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1. 发明授权

US09653676B2 Method for manufacturing piezoelectric device 有权
公开(公告)号：US09653676B2
公开(公告)日：2017-05-16
申请号：US14259369
申请日：2014-04-23
申请人： Murata Manufacturing Co., Ltd.
发明人： Kiyoto Araki
IPC分类号： H01L41/29 , H03H3/02 , H01L21/311 , H03H9/17 , H01L41/047 , H01L41/332 , H01L41/312 , H03H9/02 , H01L41/113 , G01C19/5783
CPC分类号： H01L41/29 , G01C19/5783 , H01L21/31144 , H01L41/0475 , H01L41/1138 , H01L41/312 , H01L41/332 , H03H3/02 , H03H9/02047 , H03H9/173 , H03H2003/021 , Y10T29/42
摘要： A method for manufacturing a piezoelectric device including a piezoelectric thin film, a support member, a first electrode, and a cavity formed at a support member side of the first electrode between the piezoelectric thin film and the support member includes forming a sacrificial layer in an area to define the cavity, forming an etching adjustment layer which adjusts progress of etching in a region where the first electrode is exposed to a side of the piezoelectric thin film, simultaneously forming a through hole through which a portion of the sacrificial layer is exposed to the side of the piezoelectric thin film and an opening which the first electrode is exposed to the side of the piezoelectric thin film by etching the piezoelectric thin film and the etching adjustment layer, and removing the sacrificial layer through the through hole.

2. 发明授权

US09450563B2 Acoustic wave bandpass filter comprising integrated acoustic guiding 有权
标题翻译：声波带通滤波器，包括集成声导
公开(公告)号：US09450563B2
公开(公告)日：2016-09-20
申请号：US13879598
申请日：2011-10-11
申请人： Marie Gorisse , Alexandre Reinhardt
发明人： Marie Gorisse , Alexandre Reinhardt
IPC分类号： H03H9/64 , H03H9/02 , H03H9/56 , H03H9/54 , H03H9/00
CPC分类号： H03H9/6433 , H03H9/0033 , H03H9/0095 , H03H9/02015 , H03H9/02047 , H03H9/02086 , H03H9/02543 , H03H9/02653 , H03H9/02818 , H03H9/547 , H03H9/564 , H03H9/6436 , H03H9/6453
摘要： An acoustic wave bandpass filter comprises at least an input first acoustic wave resonator with an output surface, and an output second acoustic wave resonator with an input surface, said resonators being coupled to each other along a set direction, the input and output surfaces being substantially opposite, and at least one first phononic crystal structure between said input and output resonators and/or a second phonic crystal structure at the periphery of said resonators so as to guide the acoustic waves, generated by said input resonator, toward said output resonator along said set direction, the resonators ensuring an impedance conversion and/or a mode conversion.
摘要翻译：声波带通滤波器至少包括具有输出表面的输入第一声波谐振器和具有输入表面的输出第二声波谐振器，所述谐振器沿着设定方向彼此耦合，所述输入和输出表面基本上所述输入和输出谐振器之间的至少一个第一声子晶体结构和/或所述谐振器周围的第二声子晶体结构，以便将由所述输入谐振器产生的声波沿着所述输入谐振器设定方向，谐振器确保阻抗转换和/或模式转换。

3. 发明授权

US08810106B2 HBAR resonator with a high level of integration 有权
标题翻译： HBAR谐振器具有较高的集成度
公开(公告)号：US08810106B2
公开(公告)日：2014-08-19
申请号：US12995572
申请日：2009-05-29
申请人： Sylvain Ballandras , Dorian Gachon
发明人： Sylvain Ballandras , Dorian Gachon
IPC分类号： H03H9/15
CPC分类号： H03H9/02078 , H03H9/02031 , H03H9/02047 , H03H9/172
摘要： The invention relates to a resonator of the high bulk acoustic resonator HBAR type, for operating at a pre-determined working frequency, comprising: a piezoelectric transducer (6), an acoustic substrate (10), a counter-electrode (8) formed by a metal layer adhering to a first face of the transducer (6) and a face of the acoustic substrate (10), and an electrode (4) arranged on a second face of the transducer (6) facing away from the first face of the transducer (6) and the substrate (10). Said resonator is characterized in that the relative arrangement of the transducer (6) and the substrate (10) is such that the polarization direction P of the shearing mode of the transducer (6) and the direction of polarization P of the at least one shearing mode of the substrate (10) corresponding to the second cutting angle θ2 are aligned, and the second cutting angle θ2 of the substrate (10) is such that the temperature coefficient of the frequency of the corresponding first order CTFB1 is a local extremum with an absolute value of less than 20 ppm·K−1, and the variation of CTFB1 from said value of Θ2 is slight with an absolute value of less than 2 ppm·K−1/degree.
摘要翻译：本发明涉及一种用于以预定工作频率工作的高体积声共振器HBAR型谐振器，包括：压电换能器（6），声学衬底（10），对电极（8），由附着在换能器（6）的第一面和声学基板（10）的表面上的金属层和布置在换能器（6）的第二面上的电极（4）换能器（6）和基板（10）。所述谐振器的特征在于，换能器（6）和基板（10）的相对布置使得换能器（6）的剪切模式的偏振方向P和至少一个剪切的极化方向P 与第二切割角度θ相对应的基板（10）的模式对齐，并且基板（10）的第二切割角度＆amp; 2;使得相应一阶CTFB1的频率的温度系数为绝对值小于20ppm·K-1的局部极值，并且CTFB1从所述Θ2值的变化是轻微的，绝对值小于2ppm·K-1 /度。

