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41. 发明申请

US20160094209A1 METHOD AND CIRCUIT FOR ELIMINATING TRANSFORMER SATURATION IN THE PRESENCE OF DC OFFSET VOLTAGE 审中-公开
标题翻译：在直流偏置电压存在下消除变压器饱和的方法和电路
公开(公告)号：US20160094209A1
公开(公告)日：2016-03-31
申请号：US14851295
申请日：2015-09-11
申请人： Liebert Corporation
发明人： Terry D. BUSH , Charles DUNN , James MILLER , Charles F. BLAIR
IPC分类号： H03K5/003 , H03K17/74
CPC分类号： H03K5/003 , H03K17/74
摘要： A DC offset voltage in an AC input voltage to a transformer and associated saturation current are eliminated by the placement of an anti-parallel diode pair circuit in series between a source of the AC input voltage and a primary winding of the transformer. The anti-parallel diode pair circuit has an input coupled to an output by parallel connected oppositely biased branch diode circuits. Each branch diode circuit has at least one diode where the diode of one such branch diode circuit is biased in one direction and the diode of the other such branch diode circuit is biased in an opposite direction and each branch diode circuit has the same number of diodes as the other branch diode circuit.
摘要翻译：通过在AC输入电压源和变压器的初级绕组之间串联布置反并联二极管对电路，消除了到变压器的交流输入电压和相关饱和电流中的直流偏移电压。反并联二极管对电路具有通过并联的相对偏置的分支二极管电路耦合到输出的输入。每个分支二极管电路具有至少一个二极管，其中一个这种分支二极管电路的二极管在一个方向上被偏置，而另一个这样的分支二极管电路的二极管被以相反的方向偏置，并且每个分支二极管电路具有相同数量的二极管作为其他分支二极管电路。

42. 发明授权

US09294007B2 Gate driving circuit and inverter having the same 有权
标题翻译：栅极驱动电路和逆变器具有相同的功能
公开(公告)号：US09294007B2
公开(公告)日：2016-03-22
申请号：US13768909
申请日：2013-02-15
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： In Wha Jeong , Bum Seok Suh
IPC分类号： H02M7/537 , H02M1/08 , H02M7/5387 , H03K17/0814 , H03K17/10 , H03K17/74 , H02M7/487 , H02M1/00
CPC分类号： H02M7/537 , H02M1/08 , H02M7/487 , H02M7/5387 , H02M2001/0006 , H03K17/08148 , H03K17/107 , H03K17/74
摘要： There is provided an inverter including: an inverter unit including at least one inverter arm having a plurality of switches, and switching the input power according to control to output an alternating current power; at least one driving unit including at least one high voltage gate driving unit having a plurality high voltage gate drivers connected to one another in series between an input terminal of an instruction signal instructing a switching control of an inverter unit and an output terminal of a control signal controlling switching of the inverter unit to control switching driving of a high side switch and including at least one low voltage gate driver to control switching driving of a low side switch; and at least one bootstrap unit charging/discharging and dividing a voltage generated at the time of switching the plurality of switches according to switching control of the driving unit.
摘要翻译：提供一种逆变器，包括：逆变器单元，包括具有多个开关的至少一个逆变臂，并根据控制切换输入功率以输出交流电力; 至少一个驱动单元，其包括至少一个高电压栅极驱动单元，所述至少一个高电压栅极驱动单元具有多个高电压栅极驱动器，所述多个高压栅极驱动器串联连接在指示逆变器单元的开关控制的指令信号的输入端与控制器的输出端子之间信号控制逆变器单元的切换以控制高侧开关的开关驱动，并且包括至少一个低压栅极驱动器以控制低侧开关的开关驱动; 以及至少一个自举单元根据所述驱动单元的切换控制来对所述多个开关进行切换时产生的电压进行充放电。

