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51. 发明授权

US08030833B2 Electron emission device incorporating free standing monocrystalline nanowires 有权
标题翻译：结合自由基单晶纳米线的电子发射器件
公开(公告)号：US08030833B2
公开(公告)日：2011-10-04
申请号：US12069910
申请日：2008-02-13
申请人： Hyungsoo Choi , Kyekyoon Kim
发明人： Hyungsoo Choi , Kyekyoon Kim
IPC分类号： H01J1/30 , H01J1/304
CPC分类号： C30B29/60 , B22F2998/00 , B82Y30/00 , C23C16/18 , C30B25/02 , C30B29/02 , C30B29/605 , Y10S977/762 , Y10S977/932 , Y10S977/939 , Y10S977/952 , Y10T428/26 , B22F1/004
摘要： One embodiment includes forming a nanowire on a substrate from an organometallic vapor. The nanowire is grown during this formation in a direction away from the substrate and is freestanding during growth. The nanowire has a first dimension of 500 nanometers or less and a second dimension extending from the substrate to a free end of the nanowire at least 10 times greater than the first dimension. In one form, the organometallic vapor includes copper, silver, or gold. Alternatively or additionally, the nanowire is of a monocrystalline structure.
摘要翻译：一个实施方案包括在有机金属蒸气的基底上形成纳米线。纳米线在这种形成过程中沿远离基底的方向生长，并且在生长期间是独立的。纳米线具有500纳米或更小的第一尺寸和从基底延伸到纳米线的自由端的第二尺寸比第一尺寸大至少10倍。在一种形式中，有机金属蒸气包括铜，银或金。或者或另外，纳米线是单晶结构的。

52. 发明授权

US08021480B2 Microfluidic free interface diffusion techniques 有权
标题翻译：微流体界面扩散技术
公开(公告)号：US08021480B2
公开(公告)日：2011-09-20
申请号：US12762170
申请日：2010-04-16
申请人： Carl L. Hansen , Stephen R. Quake , James M. Berger
发明人： Carl L. Hansen , Stephen R. Quake , James M. Berger
IPC分类号： C30B29/02
CPC分类号： C30B7/14 , B01F5/00 , B01F13/0093 , B01J2219/00355 , B01J2219/00378 , B01J2219/00396 , B01J2219/00398 , B01J2219/00439 , B01J2219/005 , B01J2219/00527 , B01J2219/00605 , B01J2219/0061 , B01J2219/00612 , B01J2219/00619 , B01J2219/00621 , B01J2219/00635 , B01J2219/00637 , B01J2219/00659 , B01J2219/00707 , B01J2219/00722 , B01J2219/00725 , B01L3/502738 , B01L3/502746 , B01L3/502769 , B01L7/54 , B01L9/527 , B01L2200/025 , B01L2200/027 , B01L2200/0605 , B01L2200/10 , B01L2300/0681 , B01L2300/0861 , B01L2300/123 , B01L2300/14 , B01L2300/18 , B01L2400/0481 , B01L2400/0655 , B01L2400/0688 , B81B1/00 , C30B29/02 , F04B43/043 , F16K99/0001 , F16K99/0015 , F16K99/0017 , F16K99/0059 , F16K2099/0074 , F16K2099/0078 , F16K2099/008 , F16K2099/0084 , F16K2099/0086 , Y10T117/1004 , Y10T117/1008 , Y10T117/1012 , Y10T137/0318 , Y10T137/0324 , Y10T137/2224 , Y10T436/25
摘要： A static fluid and a second fluid are placed into contact along a microfluidic free interface and allowed to mix by diffusion without convective flow across the interface. In accordance with one embodiment of the present invention, the fluids are static and initially positioned on either side of a closed valve structure in a microfluidic channel having a width that is tightly constrained in at least one dimension. The valve is then opened, and no-slip layers at the sides of the microfluidic channel suppress convective mixing between the two fluids along the resulting interface. Applications for microfluidic free interfaces in accordance with embodiments of the present invention include, but are not limited to, protein crystallization studies, protein solubility studies, determination of properties of fluidics systems, and a variety of biological assays such as diffusive immunoassays, substrate turnover assays, and competitive binding assays.
摘要翻译：将静态流体和第二流体沿微流体界面放置接触，并允许通过扩散混合而不对流流过该界面。根据本发明的一个实施例，流体是静态的，并且最初位于微流体通道中的封闭阀结构的任一侧上，该微流体通道的宽度被紧紧地约束在至少一个维度上。然后打开阀门，并且微流体通道两侧的防滑层抑制沿着所得界面的两种流体之间的对流混合。根据本发明的实施方案的用于微流体自由界面的应用包括但不限于蛋白质结晶研究，蛋白质溶解度研究，流体系统的性质的确定以及各种生物测定如扩散免疫测定，底物转换测定和竞争性结合测定。

