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51. 发明申请

US20150179845A1 SOLID-STATE IMAGING DEVICE, LIGHT DETECTING DEVICE, AND ELECTRONIC APPARATUS 有权
标题翻译：固态成像装置，光检测装置和电子装置
公开(公告)号：US20150179845A1
公开(公告)日：2015-06-25
申请号：US14569248
申请日：2014-12-12
申请人： Sony Corporation
发明人： Atsushi Toda
IPC分类号： H01L31/0352 , H01L27/146 , H04N5/33 , H01L31/0336
CPC分类号： H01L27/14649 , H01L27/14683 , H01L27/14696 , H01L31/035209 , H01L31/109
摘要： A solid-state imaging device includes a Multi-Quantum Wells (MQW) structure which combines and uses a non-Group IV lattice matching-based compound semiconductor with an absolute value of a mismatch ratio of less than 1% on a silicon substrate so as to have sensitivity to at least infrared light.
摘要翻译：一种固态成像装置包括多个量子阱（MQW）结构，其结合并使用在硅衬底上具有小于1％的失配比的绝对值的基于非IV族晶格匹配的化合物半导体，以便至少具有至少红外光的敏感性。

52. 发明授权

US09006786B2 Fin structure of semiconductor device 有权
标题翻译：半导体器件的鳍结构
公开(公告)号：US09006786B2
公开(公告)日：2015-04-14
申请号：US13934992
申请日：2013-07-03
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Kuo-Cheng Ching , Chih-Hao Wang , Zhiqiang Wu , Carlos H. Diaz , Jean-Pierre Colinge
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336 , H01L29/78 , H01L21/02
CPC分类号： H01L29/7848 , H01L21/02107 , H01L21/02123 , H01L21/02175 , H01L21/02233 , H01L21/02274 , H01L21/02282 , H01L21/0262 , H01L21/28238 , H01L21/3065 , H01L21/308 , H01L21/76224 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L21/845 , H01L27/0886 , H01L27/1211 , H01L29/0649 , H01L29/0653 , H01L29/0847 , H01L29/165 , H01L29/66545 , H01L29/66795 , H01L29/6681 , H01L29/7843 , H01L29/7846 , H01L29/785 , H01L29/7851 , H01L29/7856
摘要： The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure protruding from the major surface comprising a lower portion comprising a first semiconductor material having a first lattice constant; an upper portion comprising the first semiconductor material having the first lattice constant; a middle portion between the lower portion and upper portion, wherein the middle portion comprises a second semiconductor material having a second lattice constant different from the first lattice constant; and a pair of notches extending into opposite sides of the middle portion; and an isolation structure surrounding the fin structure, wherein a top surface of the isolation structure is higher than a top surface of the pair of notches.
摘要翻译：本发明涉及鳍状场效应晶体管（FinFET）。示例性FinFET包括包含主表面的衬底; 从主表面突出的翅片结构，包括下部，包括具有第一晶格常数的第一半导体材料; 上部，包括具有第一晶格常数的第一半导体材料; 下部和上部之间的中间部分，其中中间部分包括具有不同于第一晶格常数的第二晶格常数的第二半导体材料; 以及延伸到中间部分的相对侧的一对凹口; 以及围绕所述翅片结构的隔离结构，其中所述隔离结构的顶表面高于所述一对凹口的顶表面。

53. 发明授权

US08969124B2 Method for fabricating Cu—In—Ga—Se film solar cell 有权
标题翻译：制备Cu-In-Ga-Se薄膜太阳能电池的方法
公开(公告)号：US08969124B2
公开(公告)日：2015-03-03
申请号：US14153026
申请日：2014-01-11
申请人： Liuyu Lin , Zhun Zhang
发明人： Liuyu Lin , Zhun Zhang
IPC分类号： H01L21/00 , H01L31/18 , H01L31/0336
CPC分类号： H01L31/1864 , C23C14/0623 , C23C14/3414 , C23C14/3492 , C23C14/352 , H01L31/0322 , H01L31/0336 , H01L31/03923 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method for fabricating a Cu—In—Ga—Se film solar cell is provided. The method comprises: a) fabricating a molybdenum back electrode on a substrate; b) fabricating a Cu—In—Ga—Se absorbing layer on the molybdenum back electrode; c) performing an annealing; d) fabricating an In2Se3 or ZnS buffer layer on the Cu—In—Ga—Se absorbing layer; e) fabricating an intrinsic zinc oxide high impedance layer; f) fabricating an indium tin oxide film low impedance layer on the intrinsic zinc oxide high impedance layer; g) fabricating an aluminum electrode on the indium tin oxide film low impedance layer.
摘要翻译：提供了一种制造Cu-In-Ga-Se膜太阳能电池的方法。该方法包括：a）在衬底上制造钼背电极; b）在钼背电极上制造Cu-In-Ga-Se吸收层; c）进行退火; d）在Cu-In-Ga-Se吸收层上制造In2Se3或ZnS缓冲层; e）制造本征氧化锌高阻抗层; f）在本征氧化锌高阻抗层上制造氧化铟锡薄膜低阻层; g）在铟锡氧化物膜低阻抗层上制造铝电极。

