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    • 64. 发明授权
    • Block connector splitting in logic block of a field programmable gate array
    • 在现场可编程门阵列的逻辑块中的块连接器分离
    • US06838903B1
    • 2005-01-04
    • US10608454
    • 2003-06-26
    • Sinan Kaptanoglu
    • Sinan Kaptanoglu
    • H03K19/177
    • H03K19/17736H03K19/17728
    • A logic block in a field programmable gate array comprises a plurality of clusters of logic devices. At least one of the logic devices in each of the clusters has an input or an output. A first set of interconnect conductors enters the logic block from a first side and forming a programmable intersection with the input or the output of at least one of the logic devices in each of the clusters. A second set of interconnect conductors enters the logic block from a second side and forming a programmable intersection with the input or output of one of the logic devices in each cluster, the first set of interconnect conductors forming a pairwise hardwired connection with the second set of interconnect conductors. An interconnect conductor splitting extension is disposed between the first set of interconnect conductors and the second set of interconnect conductors.
    • 现场可编程门阵列中的逻辑块包括多个逻辑器件群集。 每个集群中的至少一个逻辑设备具有输入或输出。 第一组互连导体从第一侧进入逻辑块,并且形成与每个簇中的至少一个逻辑器件的输入或输出的可编程交叉。 第二组互连导体从第二侧进入逻辑块并且与每个簇中的逻辑器件中的一个的输入或输出形成可编程交叉,第一组互连导体与第二组互连导体形成成对的硬连线连接 互连导体。 互连导体分裂延伸部设置在第一组互连导体和第二组互连导体之间。
    • 67. 发明申请
    • Field programmable gate array and microcontroller system-on-a-chip
    • 现场可编程门阵列和微控制器片上系统
    • US20040232942A1
    • 2004-11-25
    • US10821533
    • 2004-04-08
    • Actel Corporation
    • Arunangshu KunduArnold GoldfeinWilliam C. PlantsDavid Hightower
    • H03K019/177
    • G06F15/7842G06F15/7867
    • A system-on-a-chip integrated circuit has a field programmable gate array core having logic clusters, static random access memory modules, and routing resources, a field programmable gate array virtual component interface translator having inputs and outputs, wherein the inputs are connected to the field programmable gate array core, a microcontroller, a microcontroller virtual component interface translator having input and outputs, wherein the inputs are connected to the microcontroller, a system bus connected to the outputs of the field programmable gate array virtual component interface translator and also to the outputs of said microcontroller virtual component interface translator, and direct connections between the microcontroller and the routing resources of the field programmable gate array core.
    • 片上系统集成电路具有具有逻辑集群,静态随机存取存储器模块和路由资源的现场可编程门阵列核心,具有输入和输出的现场可编程门阵列虚拟组件接口转换器,其中输入被连接 到现场可编程门阵列核心,微控制器,具有输入和输出的微控制器虚拟组件接口转换器,其中输入连接到微控制器,连接到现场可编程门阵列虚拟组件接口转换器的输出的系统总线,以及 到所述微控制器虚拟组件接口转换器的输出,以及微控制器与现场可编程门阵列核心的路由资源之间的直接连接。
    • 69. 发明授权
    • Dielectric-polysilicon-dielectric-polysilicon-dielectric antifuse for
field programmable logic application
    • 用于现场可编程逻辑应用的介质 - 多晶硅 - 介电多晶硅 - 电介质反熔丝
    • US6150705A
    • 2000-11-21
    • US571615
    • 1995-12-13
    • Wenn-Jei Chen
    • Wenn-Jei Chen
    • H01L23/525H01L29/00
    • H01L23/5252H01L2924/0002H01L2924/3011Y10S148/055
    • A novel antifuse structure includes a novel antifuse material layer comprises a first dielectric layer, a first polysilicon layer (which may optionally be lightly doped) disposed over the first dielectric layer, and a second dielectric layer disposed over the first polysilicon layer. The dielectric layers may be formed of silicon nitride, silicon dioxide, silicon oxynitride and combinations of the foregoing. Additional layers may also be included to form D/P/D/P/D, D/P/D/a-Si/D sandwiches, and the like. The polysilicon layer provides the ability to control the breakdown voltage of the antifuse through control of the doping level while maintaining a relatively large thickness of the antifuse material layer resulting in low capacitance for the antifuse. The antifuse material layer is compatible with high temperature processes (500.degree. C.-950.degree. C.) and may be carried out in the range of 400.degree. C.-950.degree. C. making it compatible with a wide range of processes.