43. 发明授权

US09070562B2 Circuit including a switching element, a rectifying element, and a charge storage element 有权
标题翻译：电路包括开关元件，整流元件和电荷存储元件
公开(公告)号：US09070562B2
公开(公告)日：2015-06-30
申请号：US13794038
申请日：2013-03-11
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Gary H. Loechelt , Carroll Casteel
IPC分类号： H02M3/158 , H01L27/06 , H03K17/0814 , H03K17/16 , H03K17/74 , H02M1/32 , H02M7/538
CPC分类号： H01L27/0629 , H02M1/32 , H02M3/1588 , H02M7/538 , H03K17/0814 , H03K17/162 , H03K17/74
摘要： A circuit can include a pair of switching elements that have terminals electrically connected to terminals of a power supply and have other terminals electrically connected to an output terminal. The circuit can include rectifying elements and one or more charge storage elements. The circuit may be used as a Buck converter. The rectifying element(s) and charge storage element(s) may help to reduce ringing at an output terminal of the circuit during normal operation and reduce the likelihood of exceeding a breakdown voltage between current-carrying electrodes of a switching element within the circuit during a switching operation.
摘要翻译：电路可以包括一对开关元件，其具有电连接到电源的端子的端子，并且其他端子电连接到输出端子。电路可以包括整流元件和一个或多个电荷存储元件。该电路可以用作降压转换器。整流元件和电荷存储元件可以有助于在正常操作期间减少电路的输出端子处的振铃，并且减小在电路内的开关元件的载流电极之间的击穿电压的可能性切换操作。

44. 发明授权

US09065426B2 High frequency solid state switching for impedance matching 有权
标题翻译：用于阻抗匹配的高频固态开关
公开(公告)号：US09065426B2
公开(公告)日：2015-06-23
申请号：US13830563
申请日：2013-03-14
申请人： Advanced Energy Industries, Inc.
发明人： Christopher C. Mason
IPC分类号： H03H11/28 , H01J37/32 , H03H7/40 , H05H1/46 , H03K17/56 , H03K17/74
CPC分类号： H03H11/28 , H01J37/32183 , H03H7/40 , H03K17/56 , H03K17/74 , H05H2001/4682
摘要： In accordance with this invention the above and other problems are solved by a switching apparatus and method that uses a switching circuit having a pair of parallel solid-state diodes (e.g., PN or PIN diodes), one of which is connected to a transistor (e.g., power MOSFET or IGBT), to switch a capacitor (or reactance element) in or out of a variable capacitance element (or variable reactance element) of an impedance matching network. Charging a body capacitance of the transistor reverse biases one of the two diodes so as to isolate the transistor from the RF signal enabling a low-cost high capacitance transistor to be used. Multiple such switching circuits and capacitors (or reactance elements) are connected in parallel to provide variable impedance for the purpose of impedance matching.
摘要翻译：根据本发明，通过开关装置和方法解决了上述和其它问题，该开关装置和方法使用具有一对并联固态二极管（例如PN或PIN二极管）的开关电路，其中一个连接到晶体管（例如功率MOSFET或IGBT），将电容器（或电抗元件）切换到阻抗匹配网络的可变电容元件（或可变电抗元件）中或之外。充电晶体管的体电容反向偏置两个二极管中的一个，以便将晶体管与RF信号隔离，从而能够使用低成本的高电容晶体管。多个这样的开关电路和电容器（或电抗元件）并联连接以提供可变阻抗以用于阻抗匹配。

45. 发明授权

US08981380B2 Monolithic integration of silicon and group III-V devices 有权
标题翻译：硅和III-V族器件的整体集成
公开(公告)号：US08981380B2
公开(公告)日：2015-03-17
申请号：US12928103
申请日：2010-12-03
申请人： Michael A. Briere
发明人： Michael A. Briere
IPC分类号： H01L21/00 , H01L27/06 , H01L21/8258 , H03K17/567 , H03K17/74 , H01L29/778 , H01L29/20
CPC分类号： H01L27/0629 , H01L21/8258 , H01L27/0688 , H01L29/2003 , H01L29/7786 , H03K17/567 , H03K17/74
摘要： Disclosed is a monolithically integrated silicon and group III-V device that includes a group III-V transistor formed in a III-V semiconductor body disposed over a silicon substrate. At least one via extends through the III-V semiconductor body to couple at least one terminal of the group III-V transistor to a silicon device formed in the silicon substrate. The silicon device can be a Schottky diode, and the group III-V transistor can be a GaN HEMT. In one embodiment an anode of the Schottky diode is formed in the silicon substrate. In another embodiment, the anode of the Schottky diode is formed in a lightly doped epitaxial silicon layer atop the silicon substrate. In one embodiment a parallel combination of the Schottky diode and the group III-V transistor is formed, while in another embodiment is series combination is formed.
摘要翻译：公开了一种单片集成硅和III-V族器件，其包括在设置在硅衬底上的III-V半导体体中形成的III-V族晶体管。至少一个通孔延伸穿过III-V半导体体，以将III-V族晶体管的至少一个端子耦合到形成在硅衬底中的硅器件。硅器件可以是肖特基二极管，III-V族晶体管可以是GaN HEMT。在一个实施例中，在硅衬底中形成肖特基二极管的阳极。在另一个实施例中，肖特基二极管的阳极形成在硅衬底顶上的轻掺杂的外延硅层中。在一个实施例中，形成了肖特基二极管和III-V族晶体管的并联组合，而在另一实施例中形成串联组合。