53. 发明授权

US08007864B2 Method for forming metallic nanowires 有权
标题翻译：形成金属纳米线的方法
公开(公告)号：US08007864B2
公开(公告)日：2011-08-30
申请号：US11969675
申请日：2008-01-04
申请人： In-Gann Chen , Jenn-Ming Song , Hsien-Tse Tung
发明人： In-Gann Chen , Jenn-Ming Song , Hsien-Tse Tung
IPC分类号： B05D3/02
CPC分类号： C23C14/5806 , C23C14/083 , C23C18/06 , C30B7/14 , C30B29/02 , C30B29/62
摘要： A method for forming well-aligned metallic nanowires includes: (a) providing a substrate formed with a crystal layer thereon; (b) disposing the substrate in such a manner that the crystal layer faces downwardly; (c) applying a metal salt solution, which contains metal ions therein, to the crystal layer on the substrate; and (d) subjecting the metal ions in the metal salt solution on the crystal of TiO2 layer to a reduction treatment, thereby resulting in reduced metal that grows downward toward earth's gravity.
摘要翻译：用于形成良好排列的金属纳米线的方法包括：（a）提供在其上形成有晶体层的衬底; （b）以使晶体层面向下方的方式设置基板; （c）将在其中含有金属离子的金属盐溶液施加到基板上的晶体层; 和（d）使金属盐溶液中的金属离子对TiO 2层的结晶进行还原处理，从而导致金属向下朝向地球重力生长。

54. 发明申请

US20110204318A1 FORMATION OF CARBON AND SEMICONDUCTOR NANOMATERIALS USING MOLECULAR ASSEMBLIES 有权
标题翻译：使用分子组装法制备碳和半导体纳米材料
公开(公告)号：US20110204318A1
公开(公告)日：2011-08-25
申请号：US12973063
申请日：2010-12-20
申请人： Ali Afzali-Ardakani , Cherie R. Kagan , Laura L. Kosbar
发明人： Ali Afzali-Ardakani , Cherie R. Kagan , Laura L. Kosbar
IPC分类号： H01L29/66
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/00 , C30B29/02 , C30B29/60 , H01L29/0673 , H01L29/0676 , H01L29/78681 , H01L29/78684 , Y10S977/762 , Y10S977/84 , Y10S977/89 , Y10S977/932 , Y10S977/936 , Y10S977/938
摘要： The invention is directed to a method of forming carbon nanomaterials or semiconductor nanomaterials. The method comprises providing a substrate and attaching a molecular precursor to the substrate. The molecular precursor includes a surface binding group for attachment to the substrate and a binding group for attachment of metal-containing species. The metal-containing species is selected from a metal cation, metal compound, or metal or metal-oxide nanoparticle to form a metallized molecular precursor. The metallized molecular precursor is then subjected to a heat treatment to provide a catalytic site from which the carbon nanomaterials or semiconductor nanomaterials form. The heating of the metallized molecular precursor is conducted under conditions suitable for chemical vapor deposition of the carbon nanomaterials or semiconductor nanomaterials.
摘要翻译：本发明涉及形成碳纳米材料或半导体纳米材料的方法。该方法包括提供基底并将分子前体附着到基底上。分子前体包括用于连接到底物的表面结合基团和用于附着含金属的物质的结合基团。含金属的物质选自金属阳离子，金属化合物或金属或金属氧化物纳米颗粒，以形成金属化的分子前体。然后对金属化分子前体进行热处理以提供形成碳纳米材料或半导体纳米材料的催化部位。金属化分子前体的加热在适合于碳纳米材料或半导体纳米材料的化学气相沉积的条件下进行。

