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21. 发明授权

US09299824B2 Field effect transistor 有权
标题翻译：场效应晶体管
公开(公告)号：US09299824B2
公开(公告)日：2016-03-29
申请号：US14209024
申请日：2014-03-13
申请人： EPISTAR CORPORATION , HUGA OPTOTECH INC.
发明人： Heng-Kuang Lin , Chien-Kai Tung
IPC分类号： H01L31/072 , H01L29/778 , H01L29/20
CPC分类号： H01L29/7785 , H01L29/2003 , H01L29/205 , H01L29/22 , H01L29/267 , H01L29/7783 , H01L29/7787
摘要： A FET disclosed herein comprises a substrate, a first semiconductor layer disposed over the substrate, a second semiconductor layer disposed over the first semiconductor layer, wherein an interface between the first semiconductor layer and the second semiconductor layer has a two-dimensional electron gas. The E-mode FET further comprises a p+ III-V semiconductor layer disposed over the second semiconductor layer and a depolarization layer disposed between the second semiconductor layer and the p+ III-V semiconductor layer.
摘要翻译：本文公开的FET包括衬底，设置在衬底上的第一半导体层，设置在第一半导体层上的第二半导体层，其中第一半导体层和第二半导体层之间的界面具有二维电子气。 E型FET还包括设置在第二半导体层上的p + III-V半导体层和设置在第二半导体层和p + III-V半导体层之间的去极化层。

22. 发明授权

US09231171B2 Flexible LED assemblies and LED light bulbs 有权
标题翻译：柔性LED组件和LED灯泡
公开(公告)号：US09231171B2
公开(公告)日：2016-01-05
申请号：US14480084
申请日：2014-09-08
申请人： HUGA OPTOTECH INC. , INTERLIGHT OPTOTECH CORPORATION
发明人： Hong-Zhi Liu , Tzu-Chi Cheng
IPC分类号： H01L33/62 , H01L33/50 , F21K99/00 , H01L25/075 , F21V3/00 , F21Y101/02
CPC分类号： H01L33/504 , F21K9/232 , F21V3/00 , F21Y2115/10 , H01L25/0753 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： LED assemblies and related LED light bulbs. An LED assembly has a flexible, transparent substrate, an LED chip on the first surface and electrically connected to two adjacent conductive sections, a first wavelength conversion layer, formed on the first surface to substantially cover the LED chip, and a second wavelength conversion layer formed on the second surface. The flexible, transparent substrate has first and second surfaces opposite to each other, and several conductive sections, which are separately formed on the first surface.
摘要翻译： LED组件及相关LED灯泡。 LED组件具有柔性的透明基板，第一表面上的LED芯片，并且电连接到两个相邻的导电部分，形成在第一表面上以基本上覆盖LED芯片的第一波长转换层，以及第二波长转换层形成在第二表面上。柔性透明基板具有彼此相对的第一和第二表面，以及在第一表面上分开形成的若干导电部分。

23. 发明申请

US20140167096A1 LIGHT EMITTING DEVICE AND METHODS FOR FORMING THE SAME 有权
标题翻译：发光装置及其形成方法
公开(公告)号：US20140167096A1
公开(公告)日：2014-06-19
申请号：US14188499
申请日：2014-02-24
申请人： HUGA OPTOTECH INC.
发明人： Tzong-Liang TSAI , Yu-Chu LI , Chiung-Chi TSAI
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting device, which comprises an epitaxial stack structure, a II/V group compound contact layer directly formed on the epitaxial stack structure, a protrusion or recess type structure directly formed on the II/V group compound contact layer, and a conductive layer covering the protrusion or recess type structure.
摘要翻译：本发明提供一种发光器件，其包括外延层叠结构，直接形成在外延层叠结构上的II / V族化合物接触层，直接形成在II / V族化合物接触层上的突起或凹陷型结构，以及覆盖突起或凹陷型结构的导电层。