54. 发明授权

US08921691B2 Solar cell and manufacturing method thereof 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08921691B2
公开(公告)日：2014-12-30
申请号：US12922996
申请日：2009-03-19
申请人： Shogo Ishizuka , Shigeru Niki , Nobuaki Kido , Hiroyuki Honmoto
发明人： Shogo Ishizuka , Shigeru Niki , Nobuaki Kido , Hiroyuki Honmoto
IPC分类号： H01L31/0336 , H01L31/0392
CPC分类号： H01L31/03923 , Y02E10/541 , Y02P70/521
摘要： There is provided a solar cell in which a lower electrode layer, a photoelectric conversion layer having a chalcopyrite structure that includes a Group Ib element, a Group IIIb element, and a Group VIb element, and an upper electrode layer are sequentially formed on top of a substrate, wherein the solar cell is provided with a silicate layer between the substrate and the lower electrode layer.
摘要翻译：提供了一种太阳能电池，其中下电极层，具有包含第Ib族元素，IIIb族元素和VIb族元素的黄铜矿结构的光电转换层和上电极层依次形成在衬底，其中所述太阳能电池在所述衬底和所述下电极层之间设置有硅酸盐层。

55. 发明授权

US08901538B2 Nano resonator and manufacturing method thereof 有权
标题翻译：纳米谐振器及其制造方法
公开(公告)号：US08901538B2
公开(公告)日：2014-12-02
申请号：US13846685
申请日：2013-03-18
申请人： Samsung Electronics Co., Ltd.
发明人： Jie Ai Yu , Duck Hwan Kim , In Sang Song , Jing Cui
IPC分类号： H01L31/0336 , H01L31/072 , H01L29/745 , H01L29/76 , H01L21/336 , B81C1/00 , B81B3/00 , H03H3/007 , H03H9/24
CPC分类号： B81C1/00134 , B81B3/0018 , H03H3/0072 , H03H9/2463
摘要： A nano resonator includes a substrate, a first insulating layer disposed on the substrate, a first source disposed on the first insulating layer at a first position, a first drain disposed on the first insulating layer at a second position spaced apart from the first position so that the first drain faces the first source, a first nano-wire channel having a first end connected to the first source and a second end connected to the first drain, and having a doping type and a doping concentration that are identical to a doping type and a doping concentration of the first source and the first drain, and a second nano-wire channel disposed at a predetermined distance from the first nano-wire channel in a direction perpendicular to the substrate or a direction parallel to the substrate.
摘要翻译：纳米谐振器包括衬底，设置在衬底上的第一绝缘层，在第一位置处设置在第一绝缘层上的第一源极，在与第一位置间隔开的第二位置处设置在第一绝缘层上的第一漏极，第一漏极面向第一源极，第一纳米线通道具有连接到第一源极的第一端和连接到第一漏极的第二端，并且具有与掺杂类型相同的掺杂类型和掺杂浓度以及第一源极和第一漏极的掺杂浓度以及与第一纳米线通道在垂直于衬底的方向或平行于衬底的方向设置在预定距离处的第二纳米线通道。

