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    • 53. 发明申请
    • Display Device
    • 显示设备
    • US20110316820A1
    • 2011-12-29
    • US13166463
    • 2011-06-22
    • Hajime Kimura
    • Hajime Kimura
    • G09G5/00
    • G09G3/344G09G2230/00G09G2310/061G09G2320/0257G09G2380/14
    • A method for reducing afterimages in a device for displaying images by application of an electric field to a charged substance is provided. A plurality of pixels each include a display element including a pixel electrode, a charged layer, and a counter electrode. The display device has a function of applying different potentials to pixel electrodes that are adjacent to each other in a period during which the pixels are initialized. Thus, electric fields are generated not only in a direction perpendicular to the pixel electrodes but also in a direction parallel to the pixel electrodes (the end-face direction of the pixel electrodes), so that charged substances in the charged layer stir. Accordingly, aggregation can be prevented.
    • 提供一种减少用于通过对带电物质施加电场来显示图像的装置中的残影的方法。 多个像素各自包括包括像素电极,带电层和对电极的显示元件。 该显示装置具有在像素被初始化的时段内将不同的电位施加到彼此相邻的像素电极的功能。 因此,不仅在与像素电极垂直的方向上,而且在与像素电极平行的方向(像素电极的端面方向)上产生电场,使得带电层中的带电物质搅拌。 因此,可以防止聚集。
    • 54. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD OF DRIVING THE SAME
    • 半导体集成电路及其驱动方法
    • US20110298082A1
    • 2011-12-08
    • US13214288
    • 2011-08-22
    • Hajime KimuraJun Koyama
    • Hajime KimuraJun Koyama
    • H01L27/10
    • G09G3/3283G09G3/2022G09G3/325G09G3/3266G09G2300/0408G09G2300/0814G09G2300/0842G09G2300/0861G09G2330/02
    • A transistor causes fluctuation in the threshold and mobility due to the factor such as fluctuation of the gate length, the gate width, and the gate insulating film thickness generated by the difference of the manufacturing steps and the substrate to be used. As a result, there is caused fluctuation in the current value supplied to the pixel due to the influence of the characteristic fluctuation of the transistor, resulting in generating streaks in the display image. A light emitting device is provided which reduces influence of characteristics of transistors in a current source circuit constituting a signal line driving circuit until the transistor characteristics do not affect the device and which can display a clear image with no irregularities. A signal line driving circuit of the present invention can prevent streaks in a displayed image and uneven luminance. Also, the present invention makes it possible to form elements of a pixel portion and driving circuit portion from polysilicon on the same substrate integrally. In this way, a display device with reduced size and current consumption is provided as well as electronic equipment using the display device.
    • 晶体管由于制造步骤的差异和要使用的基板产生的栅极长度,栅极宽度和栅极绝缘膜厚度的波动等因素导致阈值和迁移率的波动。 结果,由于晶体管的特性波动的影响,导致提供给像素的电流值的波动,导致在显示图像中产生条纹​​。 提供一种降低构成信号线驱动电路的电流源电路中的晶体管的特性的影响的发光器件,直到晶体管特性不影响器件,并且可以显示没有不规则的清晰图像。 本发明的信号线驱动电路可以防止显示图像中的条纹和不均匀的亮度。 此外,本发明使得可以在同一基底上的多晶硅一体地形成像素部分和驱动电路部分的元件。 以这种方式,提供了具有减小的尺寸和电流消耗的显示装置以及使用该显示装置的电子设备。
    • 57. 发明授权
    • Semiconductor device and electronic device using the same
    • 半导体器件和使用其的电子器件
    • US08058675B2
    • 2011-11-15
    • US12000606
    • 2007-12-14
    • Hajime Kimura
    • Hajime Kimura
    • H01L31/06
    • H01L27/14692H01L27/14609H01L27/14643H01L31/1055H04N5/35518H04N5/374
    • To provide a semiconductor device which can detect low illuminance. A photoelectric conversion element, a diode-connected first transistor, and a second transistor are included. A gate of the first transistor is electrically connected to a gate of the second transistor. One of a source and a drain of the first transistor is electrically connected to one of a source and a drain of the second transistor through the photoelectric conversion element. The other of the source and the drain of the first transistor is electrically connected to the other of the source and the drain of the second transistor. By using transistors which have different threshold voltages for the first transistor and the second transistor, a semiconductor device which can perform detecting of low illuminance can be obtained.
    • 提供可以检测低照度的半导体器件。 包括光电转换元件,二极管连接的第一晶体管和第二晶体管。 第一晶体管的栅极电连接到第二晶体管的栅极。 第一晶体管的源极和漏极之一通过光电转换元件电连接到第二晶体管的源极和漏极之一。 第一晶体管的源极和漏极中的另一个电连接到第二晶体管的源极和漏极中的另一个。 通过使用对于第一晶体管和第二晶体管具有不同阈值电压的晶体管,可以获得能够执行低照度检测的半导体器件。