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41. 发明授权

US07939048B2 Assemblies of anisotropic nanoparticles 有权
标题翻译：各向异性纳米粒子组件
公开(公告)号：US07939048B2
公开(公告)日：2011-05-10
申请号：US11981871
申请日：2007-10-31
申请人： Billy J. Stanbery
发明人： Billy J. Stanbery
IPC分类号： C01B19/04 , C07C1/00 , B05D3/02 , B05D5/12 , B05D1/36 , H01L31/00
CPC分类号： C30B29/60 , B82Y30/00 , C30B29/46 , C30B29/605 , C30B33/00 , Y10S977/786 , Y10S977/81
摘要： Methods for assemblies of anisotropic nanoparticles which includes forming a substantially close packed dense layer by assembling a plurality of anisotropic nanoparticles, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction, wherein assembling includes mechanically interacting the plurality of anisotropic nanoparticles by imposing a delocalized force that defines a direction that is substantially perpendicular to a basal plane of the substantially closed packed dense layer; and imposing a fluctuating force to which the anisotropic nanoparticles respond, which is sufficient to overcome a short range weak attractive force between members of the plurality of anisotropic nanoparticles with respect to anisotropic nanoparticles that are not substantially overlapping.
摘要翻译：各向异性纳米颗粒的组装方法包括通过组装多个各向异性纳米颗粒形成基本紧密堆积的致密层，所述多个各向异性纳米颗粒中的每一个具有a）与第二尺寸和第三尺寸基本不同的第一尺寸，以及 b）基本上与第一方向对齐的非随机纳米颗粒晶体取向，其中组装包括通过施加限定了基本上垂直于基本上封闭的包装的基础平面的方向的离域力来机械地相互作用多个各向异性纳米颗粒致密层; 并且施加各向异性纳米颗粒响应的波动力，其足以克服多个各向异性纳米颗粒的成员之间相对于基本上不重叠的各向异性纳米颗粒的短程度弱吸引力。

42. 发明申请

US20110104412A1 METHOD FOR DEPOSITING SILICON NANOCRYSTALS IN HOLLOW FIBERS 有权
标题翻译：在中空纤维中沉积硅纳米晶的方法
公开(公告)号：US20110104412A1
公开(公告)日：2011-05-05
申请号：US12934125
申请日：2009-03-31
申请人： Jonathan Veinot , Jose Roberto Rodriguez , Pablo Bianucci , Al Meldrum
发明人： Jonathan Veinot , Jose Roberto Rodriguez , Pablo Bianucci , Al Meldrum
IPC分类号： B32B1/08 , B05D7/22
CPC分类号： B05D7/222 , B05D7/22 , B82Y15/00 , B82Y20/00 , B82Y30/00 , C01B33/021 , C01B33/023 , C30B7/06 , C30B28/04 , C30B29/06 , C30B29/605 , Y10T428/13 , Y10T428/1317
摘要： A method for depositing a layer of silicon nanocrystals upon the inside surface of hollow fibers is disclosed. In particular, the method includes inserting a hollow glass fiber into a solution of hydrogen silsesquioxane, removing the solvent and heating the hollow glass fiber to a temperature suitable to form silicon nanocrystals, and subsequently cooling the hollow glass fiber.
摘要翻译：公开了一种在中空纤维的内表面上沉积硅纳米晶体层的方法。特别地，该方法包括将中空玻璃纤维插入氢倍半硅氧烷溶液中，除去溶剂并将中空玻璃纤维加热至适于形成硅纳米晶体的温度，随后冷却中空玻璃纤维。

43. 发明申请

US20110097879A1 METHOD OF PREPARING LUMINESCENT NANOCRYSTALS, THE RESULTING NANOCRYSTALS AND USES THEREOF 有权
标题翻译：制备发光纳米晶的方法，结晶纳米晶及其用途
公开(公告)号：US20110097879A1
公开(公告)日：2011-04-28
申请号：US12990627
申请日：2009-04-29
申请人： Peter Reiss , Liang LI
发明人： Peter Reiss , Liang LI
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： C30B29/605 , B82Y30/00 , C09K11/025 , C09K11/565 , C30B7/00 , C30B29/40
摘要： The present invention comprises a method for preparing a nanocrystal having (i) a core comprising a semiconductor comprising A representing a metal or metalloid in the +III oxidation state and B representing an element in the −III oxidation state, coated with (ii) a shell in which the outer portion comprises a semiconductor having the formula ZnS1-xEx, where E represents an element in the −II oxidation state and x is a decimal number such that 0≦x
摘要翻译：本发明包括一种制备纳米晶体的方法，其具有（i）包含半导体的芯体，其包含A表示+ III氧化态的金属或准金属，B表示-III氧化态的元素，涂覆有（ii）壳体，其中外部部分包含具有式ZnS1-xEx的半导体，其中E表示-II氧化态的元素，x是十进制数，使得0＆nlE; x <1，所述方法包括以下步骤：加热 A的至少一种前体，B的至少一种前体，至少一种锌的前体，至少一种硫的前体，以及任选的至少一种E的前体，其温度T1至大于 T1以增加的方式形成，首先形成所述芯然后形成壳。本发明还涉及通过本发明的方法和其用途可获得的纳米晶体。

