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41. 发明申请

US20120329216A1 WET CHEMISTRY PROCESSES FOR FABRICATING A SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL MOBILITY 有权
标题翻译：用于制造具有增加的通道移动性的半导体器件的湿化学方法
公开(公告)号：US20120329216A1
公开(公告)日：2012-12-27
申请号：US13229266
申请日：2011-09-09
申请人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
发明人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
IPC分类号： H01L21/28 , H01L21/331 , H01L21/336
CPC分类号： H01L29/7802 , H01L21/02142 , H01L21/02164 , H01L21/02172 , H01L21/02175 , H01L21/022 , H01L21/02282 , H01L21/02288 , H01L21/02378 , H01L21/045 , H01L21/049 , H01L29/0619 , H01L29/1606 , H01L29/1608 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7395 , H01L29/78 , H01L29/7813
摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
摘要翻译：公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。栅极堆叠包括碱土金属。在一个实施方案中，碱土金属是钡（Ba）。在另一个实施方案中，碱土金属是锶（Sr）。碱土金属导致半导体器件的沟道迁移率的显着改善。

42. 发明申请

US20120280270A1 Field Effect Transistor Devices with Low Source Resistance 有权
标题翻译：具有低源电阻的场效应晶体管器件
公开(公告)号：US20120280270A1
公开(公告)日：2012-11-08
申请号：US13108440
申请日：2011-05-16
申请人： Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
发明人： Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
IPC分类号： H01L29/739 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/045 , H01L29/0696 , H01L29/1608 , H01L29/7395
摘要： A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.
摘要翻译：半导体器件包括具有第一导电类型的漂移层，漂移层中具有与第一导电类型相反的第二导电类型的阱区以及阱区中的源极区。源极区具有第一导电类型并且限定在井区域中的通道区域。源极区域包括与沟道区域相邻的横向源极区域和远离与沟道区域相对的横向源极区域延伸的多个源极接触区域。具有第二导电类型的体接触区域在多个源极接触区域中的至少两个之间并且与阱区域接触。源欧姆触点与源极接触区域和身体接触区域中的至少一个重叠。半导体器件的源极接触区域的最小尺寸由源极欧姆接触和至少一个源极接触区域之间的重叠区域限定。

43. 发明申请

US20110096403A1 Anti-glare optical module and method for manufacturing the same 审中-公开
标题翻译：防眩光模块及其制造方法
公开(公告)号：US20110096403A1
公开(公告)日：2011-04-28
申请号：US12588629
申请日：2009-10-22
申请人： Lin Cheng , Jen-Huai Chang , Jyh Horng Wang
发明人： Lin Cheng , Jen-Huai Chang , Jyh Horng Wang
IPC分类号： G02B27/00 , G02B1/12
CPC分类号： G02B1/118 , G02B1/12
摘要： An anti-glare optical module includes a substrate unit and a thin film unit. The thin film unit is disposed on the top surface of the substrate unit. The thin film unit has a base surface that has a height relative to the top surface of the substrate unit, the thin film unit has a plurality of convex structures, each convex structure has a curvature radius, the curvature radiuses of every two adjacent convex structures are different, a plurality of lower points each formed between every two convex structures and on the base surface, and each convex structure has an upper point. Therefore, the thin film unit has a good scattering effect for reflective light, can maintain the excellent transmittance and can reduce the flicker points by the convex structures, so that using the convex structures can prevent the eyes of the user from being effected by flicker points.
摘要翻译：防眩光模块包括基板单元和薄膜单元。薄膜单元设置在基板单元的顶表面上。薄膜单元具有相对于基板单元的顶表面的高度的基面，薄膜单元具有多个凸结构，每个凸结构具有曲率半径，每两个相邻的凸结构的曲率半径每个凸起结构之间和基底表面上形成多个下部点，并且每个凸起结构都具有上部点。因此，薄膜单元对反射光具有良好的散射效果，可以保持优异的透射率并且可以通过凸起结构来减少闪烁点，使得使用凸起结构可以防止用户的眼睛受到闪烁点的影响。

