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21. 发明授权

US08716111B2 Method for manufacturing trench type superjunction device and trench type superjunction device 有权
标题翻译：沟槽式超导装置及沟槽式超导装置的制造方法
公开(公告)号：US08716111B2
公开(公告)日：2014-05-06
申请号：US13167450
申请日：2011-06-23
申请人： Fei Wang , Shengan Xiao , Wensheng Qian
发明人： Fei Wang , Shengan Xiao , Wensheng Qian
IPC分类号： H01L21/20
CPC分类号： H01L21/26513 , H01L21/26586 , H01L29/0634 , H01L29/1095 , H01L29/66712 , H01L29/7802 , H01L29/7811
摘要： A method for manufacturing trench type super junction device is disclosed. The method includes the step of forming one or more P type implantation regions in the N type epitaxial layer below the bottom of each trench. By using this method, a super junction device having alternating P type and N type regions is produced, wherein the P type region is formed by P type silicon filled in the trench and P type implantation regions below the trench. The present invention can greatly improve the breakdown voltage of a super junction MOSFET.
摘要翻译：公开了一种用于制造沟槽型超结装置的方法。该方法包括在每个沟槽的底部下方的N型外延层中形成一个或多个P型注入区的步骤。通过使用该方法，制造具有交替的P型和N型区域的超接合器件，其中P型区域由填充在沟槽中的P型硅和沟槽下方的P型注入区域形成。本发明可以大大提高超结MOSFET的击穿电压。

22. 发明授权

US08698741B1 Methods and apparatus for medical device cursor control and touchpad-based navigation 有权
标题翻译：医疗设备光标控制和触摸板导航的方法和设备
公开(公告)号：US08698741B1
公开(公告)日：2014-04-15
申请号：US12355082
申请日：2009-01-16
申请人： Fei Wang , Martin Crnkovich
发明人： Fei Wang , Martin Crnkovich
IPC分类号： G06F3/033
CPC分类号： G06F3/0488 , G06F19/00 , G16H40/63
摘要： The invention provides, in some aspects, medical apparatus with software-based cursor control and graphical user interface hotspot selection. This can be used, by way of non-limiting example, as part of a graphical user interface by which doctors, nurses, patient care technicians, other health care providers, and/or patients can enter data into enter data and/or to control the apparatus and/or associated medical equipment.
摘要翻译：本发明在一些方面提供了具有基于软件的光标控制和图形用户界面热点选择的医疗装置。作为图形用户界面的一部分，这可以作为非限制性示例使用，医生，护士，患者护理技术人员，其他医疗保健提供者和/或患者可以通过该界面将数据输入到输入数据和/或控制该装置和/或相关联的医疗设备。

23. 发明授权

US08655467B2 Audio testing system and method 有权
标题翻译：音频测试系统和方法
公开(公告)号：US08655467B2
公开(公告)日：2014-02-18
申请号：US13012822
申请日：2011-01-25
申请人： Yu-Kai Xiong , Xin Lu , Shih-Fang Wong , Dong-Sheng Lv , Zheng-Fei Wang , Xin-Hua Li
发明人： Yu-Kai Xiong , Xin Lu , Shih-Fang Wong , Dong-Sheng Lv , Zheng-Fei Wang , Xin-Hua Li
IPC分类号： G06F17/00
CPC分类号： G10L25/45 , G10L25/69
摘要： An audio testing system includes an acquisition unit, an input unit, a first analysis unit, a second analysis unit, and an output unit. The acquisition unit obtains an audio signal played back by the audio player. The input unit generates a first input signal and a second input signal. The first analysis unit analyzes the acquired audio signal with a first analysis method in response to the first input signal to obtain performance parameters of the audio player. The second analysis unit analyzes the acquired audio signal with a second analysis method in response to the second input signal to obtain another set of performance parameters of the audio player. The first analysis unit is more accurate than the second analysis unit, and efficiency of the second analysis unit exceeds that of the first analysis unit.
摘要翻译：音频测试系统包括采集单元，输入单元，第一分析单元，第二分析单元和输出单元。获取单元获得由音频播放器播放的音频信号。输入单元产生第一输入信号和第二输入信号。第一分析单元响应于第一输入信号利用第一分析方法分析所获取的音频信号，以获得音频播放器的性能参数。第二分析单元响应于第二输入信号用第二分析方法分析所获取的音频信号，以获得音频播放器的另一组性能参数。第一分析单元比第二分析单元更精确，第二分析单元的效率超过第一分析单元的效率。

