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51. 发明授权

US08692441B2 Method for forming an ultrasonic transducer, and associated apparatus 有权
标题翻译：用于形成超声换能器的方法及相关装置
公开(公告)号：US08692441B2
公开(公告)日：2014-04-08
申请号：US13907046
申请日：2013-05-31
申请人： Research Triangle Institute
发明人： David Dausch , Scott H. Goodwin
IPC分类号： H01L41/047 , H01L41/053 , H01L41/107 , H03H9/15 , B31D3/00
CPC分类号： H01L41/0474 , B06B1/0607 , G10K11/004 , H01L41/0973 , H01L41/29 , H01L41/293 , H01L41/332
摘要： A method is provided for forming a piezoelectric ultrasonic transducer apparatus having a first electrode deposited on a dielectric layer disposed on a primary substrate. A piezoelectric material is deposited between the first electrode and a second electrode, to form a transducer device. At least the piezoelectric material is patterned such that a portion of the first electrode extends laterally outward therefrom. The primary substrate and the dielectric layer are etched to form a first via extending to the laterally outward portion of the first electrode, and a first conductive material is deposited to substantially fill the first via and form an electrically-conductive engagement with the laterally outward portion of the first electrode. The primary substrate is etched to define a second via extending therethrough, wherein the second via is laterally spaced apart from the first via. An associated method and apparatus are also provided.
摘要翻译：提供一种用于形成压电超声换能器装置的方法，该装置具有沉积在设置在初级基底上的电介质层上的第一电极。压电材料沉积在第一电极和第二电极之间，以形成换能器装置。至少压电材料被图案化，使得第一电极的一部分从其横向向外延伸。蚀刻初级衬底和电介质层以形成延伸到第一电极的横向向外部分的第一通孔，并且沉积第一导电材料以基本上填充第一通孔并与横向向外部分形成导电接合的第一电极。蚀刻初级衬底以限定延伸穿过其中的第二通孔，其中第二通孔与第一通路横向间隔开。还提供了相关联的方法和装置。

52. 发明授权

US08575820B2 Stacked bulk acoustic resonator 有权
标题翻译：堆叠体声共振器
公开(公告)号：US08575820B2
公开(公告)日：2013-11-05
申请号：US13074094
申请日：2011-03-29
申请人： Alexandre Augusto Shirakawa , Paul Bradley , Dariusz Burak , Stefan Bader , Chris Feng
发明人： Alexandre Augusto Shirakawa , Paul Bradley , Dariusz Burak , Stefan Bader , Chris Feng
IPC分类号： H01L41/047 , H03H9/15
CPC分类号： H03H3/02 , H03H9/132 , H03H9/585 , H03H2003/0428
摘要： A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric layer stacked on the second electrode, and a third electrode stacked on the second piezoelectric layer. The stacked bulk acoustic resonator further includes an inner raised region formed in an inner portion on a surface of at least one of the first, second and third electrodes, and an outer raised region formed along an outer perimeter on the surface of the at least one of the first, second or third electrodes. The outer raised region surrounds the inner raised region and defines a gap between the inner raised region and the outer raised region.
摘要翻译：层叠的体声波谐振器包括堆叠在第一电极上的第一压电层，堆叠在第一压电层上的第二电极; 堆叠在第二电极上的第二压电层和堆叠在第二压电层上的第三电极。层叠的体声波谐振器还包括形成在第一，第二和第三电极中的至少一个的表面上的内部的内部凸起区域，以及沿着至少一个的表面上的外周边形成的外部凸起区域的第一，第二或第三电极。外部凸起区域围绕内部凸起区域并且在内部升高区域和外部凸起区域之间限定间隙。

53. 发明授权

US08487511B2 Protected resonator 有权
标题翻译：保护谐振器
公开(公告)号：US08487511B2
公开(公告)日：2013-07-16
申请号：US13549676
申请日：2012-07-16
申请人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
发明人： Rajarishi Sinha , L. Richard Carley , Louis Caley Chomas , Hugo Safar
IPC分类号： H01L41/09 , H03H9/15
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译：一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。该结构具有至少部分地设置在两个电极之间的压电层。该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖。