44. 发明授权

US07915151B2 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices 有权
标题翻译：掺杂的细长半导体，生长这样的半导体，包括这种半导体的器件和制造这样的器件
公开(公告)号：US07915151B2
公开(公告)日：2011-03-29
申请号：US11543353
申请日：2006-10-04
申请人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
发明人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
IPC分类号： H01G9/20 , H01L21/20 , H01L21/36
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less than 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety of assembling techniques may be used to fabricate devices from such a semiconductor.
摘要翻译：体积掺杂半导体，其为以下至少一个：单晶，细长体积掺杂半导体，其沿着其纵向轴线的任何点具有小于500纳米的最大横截面尺寸，具有至少一部分具有小于500纳米的最小宽度的单体和体掺杂半导体。这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米或更小的最小宽度小于20纳米，或小于10纳米，甚至小于5纳米。这样的半导体可以在生长期间被掺杂。这样的半导体可以是设备的一部分，其可以包括各种设备及其组合中的任何一种，并且可以使用各种组装技术来从这种半导体制造设备。

45. 发明授权

US07897494B2 Formation of single crystal semiconductor nanowires 有权
标题翻译：形成单晶半导体纳米线
公开(公告)号：US07897494B2
公开(公告)日：2011-03-01
申请号：US12490189
申请日：2009-06-23
申请人： Philippe M. Vereecken
发明人： Philippe M. Vereecken
IPC分类号： H01L21/20
CPC分类号： C30B29/60 , B82Y10/00 , B82Y30/00 , C30B1/023 , C30B29/605 , H01L29/0665 , H01L29/0673 , H01L29/0676 , Y10S977/762 , Y10S977/813
摘要： A method is provided for growing mono-crystalline nanostructures onto a substrate. The method comprises at least the steps of first providing a pattern onto a main surface of the substrate wherein said pattern has openings extending to the surface of the substrate, providing a metal into the openings of the pattern on the exposed main surface, at least partly filling the opening with amorphous material, and then annealing the substrate at temperatures between 300° C. and 1000° C. thereby transforming the amorphous material into a mono-crystalline material by metal mediated crystallization to form the mono-crystalline nanostructure.
摘要翻译：提供了一种将单晶纳米结构生长到基底上的方法。该方法至少包括以下步骤：首先在衬底的主表面上提供图案，其中所述图案具有延伸到衬底表面的开口，在暴露的主表面上的图案的开口中提供金属，至少部分地用无定形材料填充开口，然后在300℃和1000℃之间的温度下退火衬底，从而通过金属介导的结晶将无定形材料转化为单晶材料，以形成单晶纳米结构。

46. 发明申请

US20110024723A1 Nanoparticle synthesis 有权
标题翻译：纳米粒子合成
公开(公告)号：US20110024723A1
公开(公告)日：2011-02-03
申请号：US12511634
申请日：2009-07-29
申请人： Silvija Gradecak , Chun-Hao Tseng , Sung Keun Lim
发明人： Silvija Gradecak , Chun-Hao Tseng , Sung Keun Lim
IPC分类号： H01L29/66 , H01L21/20
CPC分类号： H01L29/66977 , B22F1/0018 , B22F9/24 , B22F2999/00 , B82Y30/00 , C30B7/14 , C30B29/02 , C30B29/605 , Y10S977/815 , Y10S977/893 , C25C5/00
摘要： A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. The nanoparticle can be formed with a barrier separating it from another nanoparticle on the substrate; for example, nanoparticle can be located in a pit etched in the substrate. The size and location of the nanoparticle can be stable at elevated temperatures.
摘要翻译：通过使基板的预定区域与包含贵金属离子的溶液接触，可以在半导体基板上生长贵金属纳米颗粒。可以通过在衬底上施加聚合物层来选择性地去除聚合物层的一部分来暴露半导体衬底的预定区域。可以以预定图案制备纳米颗粒。纳米颗粒可以形成有将其与衬底上的另一纳米颗粒分离的阻挡层; 例如，纳米颗粒可以位于在衬底中蚀刻的凹坑中。纳米颗粒的尺寸和位置在高温下可以是稳定的。