55. 发明申请

US20110198313A1 METHOD FOR THE CONTROLLED GROWTH OF A GRAPHENE FILM 有权
标题翻译：石墨膜的控制生长方法
公开(公告)号：US20110198313A1
公开(公告)日：2011-08-18
申请号：US13124413
申请日：2009-10-16
申请人： Laurent Baraton , Costel-Sorin Cojocaru , Didier Pribat
发明人： Laurent Baraton , Costel-Sorin Cojocaru , Didier Pribat
IPC分类号： B05D5/12 , B05D3/10 , B05D3/06 , B05D3/02 , C23C14/48 , C23C14/58 , B32B37/14 , B32B38/10
CPC分类号： C23C16/26 , C23C16/0281 , C23C16/56 , C30B25/02 , C30B29/02
摘要： The invention relates to a controlled graphene film growth process characterized in that it comprises the following steps: the production on the surface of a substrate (S1) of a layer of a metal having with carbon a phase diagram such that above a molar concentration threshold ratio CM/CM+CC, where CM is the molar metal concentration in a metal/carbon mixture and CC is the molar carbon concentration in said mixture, a homogeneous solid solution is obtained; the exposure of the metal layer to a controlled flux of carbon atoms or carbon-containing radicals or carbon-containing ions at a temperature such that the molar concentration ratio obtained is greater than the threshold ratio so as to obtain a solid solution of carbon in the metal; and an operation for modifying the phase of the mixture into two phases, a metal phase and a graphite phase respectively, leading to the formation of at least a lower graphene film (31) located at the (metal layer incorporating carbon atoms)/substrate interface and an upper graphene film (30) at the surface of the metal layer.
摘要翻译：本发明涉及一种受控石墨烯薄膜生长方法，其特征在于其包括以下步骤：在具有碳的金属层的基底（S1）的表面上生产相图，使得高于摩尔浓度阈值比 CM / CM + CC，其中CM是金属/碳混合物中的摩尔金属浓度，CC是所述混合物中的摩尔碳浓度，获得均匀的固溶体; 在使所获得的摩尔浓度比大于阈值比的温度下将金属层暴露于受控的碳原子或含碳基团或含碳离子的流量，从而获得碳的固溶体金属; 以及分别将金属相和石墨相改变为两相的相的操作，导致至少形成位于（含有碳原子的金属层）/基板界面的至少一个下部石墨烯膜（31）和在金属层表面的上部石墨烯膜（30）。

56. 发明申请

US20110038134A1 PREVENTING OR MITIGATING GROWTH FORMATIONS ON METAL FILMS 审中-公开
标题翻译：预防或减轻金属膜生长发育
公开(公告)号：US20110038134A1
公开(公告)日：2011-02-17
申请号：US12937389
申请日：2008-06-30
申请人： John W. Osenbach
发明人： John W. Osenbach
IPC分类号： H05K7/18
CPC分类号： H01L23/49866 , C25D3/30 , C30B7/12 , C30B28/04 , C30B29/02 , C30B29/62 , H01L2924/0002 , H01L2924/00
摘要： The disclosure, in one aspect, provides an electronics package 100 comprising comprises a substrate 105 and a metal film 110 plated to a surface 107 of the substrate. The metal film has a polycrystalline structure of grains 120 having substantially anisotropic crystal unit cell dimensions. One dimension 130 of the crystal unit cells 125 are oriented in a direction 135 that is substantially perpendicular to the substrate surface for at least about 80 percent of the grains. Metal atoms of the metal film have a slower lattice diffusion coefficient along the perpendicularly-oriented unit cell dimension than along others of the unit cell dimensions 132, 134.
摘要翻译：在一个方面，本公开提供一种电子封装件100，其包括衬底105和镀在衬底表面107上的金属膜110。金属膜具有具有基本上各向异性的晶体单元尺寸的晶粒120的多晶结构。晶体单元125的一个尺寸130在至少大约80％的晶粒基本垂直于衬底表面的方向135上取向。金属膜的金属原子沿着垂直取向的单元尺寸具有比单元电池尺寸132,134中的其它单元尺寸更慢的晶格扩散系数。

57. 发明申请

US20110005455A1 Method for Manufacturing a Mono-Crystalline Layer on a Substrate 审中-公开
标题翻译：在基板上制造单晶层的方法
公开(公告)号：US20110005455A1
公开(公告)日：2011-01-13
申请号：US12832450
申请日：2010-07-08
申请人： Ruben Lieten , Stefan Degroote
发明人： Ruben Lieten , Stefan Degroote
IPC分类号： C30B23/08
CPC分类号： C30B29/08 , C30B23/02 , C30B29/02 , H01L21/02381 , H01L21/02532 , H01L21/02631
摘要： The present invention is related to a method for growing a layer of a mono-crystalline material on a substrate comprising loading a substrate having an exposed area made of a first mono-crystalline material in a process chamber, supplying a beam of neutral species of a second material towards the substrate in the presence of a diffusion limiting gas, such that the pressure in the process chamber is between 1×10−6 torr and 1×10−4 torr, so that the neutral species of the second material are adsorbed on the exposed area, thereby growing a mono-crystalline layer of said second material overlying and in contact with the first mono-crystalline material wherein said diffusion limiting gas is a non-reactive gas.
摘要翻译：本发明涉及一种用于在衬底上生长单晶材料层的方法，包括在处理室中装载具有由第一单晶材料制成的暴露区域的衬底，提供一束中性物质在扩散限制气体的存在下朝向衬底的第二材料，使得处理室中的压力在1×10 -6乇和1×10 -4乇之间，使得第二材料的中性物质被吸附在暴露的区域，从而生长所述第二材料的单晶层，其覆盖并与第一单晶材料接触，其中所述扩散限制气体是非反应性气体。

