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1. 发明授权

US08549012B2 Processing exception handling 有权
标题翻译：处理异常处理
公开(公告)号：US08549012B2
公开(公告)日：2013-10-01
申请号：US12778855
申请日：2010-05-12
申请人： Po-Feng Tsai , Jin-Ning Sung , Yen-Di Tsen , Jo Fei Wang , Jong-I Mou
发明人： Po-Feng Tsai , Jin-Ning Sung , Yen-Di Tsen , Jo Fei Wang , Jong-I Mou
IPC分类号： G06F7/00 , G06F17/30
CPC分类号： G06F7/00 , G05B19/41865 , G05B2219/31352 , G05B2219/33303 , G06F17/30
摘要： In accordance with an embodiment, a method for exception handling comprises accessing an exception type for an exception, filtering historical data based on at least one defined criterion to provide a data train comprising data sets, assigning a weight to each data set, and providing a current control parameter. The data sets each comprise a historical condition and a historical control parameter, and the weight assigned to each data set is based on each historical condition. The current control parameter is provided using the weight and the historical control parameter for each data set.
摘要翻译：根据实施例，用于异常处理的方法包括访问异常的异常类型，基于至少一个定义的标准过滤历史数据，以提供包括数据集的数据队列，为每个数据集分配权重，以及提供电流控制参数。数据集各自包含历史条件和历史控制参数，并且分配给每个数据集的权重基于每个历史条件。使用每个数据集的权重和历史控制参数提供当前的控制参数。

2. 发明申请

US20130144423A1 SYSTEMS AND METHODS OF AUTOMATIC BOUNDARY CONTROL FOR SEMICONDUCTOR PROCESSES 有权
标题翻译：半导体工艺自动边界控制系统与方法
公开(公告)号：US20130144423A1
公开(公告)日：2013-06-06
申请号：US13311601
申请日：2011-12-06
申请人： Chih-Wei HSU , Mei-Jen WU , Yen-Di TSEN , Jo Fei WANG , Jong-I MOU , Chin-Hsiang LIN
发明人： Chih-Wei HSU , Mei-Jen WU , Yen-Di TSEN , Jo Fei WANG , Jong-I MOU , Chin-Hsiang LIN
IPC分类号： G06F19/00
CPC分类号： G05B19/18 , G05B2219/45031 , H01L22/20
摘要： A system and method of automatically calculating boundaries for a semiconductor fabrication process. The method includes selecting a first parameter for monitoring during a semiconductor fabrication process. A first set of values for the first parameter are received and a group value of the first set is determined. Each value in the first set of values is normalized. A first weighting factor is selected based on a number of values in the first set. The embodiment also includes generating a first and a second boundary value as a function of the weighting factor, the first set normalized values and the group value of the first set and applying the first and second boundary values to control the semiconductor fabrication process.
摘要翻译：一种自动计算半导体制造工艺边界的系统和方法。该方法包括在半导体制造过程中选择用于监测的第一参数。接收第一参数的第一组值，并确定第一组的组值。第一组值中的每个值都被归一化。基于第一组中的值的数量来选择第一加权因子。该实施例还包括根据加权因子，第一集合归一化值和第一组的组值产生第一和第二边界值，并施加第一和第二边界值以控制半导体制造过程。

3. 发明申请

US20110301736A1 APC Model Extension Using Existing APC Models 有权
标题翻译： APC型号扩展使用现有的APC型号
公开(公告)号：US20110301736A1
公开(公告)日：2011-12-08
申请号：US12793307
申请日：2010-06-03
申请人： Po-Feng Tsai , Yen-Di Tsen , Jo Fei Wang , Jong-I Mou
发明人： Po-Feng Tsai , Yen-Di Tsen , Jo Fei Wang , Jong-I Mou
IPC分类号： G06F17/50
CPC分类号： G05B17/02 , H01L22/20
摘要： A method of extending advanced process control (APC) models includes constructing an APC model table including APC model parameters of a plurality of products and a plurality of work stations. The APC model table includes empty cells and cells filled with existing APC model parameters. Average APC model parameters of the existing APC model parameters are calculated, and filled into the empty cells as initial values. An iterative calculation is performed to update the empty cells with updated values.
摘要翻译：扩展先进过程控制（APC）模型的方法包括构建包括多个产品的APC模型参数和多个工作站的APC模型表。 APC模型表包括空单元格和填充有现有APC模型参数的单元格。计算现有APC模型参数的平均APC模型参数，并作为初始值填充到空单元格中。执行迭代计算以更新值更新空单元格。