47. 发明授权

US07875195B2 Thick porous anodic alumina films and nanowire arrays grown on a solid substrate 有权
标题翻译：在固体基底上生长的厚多孔阳极氧化铝膜和纳米线阵列
公开(公告)号：US07875195B2
公开(公告)日：2011-01-25
申请号：US11832309
申请日：2007-08-01
申请人： Oded Rabin , Paul R. Herz , Mildred S. Dresselhaus , Akintunde I. Akinwande , Yu-Ming Lin
发明人： Oded Rabin , Paul R. Herz , Mildred S. Dresselhaus , Akintunde I. Akinwande , Yu-Ming Lin
IPC分类号： H01B13/00
CPC分类号： C23C14/024 , B82Y30/00 , C23C14/16 , C23C14/5873 , C30B7/00 , C30B7/005 , C30B29/605 , H01L35/32 , H01L35/34 , Y10T156/10 , Y10T428/12486 , Y10T428/1259 , Y10T428/24273 , Y10T428/24322 , Y10T428/24917
摘要： The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces. PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions, the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are deposited electrochemically into the pores of the template. By patterning the electrically conducting adhesion layer, pores in different areas of the template can be addressed independently, and can be filled electrochemically by different materials. Single-stage and multi-stage nanowire-based thermoelectric devices, consisting of both n-type and p-type nanowires, can be assembled on a silicon substrate by this method.
摘要翻译：目前公开的发明提供了在各种基底上制造多孔阳极氧化铝（PAA）膜。衬底包括晶片层，并且还可以包括沉积在晶片层上的粘附层。在基板上形成阳极氧化铝模板。当使用诸如Si的刚性基材时，所得的阳极氧化铝膜更易于处理，容易在均匀的方式在广泛的区域生长，并且操作而没有开裂的危险。可以操作基底以获得高光学质量和基本平坦表面的独立氧化铝模板。 PAA膜也可以在图案和非平面表面上生长。此外，在某些条件下，所得PAA缺少阻挡层（部分或完全），并且孔的底部可以容易地电接触。所得膜可以用作形成纳米线阵列的模板，其中纳米线电化学沉积到模板的孔中。通过图案化导电粘合层，可以独立地解决模板的不同区域中的孔，并且可以通过不同的材料电化学填充。通过这种方法，可以在硅衬底上组装由n型和p型纳米线组成的单级和多级纳米线型热电装置。

48. 发明申请

US20100285229A1 Method for Generating Oxidic Nanoparticles from a Material Forming Oxide Particles 有权
标题翻译：从形成氧化物颗粒的材料产生氧化物纳米颗粒的方法
公开(公告)号：US20100285229A1
公开(公告)日：2010-11-11
申请号：US12377635
申请日：2007-08-14
申请人： Mady Elbahri , Rainer Adelung
发明人： Mady Elbahri , Rainer Adelung
IPC分类号： B05D1/18 , C01G9/02 , B01J19/00
CPC分类号： C01G1/02 , B82Y30/00 , C01G9/02 , C01G23/053 , C01P2004/03 , C01P2004/64 , C30B7/005 , C30B29/16 , C30B29/605
摘要： A method for generating oxidic nanoparticles from a material forming oxide particles, comprising the steps of: preparation of an aqueous solution containing ions of the material forming the oxide particles, film evaporation of the solution at a temperature above 200° C., and skimming off the nanoparticles floating on the surface of the aqueous solution generated in the vicinity of the vapour film on film evaporation. A device for performing the method is also provided.
摘要翻译：一种从形成氧化物颗粒的材料生成氧化性纳米颗粒的方法，包括以下步骤：制备含有形成氧化物颗粒的材料的离子的水溶液，在高于200℃的温度下将溶液膜蒸发并除去在蒸镀膜附近产生的水溶液的表面上的纳米粒子蒸镀。还提供了一种用于执行该方法的装置。