24. 发明申请

US20130313597A1 SEMICONDUCTOR LIGHT-EMITTING DEVICES 有权
标题翻译：半导体发光器件
公开(公告)号：US20130313597A1
公开(公告)日：2013-11-28
申请号：US13933102
申请日：2013-07-01
申请人： Huga Optotech Inc.
发明人： JING JIE DAI , YEN CHIEH HUANG , SHU YING YANG
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device includes a substrate having an upper surface and a plurality of bumps positioned on the upper surface in a periodic manner, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The first conductive type semiconductor layer includes a plurality of protrusions each facing a portion of the substrate between the bumps, the protrusions are positioned in a ring manner at a peripheral region of the first conductive type semiconductor layer, and the protrusions are spaced apart from the bumps.
摘要翻译：半导体发光器件包括具有上表面和周期性地位于上表面上的多个凸起的衬底，位于衬底上的第一导电类型半导体层，位于第一导电类型上的发光结构半导体层和位于发光结构上的第二导电型半导体层。第一导电型半导体层包括多个突起，每个突起各自面对基板的凸起部分之间，突起以环形方式定位在第一导电类型半导体层的周边区域，并且突起与颠簸

25. 发明授权

US08237184B2 Light-emitting semiconductor device 有权
标题翻译：发光半导体器件
公开(公告)号：US08237184B2
公开(公告)日：2012-08-07
申请号：US13071511
申请日：2011-03-25
申请人： Shiou-Yi Kuo
发明人： Shiou-Yi Kuo
IPC分类号： H01L33/00 , H01J63/04
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/32 , H01L33/405 , H01L33/42
摘要： A semiconductor light-emitting device includes a conductive substrate, a light-emitting structure layer, a metallic reflective layer, a transparent conductive layer, a first patterned dielectric layer, and a second patterned dielectric layer. The light-emitting structure layer, the transparent conductive layer, the metallic reflective layer, and the conductive substrate are sequentially arranged. The first patterned dielectric layer is between the light-emitting structure layer and the transparent conductive layer and includes first structure units separated from one another by a first space. The first portions are located in the first spaces respectively. The second patterned dielectric layer is between the transparent conductive layer and the metallic reflective layer and includes second structure units separated from one another by a second space. The second portions are located in the second spaces respectively. The first and the second portions are not overlapped.
摘要翻译：半导体发光器件包括导电衬底，发光结构层，金属反射层，透明导电层，第一图案化电介质层和第二图案化电介质层。依次排列发光结构层，透明导电层，金属反射层，导电性基板。第一图案化电介质层在发光结构层和透明导电层之间，并且包括通过第一空间彼此分离的第一结构单元。第一部分分别位于第一空间中。第二图案化电介质层位于透明导电层和金属反射层之间，并且包括通过第二空间彼此分离的第二结构单元。第二部分分别位于第二空间中。第一和第二部分不重叠。

26. 发明授权

US08143081B2 Method for dicing a diced optoelectronic semiconductor wafer 有权
标题翻译：用于切割切割的光电半导体晶片的方法
公开(公告)号：US08143081B2
公开(公告)日：2012-03-27
申请号：US11706822
申请日：2007-02-13
申请人： Chih-Ching Cheng , Chiung-Chi Tsai
发明人： Chih-Ching Cheng , Chiung-Chi Tsai
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , H01L33/20 , Y10T83/0304
摘要： A method for dicing an optoelectronic semiconductor wafer has steps of preparing an optoelectronic semiconductor wafer, laser scribing, diamond saw dicing and forming optoelectronic semiconductor dies. A product for dicing an optoelectronic semiconductor wafer has a substrate and an epitaxial layer. The substrate has a first surface, a second surface and two rough surfaces. The rough surfaces are formed by laser scribing the wafer to define multiple guide grooves on the wafer and diamond saw grooving the wafer along the guide grooves. The epitaxial layer is formed epitaxially on the first surface of the substrate.
摘要翻译：用于切割光电半导体晶片的方法具有制备光电子半导体晶片，激光划线，金刚石锯切割和形成光电子半导体管芯的步骤。用于切割光电半导体晶片的产品具有基板和外延层。基板具有第一表面，第二表面和两个粗糙表面。粗糙表面通过激光划片晶片形成，以在晶片上限定多个引导槽，并且金刚石锯沿着引导槽切割晶片。在衬底的第一表面上外延地形成外延层。

