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11. 发明授权

US11467500B2 Optical arrangement and method for repairing the optical arrangement after a shock load 有权
公开(公告)号：US11467500B2
公开(公告)日：2022-10-11
申请号：US16814169
申请日：2020-03-10
申请人： Carl Zeiss SMT GmbH
发明人： Joachim Hartjes
IPC分类号： G03F7/20 , G02B5/08 , G02B7/182
摘要： An optical arrangement, in particular to a lithography system, includes: a first component, in particular a carrying frame; a second component which is movable relative to the first component, in particular a mirror or a housing; and at least one stop having at least one stop face for limiting the movement of the second component in relation to the first component. The stop includes a metal foam for absorbing the kinetic energy of the second component when it strikes against the stop face. A method for repairing an optical arrangement of this kind after a shock load includes replacing at least one stop, in which the metal foam was compressed under the shock load, with a stop in which the metal foam is not compressed.

12. 发明申请

US20220308457A1 PROJECTION EXPOSURE APPARATUS HAVING A DEVICE FOR DETERMINING THE CONCENTRATION OF ATOMIC HYDROGEN 有权
公开(公告)号：US20220308457A1
公开(公告)日：2022-09-29
申请号：US17702218
申请日：2022-03-23
申请人： Carl Zeiss SMT GmbH
发明人： Dirk EHM , Moritz BECKER
IPC分类号： G03F7/20 , G01N33/00
摘要： A projection exposure apparatus (1) for semiconductor lithography, has a device for determining the concentration of atomic hydrogen in a plasma (29) in the region of an optical element (25, 25.1), wherein the device includes a sensor (32, 32.1, 32.2, 32.3, 32.4), In this case, the device includes a filter element (31, 31.1,31.2, 31.3, 31.4) arranged between the region of the plasma (29) and the sensor (32, 32.1, 32.2, 32.3, 32.4), wherein the filter element (31, 31.1,31.2, 31.3, 31.4) is configured to predominantly allow the passage of atomic hydrogen from the plasma (29) to the sensor (32, 32.1, 32.2, 32.3, 32.4).

13. 发明申请

US20220308443A1 METHOD, DEVICE AND COMPUTER PROGRAM FOR REPAIRING A MASK DEFECT 有权
公开(公告)号：US20220308443A1
公开(公告)日：2022-09-29
申请号：US17703457
申请日：2022-03-24
申请人： Carl Zeiss SMT GmbH
发明人： Johannes Schöneberg , Michael Budach , Christof Baur , Jens Oster
IPC分类号： G03F1/74
摘要： A method, a device and a computer program for repairing a defect of a mask for lithography, in particular an EUV mask, are described.
A method of repairing a defect of a mask for lithography, in particular an EUV mask, comprises the following steps: (a.) carrying out a first repair step on the defect using a first repair dose, wherein the defect transitions from an initial topology to a first defect topology as a result; (b.) determining an influence of the first repair step on the topology of the defect; (c.) determining a second defect topology for the defect, which is intended to be achieved by way of a second repair step on the defect; and (d.) 1 0 determining a second repair dose for the second repair step, at least in part on the basis of the determined influence of the first repair step on the topology of the defect and the second defect topology. The method may further comprise step (e.) of carrying out the second repair step using the second repair dose.

14. 发明申请

US20220299864A1 METHOD AND APPARATUSES FOR DISPOSING OF EXCESS MATERIAL OF A PHOTOLITHOGRAPHIC MASK 有权
公开(公告)号：US20220299864A1
公开(公告)日：2022-09-22
申请号：US17837454
申请日：2022-06-10
申请人： Carl Zeiss SMT GmbH
发明人： Michael Budach , Christof Baur , Klaus Edinger , Tristan Bret
IPC分类号： G03F1/82 , B08B6/00 , B08B7/02
摘要： The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.

15. 发明申请

US20220299732A1 OPTICAL SYSTEM, HEATING ARRANGEMENT, AND METHOD FOR HEATING AN OPTICAL ELEMENT IN AN OPTICAL SYSTEM 有权
公开(公告)号：US20220299732A1
公开(公告)日：2022-09-22
申请号：US17805757
申请日：2022-06-07
申请人： Carl Zeiss SMT GmbH
发明人： Andrea Berner , Susanne Beder , André Dirauf , Hans-Michael Stiepan , Peter Klopfleisch
IPC分类号： G02B7/18 , G02B17/08 , G02B6/10 , G02B6/26 , H05B3/84 , G03F7/20
摘要： An optical system includes at least one optical element which has an optically effective surface and which is designed for an operating wavelength of less than 30 nm. The optical system also includes a heating arrangement for heating this optical element and comprising a plurality of IR emitters for irradiating the optically effective surface with IR radiation. The IR emitters are activatable and deactivatable independently of each other to variably set different heating profiles in the optical element. The optical system further includes at least one beam shaping unit for shaping the beam of the IR radiation steered onto the optically effective surface by the IR emitters. The optical system also includes a multi-fiber head comprising a multi-fiber connector for connecting optical fibers. IR radiation from a respective one of the IR emitters is suppliable by way of each of these optical fibers.

