体声波（BAW）谐振器包括设置在基板上的底部电极，设置在底部电极上的压电层和设置在压电层上的顶部电极。 BAW谐振器还包括至少一个气隙和相应的支撑结构，其中至少一个气隙分别将底部电极和顶部电极中的至少一个与压电层分离。

16. 发明申请

US20140232486A1 ACOUSTIC RESONATOR COMPRISING ACOUSTIC REFLECTOR, FRAME AND COLLAR 有权
标题翻译：包含声学反射器，框架和COLLAR的声学谐振器
公开(公告)号：US20140232486A1
公开(公告)日：2014-08-21
申请号：US14180596
申请日：2014-02-14
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak
IPC分类号： H03H9/54
CPC分类号： H03H9/02118 , H03H9/02102 , H03H9/132 , H03H9/171 , H03H9/175 , H03H9/54
摘要： A solidly mounted resonator (SMR) device includes an acoustic reflector having stacked acoustic reflector layer pairs, each of which includes a low acoustic impedance layer formed of low acoustic impedance material stacked on a high acoustic impedance layer formed of high acoustic impedance material. The SMR device further includes a bottom electrode disposed on the acoustic reflector, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer. A collar is formed outside a main active region defined by an overlap between the top electrode, the piezoelectric layer and the bottom electrode, and at least one frame is disposed within the main active region. The collar has an inner edge substantially aligned with a boundary of or overlapping the main active region, and the at least one frame has an outer edge substantially aligned with the boundary of the main active region.
摘要翻译：固体安装的谐振器（SMR）装置包括具有堆叠的声反射器层对的声反射器，每个声反射器层包括由低声阻抗材料形成的低声阻抗层，该低声阻抗层堆叠在由高声阻抗材料形成的高声阻抗层上。 SMR器件还包括设置在声反射器上的底电极，设置在底电极上的压电层和设置在压电层上的顶电极。在由主电极，压电层和底电极之间的重叠限定的主有效区域的外侧形成有一个环，并且至少一个框架设置在主有效区域内。套环具有基本上与主活动区域的边界或重叠的内边缘，并且至少一个框架具有基本上与主活动区域的边界对准的外边缘。

17. 发明申请

US20140152152A1 ACOUSTIC RESONATOR COMPRISING TEMPERATURE COMPENSATING LAYER AND PERIMETER DISTRIBUTED BRAGG REFLECTOR 有权
标题翻译：包含温度补偿层和周边分布式BRAGG反射器的声学谐振器
公开(公告)号：US20140152152A1
公开(公告)日：2014-06-05
申请号：US14092026
申请日：2013-11-27
申请人： AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
发明人： Dariusz Burak , John Choy , Kevin J. Grannen , Phil Nikkel
IPC分类号： H03H9/17
CPC分类号： H03H9/02102 , H03H9/173 , H03H9/175 , H03H9/585
摘要： An acoustic resonator structure includes a bottom electrode disposed on a substrate, a piezoelectric layer disposed on the bottom electrode, a top electrode disposed on the piezoelectric layer, a cavity disposed beneath the bottom electrode, and a temperature compensating feature. The temperature compensating feature has a positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric and electrode layers. The acoustic resonator structure further includes an acoustic reflector disposed over the substrate around a perimeter of the cavity. The acoustic reflector includes a layer of low acoustic impedance material stacked on a layer of high acoustic impedance material.
摘要翻译：声谐振器结构包括设置在基板上的底部电极，设置在底部电极上的压电层，设置在压电层上的顶部电极，设置在底部电极下方的空腔和温度补偿特征。温度补偿特征具有用于抵消压电层和电极层的负温度系数的至少一部分的正温度系数。声谐振器结构还包括设置在围绕空腔的周边的衬底上的声反射器。声反射器包括层叠在高声阻抗材料层上的低声阻抗材料层。

18. 发明申请

US20140118088A1 ACCOUSTIC RESONATOR HAVING COMPOSITE ELECTRODES WITH INTEGRATED LATERAL FEATURES 有权
标题翻译：具有集成的横向特征的复合电极的共振谐振器
公开(公告)号：US20140118088A1
公开(公告)日：2014-05-01
申请号：US13660941
申请日：2012-10-25
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , Phil Nikkel , Chris Feng , John Choy
IPC分类号： H03H9/54
CPC分类号： H03H9/02118 , H03H9/131 , H03H9/173 , H03H9/175
摘要： A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic reflector, a piezoelectric layer on the bottom electrode, and a top electrode on the piezoelectric layer. At one of the bottom electrode and the top electrode is a composite electrode having an integrated lateral feature, arranged between planar top and bottom surfaces of the composite electrode and configured to create a cut-off frequency mismatch.
摘要翻译：体声波（BAW）谐振器装置包括在空腔和声反射器之一上的衬底上的底电极，底电极上的压电层和压电层上的顶电极。在底部电极和顶部电极中的一个是具有集成的横向特征的复合电极，其布置在复合电极的平面顶部和底部表面之间，并且被配置为产生截止频率失配。

19. 发明授权

US09634642B2 Acoustic resonator comprising vertically extended acoustic cavity 有权
公开(公告)号：US09634642B2
公开(公告)日：2017-04-25
申请号：US14292043
申请日：2014-05-30
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , Stefan Bader
IPC分类号： H01L41/047 , H03H9/17 , H01L41/107 , H03H9/13
CPC分类号： H03H9/17 , H01L41/047 , H01L41/107 , H03H9/131 , H03H9/132 , H03H9/174 , H03H9/175
摘要： A bulk acoustic wave (BAW) resonator having a vertically extended acoustic cavity is provided. The BAW resonator includes a bottom electrode disposed on a substrate over a cavity formed in the substrate; a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer. The piezoelectric layer has a thickness of approximately λ/2, wherein λ is a wavelength corresponding to a thickness extensional resonance frequency of the BAW resonator. At least one of the bottom electrode and the top electrode comprises a composite electrode having a thickness of approximately λ/2.

20. 发明申请

US20170063339A1 SURFACE ACOUSTIC WAVE (SAW) RESONATOR 审中-公开
公开(公告)号：US20170063339A1
公开(公告)日：2017-03-02
申请号：US15143526
申请日：2016-04-30
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , Suresh Sridaran , Stephen Roy Gilbert , Richard C. Ruby
IPC分类号： H03H9/64 , H03H9/02 , H03H9/15
CPC分类号： H03H9/02574 , H03H9/02559 , H03H9/02614 , H03H9/02866 , H03H9/6483 , H03H9/6496
摘要： A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

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