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21. 发明申请

US20120212164A1 SEMICONDUCTOR DEVICE AND DEVICE WITH USE OF IT 审中-公开
标题翻译：半导体器件及其使用的器件
公开(公告)号：US20120212164A1
公开(公告)日：2012-08-23
申请号：US13368758
申请日：2012-02-08
申请人： Takeshi TERAKAWA , Satoshi MATSUYOSHI , Kazutoyo NARITA , Mutsuhiro MORI
发明人： Takeshi TERAKAWA , Satoshi MATSUYOSHI , Kazutoyo NARITA , Mutsuhiro MORI
IPC分类号： H02P31/00 , H01L29/872
CPC分类号： H01L29/872 , H01L24/01 , H01L29/0619 , H01L29/8611 , H01L2924/12036 , H01L2924/181 , H01L2924/351 , H01L2924/00
摘要： There is disclosed a semiconductor device capable of improving reliability, a rotating electrical machine using the semiconductor device or a vehicle using the semiconductor device. The semiconductor device includes Schottky barrier junctions and pn junctions. The pn junctions are provided in rectification areas and guard ring parts. Breakdown voltage at pn junctions in the rectification area is lower than breakdown voltage at the Schottky barrier junctions and the pn junctions in the guard ring parts.
摘要翻译：公开了能够提高可靠性的半导体装置，使用该半导体装置的旋转电机或使用该半导体装置的车辆。半导体器件包括肖特基势垒结和pn结。整流区和保护环部分设有pn结。整流区域pn结的击穿电压低于肖特基势垒接点处的击穿电压和护环部分的pn结。

22. 发明申请

US20110149625A1 Capacitor Module, Power Converter, Vehicle-Mounted Electrical-Mechanical System 有权
标题翻译：电容器模块，电源转换器，车载机电系统
公开(公告)号：US20110149625A1
公开(公告)日：2011-06-23
申请号：US13037888
申请日：2011-03-01
申请人： Katsunori AZUMA , Masamitsu Inaba , Mutsuhiro Mori , Kenichiro Nakajima
发明人： Katsunori AZUMA , Masamitsu Inaba , Mutsuhiro Mori , Kenichiro Nakajima
IPC分类号： H02M1/14 , H05K7/20
CPC分类号： H01G4/38 , B60K1/02 , B60K6/28 , B60K6/48 , B60L3/003 , B60L11/005 , B60L11/123 , B60L11/14 , B60L15/007 , B60L2200/26 , B60L2240/525 , B60L2270/145 , B60W10/06 , B60W10/08 , B60W20/00 , H01G2/04 , H01G4/228 , H01G9/008 , H01G9/08 , H01G9/14 , H01G9/26 , H01L2224/48091 , H01L2224/49111 , H01L2924/00011 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H02M7/003 , Y02T10/6217 , Y02T10/6221 , Y02T10/6286 , Y02T10/645 , Y02T10/7022 , Y02T10/7077 , H01L2924/00014 , H01L2924/00 , H01L2924/01033
摘要： A capacitor module in which the structure of a connecting portion is highly resistant against vibration and has a low inductance. The capacitor module includes a plurality of capacitors and a laminate made up of a first wide conductor and a second wide conductor joined in a layered form with an insulation sheet interposed between the first and second wide conductors. The laminate comprises a first flat portion including the plurality of capacitors which are supported thereon and electrically connected thereto, a second flat portion continuously extending from the first flat portion while being bent, and connecting portions formed at ends of the first flat portion and the second flat portion and electrically connected to the exterior.
摘要翻译：一种电容器模块，其中连接部分的结构高度抵抗振动并具有低电感。电容器模块包括多个电容器和由第一宽导体和第二宽导体组成的层叠体，第一宽导体和第二宽导体以分层形式连接，绝缘片置于第一和第二宽导体之间。层叠体包括：第一平坦部，其包括被支撑在其上并电连接的多个电容器;第二平坦部，其在弯曲的同时从第一平坦部连续地延伸;以及连接部，形成在第一平坦部和第二平坦部的端部平坦部分并且电连接到外部。

