会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 23. 发明授权
    • Crosslinking agent, crosslinking method, method of controlling gene expression, and method of examining gene function
    • 交联剂,交联方法,基因表达控制方法及检测基因功能的方法
    • US08084625B2
    • 2011-12-27
    • US11817311
    • 2006-02-27
    • Toshiaki FurutaNatsuyo Imaizumi
    • Toshiaki FurutaNatsuyo Imaizumi
    • C07D311/02C07D311/00
    • C12N15/111C07D311/06C07D407/04C12N2310/14C12N2310/3511C12N2320/50C12Q1/68Y02P20/55C12Q2523/101
    • The present invention provides a crosslinking agent which have photodegradable protective groups at two ends to crosslink double-stranded nucleic acid, a nucleic acid and a protein or a polypeptide, or proteins or polypeptides, in particular, double-stranded RNA; a method for crosslinking a double-stranded RNA or the like using the same; a method for regulating gene expression, which can control the expression of a target gene at an arbitrary timing and location; and a method for examining a gene function.According to the present invention, crosslinking between double-stranded nucleic acids between a nucleic acid and a protein or a polypeptide, or between proteins or polypeptides, in particular, between double-stranded RNA can be easily formed, and in addition, the crosslinking can also be easily removed, so that the expression of a target gene can be easily controlled at an arbitrary timing and location with high efficiency. Hence, as a result, function examination and/or identification of a gene that is expressed at a specific timing and location can be performed. In addition, the RNAi effect of a double-stranded RNA (siRNA) that cannot be easily inhibited by a conventional caged compound can be inhibited, and the expression of a target gene can be easily controlled at an arbitrary timing and location.
    • 本发明提供一种交联剂,其在两端具有可光降解的保护基以交联双链核酸,核酸和蛋白质或多肽,或蛋白质或多肽,特别是双链RNA; 使用该双链RNA等进行交联的方法; 调控基因表达的方法,其可以在任意的时间和位置控制靶基因的表达; 以及检测基因功能的方法。 根据本发明,可以容易地形成在核酸和蛋白质或多肽之间或蛋白质或多肽之间,特别是双链RNA之间的双链核酸之间的交联,此外,交联可以 也容易除去,从而能够以高效率容易地在任意的时间和位置控制靶基因的表达。 因此,可以进行在特定的时间和位置表达的基因的功能检查和/或识别。 此外,可以抑制不能容易地被常规笼状化合物抑制的双链RNA(siRNA)的RNAi效应,并且可以容易地在任意的时间和位置控制靶基因的表达。
    • 25. 发明申请
    • ETCHING AGENT, ETCHING METHOD AND LIQUID FOR PREPARING ETCHING AGENT
    • 蚀刻剂,蚀刻方法和用于制备蚀刻剂的液体
    • US20110230053A1
    • 2011-09-22
    • US12808903
    • 2008-12-19
    • Osamu MatsudaNobuyuki KikuchiIchiro HayashidaSatoshi Shirahata
    • Osamu MatsudaNobuyuki KikuchiIchiro HayashidaSatoshi Shirahata
    • H01L21/306C09K13/00C09K13/02
    • H01L21/30604C23F1/38C23F1/44H01L21/32134
    • The present invention is directed to provide an etching agent for a semiconductor substrate, which is capable of etching a titanium (Ti)-based metal film or a tungsten (W)-based metal film on a semiconductor substrate and an etching method using relevant etching agent, and relates to a liquid for preparing the etching agent for a semiconductor substrate composed of a solution comprising (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) 0.01 to 3% by weight of two or more kinds of anion species other than phosphonic acid chelating agents having a hydroxyl group, in which anion species have no oxidizing power, an etching method characterized by etching a titanium (Ti)-based metal film or a tungsten (W)-based metal film on a semiconductor substrate using relevant etching agent for a semiconductor substrate, further, a solution comprising (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) anion species other than phosphonic acid chelating agents having a hydroxyl group, in which anion species have no oxidizing power.
    • 本发明旨在提供一种能够在半导体衬底上蚀刻基于钛(Ti)的金属膜或基于钨(W)的金属膜的半导体衬底的蚀刻剂和使用相关蚀刻的蚀刻方法 并且涉及一种用于制备半导体衬底蚀刻剂的液体,该半导体衬底由包含(A)过氧化氢,(B)具有羟基的膦酸螯合剂,(C)碱性化合物和(D) -1)铜防腐剂和/或(D-2)0.01〜3重量%的除了具有羟基的膦酸螯合剂以外的两种或更多种阴离子物质,其中阴离子种类不具有氧化能力,蚀刻 其特征在于,使用相关的半导体衬底蚀刻剂在半导体衬底上蚀刻基于钛(Ti)的金属膜或基于钨(W))的金属膜,此外,还包括(B)膦酸螯合剂的溶液,所述膦酸螯合剂具有 一个 羟基,(C)碱性化合物和(D-1)除了具有羟基的膦酸螯合剂以外的铜防腐和/或(D-2)阴离子物质,其中阴离子种类不具有氧化能力。
    • 29. 发明申请
    • SEMICONDUCTOR SURFACE TREATING AGENT COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SURFACE USING THE SEMICONDUCTOR SURFACE TREATING AGENT COMPOSITION
    • 半导体表面处理剂组合物和使用半导体表面处理剂组合物处理半导体表面的方法的SEMICONDUCTOR SURFACE TRETING AGENT COMPOSITION
    • US20110021400A1
    • 2011-01-27
    • US12921302
    • 2009-03-06
    • Hironori MizutaOsamu Matsuda
    • Hironori MizutaOsamu Matsuda
    • C11D3/60
    • H01L21/31133C11D11/0047G03F7/425G03F7/426
    • An object of the present invention is to provide a semiconductor surface treating agent composition, which can realize easy removing of an anti-reflection coating layer in a production process of a semiconductor device or the like at a low temperature in a short time, a method for treating a semiconductor surface using the same, and further a semiconductor surface treating agent composition, which can realize not only removing of both layer of an anti-reflection coating layer and a resist layer, but can realize even removing of a cured resist layer produced in an etching process, and a method for treating a semiconductor surface using the same. The semiconductor surface treating agent composition of the present invention is characterized by comprising a compound which generates a fluorine ion in water, a carbon radical generating agent, and water and optionally an organic solvent, and the method for treating a semiconductor surface of the present invention is characterized by using the composition.
    • 本发明的目的是提供一种半导体表面处理剂组合物,其能够在短时间内在低温下在半导体装置等的制造工序中实现易于除去防反射涂层的方法 用于处理使用该半导体表面的半导体表面的半导体表面,以及半导体表面处理剂组合物,其不仅可以实现两层抗反射涂层和抗蚀剂层的去除,而且可以实现均匀去除所生产的固化的抗蚀剂层 在蚀刻工艺中,以及使用该方法处理半导体表面的方法。 本发明的半导体表面处理剂组合物的特征在于含有在水中产生氟离子的化合物,碳自由基产生剂,水和任选的有机溶剂,以及本发明的半导体表面处理方法 其特征在于使用该组合物。