46. 发明申请

US20150061751A1 MATRIX-STAGES SOLID STATE ULTRAFAST SWITCH 有权
标题翻译： MATRIX-STAGES固态超声波开关
公开(公告)号：US20150061751A1
公开(公告)日：2015-03-05
申请号：US14480281
申请日：2014-09-08
申请人： Silicon Power Corporation
发明人： Boris RESHETNYAK , Dante E. PICCONE , Victor TEMPLE
IPC分类号： H03K3/57 , H03K17/60 , H03K17/74 , H03K17/10 , H03K17/687
CPC分类号： H03K3/57 , H03K17/0403 , H03K17/10 , H03K17/105 , H03K17/125 , H03K17/60 , H03K17/6871 , H03K17/74
摘要： A semiconductor switching device for switching high voltage and high current. The semiconductor switching device includes a control-triggered stage and one or more auto-triggered stages. The control-triggered stage includes a plurality of semiconductor switches, a breakover switch, a control switch, a turn-off circuit, and a capacitor. The control-triggered stage is connected in series to the one or more auto-triggered stages. Each auto-triggered stage includes a plurality of semiconductor switches connected in parallel, a breakover switch, and a capacitor. The control switch provides for selective turn-on of the control-triggered stage. When the control-triggered stage turns on, the capacitor of the control-triggered stage discharges into the gates of the plurality of semiconductor switches of the next highest stage to turn it on. Each auto-triggered stage turns on in a cascade fashion as the capacitor of the adjacent lower stage discharges or as the breakover switches of the auto-triggered stages turn on.
摘要翻译：一种用于切换高电压和高电流的半导体开关器件。半导体开关装置包括控制触发级和一个或多个自动触发级。控制触发级包括多个半导体开关，断路开关，控制开关，截止电路和电容器。控制触发级与一个或多个自动触发级串联连接。每个自动触发级包括并联连接的多个半导体开关，断路开关和电容器。控制开关提供控制触发级的选择性接通。当控制触发级接通时，控制触发级的电容器放电到下一个最高级的多个半导体开关的栅极，使其导通。每个自动触发阶段以相邻较低级的电容放电或随着自动触发级的断路开关导通而以级联方式接通。

47. 发明授权

US08917135B2 Circuit with a plurality of diodes and method for controlling such a circuit 有权
标题翻译：具有多个二极管的电路和控制这种电路的方法
公开(公告)号：US08917135B2
公开(公告)日：2014-12-23
申请号：US13893430
申请日：2013-05-14
申请人： Infineon Technologies Austria AG
发明人： Franz Hirler , Anton Mauder , Frank Pfirsch
IPC分类号： H03K17/74
CPC分类号： H03K17/74 , H01L2224/32145 , H03K17/161 , H03K2217/0036
摘要： A circuit includes a diode circuit and a deactivation circuit. The diode circuit includes a first terminal, a second terminal, and a plurality of diodes coupled in parallel between the first terminal and the second terminal. The diode circuit is configured to be forward biased in an on-time and reverse biased in an off-time. The deactivation circuit is configured to switch a first group of the diodes into a deactivation state at a time instant before the end of the on-time, the first group of diodes including one or more but less than all of the diodes included in the diode circuit.
摘要翻译：电路包括二极管电路和去激活电路。二极管电路包括第一端子，第二端子和并联在第一端子和第二端子之间的多个二极管。二极管电路被配置为在关断时间内以导通时间和反向偏置正向偏置。停用电路被配置为在导通时间结束之前的时刻将第二组二极管切换到去激活状态，第一组二极管包括一个或多个但是小于二极管中包含的所有二极管电路。