23. 发明申请

US20110133718A1 Semiconductor Device and Power Conversion Apparatus Using the same 有权
标题翻译：半导体装置及其电力转换装置
公开(公告)号：US20110133718A1
公开(公告)日：2011-06-09
申请号：US12958894
申请日：2010-12-02
申请人： So WATANABE , Mutsuhiro Mori , Taiga Arai
发明人： So WATANABE , Mutsuhiro Mori , Taiga Arai
IPC分类号： G05F3/02 , H01L29/739
CPC分类号： H01L29/7395 , H01L21/2815 , H01L29/0607 , H01L29/0611 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/0646 , H01L29/0657 , H01L29/0847 , H01L29/1095 , H01L29/404 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/4236 , H01L29/42376 , H01L29/66348 , H01L29/7397
摘要： A semiconductor device provides a gate electrode formed on a lateral face of a wide trench, and thereby the gate electrode is covered by a gate insulating layer and a thick insulating layer to be an inter layer. Therefore, a parasitic capacitance of the gate becomes small, and there is no potential variation of the gate since there is no floating p-layer so that a controllability of the dv/dt can be improved. In addition, the conductive layer between the gate electrodes can relax the electric field applied to the corner of the gate electrode. In consequence, compatibility of low loss and low noise and high reliability can be achieved.
摘要翻译：半导体器件提供形成在宽沟槽的侧面上的栅电极，由此栅电极被栅绝缘层和厚绝缘层覆盖为内层。因此，栅极的寄生电容变小，并且由于不存在浮置p层而不具有栅极的电位变化，因此能够提高dv / dt的可控性。此外，栅电极之间的导电层可以放宽施加到栅电极的角部的电场。因此，可以实现低损耗和低噪声以及高可靠性的兼容性。

24. 发明申请

US20110051371A1 Semiconductor Device, and Power Conversion Device Using Semiconductor Device 有权
标题翻译：半导体器件和使用半导体器件的功率转换器件
公开(公告)号：US20110051371A1
公开(公告)日：2011-03-03
申请号：US12920287
申请日：2009-07-30
申请人： Katsunori Azuma , Mutsuhiro Mori , Kinya Nakatsu , Seiichi Hayakawa , Fusanori Nishikimi
发明人： Katsunori Azuma , Mutsuhiro Mori , Kinya Nakatsu , Seiichi Hayakawa , Fusanori Nishikimi
IPC分类号： H05K1/11 , H05K7/20
CPC分类号： B60W20/00 , B60K1/02 , B60K6/445 , B60L2200/26 , B60L2240/423 , B60W10/06 , B60W10/08 , B60W2710/0644 , B60W2710/0666 , B60W2710/083 , H01L23/3735 , H01L23/473 , H01L23/49811 , H01L23/50 , H01L24/48 , H01L24/49 , H01L25/072 , H01L2224/05599 , H01L2224/451 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48472 , H01L2224/49111 , H01L2224/85399 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01031 , H01L2924/01033 , H01L2924/01042 , H01L2924/0105 , H01L2924/01052 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/15787 , H01L2924/181 , H01L2924/19041 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/351 , H02M7/003 , H05K7/20927 , Y02T10/6239 , Y02T10/6269 , Y02T10/6286 , Y02T10/642 , H01L2924/00 , H01L2224/45015 , H01L2924/207 , H01L2224/45099
摘要： The present invention provides a vehicle power module and a power converter including a power semiconductor element (328), a plurality of connecting conductors (371U, 372U, 373U) for transmitting current to the power semiconductor element (328), and a metallic base (304) upon which the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted; and the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, and 373U) are mounted upon the metallic base (304) so as to form a looped current path. Desirably, the power semiconductor element (328) and the plurality of connecting conductors (371U, 372U, 373U) are arranged so as to form two or more looped current paths.
摘要翻译：本发明提供了一种车辆用电源模块和功率转换器，包括功率半导体元件（328），用于向电力半导体元件（328）传输电流的多个连接导体（371U，372U，373U）和金属基座 304），其上安装有功率半导体元件（328）和多个连接导体（371U，372U和373U）; 功率半导体元件（328）和多个连接导体（371U，372U，373U）安装在金属基座（304）上，形成环路电流路径。期望地，功率半导体元件（328）和多个连接导体（371U，372U，373U）被布置成形成两个或更多个环路电流路径。