4. 发明申请

US20110042006A1 E-CHUCK WITH AUTOMATED CLAMPED FORCE ADJUSTMENT AND CALIBRATION 有权
标题翻译：具有自动钳位力调整和校准的电动自行车
公开(公告)号：US20110042006A1
公开(公告)日：2011-02-24
申请号：US12938610
申请日：2010-11-03
申请人： Jo Fei Wang , Sunny Wu , Jong-I Mou
发明人： Jo Fei Wang , Sunny Wu , Jong-I Mou
IPC分类号： H01L21/46 , G06F19/00 , H01L21/465
CPC分类号： H01L21/6831 , H01L22/20 , H01L2924/0002 , Y10S438/909 , H01L2924/00
摘要： The present disclosure describes a semiconductor manufacturing apparatus. The apparatus includes a processing chamber designed to perform a process to a wafer; an electrostatic chuck (E-chuck) configured in the processing chamber and designed to secure the wafer, wherein the E-chuck includes an electrode and a dielectric feature formed on the electrode; a tuning structure designed to hold the E-chuck to the processing chamber by clamping forces, wherein the tuning structure is operable to dynamically adjust the clamping forces; a sensor integrated with the E-chuck and sensitive to the clamping forces; and a process control module for controlling the tuning structure to adjust the clamping forces based on pre-measurement data from the wafer and sensor data from the sensor.
摘要翻译：本公开描述了一种半导体制造装置。该设备包括设计成对晶片执行处理的处理室; 配置在所述处理室中并设计成固定所述晶片的静电卡盘（E卡盘），其中所述E卡盘包括形成在所述电极上的电极和电介质特征; 调谐结构，其被设计成通过夹紧力将所述E卡盘保持在所述处理室中，其中所述调谐结构可操作以动态地调节所述夹紧力; 与E型卡盘集成并对夹紧力敏感的传感器; 以及过程控制模块，用于基于来自晶片的预测量数据和来自传感器的传感器数据来控制调谐结构以调整夹紧力。

5. 发明授权

US5763006A Method and apparatus for automatic purge of HMDS vapor piping 失效
公开(公告)号：US5763006A
公开(公告)日：1998-06-09
申请号：US725756
申请日：1996-10-04
申请人： Chang-Chu Yao , Tsun-Ching Lin , Jo-Fei Wang , Hsiao-Lan Yeh
发明人： Chang-Chu Yao , Tsun-Ching Lin , Jo-Fei Wang , Hsiao-Lan Yeh
IPC分类号： C23C16/40 , C23C16/44 , H01L21/312 , C23L16/56
CPC分类号： C23C16/4408 , C23C16/401 , H01L21/3121
摘要： A number of air actuated valves are added to a conventional apparatus for treating semiconductor wafers with HMDS, hexamethyl-disilazane, vapor to improve the adhesion between the wafers and resist layers. These valves allow for automatic purging of the HMDS vapor from the pipes in the apparatus by dry nitrogen thereby preventing HMDS vapor condensation in the pipes which leads to contamination of the HMDS supply. The valve system prevents any backstreaming of nitrogen gas into the HMDS supply tank.