54. 发明授权

US08421558B2 Boundary acoustic wave device having an interdigital transducer electrode in a groove 有权
标题翻译：边界声波装置在沟槽中具有叉指式换能器电极
公开(公告)号：US08421558B2
公开(公告)日：2013-04-16
申请号：US12752167
申请日：2010-04-01
申请人： Takashi Yamane
发明人： Takashi Yamane
IPC分类号： H03H9/13 , H03H9/145 , H03H9/15 , H03H9/25
CPC分类号： H03H9/14541 , H03H9/02834
摘要： A boundary acoustic wave device includes a piezoelectric substrate having an upper surface in which grooves are provided, IDT electrodes which are at least partially embedded in the grooves in the upper surface of the piezoelectric substrate in a thickness direction of the IDT electrodes, and first and second dielectric layers stacked on the upper surface of the piezoelectric substrate. The second dielectric layer has an acoustic velocity greater than that of the first dielectric layer.
摘要翻译：一种弹性边界波装置包括具有上表面的压电基板，其中设有槽，IDT电极至少部分地嵌入在压电基板的上表面中沿IDT电极的厚度方向的槽中，以及第一和第二电介质层堆叠在压电基板的上表面上。第二电介质层的声速比第一电介质层大。

55. 发明授权

US08410865B2 Surface acoustic wave filter and duplexer using the same 有权
标题翻译：表面声波滤波器和双工器使用相同
公开(公告)号：US08410865B2
公开(公告)日：2013-04-02
申请号：US12827091
申请日：2010-06-30
申请人： Toru Jibu , Shoji Okamoto , Yosuke Hamaoka , Hiroyuki Nakamura
发明人： Toru Jibu , Shoji Okamoto , Yosuke Hamaoka , Hiroyuki Nakamura
IPC分类号： H03H9/15 , H01L41/04
CPC分类号： H03H9/02992 , H03H9/725
摘要： A SAW filter includes a piezoelectric body, an IDT electrode on the piezoelectric body, and signal wiring electrically connected to the IDT electrode. The signal wiring has a thickness not less than a skin depth specified based on the frequency of a signal passing through the signal wiring and the electrical conductivity of the signal wiring. As a result, the signal wiring has low propagation loss of the signal passing through it, so that the SAW filter has excellent transmission characteristics.
摘要翻译： SAW滤波器包括压电体，压电体上的IDT电极和与IDT电极电连接的信号线。信号布线的厚度不小于根据通过信号布线的信号的频率和信号布线的导电率而指定的皮肤深度。结果，信号线路的信号传播损耗低，SAW滤波器具有优异的传输特性。

56. 发明授权

US08384497B2 Piezoelectric resonator structure having an interference structure 有权
标题翻译：具有干涉结构的压电谐振器结构
公开(公告)号：US08384497B2
公开(公告)日：2013-02-26
申请号：US12641697
申请日：2009-12-18
申请人： Hao Zhang
发明人： Hao Zhang
IPC分类号： H03H9/15 , H03H9/13 , H03H9/54
CPC分类号： H03H9/175 , H03H9/02118
摘要： A piezoelectric resonator structure, comprising: (i) a substrate, (ii) an acoustic mirror, (iii) a first electrode, (iv) a piezoelectric layer, and (v) a second electrode, wherein each of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer, and the second electrode has a top surface and a bottom surface, a first end portion and an opposite, second end portion, and a body portion defined therebetween, wherein the overlapped area of body portions of the substrate, the acoustic mirror, the first electrode, the piezoelectric layer and the second electrode is defined as an active area A. A plurality of air gaps and interference structures is formed at the first end portion of the piezoelectric layer and the second electrode, and the second end portion of the piezoelectric layer and the second electrode to enhance the performance of the piezoelectric resonator.
摘要翻译：一种压电谐振器结构，包括：（i）衬底，（ii）声反射镜，（iii）第一电极，（iv）压电层和（v）第二电极，其中每个衬底，声学第一电极，压电层和第二电极具有顶表面和底表面，第一端部和相对的第二端部以及限定在其间的主体部分，其中，主体部分的重叠区域基板，声反射镜，第一电极，压电层和第二电极被定义为有源区A.在压电层和第二电极的第一端部处形成多个气隙和干涉结构，以及压电层和第二电极的第二端部，以增强压电谐振器的性能。