56. 发明授权

US08889468B2 Method and structure for thin film tandem photovoltaic cell 有权
标题翻译：薄膜串联光伏电池的方法和结构
公开(公告)号：US08889468B2
公开(公告)日：2014-11-18
申请号：US13030464
申请日：2011-02-18
申请人： Howard W. H. Lee
发明人： Howard W. H. Lee
IPC分类号： H01L21/203 , H01L31/0336 , H01L31/032 , H01L31/076 , H01L31/0687 , H01L31/18 , H01L31/0725 , H01L31/0296
CPC分类号： H01L31/18 , H01L31/0296 , H01L31/0322 , H01L31/0687 , H01L31/0725 , H01L31/076 , H01L31/1828 , Y02E10/541 , Y02E10/543 , Y02E10/544 , Y02E10/548
摘要： A tandem photovoltaic cell. The tandem photovoltaic cell includes a bifacial top cell and a bottom cell. The top bifacial cell includes a top first transparent conductive oxide material. A top window material underlies the top first transparent conductive oxide material. A first interface region is disposed between the top window material and the top first transparent conductive oxide material. The first interface region is substantially free from one or more entities from the top first transparent conductive oxide material diffused into the top window material. A top absorber material comprising a copper species, an indium species, and a sulfur species underlies the top window material. A top second transparent conductive oxide material underlies the top absorber material. A second interface region is disposed between the top second transparent conductive oxide material and the top absorber material. The bottom cell includes a bottom first transparent conductive oxide material. A bottom window material underlies the first bottom transparent conductive oxide material. A bottom absorber material underlies the bottom window material. A bottom electrode material underlies the bottom absorber material. The tandem photovoltaic cell further includes a coupling material free from a parasitic junction between the top cell and the bottom cell.
摘要翻译：串联光伏电池。串联光伏电池包括双面顶部电池和底部电池。顶部双面电池包括顶部第一透明导电氧化物材料。顶部玻璃材料位于顶部第一透明导电氧化物材料的正下方。第一界面区域设置在顶窗材料和顶部第一透明导电氧化物材料之间。第一界面区域基本上不含从扩散到顶部窗口材料中的顶部第一透明导电氧化物材料的一个或多个实体。包括铜物质，铟物质和硫物质的顶部吸收体材料位于顶部窗口材料的正下方。顶部第二透明导电氧化物材料位于顶部吸收体材料的正下方。第二界面区域设置在顶部第二透明导电氧化物材料和顶部吸收材料之间。底部单元包括底部第一透明导电氧化物材料。底部窗材料位于第一底部透明导电氧化物材料的正下方。底部吸收材料位于底部窗口材料的底部。底部电极材料位于底部吸收体材料的下面。串联光伏电池还包括没有顶部电池和底部电池之间的寄生连接的耦合材料。

57. 发明授权

US08872155B2 Nanostructured thin film, surface light source and display apparatus employing nanostructured thin film 有权
标题翻译：纳米结构薄膜，表面光源和采用纳米结构薄膜的显示装置
公开(公告)号：US08872155B2
公开(公告)日：2014-10-28
申请号：US12944294
申请日：2010-11-11
申请人： Seung-hoon Han , Hong-seok Lee , Moon-gyu Han
发明人： Seung-hoon Han , Hong-seok Lee , Moon-gyu Han
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , B82Y20/00 , H01L33/06
CPC分类号： B82Y20/00 , H01L33/06
摘要： A nanostructured thin film used in a surface light source, including a dielectric layer, and nanostructures that are arranged periodically in the dielectric layer, wherein light emitted from the nanostructured thin film has directivity according to the nanostrucures.
摘要翻译：用于包括电介质层的表面光源的纳米结构薄膜和在电介质层中周期性排列的纳米结构，其中从纳米结构薄膜发射的光具有根据纳米结构的方向性。

58. 发明申请

US20140315348A1 THIN FILM SOLAR CELL 审中-公开
标题翻译：薄膜太阳能电池
公开(公告)号：US20140315348A1
公开(公告)日：2014-10-23
申请号：US14362065
申请日：2012-11-30
申请人： Showa Shell Sekiyu K.K.
发明人： Hiroki Sugimoto , Noriyuki Sakai , Homare Hiroi
IPC分类号： H01L31/18 , H01L31/0336 , H01L31/032
CPC分类号： H01L31/18 , H01L31/0322 , H01L31/0326 , H01L31/0336 , H01L31/0749 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： A thin-film solar cell which uses an InS-based buffer layer is produced by forming a metal back electrode layer on a substrate, forming a p-type light absorption layer on the metal back electrode layer, oxidizing the p-type light absorption layer surface, forming an InS-based buffer layer as an n-type high resistance buffer layer on the oxidized p-type light absorption layer, and forming an n-type transparent conductive film on the InS-based buffer layer.
摘要翻译：通过在基板上形成金属背电极层，在金属背电极层上形成p型光吸收层，对p型光吸收层进行氧化而制造使用InS系缓冲层的薄膜太阳能电池在氧化的p型光吸收层上形成作为n型高电阻缓冲层的InS系缓冲层，在InS系缓冲层上形成n型透明导电膜。

