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41. 发明授权

US08395212B2 Semiconductor architecture having field-effect transistors especially suitable for analog applications 有权
标题翻译：具有特别适用于模拟应用的场效应晶体管的半导体架构
公开(公告)号：US08395212B2
公开(公告)日：2013-03-12
申请号：US13177552
申请日：2011-07-06
申请人： Constantin Bulucea
发明人： Constantin Bulucea
IPC分类号： H01L27/088
CPC分类号： H01L21/823892 , H01L21/823807 , H01L21/823878 , H01L27/1203 , H01L29/1045 , H01L29/665 , H01L29/66659 , H01L29/7835
摘要： An insulated-gate field-effect transistor (100, 100V, 140, 150, 150V, 160, 170, 170V, 180, 180V, 190, 210, 210W, 220, 220U, 220V, 220W, 380, or 480) has a hypoabrupt vertical dopant profile below one (104 or 264) of its source/drain zones for reducing the parasitic capacitance along the pn junction between that source/drain zone and adjoining body material (108 or 268). In particular, the concentration of semiconductor dopant which defines the conductivity type of the body material increases by at least a factor of 10 in moving from that source/drain zone down to an underlying body-material location no more than 10 times deeper below the upper semiconductor surface than that source/drain zone. The body material preferably includes a more heavily doped pocket portion (120 or 280) situated along the other source/drain zone (102 or 262). The combination of the hypoabrupt vertical dopant profile below the first-mentioned source/drain zone, normally serving as the drain, and the pocket portion along the second-mentioned source/drain zone, normally serving as the source, enables the resultant asymmetric transistor to be especially suitable for high-speed analog applications.
摘要翻译：绝缘栅场效应晶体管（100,100V，140,150,150V，160,170,170V，180,180V，190,210,210W，220,220U，220V，220W，380或480）具有低于其源极/漏极区（104或264）的垂直掺杂剂分布，用于减小源极/漏极区与邻接体材料（108或268）之间的pn结的寄生电容。特别地，限定主体材料的导电类型的半导体掺杂剂的浓度在从该源极/漏极区向下移动到下面的主体材料位置时不小于10倍深度的上方增加至少10倍半导体表面比该源/漏区。主体材料优选地包括沿着另一个源极/漏极区（102或262）设置的更重掺杂的凹穴部分（120或280）。通常用作漏极的第一提及的源极/漏极区下方的低破坏垂直掺杂物分布以及通常用作源的第二次提供的源极/漏极区的凹穴部分的组合使得所得的不对称晶体管能够特别适用于高速模拟应用。

42. 发明授权

US08390093B1 System and method of galvanic isolation in digital signal transfer integrated circuits utilizing conductivity modulation of semiconductor substrate 有权
标题翻译：利用半导体衬底的电导率调制的数字信号传输集成电路中的电流隔离的系统和方法
公开(公告)号：US08390093B1
公开(公告)日：2013-03-05
申请号：US13230171
申请日：2011-09-12
申请人： Peter J. Hopper , Peter Smeys , William French , Andrei Papou , Aditi Dutt Chaudhuri
发明人： Peter J. Hopper , Peter Smeys , William French , Andrei Papou , Aditi Dutt Chaudhuri
IPC分类号： H01L21/70 , H01L21/00 , H04B1/44
CPC分类号： H01L23/5227 , H01L2924/0002 , H01L2924/00
摘要： A galvanic isolation system provides galvanic isolation in digital transfer integrated circuits by using conductivity modulation of the semiconductor substrate. Modulation of the conductivity of the substrate affects eddy current losses of a (differential) RF inductor that is isolated from the substrate by a sufficient amount of dielectric material, which provides a basis for signal transfer from the modulated substrate to the inductor across the isolation barrier.
摘要翻译：电隔离系统通过使用半导体衬底的电导率调制在数字传输集成电路中提供电隔离。衬底的导电性的调制影响了通过足够量的电介质材料与衬底隔离的（差分）RF电感器的涡电流损耗，这提供了通过隔离屏障从调制衬底到电感器的信号传递的基础。