48. 发明授权

US08853706B2 High voltage cascoded III-nitride rectifier package with stamped leadframe 有权
标题翻译：具有冲压引线框架的高压级联III族氮化物整流器封装
公开(公告)号：US08853706B2
公开(公告)日：2014-10-07
申请号：US13364189
申请日：2012-02-01
申请人： Chuan Cheah , Dae Keun Park
发明人： Chuan Cheah , Dae Keun Park
IPC分类号： H01L21/60 , H03K17/567 , H01L23/00 , H03K17/74 , H01L23/495 , H03K17/687 , H01L25/18
CPC分类号： H03K17/74 , H01L23/49562 , H01L23/49575 , H01L24/01 , H01L25/18 , H01L2924/12032 , H01L2924/12036 , H01L2924/12041 , H01L2924/1306 , H01L2924/13064 , H01L2924/15747 , H01L2924/181 , H03K17/567 , H03K17/687 , H03K2017/6875 , H01L2924/00
摘要： Some exemplary embodiments of high voltage cascoded III-nitride semiconductor package with a stamped leadframe have been disclosed. One exemplary embodiment comprises a III-nitride transistor having an anode of a diode stacked atop a source of the III-nitride transistor, and a stamped leadframe comprising a first bent lead coupled to a gate of the III-nitride transistor and the anode of the diode, and a second bent lead coupled to a drain of the III-nitride transistor. The bent leads expose respective flat portions that are surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since multiple packages may be assembled at a time, high integration and cost savings may be achieved compared to conventional methods requiring individual package processing and externally sourced parts.
摘要翻译：已经公开了具有冲压引线框架的高压级联III族氮化物半导体封装的一些示例性实施例。一个示例性实施例包括III族氮化物晶体管，其具有堆叠在III族氮化物晶体管的源极之上的二极管的阳极，以及冲压引线框架，包括耦合到III族氮化物晶体管的栅极的第一弯曲引线和二极管和耦合到III族氮化物晶体管的漏极的第二弯曲引线。弯曲的引线暴露可表面安装的各个平坦部分。以这种方式，与传统的导线接合封装相比，可以实现减小的封装占地面积，改进的浪涌电流能力和更高的性能。此外，由于可以一次组装多个封装，与需要单独封装处理和外部来源部件的常规方法相比，可以实现高集成度和成本节省。

49. 发明授权

US08847563B2 Power converter circuits including high electron mobility transistors for switching and rectifcation 有权
标题翻译：功率转换器电路包括用于开关和整流的高电子迁移率晶体管
公开(公告)号：US08847563B2
公开(公告)日：2014-09-30
申请号：US12837092
申请日：2010-07-15
申请人： Robert Joseph Callanan
发明人： Robert Joseph Callanan
IPC分类号： H02M3/156 , H03K17/74 , H03K17/567 , H02M3/158
CPC分类号： H02M1/08 , H02M3/33507 , H02M2001/0003 , H03K17/567 , H03K17/74
摘要： A power converter circuit includes a storage component, a rectifier component comprising a first field effect transistor and having first and second bias states, and a switch including a second field effect transistor having first and second operational states. The first and second field effect transistors are High Electron Mobility Transistors (HEMTs).
摘要翻译：功率转换器电路包括存储部件，包括第一场效应晶体管并具有第一和第二偏置状态的整流器部件，以及包括具有第一和第二操作状态的第二场效应晶体管的开关。第一和第二场效应晶体管是高电子迁移率晶体管（HEMT）。

50. 发明授权

US08416015B2 Active rectifying apparatus 有权
标题翻译：主动整流装置
公开(公告)号：US08416015B2
公开(公告)日：2013-04-09
申请号：US13078386
申请日：2011-04-01
申请人： Chikara Tsuchiya
发明人： Chikara Tsuchiya
IPC分类号： H03K17/74 , H03G11/02
CPC分类号： H03K17/302 , H01L27/0817 , H01L27/088 , H03K2017/307
摘要： A semiconductor apparatus includes: a first transistor; a second transistor having a higher withstand voltage than the first transistor, a source of the second transistor coupled to a drain of the first transistor, a gate of the second transistor coupled to a source of the first transistor; a third transistor having a higher withstand voltage than the first transistor and a drain of the third transistor coupled to a drain of the second transistor; and a comparator that compares a source voltage of the first transistor with a source voltage of the third transistor, and controls a gate voltage of the first transistor.
摘要翻译：一种半导体装置，包括：第一晶体管; 第二晶体管具有比第一晶体管更高的耐受电压，第二晶体管的源极耦合到第一晶体管的漏极，第二晶体管的栅极耦合到第一晶体管的源极; 具有比第一晶体管更高的耐受电压的第三晶体管和耦合到第二晶体管的漏极的第三晶体管的漏极; 以及比较器，其将第一晶体管的源极电压与第三晶体管的源极电压进行比较，并且控制第一晶体管的栅极电压。

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