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1. 发明授权

US10284173B2 Acoustic resonator device with at least one air-ring and frame 有权
公开(公告)号：US10284173B2
公开(公告)日：2019-05-07
申请号：US15196657
申请日：2016-06-29
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , Phil Nikkel , David Martin , John Choy
IPC分类号： H01L41/08 , H03H9/17 , H03H9/13 , H03H9/02
摘要： An acoustic resonator device includes a bottom electrode disposed on a substrate over an air cavity, a piezoelectric layer disposed on the bottom electrode, and a top electrode disposed on the piezoelectric layer, where an overlap between the top electrode, the piezoelectric layer and the bottom electrode over the air cavity defines a main membrane region. The acoustic resonator device further includes at least one metal frame disposed on a bottom surface of the bottom electrode having a thickness that ranges from about 10% to about 75% of a thickness of the bottom electrode in a central region of the bottom electrode. The thickness of the metal frame improves heat dissipation out of the acoustic resonator device while also improving structural stability of the acoustic resonator device without detrimentally affecting its performance.

2. 发明授权

US09608594B2 Capacitive coupled resonator device with air-gap separating electrode and piezoelectric layer 有权
公开(公告)号：US09608594B2
公开(公告)日：2017-03-28
申请号：US14290777
申请日：2014-05-29
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , Phil Nikkel
IPC分类号： H03H9/54 , H03H9/02 , H03H9/17 , H03H9/13
CPC分类号： H03H9/54 , H03H9/02118 , H03H9/02157 , H03H9/13 , H03H9/173 , H03H9/177
摘要： A bulk acoustic wave (BAW) resonator includes a bottom electrode disposed on a substrate, a piezoelectric layer disposed over the bottom electrode, and a top electrode disposed over the piezoelectric layer. The BAW resonator further includes at least one air-gap and corresponding support structure, where the at least one air-gap separates at least one of the bottom electrode and the top electrode from the piezoelectric layer, respectively.

3. 发明申请

US20170047907A1 ACOUSTIC RESONATOR DEVICE WITH AN ELECTRICALLY-ISOLATED LAYER OF HIGH-ACOUSTIC-IMPEDANCE MATERIAL INTERPOSED THEREIN 审中-公开
标题翻译：具有高阻抗材料间隔电隔离层的声学谐振器装置
公开(公告)号：US20170047907A1
公开(公告)日：2017-02-16
申请号：US15335395
申请日：2016-10-26
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak , Stefan Bader , Kevin J. Grannen
IPC分类号： H03H9/17
CPC分类号： H03H9/171 , H03H9/132 , H03H9/585 , H03H9/587
摘要： An acoustic resonator device includes a bottom electrode disposed on a substrate over an air cavity, a first piezoelectric material layer disposed on the bottom electrode, an electrically-isolated layer of high-acoustic-impedance material disposed on the first piezoelectric material layer, a second piezoelectric material layer disposed on the electrically-isolated layer of high-acoustic impedance material, and a top electrode disposed on the second piezoelectric material layer, where an overlap among the top electrode, the first piezoelectric material layer, the electrically-isolated layer of high-acoustic-impedance material, the second piezoelectric material layer, and the bottom electrode over the air cavity defines a main membrane region.
摘要翻译：声谐振器装置包括设置在空气腔上的基板上的底部电极，设置在底部电极上的第一压电材料层，设置在第一压电材料层上的高声阻抗材料的电隔离层，第二压电材料层设置在高声阻抗材料的电隔离层上的压电材料层和设置在第二压电材料层上的顶电极，其中顶电极，第一压电材料层，电隔离层高声阻抗材料，第二压电材料层和空气腔上的底部电极限定主膜区域。

4. 发明申请

US20160126930A1 BULK ACOUSTIC WAVE RESONATOR COMPRISING A RING 有权
标题翻译：包括环的大容量声波谐波器
公开(公告)号：US20160126930A1
公开(公告)日：2016-05-05
申请号：US14526466
申请日：2014-10-28
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Qiang Zou , Dariusz Burak
IPC分类号： H03H9/56 , H01L41/047
CPC分类号： H01L41/047 , H01L41/0533 , H03H3/04 , H03H9/02118 , H03H9/132 , H03H9/15 , H03H9/173 , H03H9/175
摘要： An acoustic resonator includes a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer; a passivation layer disposed over the second electrode and a ring disposed between the substrate and the passivation layer
摘要翻译：声谐振器包括设置在基板上的第一电极; 设置在所述第一电极上的压电层; 以及设置在所述压电层上的第二电极; 设置在所述第二电极上的钝化层和设置在所述基板和所述钝化层之间的环