57. 发明授权

US08368487B1 Thin-film bulk acoustic resonators having multi-axis acoustic wave propagation therein 有权
标题翻译：具有多轴声波传播的薄膜体声共振器
公开(公告)号：US08368487B1
公开(公告)日：2013-02-05
申请号：US12713940
申请日：2010-02-26
申请人： Logan D. Sorenson
发明人： Logan D. Sorenson
IPC分类号： H03H9/15 , H03H9/13 , H03H9/54
CPC分类号： H03H9/17 , H03H2009/155 , H03H2009/241
摘要： Microelectromechanical resonators include a resonator body anchored to a surrounding substrate by at least one support that holds the resonator body opposite a recess in the substrate. The resonator body has first and second pluralities of interdigitated drive and sense electrodes thereon. The first plurality of interdigitated drive and second electrodes are aligned to a first axis of acoustic wave propagation in the resonator body when the resonator body is operating at resonance. In contrast, the second plurality of interdigitated drive and sense electrodes are aligned to a second axis of acoustic wave propagation in the resonator body. This second axis of acoustic wave propagation preferably extends at an angle in a range from 60° to 120° relative to the first axis and, more preferably, at an angle of 90° relative to the first axis. The resonator body may also be configured to have a first side that is oriented at a 45° angle relative to the first axis of acoustic wave propagation and oriented at a 45° angle relative to the second axis of acoustic wave propagation.
摘要翻译：微机电谐振器包括通过将谐振器本体保持在衬底相对的凹部的至少一个支撑件固定到周围衬底的谐振器体。谐振器体在其上具有第一和第二多个交错的驱动和感测电极。当谐振器本体在谐振操作时，第一组多个交叉驱动和第二电极与谐振器体中的声波传播的第一轴对准。相比之下，第二多个叉指驱动和感测电极与谐振器主体中的声波传播的第二轴对准。声波传播的第二轴优选相对于第一轴线以60°至120°的角度延伸，更优选地相对于第一轴线以90°的角度延伸。谐振器主体还可以被配置为具有相对于声波传播的第一轴成45°角定向的第一侧，并相对于声波传播的第二轴成45°角定向。

58. 发明授权

US08258891B2 Acoustic wave device, duplexer, communication module, communication apparatus, and manufacturing method for acoustic wave device 有权
标题翻译：声波装置，双工器，通信模块，通信装置和声波装置的制造方法
公开(公告)号：US08258891B2
公开(公告)日：2012-09-04
申请号：US12608397
申请日：2009-10-29
申请人： Michio Miura , Suguru Warashina , Takashi Matsuda , Shogo Inoue , Kazunori Inoue , Satoru Matsuda
发明人： Michio Miura , Suguru Warashina , Takashi Matsuda , Shogo Inoue , Kazunori Inoue , Satoru Matsuda
IPC分类号： H03H9/25 , H03H9/15 , H03H9/70 , H03H9/72 , H03H3/02 , H03H3/08 , H03H3/04 , H03H3/10
CPC分类号： H03H3/10 , H03H9/0222 , H03H9/25 , Y10T29/42 , Y10T29/49005
摘要： An acoustic wave device includes a piezoelectric substrate, interdigital electrodes arranged on the piezoelectric substrate, a first dielectric element arranged between the interdigital electrodes, a second dielectric element that covers the interdigital electrodes and the first dielectric element, and an adjustment element that has been formed on the first dielectric element. The adjustment element has been formed from a material whose specific gravity is greater than that of the first dielectric element and that of the second dielectric element.
摘要翻译：声波装置包括：压电基板，布置在压电基板上的叉指电极，布置在叉指电极之间的第一电介质元件，覆盖指状电极和第一电介质元件的第二电介质元件和已形成的调节元件在第一电介质元件上。调整元件由比重大于第一电介质元件和第二电介质元件的比重的材料形成。