    • 一种新颖的反熔丝结构包括一种新颖的反熔丝材料层,其包括第一介电层,设置在第一介电层上的第一多晶硅层(其可任选地是轻掺杂的)和设置在第一多晶硅层上的第二介电层。 电介质层可以由氮化硅,二氧化硅,氮氧化硅以及前述的组合形成。 还可以包括另外的层以形成D / P / D / P / D,D / P / D / a-Si / D三明治等。 多晶硅层提供通过控制掺杂水平来控制反熔丝的击穿电压的能力,同时保持反熔丝材料层的相对较大的厚度,从而导致反熔丝的低电容。 反熔丝材料层与高温工艺(500℃〜950℃)兼容,可在400℃〜950℃的范围内进行,使其与广泛的工艺相容。
    • 70. 发明授权
    • Multiple logic family compatible output driver
    • 多逻辑系列兼容输出驱动器
    • US5952847A
    • 1999-09-14
    • US673701
    • 1996-06-25
    • William C. PlantsGregory W. Bakker
    • William C. PlantsGregory W. Bakker
    • H01L29/78H01L21/8234H01L27/088H03K19/0175H03K19/0185
    • H03K19/018521
    • The output buffer circuit according to the present invention is connected to an I/O pad of the integrated circuit. The output buffer circuit includes an output totem pole, a level shifter and enable logic. The output totem pole has a first input connected to the level shifter and a second input connected to the enable logic. The output of the totem pole is connected to an I/O pad. The totem pole includes a pullup transistor connected to 3.3 volt Vcc and a pulldown transistor connected to ground. In a first embodiment of the invention, the pullup transistor in the totem pole is an N-channel MOS transistor, and in a second embodiment of the invention, the pullup transistor in the totem pole is a P-channel MOS transistor formed in an N-well tied to the 5 volt Vcc. In the first embodiment of the present invention, the N-Channel MOS pullup transistor is turned on by a 5 volt signal from the level shifter. In the second embodiment of the present invention, the P-Channel MOS pullup transistor is turned on by a ground level signal from the level shifter. The enable logic drives the output of the totem pole in response to input signals to the enable logic. The inputs to the enable logic are a Data input, a Global enable input and an Output enable input.
    • 根据本发明的输出缓冲器电路连接到集成电路的I / O焊盘。 输出缓冲电路包括输出图腾柱,电平移位器和使能逻辑。 输出图腾柱具有连接到电平移位器的第一输入端和连接到使能逻辑的第二输入端。 图腾柱的输出连接到I / O焊盘。 图腾柱包括连接到3.3伏Vcc的上拉晶体管和连接到地的下拉晶体管。 在本发明的第一实施例中,图腾柱中的上拉晶体管是N沟道MOS晶体管,在本发明的第二实施例中,图腾柱中的上拉晶体管是形成在N沟道MOS晶体管中的P沟道MOS晶体管 - 连接到5伏Vcc。 在本发明的第一实施例中,N沟道MOS上拉晶体管由来自电平移位器的5伏特信号导通。 在本发明的第二实施例中,P沟道MOS上拉晶体管由来自电平移位器的接地电平信号导通。 响应于使能逻辑的输入信号,使能逻辑驱动图腾柱的输出。 使能逻辑的输入是数据输入,全局使能输入和输出使能输入。