27. 发明授权

US07915605B2 LED packaged structure and applications of LED as light source 有权
标题翻译： LED封装结构和应用LED作为光源
公开(公告)号：US07915605B2
公开(公告)日：2011-03-29
申请号：US11984730
申请日：2007-11-21
申请人： Tzong-Liang Tsai , Chih-Ching Cheng
发明人： Tzong-Liang Tsai , Chih-Ching Cheng
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , F21K9/27 , F21Y2103/10 , F21Y2115/10 , H01L33/06
摘要： LED packaged structures and applications thereof are disclosed, characterized in that: an active layer in the LED or the LED packaged structure is formed on a first semiconductor conductive layer with multi-quantum wells; and a second semiconductor conductive layer is formed on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven multi-quantum well.
摘要翻译：公开了LED封装结构及其应用，其特征在于：在具有多量子阱的第一半导体导电层上形成LED或LED封装结构中的有源层; 并且在所述有源层上形成第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和有源层之间被散射，以形成不均匀的多量子阱。

28. 发明申请

US20110001147A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110001147A1
公开(公告)日：2011-01-06
申请号：US12856221
申请日：2010-08-13
申请人： Chih CHING Cheng , Tzong Liang Tsai , Shu Hui Lin
发明人： Chih CHING Cheng , Tzong Liang Tsai , Shu Hui Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.
摘要翻译：半导体发光器件包括衬底，位于衬底上的第一导电类型半导体层，位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。基板包括上表面和位于上表面上的多个突起。每个突起包括顶表面，多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

29. 发明授权

US07821017B2 Light-emitting diode and method for fabricating the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07821017B2
公开(公告)日：2010-10-26
申请号：US12426471
申请日：2009-04-20
申请人： Chi-Shen Lee , Su-Hui Lin
发明人： Chi-Shen Lee , Su-Hui Lin
IPC分类号： H01L29/167
CPC分类号： H01L33/007 , H01L33/20 , H01L33/38 , H01L33/44
摘要： The invention discloses a method for fabricating a light-emitting diode. In an embodiment of the invention, the method comprises the following steps of (a) preparing a substrate; (b) forming an epitaxial layer on the substrate, wherein the epitaxial layer has an upper surface; (c) forming a mask layer on a first region of the upper surface of the epitaxial layer; (d) forming a semiconductor multi-layer structure on a second region of the upper surface of the epitaxial layer, wherein the second region is distinct from the first region; (e) removing the mask layer formed on the first region of the upper surface of the epitaxial layer; and (f) forming an electrode on the first region of the upper surface of the epitaxial layer.
摘要翻译：本发明公开了一种制造发光二极管的方法。在本发明的一个实施方案中，该方法包括以下步骤：（a）制备底物; （b）在所述衬底上形成外延层，其中所述外延层具有上表面; （c）在所述外延层的上表面的第一区域上形成掩模层; （d）在所述外延层的上表面的第二区域上形成半导体多层结构，其中所述第二区域与所述第一区域不同; （e）去除形成在外延层的上表面的第一区域上的掩模层; 和（f）在外延层的上表面的第一区域上形成电极。

30. 发明授权

US07804104B2 Light-emitting diode with high lighting efficiency 有权
标题翻译：发光二极管具有高照明效率
公开(公告)号：US07804104B2
公开(公告)日：2010-09-28
申请号：US12421869
申请日：2009-04-10
申请人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L27/15
CPC分类号： H01L33/46 , H01L33/387 , H01L2933/0083
摘要： The invention discloses a light-emitting diode, including a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a light-emitting layer and plural laminated structures. The first conductive type semiconductor layer, the light-emitting layer and the second conductive type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the upper surface of the second conductive type semiconductor layer such that the upper surface is partially exposed. Each laminated structure consists of at least one first insulated layer with a high refractive index and at least one second insulated layer with a low refractive index, where the at least one first insulated layer and the at least one second insulated layer are alternately formed to obtain said each laminated structure. Thereby, light emitted from the light-emitting layer can be reflected by the laminated structures to enhance the light-extraction efficiency.
摘要翻译：本发明公开了一种发光二极管，包括基板，第一导电型半导体层，第二导电型半导体层，发光层和多层叠结构。依次在基板上形成第一导电型半导体层，发光层和第二导电型半导体层。在第二导电型半导体层的上表面上形成多个叠层结构，使得上表面部分露出。每个层压结构由至少一个具有高折射率的第一绝缘层和至少一个具有低折射率的第二绝缘层组成，其中至少一个第一绝缘层和至少一个第二绝缘层交替地形成以获得说每个层压结构。由此，从发光层发出的光可以被叠层结构反射，以提高光提取效率。

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