24. 发明申请

US20130323627A1 Photomasks, Methods Of Forming A Photomask, And Methods Of Photolithographically Patterning A Substrate 有权
标题翻译：光掩模，形成光掩模的方法和光刻图案的方法
公开(公告)号：US20130323627A1
公开(公告)日：2013-12-05
申请号：US13488231
申请日：2012-06-04
申请人： Fei Wang , Ezequiel Vidal Russell , Chung-Yi Lee
发明人： Fei Wang , Ezequiel Vidal Russell , Chung-Yi Lee
IPC分类号： G03F1/26 , G03F1/32 , G03F1/76 , G03F7/20 , G03F1/68 , G03F1/80 , G03F1/00 , G03F1/30
CPC分类号： G03F1/32 , G03F1/00 , G03F1/26 , G03F1/30 , G03F1/36 , G03F1/38 , G03F1/68
摘要： A photomask includes a substrate having a device region and an adjacent edge region over transparent material. The device region includes spaced primary features of constant pitch at least adjacent the edge region. The edge region includes spaced sub-resolution assist features of the constant pitch of the spaced primary features at least adjacent the device region and which are off-phase by from about 30° to about 150° from +/−180°. Additional embodiments, including methods, are disclosed.
摘要翻译：光掩模包括具有在透明材料上的器件区域和相邻边缘区域的衬底。器件区域包括至少邻近边缘区域的恒定间距的间隔的主要特征。边缘区域包括间隔开的主要特征的至少相邻于器件区域的恒定间距的间隔的次分辨率辅助特征，并且与+/- 180°相差约30°至约150°。公开了包括方法的其它实施例。

25. 发明申请

US20130306621A1 REAL-TIME CALIBRATION FOR WAFER PROCESSING CHAMBER LAMP MODULES 有权
标题翻译：用于加工室内灯模块的实时校准
公开(公告)号：US20130306621A1
公开(公告)日：2013-11-21
申请号：US13471583
申请日：2012-05-15
申请人： Chih-Tien Chang , Sunny Wu , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
发明人： Chih-Tien Chang , Sunny Wu , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
IPC分类号： H05B1/02
CPC分类号： H01L22/26 , H01L21/324 , H01L21/67115 , H01L21/67248 , H05B1/0233
摘要： An apparatus, a system and a method are disclosed. An exemplary apparatus includes a wafer processing chamber. The apparatus further includes radiant heating elements disposed in different zones and operable to heat different portions of a wafer located within the wafer processing chamber. The apparatus further includes sensors disposed outside the wafer processing chamber and operable to monitor energy from the radiant heating elements disposed in the different zones. The apparatus further includes a computer configured to utilize the sensors to characterize the radiant heating elements disposed in the different zones and to provide a calibration for the radiant heating elements disposed in the different zones such that a substantially uniform temperature profile is maintained across a surface of the wafer.
摘要翻译：公开了一种装置，系统和方法。示例性装置包括晶片处理室。该设备还包括设置在不同区域中的辐射加热元件，其可操作以加热位于晶片处理室内的晶片的不同部分。该装置还包括设置在晶片处理室外部的传感器，其可操作以监测来自设置在不同区域中的辐射加热元件的能量。该装置还包括计算机，其被配置为利用传感器来表征设置在不同区域中的辐射加热元件，并且为放置在不同区域中的辐射加热元件提供校准，使得基本上均匀的温度分布保持在晶圆。