49. 发明申请

US20100283014A1 FUNCTIONALIZED NANOPARTICLES AND METHOD 有权
公开(公告)号：US20100283014A1
公开(公告)日：2010-11-11
申请号：US12722028
申请日：2010-03-11
申请人： CRAIG BREEN , Marshall Cox , Jonathan S. Steckel
发明人： CRAIG BREEN , Marshall Cox , Jonathan S. Steckel
IPC分类号： H01B1/02
CPC分类号： C09K11/025 , B82Y20/00 , B82Y30/00 , C09K11/565 , C09K11/881 , C09K11/883 , C30B29/605 , C30B33/00 , G01N33/54346 , G01N33/587 , Y10S977/774 , Y10S977/95
摘要： A nanoparticle including an inorganic core comprising at least one metal and/or at least one semi-conductor compound comprising at least one metal includes a coating or shell disposed over at least a portion of a surface of the core. The coating can include one or more layers. Each layer of the coating can comprise a metal and/or at least one semiconductor compound. The nanoparticle further includes a ligand attached to a surface of the coating. The ligand is represented by the formula: X-Sp-Z, wherein X represents, e.g., a primary amine group, a secondary amine group, a urea, a thiourea, an imidizole group, an amide group, a phosphonic or arsonic acid group, a phosphinic or arsinic acid group, a phosphate or arsenate group, a phosphine or arsine oxide group; Sp represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; and Z represents: (i) reactive group capable of communicating specific chemical properties to the nanocrystal as well as provide specific chemical reactivity to the surface of the nanocrystal, and/or (ii) a group that is cyclic, halogenated, or polar a-protic. In certain embodiments, at least two chemically distinct ligands are attached to an surface of the coating, wherein the at least two ligands (I and II) are represented by the formula: X-Sp-Z. In ligand (I) X represents a phosphonic, phosphinic, or phosphategroup and in ligand (II) X represents a primary or secondary amine, or an imidizole, or an amide; In both ligands (I) and (II) Sp, which can be the same or different in the two compounds, represents a spacer group, such as a group capable of allowing a transfer of charge or an insulating group; Z, which can be the same or different in the two compounds, is a group chosen from among groups capable of communicating specific chemical properties to the nanoparticle as well as provide specific chemical reactivity to the surface of the nanoparticle. In preferred embodiments, the nanoparticle includes a core comprising a semiconductor material.

50. 发明授权

US07816753B2 IrOx nanostructure electrode neural interface optical device 有权
标题翻译： IrOx纳米结构电极神经接口光学器件
公开(公告)号：US07816753B2
公开(公告)日：2010-10-19
申请号：US12240501
申请日：2008-09-29
申请人： Fengyan Zhang , Sheng Teng Hsu
发明人： Fengyan Zhang , Sheng Teng Hsu
IPC分类号： H01L21/00
CPC分类号： C30B25/00 , A61N1/0543 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C30B29/16 , C30B29/605 , Y10S977/811 , Y10S977/904 , Y10S977/932
摘要： An optical device with an iridium oxide (IrOx) electrode neural interface, and a corresponding fabrication method are provided. The method provides a substrate and forms a first conductive electrode overlying the substrate. A photovoltaic device having a first electrical interface is connected to the first electrode. A second electrical interface of the photovoltaic device is connected to a second conductive electrode formed overlying the photovoltaic device. An array of neural interface single-crystal IrOx nanostructures are formed overlying the second electrode, where x≦4. The IrOx nanostructures can be partially coated with an electrical insulator, such as SiO2, SiN, TiO2, or spin on glass (SOG), leaving the IrOx distal ends exposed. In one aspect, a buffer layer is formed overlying the second electrode surface, made from a material such as LiNbO3, LiTaO3, or SA, for the purpose of orienting the growth direction of the IrOx nanostructures.
摘要翻译：提供了具有氧化铱（IrOx）电极神经接口的光学器件及相应的制造方法。该方法提供了一个衬底并且形成了覆盖衬底的第一导电电极。具有第一电接口的光电器件连接到第一电极。光电器件的第二电接口连接到形成在光伏器件上的第二导电电极。形成了覆盖第二电极的神经接口单晶IrOx纳米结构阵列，其中x＆nlE; 4。 IrOx纳米结构可以部分地涂覆有诸如SiO 2，SiN，TiO 2或旋转玻璃（SOG）之类的电绝缘体，使得IrOx远端暴露。在一个方面，为了定向IrOx纳米结构的生长方向，形成了由诸如LiNbO 3，LiTaO 3或SA的材料制成的第二电极表面上的缓冲层。

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