会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • ESD protection structure for I/O pad subject to both positive and negative voltages
    • I / O焊盘的ESD保护结构受到正和负电压的影响
    • US07446378B2
    • 2008-11-04
    • US11027788
    • 2004-12-29
    • Gregory Bakker
    • Gregory Bakker
    • H01L23/62
    • H01L27/0266
    • An ESD protection circuit is disclosed for an n-channel MOS transistor formed in an inner p-well of a triple-well process and connected to an I/O pad that may experience both positive and negative voltages according to the present invention. A first switch connects the p-well containing the n-channel MOS transistor to ground if the voltage at the I/O pad is positive and a second switch connects the p-well containing the n-channel MOS transistor to the I/O pad if the voltage at the I/O pad is negative. A third switch connects the gate of the n-channel MOS transistor to the p-well if it is turned off and a fourth switch connects the gate of the n-channel MOS transistor to VCC if it is turned on.
    • 公开了一种ESD保护电路,用于形成在三阱工艺的内部p阱中的n沟道MOS晶体管,并连接到根据本发明可以经历正和负电压的I / O焊盘。 如果I / O焊盘的电压为正,则第一开关将包含n沟道MOS晶体管的p阱连接到地,而第二开关将包含n沟道MOS晶体管的p阱连接到I / O焊盘 如果I / O焊盘的电压为负。 第三开关将n沟道MOS晶体管的栅极连接到p阱,如果它是截止的,第四个开关将n沟道MOS晶体管的栅极连接到V CC CC 打开。