4. 发明申请

US20140210570A1 PIEZOELECTRIC THIN FILM RESONATOR, FILTER, AND DUPLEXER 有权
标题翻译：压电薄膜共振器，滤波器和双工器
公开(公告)号：US20140210570A1
公开(公告)日：2014-07-31
申请号：US14151694
申请日：2014-01-09
申请人： TAIYO YUDEN CO., LTD.
发明人： Tokihiro NISHIHARA , Takeshi SAKASHITA
IPC分类号： H03H9/70 , H03H9/54
CPC分类号： H03H9/70 , H03H9/02015 , H03H9/02047 , H03H9/02118 , H03H9/131 , H03H9/132 , H03H9/174 , H03H9/175 , H03H9/568 , H03H9/588 , H03H9/589
摘要： A piezoelectric thin film resonator includes: a substrate; a piezoelectric film located on the substrate; a lower electrode and an upper electrode facing each other across at least a part of the piezoelectric film; and an insertion film that is inserted into the piezoelectric film, is located in at least a part of an outer periphery region in a resonance region in which the lower electrode and the upper electrode face each other across the piezoelectric film, and is not located in a center region of the resonance region.
摘要翻译：压电薄膜谐振器包括：基板; 位于所述基板上的压电薄膜; 一个下电极和一个上电极相对于压电薄膜的至少一部分彼此面对; 并且插入到压电膜中的插入膜位于其中下电极和上电极在压电膜上彼此面对的共振区域的外周区域的至少一部分中，并且不位于共振区域的中心区域。

5. 发明授权

US06778038B2 Piezoelectric resonant filter, duplexer, and method of manufacturing same 有权
标题翻译：压电谐振滤波器，双工器及其制造方法
公开(公告)号：US06778038B2
公开(公告)日：2004-08-17
申请号：US10260265
申请日：2002-10-01
申请人： Taku Takeishi , Katsuhiko Gunji , Eiju Komuro
发明人： Taku Takeishi , Katsuhiko Gunji , Eiju Komuro
IPC分类号： H03H970
CPC分类号： H03H9/02047 , H03H9/0523 , H03H9/605 , Y10T29/42
摘要： A piezoelectric resonant filter comprises a chip having a plurality of thin-film piezoelectric resonators, and a mounting substrate on which the chip is mounted. The chip is mounted on the mounting substrate by flip chip bonding. A plurality of bumps provided on the chip are bonded to a plurality of conductors on the mounting substrate by interdiffusion between atoms, in a solid phase, of the respective metals of which the bumps and the conductors are made, without involving melting of the respective metals of which the bumps and the conductors are made. The chip has a series resonator and a parallel resonator each formed of a thin-film piezoelectric resonator. These resonators constitute a ladder filter circuit.
摘要翻译：压电谐振滤波器包括具有多个薄膜压电谐振器的芯片和安装芯片的安装基板。芯片通过倒装芯片接合安装在安装基板上。设置在芯片上的多个凸块通过在形成凸块和导体的相应金属的固相中的原子之间的相互扩散而不涉及相应金属的熔化而在安装基板上的多个导体上结合其中制作了凸块和导体。该芯片具有由薄膜压电谐振器形成的串联谐振器和并联谐振器。这些谐振器构成梯形滤波器电路。

6. 发明申请

US20180309427A1 BULK ACOUSTIC WAVE RESONATOR 审中-公开
公开(公告)号：US20180309427A1
公开(公告)日：2018-10-25
申请号：US15797224
申请日：2017-10-30
申请人： Samsung Electro-Mechanics Co., Ltd
发明人： Tae Yoon KIM , Moon Chul LEE , Yoon Sok PARK
IPC分类号： H03H9/10 , H03H3/02 , H03H9/17 , H03H9/02
CPC分类号： H03H9/1014 , H03H3/02 , H03H9/02047 , H03H9/02157 , H03H9/173
摘要： A bulk acoustic wave resonator includes: support members disposed between air cavities; a resonant part including a first electrode, a piezoelectric layer, and a second electrode sequentially disposed above the air cavities and on the support members; and a wiring electrode connected either one or both of the first electrode and the second electrode, and disposed above one of the air cavities, wherein a width of an upper surface of the support members is greater than a width of a lower surface of the support members, and side surfaces of the support members connecting the upper surface and the lower surface to each other are inclined.