43. 发明申请

US20130043828A1 BATTERY CHARGER ARCHITECTURE 有权
标题翻译：电池充电架构
公开(公告)号：US20130043828A1
公开(公告)日：2013-02-21
申请号：US13211973
申请日：2011-08-17
申请人： SANJAY GURLAHOSUR
发明人： SANJAY GURLAHOSUR
IPC分类号： H02J7/00
CPC分类号： H02J7/0081 , H02J7/0083 , H02J7/0091 , H02M3/1588 , Y02B40/90 , Y02B70/1466
摘要： A control circuit for use in a battery charger circuit that includes a switching voltage regulator, with the control circuit having a constant current charging mode and a constant voltage charging mode. A switcher controller is provided which configured to control a state of a top side switching transistor and a low side transistor of the switching voltage regulator in response to at least one error signal. A power path transistor switch is disposed intermediate an output of the switching voltage regulator and a first node for receiving a first terminal of a battery to be charged. Feedback circuitry is further provided to produce a first error signal relating to a difference between a first voltage and a first target voltage, with the first voltage being between the output of the switching voltage regulator and a second node for receiving a second terminal of the battery to be charged, with the first error signal being used by the switcher controller when the control circuit is in the constant voltage charging mode for controlling the top and low side switching transistors.
摘要翻译：一种用于包括开关电压调节器的电池充电器电路中的控制电路，其中控制电路具有恒定电流充电模式和恒定电压充电模式。提供一种切换器控制器，其配置为响应于至少一个误差信号来控制开关电压调节器的顶侧开关晶体管和低侧晶体管的状态。电源通道晶体管开关设置在开关电压调节器的输出端和用于接收要充电的电池的第一端子的第一节点之间。还提供反馈电路以产生与第一电压和第一目标电压之间的差有关的第一误差信号，其中第一电压位于开关电压调节器的输出端和用于接收电池的第二端子的第二节点之间当控制电路处于用于控制顶侧和底侧开关晶体管的恒压充电模式时，由开关控制器使用第一误差信号来充电。

44. 发明授权

US08377768B2 Structure and fabrication of like-polarity field-effect transistors having different configurations of source/drain extensions, halo pockets, and gate dielectric thicknesses 有权
标题翻译：具有不同构造的源极/漏极延伸部分，晕圈和栅介质厚度的类似极性场效应晶体管的结构和制造
公开(公告)号：US08377768B2
公开(公告)日：2013-02-19
申请号：US13293096
申请日：2011-11-09
申请人： Constantin Bulucea , William D. French , Donald M. Archer , Jeng-Jiun Yang , Sandeep R. Bahl , D. Courtney Parker
发明人： Constantin Bulucea , William D. French , Donald M. Archer , Jeng-Jiun Yang , Sandeep R. Bahl , D. Courtney Parker
IPC分类号： H01L21/8238
CPC分类号： H01L29/1083 , H01L21/26513 , H01L21/2652 , H01L21/26586 , H01L21/823412 , H01L21/823418 , H01L21/823807 , H01L21/823814 , H01L21/823892 , H01L27/088 , H01L27/0922 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/105 , H01L29/518 , H01L29/66659 , H01L29/7835
摘要： A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.
摘要翻译：一组高性能类似极性的绝缘栅场效应晶体管（100,108,112,116,120和124或102,110,114,118,122和126）具有可选择地不同的侧向源 /漏极延伸，光晕口和栅介质厚度，适用于为模拟和/或数字应用提供各种晶体管的半导体制造平台。每个晶体管具有一对源极/漏极区，栅极介电层和栅电极。每个源极/漏极区域包括主要部分和更轻掺杂的横向延伸部分。一个晶体管的一个源极/漏极区域的横向延伸比另一个晶体管的源极/漏极区域之一的横向延伸更深地掺杂或/并且在上部半导体表面之下更深地延伸。

