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    • 6. 发明申请
    • SYSTEM AND METHOD FOR IMPLEMENTING MULTI-RESOLUTION ADVANCED PROCESS CONTROL
    • 用于实施多分辨率高级过程控制的系统和方法
    • US20110213478A1
    • 2011-09-01
    • US13106711
    • 2011-05-12
    • Andy TsenJin-Ning SungPo-Feng TsaiJong-l MouYen-Wei Cheng
    • Andy TsenJin-Ning SungPo-Feng TsaiJong-l MouYen-Wei Cheng
    • G06F17/00
    • H01L22/20G05B19/41875H01L22/12Y02P90/22Y02P90/26
    • System and method for implementing multi-resolution advanced process control (“APC”) are described. One embodiment is a method comprising obtaining low resolution metrology data and high resolution metrology data related to a process module for performing a process on the wafer; modeling a process variable of the process as a function of the low resolution metrology data to generate a low-resolution process model; and modeling the process variable as a function of the high resolution metrology data to generate a high-resolution process model. The method further includes calibrating the low resolution process model; combining the calibrated low resolution process model with the high resolution process model to generate a multi-resolution process model that models the process variable as a function of both the low resolution metrology data and the high resolution metrology data; and analyzing a response of the multi-resolution process model and the low and high resolution metrology data to control performance of a process module.
    • 描述了用于实现多分辨率高级过程控制(“APC”)的系统和方法。 一个实施例是一种方法,包括获得与用于在晶片上执行处理的处理模块相关的低分辨率度量数据和高分辨率度量数据; 将过程的过程变量建模为低分辨率度量数据的函数,以生成低分辨率过程模型; 并将过程变量建模为高分辨率度量数据的函数,以生成高分辨率过程模型。 该方法还包括校准低分辨率过程模型; 将校准的低分辨率过程模型与高分辨率过程模型相结合,以生成多分辨率过程模型,其将过程变量建模为低分辨率度量数据和高分辨率度量数据的函数; 并分析多分辨率过程模型和低分辨率和高分辨率度量数据的响应,以控制过程模块的性能。
    • 7. 发明申请
    • SYSTEM AND METHOD FOR IMPLEMENTING A VIRTUAL METROLOGY ADVANCED PROCESS CONTROL PLATFORM
    • 虚拟计量流程控制平台的系统和方法
    • US20100312374A1
    • 2010-12-09
    • US12478956
    • 2009-06-05
    • Po-Feng TsaiAndy TsenJin-Ning Sung
    • Po-Feng TsaiAndy TsenJin-Ning Sung
    • G06F17/50
    • G01R31/2894H01L22/12H01L22/20
    • System and method for implementing a VM APC platform are described. In one embodiment, the VM APC system comprises a process tool for processing a plurality of wafers, a metrology tool for measuring a sample wafer of the plurality of wafers and generating actual metrology data therefor, and a VM model for predicting metrology data for each of the plurality of wafers. The actual metrology data is received from the metrology tool and used to update the VM model. Key variables of the virtual metrology model are updated only in response to a determination that the VM model is inaccurate and parameters of the VM model are updated responsive to receipt of the actual metrology data for the sample wafer of the plurality of wafers. The system also includes an APC controller for receiving the predicted metrology data and the actual metrology data and controlling an operation of the process tool based on the received data
    • 描述了实现VM APC平台的系统和方法。 在一个实施例中,VM APC系统包括用于处理多个晶片的处理工具,用于测量多个晶片中的样品晶片并产生其实际测量数据的计量工具,以及用于预测每个晶片的测量数据的VM模型 多个晶片。 实际计量数据从计量工具中接收并用于更新VM模型。 虚拟测量模型的关键变量仅在响应于确定VM模型不准确并且响应于接收到多个晶片的样本晶片的实际测量数据来更新VM模型的参数而被更新。 该系统还包括用于接收预测计量数据和实际计量数据的APC控制器,并且基于接收到的数据来控制处理工具的操作