59. 发明授权

US08866193B2 Method for fabricating a monolithic integrated composite group III-V and group IV semiconductor device 有权
标题翻译：单片组合III-V组和IV组装置
公开(公告)号：US08866193B2
公开(公告)日：2014-10-21
申请号：US14049564
申请日：2013-10-09
申请人： International Rectifier Corporation
发明人： Michael A. Briere
IPC分类号： H01L31/0328 , H01L31/0336 , H01L31/109 , H01L31/072 , H01L29/739
CPC分类号： H01L27/0629 , H01L21/8221 , H01L21/8258 , H01L23/481 , H01L23/535 , H01L27/0605 , H01L27/0694 , H01L29/16 , H01L29/2003 , H01L29/205 , H01L29/778 , H01L29/7786 , H01L29/78 , H01L29/861 , H01L29/872 , H01L2924/0002 , H03K17/567 , H01L2924/00
摘要： According to one disclosed embodiment, a monolithic vertically integrated composite device comprises a double sided semiconductor substrate having first and second sides, a group IV semiconductor layer formed over the first side and comprising at least one group IV semiconductor device, and a group III-V semiconductor body formed over the second side and comprising at least one group III-V semiconductor device electrically coupled to the at least one group IV semiconductor device. The composite device may further comprise a substrate via and/or a through-wafer via providing electric coupling. In one embodiment, the group IV semiconductor layer may comprise an epitaxial silicon layer, and the at least one group IV semiconductor device may be a combined FET and Schottky diode (FETKY) fabricated on the epitaxial silicon layer. In one embodiment, the at least one group semiconductor device may be a III-nitride high electron mobility transistor (HEMT).
摘要翻译：根据一个公开的实施例，单片垂直集成复合器件包括具有第一和第二侧面的双面半导体衬底，在第一侧上形成的包含至少一个IV族半导体器件的IV族半导体层，以及III-V族半导体本体形成在第二侧上并且包括电耦合到至少一个IV族半导体器件的至少一个III-V族半导体器件。复合器件还可以通过提供电耦合来包括衬底通孔和/或贯通晶片。在一个实施例中，IV族半导体层可以包括外延硅层，并且该至少一个IV族半导体器件可以是在外延硅层上制造的组合FET和肖特基二极管（FETKY）。在一个实施例中，所述至少一个组半导体器件可以是III族氮化物高电子迁移率晶体管（HEMT）。

60. 发明申请

US20140252345A1 SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体膜和半导体器件
公开(公告)号：US20140252345A1
公开(公告)日：2014-09-11
申请号：US14196281
申请日：2014-03-04
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masashi TSUBUKU , Ryosuke WATANABE
IPC分类号： H01L31/0336 , H01L33/18
CPC分类号： G01R31/2656 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L22/12 , H01L22/14 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： An oxide semiconductor film having high stability with respect to light irradiation or a semiconductor device having high stability with respect to light irradiation is provided. One embodiment of the present invention is a semiconductor film including an oxide in which light absorption is observed by a constant photocurrent method (CPM) in a wavelength range of 400 nm to 800 nm, and in which an absorption coefficient of a defect level, which is obtained by removing light absorption due to a band tail from the light absorption, is lower than or equal to 5×10−2/cm. Alternatively, a semiconductor device is manufactured using the semiconductor film.
摘要翻译：提供了相对于光照射具有高稳定性的氧化物半导体膜或者相对于光照射具有高稳定性的半导体器件。本发明的一个实施方案是包括氧化物的半导体膜，其中通过在400nm至800nm的波长范围内的恒定光电流方法（CPM）观察到光吸收，并且其中缺陷水平的吸收系数是通过从光吸收中除去带尾的光吸收而得到的，小于或等于5×10-2 / cm。或者，使用半导体膜制造半导体器件。

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