7. 发明申请

US20180097504A1 QUARTZ CRYSTAL BLANK AND QUARTZ CRYSTAL RESONATOR UNIT 有权
公开(公告)号：US20180097504A1
公开(公告)日：2018-04-05
申请号：US15819404
申请日：2017-11-21
申请人： Murata Manufacturing Co., Ltd
发明人： Hiroyuki Yamamoto , Hiroaki Kaida , Masaru Asai
IPC分类号： H03H9/19 , H03H9/10 , H03H9/13
CPC分类号： H03H9/19 , H03H9/02023 , H03H9/02047 , H03H9/0552 , H03H9/1021 , H03H9/132
摘要： A rectangular quartz crystal blank having long sides substantially parallel to a Z′ axis of the quartz crystal blank, and short sides substantially parallel to an X axis of the quartz crystal blank. The quartz crystal blank includes a first center region, a second region and a third region that are adjacent to the first region along a long-side direction, and a fourth region and a fifth region that are adjacent to the first region along a short-side direction. A thickness of the second region and a thickness of the third region are smaller than the thickness of the first region, and/or a thickness of the fourth region and a thickness of the fifth region are smaller than the thickness of the first region, and 12.26≦W/T≦13.02, where W is a length of a short side and T is a thickness.

8. 发明申请

US20180013397A1 BULK ACOUSTIC WAVE FILTER DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20180013397A1
公开(公告)日：2018-01-11
申请号：US15621552
申请日：2017-06-13
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Chang Hyun LIM , Moon Chul LEE , Won HAN , Tae Kyung LEE , Dae Ho KIM
IPC分类号： H03H9/02 , H03H3/02 , H03H9/10 , H03H9/17
CPC分类号： H03H9/02015 , H03H3/02 , H03H9/02047 , H03H9/02118 , H03H9/1007 , H03H9/171 , H03H9/173 , H03H2003/021
摘要： A bulk acoustic wave filter device includes a substrate, a lower electrode on the substrate, a piezoelectric layer covering at least a portion of the lower electrode, and an upper electrode covering at least a portion of the piezoelectric layer. The upper electrode has a density reduction layer disposed on at least a portion thereof, except a central portion of a resonance region of the bulk acoustic wave filter device that deforms and vibrates with the piezoelectric layer during activation of the piezoelectric layer. The density reduction layer has a density lower than a density of other portions of the upper electrode.

9. 发明申请

US20170111028A1 ACOUSTIC RESONATOR STRUCTURE WITH INCLINED C-AXIS PIEZOELECTRIC BULK AND CRYSTALLINE SEED LAYERS 审中-公开
公开(公告)号：US20170111028A1
公开(公告)日：2017-04-20
申请号：US15293082
申请日：2016-10-13
申请人： Qorvo US, Inc.
发明人： Kevin McCarron , John Belsick
IPC分类号： H03H9/205 , H03H9/125 , H03H9/02
CPC分类号： H03H3/02 , C23C14/0036 , C23C14/024 , C23C14/0617 , C23C14/086 , C23C14/226 , C23C14/3442 , C23C14/35 , C23C14/566 , C23C14/568 , C30B25/06 , C30B25/186 , C30B29/403 , H01J37/32715 , H01J37/3408 , H01J37/3417 , H01J37/3447 , H01J37/347 , H01L41/35 , H03H9/02015 , H03H9/02047 , H03H9/02157 , H03H9/125 , H03H9/173 , H03H9/175 , H03H9/205
摘要： Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

10. 发明授权

US08829764B2 HBAR resonator with high temperature stability 有权
标题翻译： HBAR谐振器具有高温稳定性
公开(公告)号：US08829764B2
公开(公告)日：2014-09-09
申请号：US12995805
申请日：2009-05-29
申请人： Sylvain Ballandras , Dorian Gachon
发明人： Sylvain Ballandras , Dorian Gachon
IPC分类号： H03H9/15
CPC分类号： H03H9/02078 , H03H9/02031 , H03H9/02047 , H03H9/172
摘要： The invention relates to a resonator of the harmonic bulk acoustic resonator HBAR type, comprising a piezoelectric transducer (6) clamped between two electrodes (4, 8) with a strong electroacoustic coupling, cut according to a first cutting angle Θ1, and an acoustic substrate (10) with a working frequency acoustic quality coefficient at least equal to 5·1012, cut according to a second cutting angle Θ2 with at least one shearing vibration mode. The transducer and the substrate are arranged in such a way that the polarization direction of the shearing mode of the transducer and the polarization direction of the shearing of the substrate are aligned, and the second cutting angle Θ2 is such that the temperature coefficient of the frequency of the first order CTFB1 corresponding to the shearing mode and to the second cutting angle Θ2 is zero with inversion of the sign thereof on either side of, or equal to, a bias.
摘要翻译：本发明涉及一种谐波体声波谐振器HBAR型谐振器，包括一个压电传感器（6），它夹在具有强电耦合的两个电极（4,8）之间，按照第一切割角度θ1切割，声学基片（10），其工作频率声音质量系数至少等于5·1012，根据具有至少一个剪切振动模式的第二切割角度θ2切割。传感器和基板被布置成使得换能器的剪切模式的偏振方向和基板的剪切的偏振方向对齐，并且第二切割角度θ2使得频率的温度系数对应于剪切模式的第一级CTFB1和第二切割角Θ2的第一级CTFB1为零，并且在偏置的任一侧上等于或者等于它的符号。

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