6. 发明授权

US08685759B2 E-chuck with automated clamped force adjustment and calibration 有权
标题翻译：电动卡盘采用自动夹紧力调节和校准
公开(公告)号：US08685759B2
公开(公告)日：2014-04-01
申请号：US12938610
申请日：2010-11-03
申请人： Jo Fei Wang , Sunny Wu , Jong-I Mou
发明人： Jo Fei Wang , Sunny Wu , Jong-I Mou
IPC分类号： H01L21/66
CPC分类号： H01L21/6831 , H01L22/20 , H01L2924/0002 , Y10S438/909 , H01L2924/00
摘要： The present disclosure describes a semiconductor manufacturing apparatus. The apparatus includes a processing chamber designed to perform a process to a wafer; an electrostatic chuck (E-chuck) configured in the processing chamber and designed to secure the wafer, wherein the E-chuck includes an electrode and a dielectric feature formed on the electrode; a tuning structure designed to hold the E-chuck to the processing chamber by clamping forces, wherein the tuning structure is operable to dynamically adjust the clamping forces; a sensor integrated with the E-chuck and sensitive to the clamping forces; and a process control module for controlling the tuning structure to adjust the clamping forces based on pre-measurement data from the wafer and sensor data from the sensor.
摘要翻译：本公开描述了一种半导体制造装置。该设备包括设计成对晶片执行处理的处理室; 配置在所述处理室中并设计成固定所述晶片的静电卡盘（E卡盘），其中所述E卡盘包括形成在所述电极上的电极和电介质特征; 调谐结构，其被设计成通过夹紧力将所述E卡盘保持在所述处理室中，其中所述调谐结构可操作以动态地调节所述夹紧力; 与E型卡盘集成并对夹紧力敏感的传感器; 以及过程控制模块，用于基于来自晶片的预测量数据和来自传感器的传感器数据来控制调谐结构以调整夹紧力。

7. 发明申请

US20140067324A1 QUALITATIVE FAULT DETECTION AND CLASSIFICATION SYSTEM FOR TOOL CONDITION MONITORING AND ASSOCIATED METHODS 有权
标题翻译：用于工具条件监测和相关方法的定性故障检测和分类系统
公开(公告)号：US20140067324A1
公开(公告)日：2014-03-06
申请号：US13603079
申请日：2012-09-04
申请人： Chia-Tong Ho , Po-Feng Tsai , Jung-Chang Chen , Tze-Liang Lee , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
发明人： Chia-Tong Ho , Po-Feng Tsai , Jung-Chang Chen , Tze-Liang Lee , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
IPC分类号： G06F15/00
CPC分类号： G05B19/4065 , G05B2219/37252 , G05B2219/45031
摘要： The present disclosure provides various methods for tool condition monitoring, including systems for implementing such monitoring. An exemplary method includes receiving data associated with a process performed on wafers by an integrated circuit manufacturing process tool; and monitoring a condition of the integrated circuit manufacturing process tool using the data. The monitoring includes evaluating the data based on an abnormality identification criterion, an abnormality filtering criterion, and an abnormality threshold to determine whether the data meets an alarm threshold. The method may further include issuing an alarm when the data meets the alarm threshold.
摘要翻译：本公开提供了用于工具状态监测的各种方法，包括用于实现这种监视的系统。一种示例性方法包括：通过集成电路制造工艺工具接收与在晶片上执行的处理相关联的数据; 以及使用该数据来监视集成电路制造工艺工具的状态。监视包括基于异常识别标准，异常过滤标准和异常阈值来评估数据，以确定数据是否满足报警阈值。该方法还可以包括当数据满足报警阈值时发出报警。

8. 发明申请

US20130150997A1 METHOD AND SYSTEM FOR TOOL CONDITION MONITORING 审中-公开
标题翻译：工具条件监测方法与系统
公开(公告)号：US20130150997A1
公开(公告)日：2013-06-13
申请号：US13314850
申请日：2011-12-08
申请人： Po-Feng Tsai , Chia-Tong Ho , Sunny Wu , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
发明人： Po-Feng Tsai , Chia-Tong Ho , Sunny Wu , Jo Fei Wang , Jong-I Mou , Chin-Hsiang Lin
IPC分类号： G06F19/00
CPC分类号： C23C16/52 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method and system for removing control action effects from inline measurement data for tool condition monitoring is disclosed. An exemplary method includes determining a control action effect that contributes to an inline measurement, wherein the inline measurement indicates a wafer characteristic of a wafer processed by a process tool; and evaluating the inline measurement without the control action effect contribution to determine a condition of the process tool.
摘要翻译：公开了一种用于从刀具状态监测的在线测量数据中去除控制动作效果的方法和系统。一种示例性方法包括确定有助于在线测量的控制动作效果，其中在线测量指示由处理工具处理的晶片的晶片特性; 并且在没有控制动作效应贡献的情况下评估在线测量来确定过程工具的状况。