45. 发明授权

US08363846B1 Frequency domain signal processor for close talking differential microphone array 有权
标题翻译：频域信号处理器用于近距离差分麦克风阵列
公开(公告)号：US08363846B1
公开(公告)日：2013-01-29
申请号：US11684076
申请日：2007-03-09
申请人： Yunhong Li , Lin Sun , Wei Ma
发明人： Yunhong Li , Lin Sun , Wei Ma
IPC分类号： H04R3/00
CPC分类号： G10K11/178 , H04M1/6008
摘要： A system and method for processing close talking differential microphone array (CTDMA) signals in which incoming microphone signals are transformed from time domain signals to frequency domain signals having separable magnitude and phase information. Processing of the frequency domain signals is performed using the magnitude information, following which phase information is reintroduced using phase information of one of the original frequency domain signals. As a result, high pass filtering effects of conventional differential signal processing of CTDMA signals are substantially avoided.
摘要翻译：用于处理紧密通话的差分麦克风阵列（CTDMA）信号的系统和方法，其中输入的麦克风信号从时域信号变换到具有可分离的幅度和相位信息的频域信号。使用幅度信息来执行频域信号的处理，随后使用原始频域信号之一的相位信息重新引入相位信息。结果，实质上避免了CTDMA信号的常规差分信号处理的高通滤波效应。

46. 发明申请

US20130021186A1 CIRCUITRY AND METHOD FOR DIGITAL TO ANALOG CURRENT SIGNAL CONVERSION WITH PHASE INTERPOLATION 有权
标题翻译：用于数字模拟电流信号转换的相位插值的电路和方法
公开(公告)号：US20130021186A1
公开(公告)日：2013-01-24
申请号：US13187674
申请日：2011-07-21
申请人： Arlo J. Aude , Steven E. Finn
发明人： Arlo J. Aude , Steven E. Finn
IPC分类号： H03M1/66 , G06F17/50
CPC分类号： H03M1/747
摘要： Circuitry and method for digital-to-analog current signal conversion with phase interpolation. For an n-bit digital-to-analog converter (DAC), the number 2n control bits normally required can be reduced to 2(n-1) by jointly controlling pairs of the current sources with one of the 2(n-1) current control bits and inverses of two other ones of the 2(n-1) current control bits.
摘要翻译：具有相位插值的数模转换电流信号转换的电路和方法。对于n位数模转换器（DAC），通过使用2（n-1）中的一个共同控制电流源对，通常需要的2n个控制位可以减少到2（n-1） 2（n-1）个电流控制位中的另外两个的当前控制位和反相。

47. 发明申请

US20130015820A1 SYSTEM AND METHOD FOR BALANCING ELECTRICAL ENERGY STORAGE DEVICES VIA DIFFERENTIAL POWER BUS AND CAPACITIVE LOAD SWITCHED-MODE POWER SUPPLY 有权
标题翻译：通过差分电源总线和电容负载切换模式电源平衡电力储存装置的系统和方法
公开(公告)号：US20130015820A1
公开(公告)日：2013-01-17
申请号：US13180963
申请日：2011-07-12
申请人： Jang Dae Kim
发明人： Jang Dae Kim
IPC分类号： H02J7/00
CPC分类号： H02J7/0019
摘要： System and method are provided for transferring electrical energy among multiple electrical energy storage devices via a differential power bus and a capacitive load switched-mode power supply. The switched-mode power supply transfers the electrical energy between the load capacitor and the differential power bus to which the electrical energy storage devices (e.g., rechargeable batteries and/or capacitors connected in parallel or series or combinations of both) are electrically connected via bus switches. As a result, electrical energy is efficiently transferred and distributed among the electrical energy storage devices.
摘要翻译：提供了用于经由差分电源总线和电容负载开关模式电源在多个电能存储装置之间传送电能的系统和方法。开关模式电源在负载电容器和差动电力总线之间传送电能，电能存储装置（例如，并联或并联或两者串联或并联的电容器）通过总线电连接到开关。结果，电能在电能存储装置之间被有效地转移和分配。