26. 发明申请

US20130282393A1 COMBINING KNOWLEDGE AND DATA DRIVEN INSIGHTS FOR IDENTIFYING RISK FACTORS IN HEALTHCARE 审中-公开
公开(公告)号：US20130282393A1
公开(公告)日：2013-10-24
申请号：US13611366
申请日：2012-09-12
申请人： Shahram Ebadollahi , Jianying Hu , Dijun Luo , Marianthi Markatou , Jimeng Sun , Fei Wang
发明人： Shahram Ebadollahi , Jianying Hu , Dijun Luo , Marianthi Markatou , Jimeng Sun , Fei Wang
IPC分类号： G06Q50/22
CPC分类号： G06Q10/10 , G16H50/30
摘要： Systems and methods for risk factor identification include identifying a first set of risk factors from personal data. A second set of risk factors is identified from at least one of a user input and a knowledge source. The first set is combined with the second set, using a processor, by selecting a number of risk factors from the first set that augment the second set of risk factors to determine a combined list of risk factors that predict a condition of interest.

27. 发明授权

US08546882B2 Terminal structure for superjunction device and method of manufacturing the same 有权
标题翻译：超结装置的端子结构及其制造方法
公开(公告)号：US08546882B2
公开(公告)日：2013-10-01
申请号：US13076289
申请日：2011-03-30
申请人： Shengan Xiao , Fei Wang , Yanping Liu
发明人： Shengan Xiao , Fei Wang , Yanping Liu
IPC分类号： H01L21/331
CPC分类号： H01L29/66712 , H01L29/0634 , H01L29/0638 , H01L29/0696 , H01L29/1095 , H01L29/402 , H01L29/404 , H01L29/7811
摘要： A terminal structure for superjunction device is disclosed. The terminal structure comprises from inside out at least one P type implantation ring and several P type trench rings formed in an N type epitaxial layer to form alternating P type and N type regions. A channel cut-off ring is formed at the border of the device. The P type implantation ring is formed adjacent to the active area of the device and covers at least one trench ring. A terminal dielectric layer is formed to cover the P type implantation ring and the trench rings. A plurality of field plates are formed above the terminal dielectric layer. Methods of manufacturing terminal structure are also disclosed.
摘要翻译：公开了一种超结装置的端子结构。端子结构包括至少一个P型注入环和形成在N型外延层中的多个P型沟槽，以形成交替的P型和N型区。在设备的边界处形成通道切断环。 P型注入环邻近器件的有源区形成并且覆盖至少一个沟槽环。形成端子电介质层以覆盖P型注入环和沟槽环。多个场板形成在端子电介质层的上方。还公开了端子结构的制造方法。

28. 发明申请

US20130244429A1 SHOT BLASTING MATERIAL USED FOR SILICON SUBSTRATE SURFACE TREATMENT AND METHOD FOR PREPARING SILICON SUBSTRATE 审中-公开
标题翻译：用于硅基材表面处理的喷砂材料及其制备硅基材的方法
公开(公告)号：US20130244429A1
公开(公告)日：2013-09-19
申请号：US13884804
申请日：2012-08-15
申请人： Dandan Wan , Fei Wang , Maria Fabra-Puchol
发明人： Dandan Wan , Fei Wang , Maria Fabra-Puchol
IPC分类号： H01L31/0236
CPC分类号： H01L31/02366 , B24C3/322 , B24C11/00 , H01L31/1804 , H01L2924/0002 , Y02E10/547 , Y02P70/521
摘要： A shot blasting material used for silicon substrate surface treatment and a method for preparing a silicon substrate. The shot blasting material includes silicon carbide particles, and the median particle diameter of the silicon carbide particles is 1 μm to 30 μm. Surface treatment can be performed on at least one surface of a silicon substrate in a bombarding manner through the shot blasting material. The particle diameter of the silicon carbide particles used for bombarding is small, and only a mechanical damage layer with a small thickness is formed on a first surface of the silicon substrate, so in the subsequent chemical treatment procedure, it is not required to add concentrated sulfuric acid to a chemical corrosive liquid, and a corrosion step and a cleaning step may be combined into one step, thereby reducing the process flow time, and decreasing the process cost; meanwhile, the method is environment friendly.
摘要翻译：用于硅衬底表面处理的抛丸材料和制备硅衬底的方法。喷丸材料包括碳化硅颗粒，碳化硅颗粒的中值粒径为1〜30μm。可以通过抛丸材料以轰击的方式在硅衬底的至少一个表面上进行表面处理。用于轰击的碳化硅颗粒的粒径小，并且在硅衬底的第一表面上仅形成厚度小的机械损伤层，因此在随后的化学处理过程中，不需要添加浓缩硫酸化学腐蚀性液体，腐蚀步骤和清洗步骤可以组合成一个步骤，从而减少工艺流程，降低工艺成本; 同时，该方法环保。