59. 发明授权

US08085115B2 Piezoelectric thin film resonator, filter, and communication apparatus 有权
标题翻译：压电薄膜谐振器，滤波器和通信装置
公开(公告)号：US08085115B2
公开(公告)日：2011-12-27
申请号：US12397932
申请日：2009-03-04
申请人： Shinji Taniguchi , Tokihiro Nishihara , Tsuyoshi Yokoyama , Masafumi Iwaki , Motoaki Hara , Masanori Ueda
发明人： Shinji Taniguchi , Tokihiro Nishihara , Tsuyoshi Yokoyama , Masafumi Iwaki , Motoaki Hara , Masanori Ueda
IPC分类号： H03H9/54 , H03H9/13 , H03H9/15
CPC分类号： H03H9/132 , H03H9/02133 , H03H9/173
摘要： A piezoelectric thin film resonator includes a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the substrate and the lower electrode, and an upper electrode formed on the piezoelectric film and opposing the lower electrode, an upper electrode formed on the piezoelectric film. The upper electrode has a main portion and an extended portion connected to the main portion, the main portion opposing the lower electrode and an opening disposed between the substrate and the lower electrode, the extended portion having a portion which opposes the opening and the substrate.
摘要翻译：压电薄膜谐振器包括基板，形成在基板上的下电极，形成在基板和下电极上的压电膜，以及形成在压电膜上并与下电极相对的上电极，形成在基板上的上电极压电薄膜。上部电极具有与主体部分连接的主要部分和延伸部分，与下部电极相对的主要部分和设置在基板和下部电极之间的开口，延伸部分具有与开口和基板相对的部分。

60. 发明申请

US20110279187A1 HBAR RESONATOR WITH HIGH TEMPERATURE STABILITY 有权
标题翻译：具有高温稳定性的HBAR谐振器
公开(公告)号：US20110279187A1
公开(公告)日：2011-11-17
申请号：US12995805
申请日：2009-05-29
申请人： Sylvain Ballandras , Dorian Gachon
发明人： Sylvain Ballandras , Dorian Gachon
IPC分类号： H03H9/15 , H03B5/32 , H03H9/54 , H01L41/22
CPC分类号： H03H9/02078 , H03H9/02031 , H03H9/02047 , H03H9/172
摘要： The invention relates to a resonator of the harmonic bulk acoustic resonator IIBAR type, comprising a piezoelectric transducer (6) clamped between two electrodes (4, 8) with a strong electroacoustic coupling, cut according to a first cutting angle Θ1, and an acoustic substrate (10) with a working frequency acoustic quality coefficient at least equal to 5.1012, cut according to a second cutting angle Θ2 with at least one shearing vibration mode. The transducer and the substrate are arranged in such a way that the polarisation direction of the shearing mode of the transducer and the polarisation direction of the shearing of the substrate are aligned, and the second cutting angle Θ2 is such that the temperature coefficient of the frequency of the first order CTFB1 corresponding to the shearing mode and to the second cutting angle Θ2 is zero with inversion of the sign thereof on either side of, or equal to, a bias.
摘要翻译：本发明涉及一种谐波体声波谐振器IIBAR型谐振器，包括一个压电换能器（6），它夹在具有强电耦合的两个电极（4,8）之间，按照第一切割角度θ1切割，以及一个声学基片（10），工作频率声音质量系数至少等于5.1012，根据具有至少一个剪切振动模式的第二切割角度θ2切割。传感器和基板被布置成使得换能器的剪切模式的偏振方向和基板的剪切的偏振方向对齐，并且第二切割角度θ2使得频率的温度系数对应于剪切模式的第一级CTFB1和第二切割角Θ2的第一级CTFB1为零，并且在偏置的任一侧上等于或者等于它的符号。

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