5. 发明申请

US20160118957A1 BULK ACOUSTIC RESONATOR DEVICE INCLUDING TEMPERATURE COMPENSATION STRUCTURE COMPRISING LOW ACOUSTIC IMPEDANCE LAYER 有权
标题翻译：包括包含低声阻抗层的温度补偿结构的大容量声学谐振器装置
公开(公告)号：US20160118957A1
公开(公告)日：2016-04-28
申请号：US14521406
申请日：2014-10-22
申请人： Avago Technologies General IP (Singapore) Pte. Ltd .
发明人： Dariusz Burak , Qiang Zou , Genichi Tsuzuki
IPC分类号： H03H9/54 , H01L41/047
CPC分类号： H03H9/02102 , H01L41/0471 , H03H3/0076 , H03H9/173 , H03H9/175 , H03H2003/0407
摘要： An acoustic resonator device includes a temperature compensation structure disposed beneath the first electrode and above the substrate.
摘要翻译：声谐振器装置包括设置在第一电极下方和基板上方的温度补偿结构。

6. 发明申请

US20160079958A1 ACOUSTIC RESONATOR COMPRISING VERTICALLY EXTENDED ACOUSTIC CAVITY 审中-公开
标题翻译：包含垂直延伸声孔的声学谐振器
公开(公告)号：US20160079958A1
公开(公告)日：2016-03-17
申请号：US14953545
申请日：2015-11-30
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Dariusz Burak
IPC分类号： H03H9/54
CPC分类号： H03H9/131 , H03H9/132 , H03H9/174 , H03H9/175
摘要： An acoustic resonator device includes a substrate, a bottom electrode, a piezoelectric layer, and a top electrode. The top electrode includes a first top comb electrode having a first top bus bar and first top fingers extending in a first direction from the first top bus bar, and a second top comb electrode having a second top bus bar and second top fingers extending in a second direction from the second top bus bar, substantially opposite to the first direction, such that the first and second top fingers form a top interleaving pattern. One of the bottom and top electrodes is a composite electrode having a thickness of approximately λ/2, where λ is a wavelength corresponding to thickness extensional resonance frequency of the acoustic resonator. The piezoelectric layer and one of the bottom the electrodes that is not the composite electrode have a combined thickness of approximately λ/2.
摘要翻译：声谐振器装置包括基板，底部电极，压电层和顶部电极。顶部电极包括第一顶部梳状电极，其具有第一顶部汇流条和从第一顶部汇流条沿第一方向延伸的第一顶部指状物，以及第二顶部梳状电极，其具有第二顶部汇流条和第二顶部指状物第二方向从第二顶部汇流条基本上与第一方向相反，使得第一和第二顶部指状物形成顶部交织图案。底部和顶部电极之一是具有大约λ/ 2的厚度的复合电极，其中λ是对应于声谐振器的厚度延伸共振频率的波长。不是复合电极的压电层和电极底部之一具有大约λ/ 2的组合厚度。

7. 发明申请

US20140175950A1 ACOUSTIC RESONATOR COMPRISING ALUMINUM SCANDIUM NITRIDE AND TEMPERATURE COMPENSATION FEATURE 有权
标题翻译：包含氮化钠和温度补偿特性的声学谐振器
公开(公告)号：US20140175950A1
公开(公告)日：2014-06-26
申请号：US14194074
申请日：2014-02-28
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Qiang Zou , Chris Feng , Phil Nikkel , Kevin J. Grannen , Tangshiun Yeh , Dariusz Burak , John Choy , Tina L. Lamers
IPC分类号： H01L41/08
CPC分类号： H01L41/0805 , H03H9/02102 , H03H9/131 , H03H9/173
摘要： An acoustic resonator structure comprises a first electrode disposed on a substrate, a piezoelectric layer disposed on the first electrode and comprising aluminum scandium nitride, a second electrode disposed on the piezoelectric layer, and a temperature compensation feature having a temperature coefficient offsetting at least a portion of a temperature coefficient of the piezoelectric layer, the first electrode, and the second electrode.
摘要翻译：声谐振器结构包括设置在基板上的第一电极，设置在第一电极上并包括铝钪的压电层，设置在压电层上的第二电极，以及温度补偿特征，其温度系数至少抵消部分压电层，第一电极和第二电极的温度系数。