44. 发明申请

US20100305147A1 CHEMICALLY MODIFIED SMALL MOLECULES 有权
标题翻译：化学改性的小分子
公开(公告)号：US20100305147A1
公开(公告)日：2010-12-02
申请号：US12822935
申请日：2010-06-24
申请人： Michael D. Bentley , Tracey X. Viegas , Richard R. Goodin , Lin Cheng , Xuan Zhao
发明人： Michael D. Bentley , Tracey X. Viegas , Richard R. Goodin , Lin Cheng , Xuan Zhao
IPC分类号： A61K31/485 , C07D489/02 , A61P11/00 , A61P29/00 , A61P31/00 , A61P33/00 , A61P21/02 , A61P19/02 , A61P7/02 , A61P3/00 , A61P35/00
CPC分类号： C08G65/337 , A61K47/60 , C08G65/332 , C08G65/33317 , C08G65/33396 , C08L2203/02
摘要： The invention provides small molecule drugs that are chemically modified by covalent attachment of a water-soluble oligomer obtained from a monodisperse or bimodal water-soluble oligomer composition. A conjugate of the invention, when administered by any of a number of administration routes, exhibits a reduced biological membrane crossing rate as compared to the biological membrane crossing rate of the small molecule drug not attached to the water-soluble oligomer.
摘要翻译：本发明提供了通过共价连接由单分散或双峰水溶性低聚物组合物获得的水溶性低聚物进行化学修饰的小分子药物。当与多种施用途径中的任何一种施用时，本发明的缀合物与未附着于水溶性低聚物的小分子药物的生物膜交联率相比，显示出降低的生物膜交叉率。

45. 发明授权

US07786133B2 Chemically modified small molecules 有权
标题翻译：化学修饰的小分子
公开(公告)号：US07786133B2
公开(公告)日：2010-08-31
申请号：US11015196
申请日：2004-12-16
申请人： Michael D. Bentley , Tacey X. Viegas , Richard R. Goodin , Lin Cheng , Xuan Zhao
发明人： Michael D. Bentley , Tacey X. Viegas , Richard R. Goodin , Lin Cheng , Xuan Zhao
IPC分类号： A61K31/485 , C07D489/08
CPC分类号： C08G65/337 , A61K47/60 , C08G65/332 , C08G65/33317 , C08G65/33396 , C08L2203/02
摘要： The invention provides small molecule drugs that are chemically modified by covalent attachment of a water-soluble oligomer obtained from a monodisperse or bimodal water-soluble oligomer composition. A conjugate of the invention, when administered by any of a number of administration routes, exhibits a reduced biological membrane crossing rate as compared to the biological membrane crossing rate of the small molecule drug not attached to the water-soluble oligomer.
摘要翻译：本发明提供了通过共价连接由单分散或双峰水溶性低聚物组合物获得的水溶性低聚物进行化学修饰的小分子药物。当与多种施用途径中的任何一种施用时，本发明的缀合物与未附着于水溶性低聚物的小分子药物的生物膜交联率相比，显示出降低的生物膜交叉率。

46. 发明申请

US20100105715A1 POLYMER CONJUGATES OF OPIOID ANTAGONISTS 有权
标题翻译：聚合物对阿片类拮抗剂的结合
公开(公告)号：US20100105715A1
公开(公告)日：2010-04-29
申请号：US12574335
申请日：2009-10-06
申请人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
发明人： Michael David Bentley , Michael James Roberts , Xiaoming Shen , Lin Cheng
IPC分类号： A61K31/485 , A61P1/08 , A61P1/10
CPC分类号： A61K47/60
摘要： The invention provides polymer conjugates of opioid antagonists comprising a polymer, such as poly(ethylene glycol), covalently attached to an opioid antagonist. The linkage between the polymer and the opioid antagonist is preferably hydrolytically stable. The invention also includes a method of treating one or more side effects associated with the use of opioid analgesics, such as constipation, nausea, or pruritus, by administering a polymer conjugate of the invention.
摘要翻译：本发明提供了阿片样物质拮抗剂的聚合物缀合物，其包含与阿片样物质拮抗剂共价连接的聚合物，例如聚（乙二醇）。聚合物和阿片样物质拮抗剂之间的连接优选是水解稳定的。本发明还包括通过施用本发明的聚合物缀合物来治疗与使用阿片样镇痛药如便秘，恶心或瘙痒相关的一种或多种副作用的方法。