25. 发明授权

US07851866B2 Electric power conversion device 有权
标题翻译：电力转换装置
公开(公告)号：US07851866B2
公开(公告)日：2010-12-14
申请号：US11338668
申请日：2006-01-25
申请人： Naoki Sakurai , Mutsuhiro Mori
发明人： Naoki Sakurai , Mutsuhiro Mori
IPC分类号： H01L23/58
CPC分类号： H03K17/0828 , H01L2924/0002 , H03K2017/0806 , H01L2924/00
摘要： An object of the present invention is to provide an electric power converter including means for accurately detecting a principal current of IGBT. An electric power conversion device according to the present invention includes principal current estimation means for estimating a principal current by using: an output of temperature measuring means whose diode is disposed in the same semiconductor substrate as an IGBT including an emitter having flowing therethrough the principal current and a sense emitter having flowing therethrough a sense current proportional to the principal current; the sense current; and the information, preliminarily stored in memory means, on the relationship among the semiconductor substrate temperature, the principal current and the sense currant.
摘要翻译：本发明的目的是提供一种电力转换器，其包括用于精确地检测IGBT的主电流的装置。根据本发明的电力转换装置包括：主电流估计装置，用于通过使用以下方式估计主电流的温度测量装置的输出：其二极管设置在与包括流过其中的主电流的IGBT的IGBT相同的半导体衬底中以及感测发射器，其通过与主电流成比例的感测电流流动; 感应电流; 以及预先存储在存储装置中的信息，关于半导体衬底温度，主电流和感应浓度范围之间的关系。

26. 发明授权

US07638839B2 Power semiconductor device and power conversion device using the same 失效
标题翻译：功率半导体器件和使用其的功率转换器件
公开(公告)号：US07638839B2
公开(公告)日：2009-12-29
申请号：US11684044
申请日：2007-03-09
申请人： Taiga Arai , Mutsuhiro Mori
发明人： Taiga Arai , Mutsuhiro Mori
IPC分类号： H01L29/739
CPC分类号： H01L29/7397 , H01L29/4236
摘要： A power semiconductor device having a low loss and a high reliability and a power conversion device using the power semiconductor device are provided. In the power semiconductor device, a plurality of MOS type trench gates are positioned to be spaced by at-least two types of intervals therebetween, a low-resistance floating n+ layer is positioned on a main surface of a semiconductor substrate adjacent to a floating p layer positioned between the adjacent MOS type trench gates having the broad interval to achieve consistency between a low output value and a high breakdown resistance.
摘要翻译：提供了具有低损耗和高可靠性的功率半导体器件和使用该功率半导体器件的功率转换器件。在功率半导体器件中，多个MOS型沟槽栅极被定位成间隔其间至少两种间隔，低电阻浮动n +层位于半导体衬底的与浮动p相邻的主表面上层位于具有宽间隔的相邻MOS型沟槽栅极之间，以实现低输出值和高耐击穿电阻之间的一致性。

27. 发明申请

US20090294847A1 Plasma Display Apparatus 审中-公开
标题翻译：等离子显示装置
公开(公告)号：US20090294847A1
公开(公告)日：2009-12-03
申请号：US12535929
申请日：2009-08-05
申请人： Mutsuhiro Mori
发明人： Mutsuhiro Mori
IPC分类号： H01L29/739
CPC分类号： G09G3/2965 , G09G2330/021 , G09G2330/028 , H01L29/0619 , H01L29/7395 , H01L2924/0002 , H02M7/487 , H01L2924/00
摘要： A plasma display apparatus which in its driving circuit mounts at least one of IGBTs having diodes built-in which are reverse conducting in a driving device which supplies a light emitting current and IGBTs having diodes built-in which have a reverse blocking function in a driving device which collects and charges the power.
摘要翻译：一种等离子体显示装置，其驱动电路中安装有在驱动装置内部具有反向导通的二极管的IGBT中的至少一个，其具有在驱动中具有反向阻断功能的内置二极管的IGBT 收集和收取电力的设备。