16. 发明申请

US20220230899A1 CONTACT AREA SIZE DETERMINATION BETWEEN 3D STRUCTURES IN AN INTEGRATED SEMICONDUCTOR SAMPLE 有权
公开(公告)号：US20220230899A1
公开(公告)日：2022-07-21
申请号：US17713645
申请日：2022-04-05
申请人： Carl Zeiss SMT GmbH
发明人： Alex Buxbaum , Amir Avishai , Dmitry Klochkov , Thomas Korb , Eugen Foca , Keumsil Lee
IPC分类号： H01L21/67 , G06T17/00 , G06T7/00 , G06T7/13 , G06T7/73 , G06T7/55 , G06T7/33
摘要： A method of determining a size of a contact area between a first 3D structure and a second 3D structure in an integrated semiconductor sample, includes the following steps: obtaining at least a first cross section image and a second cross section image parallel to the first cross section image, wherein obtaining the first and second cross section images includes subsequently removing a cross section surface layer of the integrated semiconductor sample using a focused ion beam to make a new cross section accessible for imaging, and imaging the new cross section of the integrated semiconductor sample with an imaging device; performing image registration of the obtained cross section images and obtaining a 3D data set; determining a 3D model representing the first 3D structure and the second 3D structure in the 3D data set; and determining a relative overlap of the first 3D structure with the second 3D structure based on the 3D model.

17. 发明授权

US11353478B2 Methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope 有权
公开(公告)号：US11353478B2
公开(公告)日：2022-06-07
申请号：US16423687
申请日：2019-05-28
申请人： Carl Zeiss SMT GmbH
发明人： Gabriel Baralia , Rainer Becker , Kinga Kornilov , Christof Baur , Hans Hermann Pieper
IPC分类号： G01Q60/38 , G01Q70/08 , H01J37/305 , H01J37/317
摘要： The present invention relates to methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope. In particular, the invention relates to a method for hardening a measuring tip for a scanning probe microscope, comprising the step of: Processing the measuring tip with a beam of an energy beam source, the energy beam source being part of a scanning electron microscope.

18. 发明申请

US20220171292A1 OPTICAL DIFFRACTION COMPONENT 有权
公开(公告)号：US20220171292A1
公开(公告)日：2022-06-02
申请号：US17673966
申请日：2022-02-17
申请人： Carl Zeiss SMT GmbH
发明人： Heiko Feldmann
IPC分类号： G03F7/20 , G02B5/18 , G02B5/08
摘要： An optical diffraction component has a periodic grating structure profile. The diffraction structure levels are arranged so that a wavelength range around two different target wavelengths diffracted by the grating structure profile has radiation components with three different phases that interfere destructively with one another. Diffraction structure levels predefine a topography of a grating period of the grating structure profile that is repeated regularly along a period running direction. These include a neutral diffraction structure level, a positive diffraction structure level raised relative thereto, and a negative diffraction structure level lowered relative thereto. The neutral diffraction structure level has an extent along the period running direction which is less than 50% of the extent of the grating period. A difference between the two target wavelengths is less than 50%. The result is an optical diffraction component whose possibilities for use can be extended, for example, to stray light suppression.

19. 发明申请

US20220170735A1 DIFFRACTIVE OPTICAL ELEMENT FOR A TEST INTERFEROMETER 有权
公开(公告)号：US20220170735A1
公开(公告)日：2022-06-02
申请号：US17675516
申请日：2022-02-18
申请人： Carl Zeiss SMT GmbH
发明人： Alexander Winkler , Martin SCHEID , Hans Michael STIEPAN , Jochen HETZLER , Frank EISERT
IPC分类号： G01B11/24 , G01Q60/24 , G02B5/32 , G03H1/00 , G02B5/18
摘要： A diffractive optical element (10) for a test interferometer (100) measures a shape of an optical surface (102). Diffractive shape measuring structures (16) are arranged on a used surface (14) of the element and generate a test wave (122) irradiating the surface when the element is arranged in the interferometer. At least one test field (18) several profile properties of test structures contained in the test field. The profile properties characterize a profile line of the test structures extending transversely with respect to the used surface and include a flank angle of the profile line, a profile depth and a depth of a microtrench in a bottom region of a trench-shaped profile of the test structures. The test field is arranged at one location of the used surface instead of the diffractive shape measuring structures such that the test field is surrounded by several diffractive shape measuring structures.

20. 发明申请

US20220148850A1 AUTOMATED OPERATIONAL CONTROL OF MICRO-TOOLING DEVICES 有权
公开(公告)号：US20220148850A1
公开(公告)日：2022-05-12
申请号：US17580996
申请日：2022-01-21
申请人： Carl Zeiss SMT GmbH
发明人： Ramani Pichumani , Anthony Morin , David Dryden , Chris Park
IPC分类号： H01J37/26 , H01J37/28 , H01J37/22 , G06N20/00
摘要： A micro-tooling device, such as, for example, a scanning electron microscope or a focused-ion beam microscope, provides images. A first machine-learning algorithm and a second machine-learning algorithm are sequentially coupled. The first machine-learning algorithm determines a progress along a predefined workflow based on feature recognition in images associated with the workflow. The second machine-learning algorithm predicts settings of operational parameters of the micro-tooling device in accordance with the progress along the predefined workflow.

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