48. 再颁专利

USRE43922E1 Balanced cells with fabrication mismatches that produce a unique number generator 有权
标题翻译：具有制造不匹配的平衡单元，产生独特的数字发生器
公开(公告)号：USRE43922E1
公开(公告)日：2013-01-15
申请号：US13008770
申请日：2011-01-18
申请人： Elroy Lucero
发明人： Elroy Lucero
IPC分类号： H01L27/01 , H01L27/12 , H01L31/0392 , H01L27/11 , H01L29/76
CPC分类号： H01L27/1104 , H01L27/0207 , H01L27/11
摘要： A static random access memory (SRAM) is laid out to be balanced so that, when power is applied to the SRAM, the cells of the SRAM have no preferred logic state, In addition, the SRAM is fabricated in a process the emphasizes mismatches so that each individual cell assumes a non-random logic state when power is applied.
摘要翻译：静态随机存取存储器（SRAM）被布置为被平衡，使得当对SRAM施加电力时，SRAM的单元不具有优选的逻辑状态。另外，SRAM在一个过程中被制造成强调不匹配当施加电力时，每个单独的单元都呈现非随机逻辑状态。

49. 发明授权

US08350739B2 Reference current compensation circuit for D/A converter 有权
标题翻译： D / A转换器的参考电流补偿电路
公开(公告)号：US08350739B2
公开(公告)日：2013-01-08
申请号：US13072934
申请日：2011-03-28
申请人： James Scott Prater
发明人： James Scott Prater
IPC分类号： H03M1/10
CPC分类号： H03M1/1061 , H03M1/785 , H03M1/808
摘要： A D/A converter having reference node for receiving a reference voltage and together network having a network reference bus connected to the reference node by way of a first electrical connection. The converter network produces a series of reference outputs derived from the reference voltage in response to a digital input applied to the converter, with the converter network sinking a network reference current at the network reference bus which varies with the converter digital input. A reference current compensator circuit is included which provides a compensation current at the network reference bus having a magnitude which varies in response to at least a portion of the digital input, with the compensation current operating to reduce variations in current through the first electrical connection caused by changes in the digital input.
摘要翻译：具有用于接收参考电压的参考节点和具有通过第一电连接连接到参考节点的网络参考总线的网络的D / A转换器。转换器网络响应于施加到转换器的数字输入而产生从参考电压导出的一系列参考输出，转换器网络在网络参考总线处吸收网络参考电流，该参考电流随着转换器数字输入而变化。包括参考电流补偿器电路，其在网络参考总线处提供补偿电流，其具有响应于数字输入的至少一部分而变化的幅度，其中补偿电流工作以减少通过第一电连接引起的电流的变化通过数字输入的变化。

50. 发明授权

US08338913B2 Semiconductor inductor with a serpentine shaped conductive wire interlaced with a serpentine shaped ferromagnetic core 有权
标题翻译：具有蛇形导电线的半导体电感器与蛇形铁磁芯线交织
公开(公告)号：US08338913B2
公开(公告)日：2012-12-25
申请号：US12943391
申请日：2010-11-10
申请人： Peter Smeys , Andrei Papou , Peter J. Hopper
发明人： Peter Smeys , Andrei Papou , Peter J. Hopper
IPC分类号： H01L29/82
CPC分类号： H01L28/10 , H01L23/5227 , H01L23/645 , H01L2924/0002 , H01L2924/00
摘要： The inductance of an inductor is increased by forming a conductive wire to have a serpentine shape that weaves through a ferromagnetic core that has a number of segments that are connected together in a serpentine shape where each segment of the ferromagnetic core also has a number of sections that are connected together in a serpentine shape.
摘要翻译：电感器的电感通过形成导线而增加，其具有蛇形形状，该蛇形形状通过铁磁芯编织，所述铁磁芯具有以蛇形形式连接在一起的多个段，其中铁磁芯的每个段也具有多个部分它们以蛇形形状连接在一起。

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