8. 发明申请

US20140118092A1 ACCOUSTIC RESONATOR HAVING INTEGRATED LATERAL FEATURE AND TEMPERATURE COMPENSATION FEATURE 有权
标题翻译：具有一体化横向特征和温度补偿特性的共振谐振器
公开(公告)号：US20140118092A1
公开(公告)日：2014-05-01
申请号：US13766993
申请日：2013-02-14
申请人： AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
发明人： Dariusz Burak , John Choy , Phil Nikkel , Kevin J. Grannen
IPC分类号： H03H9/54
CPC分类号： H03H9/02086 , H03H9/02102 , H03H9/131 , H03H9/132 , H03H9/173 , H03H9/175
摘要： A bulk acoustic wave (BAW) resonator device includes a bottom electrode on a substrate over one of a cavity and an acoustic mirror, a piezoelectric layer on the bottom electrode, a top electrode on the piezoelectric layer, and a temperature compensation feature having positive temperature coefficient for offsetting at least a portion of a negative temperature coefficient of the piezoelectric layer. At least one of the bottom electrode and the top electrode includes an integrated lateral feature configured to create at least one of a cut-off frequency mismatch and an acoustic impedance mismatch.
摘要翻译：体声波（BAW）谐振器装置包括在空腔和声反射镜之一上的衬底上的底部电极，底部电极上的压电层，压电层上的顶部电极和具有正温度的温度补偿特征用于抵消压电层的负温度系数的至少一部分的系数。底部电极和顶部电极中的至少一个包括被构造为产生截止频率失配和声阻抗失配中的至少一个的集成横向特征。

9. 发明授权

US09991871B2 Bulk acoustic wave resonator comprising a ring 有权
公开(公告)号：US09991871B2
公开(公告)日：2018-06-05
申请号：US14526466
申请日：2014-10-28
申请人： Avago Technologies General IP (Singapore) Pte. Ltd.
发明人： Qiang Zou , Dariusz Burak
IPC分类号： H03H9/13 , H03H9/15 , H01L41/047 , H01L41/053 , H03H3/04 , H03H9/17 , H03H9/02
CPC分类号： H01L41/047 , H01L41/0533 , H03H3/04 , H03H9/02118 , H03H9/132 , H03H9/15 , H03H9/173 , H03H9/175
摘要： An acoustic resonator includes a first electrode disposed over a substrate; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer; a passivation layer disposed over the second electrode; and a ring disposed between the substrate and the passivation layer.

10. 发明申请

US20170288121A1 ACOUSTIC RESONATOR INCLUDING COMPOSITE POLARITY PIEZOELECTRIC LAYER HAVING OPPOSITE POLARITIES 审中-公开
公开(公告)号：US20170288121A1
公开(公告)日：2017-10-05
申请号：US15253527
申请日：2016-08-31
申请人： Avago Technologies General IP (Singapore) Pte. Ltd
发明人： Dariusz Burak , Kevin J. Grannen
IPC分类号： H01L41/047 , H01L41/107
CPC分类号： H03H9/173 , H03H3/02 , H03H9/02015 , H03H9/02102 , H03H9/02118
摘要： A bulk acoustic wave (BAW) resonator device includes a bottom electrode disposed over a substrate and an acoustic reflector, a seed layer formed of a dielectric material disposed over the bottom electrode, a split piezoelectric layer disposed on the seed layer, and a top electrode disposed over the split piezoelectric layer. The split piezoelectric layer includes a first portion having a positive polarity due to the seed layer, a second portion having a negative polarity that is substantially opposite to the positive polarity of the first portion, and a metal interposer between the first portion and the second portion. The first portion of the piezoelectric layer has a first thickness and the second portion of the piezoelectric layer has a second thickness that is not equal to the first thickness, thereby lowering a coupling coefficient kt2 of the BAW resonator device.

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