29. 发明申请

US20130183844A1 WATERPROOF ELECTRICAL CONNECTOR 有权
标题翻译：防水电气连接器
公开(公告)号：US20130183844A1
公开(公告)日：2013-07-18
申请号：US13716225
申请日：2012-12-17
申请人： FEI WANG
发明人： FEI WANG
IPC分类号： H01R33/965 , H01R24/68
CPC分类号： H01R33/965 , H01R12/725 , H01R13/5219 , H01R24/62 , H01R24/68
摘要： An electrical connector (100) includes a metallic shell (1), an insulative housing (2) combined to the metallic shell, a plurality of terminals (3) retained in the insulative housing, an insulative cover (5) covering the metallic shell, a waterproof ring (7) and a waterproof plate (8) respectively attached to a front end and a rear face of the insulative cover, and a fixing member (6) attached to the insulative cover. The fixing member includes a rectangular portion (61), at least one corner portion (62) bending from the rectangular portion along a first vertical direction and penetrating into the insulative cover, at least one soldering pad (63) extending laterally from the rectangular portion, and at least one teared portion (64) bending from the rectangular portion towards a second vertical direction opposite to the first vertical direction.
摘要翻译：电连接器（100）包括金属壳（1），与金属壳结合的绝缘壳体（2），保持在绝缘壳体中的多个端子（3），覆盖金属壳体的绝缘盖（5）分别安装在绝缘盖的前端和后面的防水环（7）和防水板（8），以及安装在绝缘罩上的固定件（6）。固定构件包括矩形部分（61），至少一个拐角部分（62），其从矩形部分沿着第一垂直方向弯曲并且穿透绝缘盖;至少一个从矩形部分横向延伸的焊盘（63），以及至少一个从所述矩形部分朝向与所述第一垂直方向相反的第二垂直方向弯曲的倾斜部分（64）。

30. 发明申请

US20130144419A1 INTEGRATED CIRCUIT MANUFACTURING TOOL CONDITION MONITORING SYSTEM AND METHOD 有权
标题翻译：集成电路制造工具条件监控系统及方法
公开(公告)号：US20130144419A1
公开(公告)日：2013-06-06
申请号：US13308644
申请日：2011-12-01
申请人： Po-Feng Tsai , Chia-Tong Ho , Sunny Wu , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
发明人： Po-Feng Tsai , Chia-Tong Ho , Sunny Wu , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
IPC分类号： G06F19/00
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A system and method for monitoring a process tool of an integrated circuit manufacturing system are disclosed. An exemplary method includes defining zones of an integrated circuit manufacturing process tool; grouping parameters of the integrated circuit manufacturing process tool based on the defined zones; and evaluating a condition of the integrated circuit manufacturing process tool based on the grouped parameters.
摘要翻译：公开了一种用于监控集成电路制造系统的处理工具的系统和方法。示例性方法包括限定集成电路制造工艺工具的区域; 基于定义的区域对集成电路制造工艺工具进行分组参数; 并基于分组的参数来评估集成电路制造处理工具的状况。

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