47. 发明申请

US20090221766A1 STEREOSELECTIVE REDUCTION OF A MORPHINONE 有权
标题翻译：选择性还原吗啡酮
公开(公告)号：US20090221766A1
公开(公告)日：2009-09-03
申请号：US12297632
申请日：2007-04-19
申请人： Lin Cheng , Michael D. Bentley
发明人： Lin Cheng , Michael D. Bentley
IPC分类号： C08G73/00 , C07D489/02
CPC分类号： C07D489/02 , Y02P20/55
摘要： A synthetic method is provided, wherein the method comprises stereoselectively reducing a ketone of a morphinone to form a reduced morphinone and optionally covalently attaching a water soluble polymer to the reduced morphinone.
摘要翻译：提供了一种合成方法，其中所述方法包括立体选择性还原吗啡酮的酮以形成还原的吗啡酮并且任选地将水溶性聚合物共价连接到还原的吗啡酮上。

48. 发明申请

US20050136031A1 Chemically modified small molecules 有权
标题翻译：化学修饰的小分子
公开(公告)号：US20050136031A1
公开(公告)日：2005-06-23
申请号：US11015196
申请日：2004-12-16
申请人： Michael Bentley , Tacey Viegas , Richard Goodin , Lin Cheng , Xuan Zhao
发明人： Michael Bentley , Tacey Viegas , Richard Goodin , Lin Cheng , Xuan Zhao
IPC分类号： A61K31/765 , A61K31/785 , A61K47/48 , C08G65/08
CPC分类号： C08G65/337 , A61K47/60 , C08G65/332 , C08G65/33317 , C08G65/33396 , C08L2203/02
摘要： The invention provides small molecule drugs that are chemically modified by covalent attachment of a water-soluble oligomer obtained from a monodisperse or bimodal water-soluble oligomer composition. A conjugate of the invention, when administered by any of a number of administration routes, exhibits a reduced biological membrane crossing rate as compared to the biological membrane crossing rate of the small molecule drug not attached to the water-soluble oligomer.
摘要翻译：本发明提供了通过共价连接由单分散或双峰水溶性低聚物组合物获得的水溶性低聚物进行化学修饰的小分子药物。当与多种施用途径中的任何一种施用时，本发明的缀合物与未附着于水溶性低聚物的小分子药物的生物膜交联率相比，显示出降低的生物膜交叉率。

49. 外观设计

USD911835S1 Folding gift box 有权
公开(公告)号：USD911835S1
公开(公告)日：2021-03-02
申请号：US29677217
申请日：2019-01-18
申请人： Lin Cheng
设计人： Lin Cheng

50. 发明授权

US09601605B2 Bipolar junction transistor with improved avalanche capability 有权
公开(公告)号：US09601605B2
公开(公告)日：2017-03-21
申请号：US13438902
申请日：2012-04-04
申请人： Qingchun Zhang , Anant K. Agarwal , Lin Cheng
发明人： Qingchun Zhang , Anant K. Agarwal , Lin Cheng
IPC分类号： H01L29/73 , H01L29/06 , H01L29/74 , H01L29/16
CPC分类号： H01L29/7302 , H01L29/0626 , H01L29/1608 , H01L29/7424
摘要： A bipolar junction transistor (BJT), which includes a collector layer, a base layer on the collector layer, an emitter layer on the base layer, and a recess region embedded in the collector layer, is disclosed. A base-collector plane is between the base layer and the collector layer. The recess region is may be below the base-collector plane. Further, the recess region and the base layer are a first type of semiconductor material. By embedding the recess region in the collector layer, the recess region and the collector layer form a first P-N junction, which may provide a point of avalanche for the BJT. Further, the collector layer and the base layer form a second P-N junction. By separating the point of avalanche from the second P-N junction, the BJT may avalanche robustly, thereby reducing the likelihood of avalanche induced failures, particularly in silicon carbide (SiC) BJTs.

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