58. 发明申请

US20100316874A1 FABRICATION METHOD OF BISMUTH SINGLE CRYSTALLINE NANOWIRE 审中-公开
标题翻译：双晶单晶纳米复合材料的制备方法
公开(公告)号：US20100316874A1
公开(公告)日：2010-12-16
申请号：US12521354
申请日：2009-01-21
申请人： Bongsoo Kim , Juneho In
发明人： Bongsoo Kim , Juneho In
IPC分类号： B82B3/00 , B32B15/02 , B82B1/00
CPC分类号： C30B29/02 , C30B23/00 , C30B23/007 , C30B29/60 , Y10T428/2958
摘要： A bismuth single crystalline nanowire is fabricated by vaporizing bismuth powder on a substrate without using a template having nanopores. Instead a simple and reproducible vapor-phase transport process is used. The fabricated bismuth nanowires have high purity and quality with perfect single crystallinity, and can have uniform size and are not coagulated on a single crystalline substrate.
摘要翻译：铋单晶纳米线是通过在不使用具有纳米孔的模板的情况下将基板上的铋粉末汽化来制造的。相反，使用简单且可重复的气相输送方法。制造的铋纳米线具有高纯度和质量，具有完美的单一结晶度，并且可以具有均匀的尺寸，并且不会在单个晶片上凝结。

59. 发明申请

US20100291408A1 Nanostructures including a metal 审中-公开
标题翻译：纳米结构包括金属
公开(公告)号：US20100291408A1
公开(公告)日：2010-11-18
申请号：US12009579
申请日：2008-01-18
申请人： Hyungsoo Choi
发明人： Hyungsoo Choi
IPC分类号： B32B15/02 , B32B15/01
CPC分类号： C30B25/02 , B82Y30/00 , C30B29/02 , C30B29/605 , Y10T428/12993 , Y10T428/24917 , Y10T428/26
摘要： One embodiment includes non-catalyticly forming a nanowire on a substrate from an organometallic vapor without application of any type of reduction agent. The nanowire is grown during this formation in a direction away from the substrate and is freestanding during growth. The nanowire has a first dimension of 500 nanometers or less and a second dimension extending from the substrate to a free end of the nanowire at least 10 times greater than the first dimension. In one form, the organometallic vapor includes copper and the nanowire essentially consists of elemental copper, a copper alloy, or oxide of copper. Alternatively or additionally, the nanowire is of a monocrystalline structure.
摘要翻译：一个实施方案包括在不施加任何类型的还原剂的情况下从有机金属蒸气在衬底上非催化形成纳米线。纳米线在这种形成过程中沿远离基底的方向生长，并且在生长期间是独立的。纳米线具有500纳米或更小的第一尺寸和从基底延伸到纳米线的自由端的第二尺寸比第一尺寸大至少10倍。在一种形式中，有机金属蒸汽包括铜，并且纳米线基本上由元素铜，铜合金或铜的氧化物组成。或者或另外，纳米线是单晶结构的。

60. 发明授权

US07785558B2 Method of manufacturing carbon nanostructure 有权
标题翻译：制造碳纳米结构的方法
公开(公告)号：US07785558B2
公开(公告)日：2010-08-31
申请号：US11587212
申请日：2005-01-28
申请人： Takeshi Hikata
发明人： Takeshi Hikata
IPC分类号： D01F9/12 , D01F9/127 , C09C1/56 , C23C16/00
CPC分类号： C30B29/02 , B01J23/8906 , B01J23/8913 , B01J23/8993 , B01J35/06 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/02 , Y10S977/742
摘要： The present invention relates to a method of manufacturing a carbon nanostructure for growing crystalline carbon by vapor deposition from a crystal growth surface of a catalytic base including a catalytic material, and in particular, to a method of manufacturing a carbon nanostructure where at least two gases including a feedstock gas are brought into contact with the catalytic base simultaneously. Preferably, the at least two gases are constituted by at least one feedstock gas and at least one carrier gas. Preferably, the carrier gas is brought into contact with the crystal growth surface, and the feedstock gas is brought into contact with at least a part of a region except for the crystal growth surface with which the carrier gas has been brought into contact. Preferably, the material gas contains an ion, and further preferably, it contains a carbon ion.
摘要翻译：本发明涉及一种制造碳纳米结构的方法，所述碳纳米结构用于通过气相沉积从包括催化材料的催化剂基底的晶体生长表面生长结晶碳，特别涉及一种制造碳纳米结构的方法，其中至少两种气体包括原料气体同时与催化底物接触。优选地，至少两种气体由至少一种原料气体和至少一种载气构成。优选地，使载气与晶体生长表面接触，并且使原料气体与除载体气体已经接触的晶体生长表面以外的区域的至少一部分接触。优选地，原料气体含有离子，进一步优选含有碳离子。

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