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    • 25. 发明授权
    • Laser irradiation apparatus and laser irradiation method and method for manufacturing semiconductor device
    • 激光照射装置及激光照射方法及半导体装置的制造方法
    • US07929154B2
    • 2011-04-19
    • US11640394
    • 2006-12-18
    • Koichiro TanakaYoshiaki Yamamoto
    • Koichiro TanakaYoshiaki Yamamoto
    • G01B11/14
    • B23K26/0853B23K26/04B23K26/0738G03F9/7088H01L21/02675H01L21/2026
    • The present invention provides a laser irradiation apparatus and a laser irradiation method which can conduct irradiation of a laser beam accurately by correcting misalignment of an irradiation position of the laser beam from the predetermined position due to temperature change. A laser irradiation apparatus includes a laser oscillator emitting a laser beam; an XY stage provided with an irradiation object; an optical system which shapes the laser beam into a linear beam on a surface of the irradiation object provided on the XY stage; an illumination device which emits light to the surface of the irradiation object; and a camera for imaging reflected light of the light on the surface of the irradiation object, in which misalignment of an irradiation position of the linear beam detected from the reflected light imaged by the camera is corrected.
    • 本发明提供一种激光照射装置和激光照射方法,该激光照射装置和激光照射方法能够通过校正由于温度变化导致的来自预定位置的激光束的照射位置的偏移而精确地进行激光束的照射。 激光照射装置包括发射激光束的激光振荡器; 设置有照射物体的XY台阶; 光学系统,其将激光束成形为设置在XY台上的照射物体的表面上的线性光束; 向照射物体的表面发光的照明装置; 以及用于对照射物体的表面上的光的反射光进行成像的相机,其中从由照相机成像的反射光检测到的线性光束的照射位置的未对准被校正。
    • 26. 发明授权
    • Laser apparatus, laser irradiation method, and manufacturing method of semiconductor device
    • 激光装置,激光照射方法以及半导体装置的制造方法
    • US07920611B2
    • 2011-04-05
    • US12000814
    • 2007-12-18
    • Hidekazu MiyairiAkihisa ShimomuraTamae TakanoMasaki KoyamaKoichiro Tanaka
    • Hidekazu MiyairiAkihisa ShimomuraTamae TakanoMasaki KoyamaKoichiro Tanaka
    • H01S3/13H01S3/22
    • H01S3/131B23K26/702
    • It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as data energy fluctuation of a laser beam. The electric signal is subjected to signal processing to calculate the frequency, amplitude, and phase of the energy fluctuation of the laser beam. The transmittance of a light amount adjusting means is controlled in order that the transmittance changes in antiphase to the phase of the energy fluctuation of the laser beam and with an amplitude capable of reducing the amplitude of laser beam emitted from the oscillator, the control being made based on the phase difference between the phase of a signal that is in synchronization with oscillation of laser beam emitted from the oscillator and the phase calculated, on the energy ratio of the sampled laser beam to laser beam emitted from the oscillator, and on the frequency and amplitude calculated. In the light amount adjusting means, energy of the laser beam oscillated from the oscillator energy is adjusted.
    • 本发明的目的是提供使激光能更稳定的半导体器件的激光装置,激光照射方法和制造方法。 为了达到该目的,从振荡器发射的激光束的一部分被采样以产生包含作为激光束的数据能量波动的电信号。 对信号进行信号处理,计算激光束的能量波动的频率,振幅和相位。 控制光量调节装置的透射率,以便透射率与激光束的能量波动的相位相反,并且能够减小从振荡器发射的激光束的振幅的振幅,进行控制 基于与从振荡器发射的激光束的振荡同步的信号的相位与计算的相位之间的相位差相对于从采样的激光束到从振荡器发射的激光束的能量比,以及频率 并计算振幅。 在光量调节装置中,调整从振荡器能量振荡的激光束的能量。
    • 27. 发明授权
    • Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device
    • 激光照射装置,激光照射方法以及半导体装置的制造方法
    • US07919726B2
    • 2011-04-05
    • US10721075
    • 2003-11-26
    • Koichiro Tanaka
    • Koichiro Tanaka
    • B23K26/00
    • B23K26/0732B23K26/0736B23K26/0738G03B27/48
    • It is an object to provide a laser irradiation apparatus for enlarging an area of a beam spot and reducing a proportion of a region with low crystallinity. It is also an object to provide a laser irradiation apparatus for enhancing throughput with a CW laser beam. Furthermore, it is an object to provide a laser irradiation method and a method for manufacturing a semiconductor device with the laser irradiation apparatus. A region melted by a first pulsed laser beam having harmonic is irradiated with a second CW laser beam. Specifically, the first laser beam has a wavelength of visible light or a shorter wavelength than that of visible light (approximately not more than 830 nm, preferably, not more than 780 nm). Since the first laser beam melts a semiconductor film, an absorption coefficient of the second laser beam to the semiconductor film increases drastically and thereby being more absorbable.
    • 本发明的目的是提供一种激光照射装置,用于扩大光斑的面积并减少低结晶度的区域的比例。 本发明的另一个目的是提供一种激光照射装置,用于通过CW激光束增强产量。 此外,其目的在于提供一种激光照射方法及其制造方法。 由具有谐波的第一脉冲激光束熔化的区域被第二CW激光束照射。 具体地说,第一激光束具有可见光波长或比可见光波长短(大约不大于830nm,优选不大于780nm)。 由于第一激光束熔化半导体膜,所以第二激光束对半导体膜的吸收系数急剧增加,从而更可吸收。
    • 29. 发明申请
    • INSPECTION METHOD AND MANUFACTURING METHOD OF LIGHT-EMITTING DEVICE
    • 发光装置的检测方法和制造方法
    • US20110027918A1
    • 2011-02-03
    • US12841394
    • 2010-07-22
    • Koichiro TANAKA
    • Koichiro TANAKA
    • H01L21/66G01N21/00
    • H01L51/0031G09G3/006G09G3/3208H01L51/5278H01L51/56H01L2251/568
    • In a light-emitting element provided with a thick layer of a plurality of EL layers which are partitioned by a charge generation layer between a pair of electrodes, a portion which a conductive foreign substance enters between the pair of electrodes emits stronger light at a voltage lower than a voltage required when a normal portion starts emitting light. In a light-emitting element provided with a plurality of EL layers which are partitioned by a charge generation layer between a pair of electrodes, a voltage may be applied thereto in the forward direction. Then, an abnormal light-emission portion may be detected because the portion emits light at a luminance of 1 (cd/m2) or higher when the applied voltage is lower than a voltage required when a normal portion starts emitting light. The portion may be irradiated with laser light so as to be insulated.
    • 在设置有由一对电极之间的电荷产生层隔开的多个EL层的厚层的发光元件中,导电异物进入一对电极之间的部分在电压下发射更强的光 低于正常部分开始发光时所需的电压。 在具有由一对电极之间的电荷产生层分隔开的多个EL层的发光元件中,可以向前方施加电压。 然后,当施加的电压低于正常部分开始发光所需的电压时,该部分以1(cd / m2)或更高的亮度发光,可以检测异常发光部分。 该部分可以用激光照射以被绝​​缘。