9. 发明授权

US08452439B2 Device performance parmeter tuning method and system 有权
标题翻译：设备性能参数调节方法和系统
公开(公告)号：US08452439B2
公开(公告)日：2013-05-28
申请号：US13048282
申请日：2011-03-15
申请人： Sunny Wu , Chun-Hsien Lin , Kun-Ming Chen , Dung-Yian Hsieh , Hui-Ru Lin , Jo Fei Wang , Jong-I Mou , I-Ching Chu
发明人： Sunny Wu , Chun-Hsien Lin , Kun-Ming Chen , Dung-Yian Hsieh , Hui-Ru Lin , Jo Fei Wang , Jong-I Mou , I-Ching Chu
IPC分类号： G06F19/00 , G01N37/00 , G06F11/30 , G21C17/00
CPC分类号： H01L22/20 , G01R31/2894 , H01L22/14
摘要： A method comprises computing respective regression models for each of a plurality of failure bins based on a plurality of failures identified during wafer electrical tests. Each regression model outputs a wafer yield measure as a function of a plurality of device performance variables. For each failure bin, sensitivity of the wafer yield measure to each of the plurality of device performance variables is determined, and the device performance variables are ranked with respect to sensitivity of the wafer yield measure. A subset of the device performance variables which have highest rankings and which have less than a threshold correlation with each other are selected. The wafer yield measures for each failure bin corresponding to one of the selected subset of device performance variables are combined, to provide a combined wafer yield measure. At least one new process parameter value is selected to effect a change in the one device performance variable, based on the combined wafer yield measure. The at least one new process parameter value is to be used to process at least one additional wafer.
摘要翻译：一种方法包括基于在晶片电测试期间识别的多个故障来计算多个故障仓中的每一个的相应回归模型。每个回归模型输出作为多个设备性能变量的函数的晶片产量测量。对于每个故障仓，确定晶片产量测量对多个器件性能变量中的每一个的灵敏度，并且相对于晶片产量测量的灵敏度对器件性能变量进行排序。选择具有最高排名并且彼此具有小于阈值相关性的设备性能变量的子集。组合对应于所选择的设备性能变量子集之一的每个故障仓的晶片产量测量，以提供组合晶片产量测量。选择至少一个新的过程参数值，以基于组合的晶片产量测量来实现一个器件性能变量的变化。至少一个新的过程参数值将用于处理至少一个附加晶片。

10. 发明授权

US08295965B2 Semiconductor processing dispatch control 有权
标题翻译：半导体处理调度控制
公开(公告)号：US08295965B2
公开(公告)日：2012-10-23
申请号：US12839014
申请日：2010-07-19
申请人： Sunny Wu , Yen-Di Tsen , Chun-Hsien Lin , Keung Hui , Jo Fei Wang , Jong-I Mou
发明人： Sunny Wu , Yen-Di Tsen , Chun-Hsien Lin , Keung Hui , Jo Fei Wang , Jong-I Mou
IPC分类号： G06F19/00 , G01R31/26
CPC分类号： G05B19/4187 , G05B19/042 , G05B19/41865 , G05B2219/2602 , G05B2219/32237 , G05B2219/32423 , G05B2219/45031 , G05B2219/50065 , Y02P90/20
摘要： An embodiment is a method for semiconductor processing control. The method comprises identifying a key process stage from a plurality of process stages based on a parameter of processed wafers, forecasting a trend for a wafer processed by the key process stage and some of the plurality of process stages based on the parameter, and dispatching the wafer to one of a first plurality of tools in a tuning process stage. The one of the first plurality of tools is determined based on the trend.
摘要翻译：实施例是用于半导体处理控制的方法。该方法包括基于处理的晶片的参数从多个处理阶段识别关键处理阶段，基于该参数来预测由密钥处理阶段处理的晶片的趋势以及多个处理阶段中的一些，以及调度晶片转换为调谐处理阶段中的第一多个工具之一。根据趋势确定第一组多个工具中的一个。

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