28. 发明授权

US07541858B2 Integration circuit, decrement circuit, and semiconductor devices 有权
标题翻译：集成电路，减量电路和半导体器件
公开(公告)号：US07541858B2
公开(公告)日：2009-06-02
申请号：US11187862
申请日：2005-07-25
申请人： Seigou Yukutake , Mutsuhiro Mori , Yasuhiko Kohno
发明人： Seigou Yukutake , Mutsuhiro Mori , Yasuhiko Kohno
IPC分类号： G06G7/18 , G06F7/64
CPC分类号： F02P3/0552
摘要： An ignitor comprising a circuit with a millisecond order time constant and with a minimum circuit size and area, which is capable of self-shutdown without leading to erroneous ignition upon detection of an abnormality. An ignitor 1 capable of self-shutdown upon detection of an abnormality comprises an abnormality detection circuit 12 whose rise output is applied to the gate of a self-shutdown MOSFET 33 via an integration circuit 33 comprised of a diode 8 and a capacitor 9. The gate voltage of IGBT 5a, which is a main-current switching device, can be decremented.
摘要翻译：包括具有毫秒级时间常数且具有最小电路尺寸和面积的电路的点火器，其能够在检测到异常时自动关闭而不导致错误点火。能够在检测到异常时能够自我关机的点火器1包括：异常检测电路12，其上升输出经由由二极管8和电容器9组成的积分电路33施加到自停闭MOSFET 33的栅极。作为主电流开关器件的IGBT 5a的栅极电压可以减小。

29. 发明申请

US20060022609A1 Integration circuit, decrement circuit, and semiconductor devices 有权
标题翻译：集成电路，减量电路和半导体器件
公开(公告)号：US20060022609A1
公开(公告)日：2006-02-02
申请号：US11187862
申请日：2005-07-25
申请人： Seigou Yukutake , Mutsuhiro Mori , Yasuhiko Kohno
发明人： Seigou Yukutake , Mutsuhiro Mori , Yasuhiko Kohno
IPC分类号： F02P15/00 , F02P3/04
CPC分类号： F02P3/0552
摘要： An ignitor comprising a circuit with a millisecond order time constant and with a minimum circuit size and area, which is capable of self-shutdown without leading to erroneous ignition upon detection of an abnormality. An ignitor 1 capable of self-shutdown upon detection of an abnormality comprises an abnormality detection circuit 12 whose rise output is applied to the gate of a self-shutdown MOSFET 33 via an integration circuit 33 comprised of a diode 8 and a capacitor 9. The gate voltage of IGBT 5a, which is a main-current switching device, can be decremented.
摘要翻译：包括具有毫秒级时间常数且具有最小电路尺寸和面积的电路的点火器，其能够在检测到异常时自动关闭而不导致错误点火。能够在检测到异常时能够自我关机的点火器1包括：异常检测电路12，其上升输出经由由二极管8和电容器9组成的积分电路33施加到自停闭MOSFET 33的栅极。作为主电流开关器件的IGBT5a的栅极电压可以减小。

30. 发明授权

US06539928B2 Vehicle-mounted ignitor 失效
公开(公告)号：US06539928B2
公开(公告)日：2003-04-01
申请号：US09790544
申请日：2001-02-23
申请人： Yasuhiko Kohno , Junpei Uruno , Mutsuhiro Mori
发明人： Yasuhiko Kohno , Junpei Uruno , Mutsuhiro Mori
IPC分类号： F02P300
CPC分类号： F02P3/04 , F02P3/0552
摘要： A circuit for supplying an oscillation suppress current is provided between a collector terminal and gate electrode of a main IGBT. The current supply circuit comprises a resistor and a diode which are connected in series. A bypass MOSFET is connected between the series connection and the emitter terminal. No semiconductor element having different temperature characteristics is provided in the current supply circuit.

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