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61. 发明申请

US20110008918A1 METHODS OF LOW LOSS ELECTRODE STRUCTURES FOR LEDS 有权
标题翻译： LEDs低损耗电极结构的方法
公开(公告)号：US20110008918A1
公开(公告)日：2011-01-13
申请号：US12888379
申请日：2010-09-22
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L33/36
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： Aspects concerning a method of making electrical contact to a region of semiconductor in which one or more LEDs are formed include that a dielectric region can be formed on a p region of the semiconductor, and that a metallic electrode can be formed on (at least partially on) the region of dielectric material. A transparent layer of a material such as Indium Tin Oxide can be used to make ohmic contact between the semiconductor and the metallic electrode, as the metallic electrode is separated from physical contact with the semiconductor by one or more of the dielectric material and the transparent ohmic contact layer (e.g., ITO layer). The dielectric material can enhance total internal reflection of light and reduce an amount of light that is absorbed by the metallic electrode.
摘要翻译：涉及与其中形成一个或多个LED的半导体区域进行电接触的方法的方面包括可以在半导体的ap区域上形成电介质区域，并且金属电极可以形成在（至少部分地）电介质材料的区域。由于金属电极通过一种或多种介电材料和透明欧姆与半导体的物理接触分离，所以可以使用诸如氧化铟锡的材料的透明层来在半导体和金属电极之间形成欧姆接触接触层（例如，ITO层）。介电材料可以增强光的全内反射并减少由金属电极吸收的光量。

62. 发明授权

US07791090B2 GaN based LED having reduced thickness and method for making the same 有权
标题翻译：具有减小厚度的GaN基LED及其制造方法
公开(公告)号：US07791090B2
公开(公告)日：2010-09-07
申请号：US11761223
申请日：2007-06-11
申请人： Steven D. Lester , Frank T. Shum
发明人： Steven D. Lester , Frank T. Shum
IPC分类号： H01L29/205
CPC分类号： H01L33/0079 , H01L33/22
摘要： A device having a carrier, a light-emitting structure, and first and second electrodes is disclosed. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength in the active layer when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The first and second electrodes are bonded to the surfaces of the p-type and n-type GaN layers that are not adjacent to the active layer. The n-type GaN layer has a thickness less than 1.25 μm. The carrier is bonded to the light emitting structure during the thinning of the n-type GaN layer. The thinned light-emitting structure can be transferred to a second carrier to provide a device that is analogous to conventional LEDs having contacts on the top surface of the LED.
摘要翻译：公开了一种具有载体，发光结构以及第一和第二电极的装置。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当来自n型GaN层的电子和空穴以及有源层发射预定波长的光的有源层和 p型GaN层分别结合在一起。第一和第二电极结合到不与有源层相邻的p型和n型GaN层的表面。 n型GaN层的厚度小于1.25μm。在n型GaN层的薄化期间，载体与发光结构结合。减薄的发光结构可以转移到第二载体以提供类似于在LED的顶表面上具有接触的常规LED的装置。

63. 发明授权

US07674639B2 GaN based LED with etched exposed surface for improved light extraction efficiency and method for making the same 失效
标题翻译：具有蚀刻暴露表面的GaN基LED，以提高光提取效率及其制备方法
公开(公告)号：US07674639B2
公开(公告)日：2010-03-09
申请号：US11504435
申请日：2006-08-14
申请人： Steven D. Lester
发明人： Steven D. Lester
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/32 , H01L33/42
摘要： A light-emitting device and the method for making the same are disclosed. The device includes a substrate, a light-emitting structure and a light scattering layer. The light-emitting structure includes an active layer sandwiched between a p-type GaN layer and an n-type GaN layer, the active layer emitting light of a predetermined wavelength when electrons and holes from the n-type GaN layer and the p-type GaN layer, respectively, combine therein. The light scattering layer includes a GaN crystalline layer characterized by an N-face surface. The N-face surface includes features that scatter light of the predetermined wavelength. The light-emitting structure is between the N-face surface and the substrate.
摘要翻译：公开了一种发光器件及其制造方法。该装置包括基板，发光结构和光散射层。发光结构包括夹在p型GaN层和n型GaN层之间的有源层，当从n型GaN层和p型GaN层的电子和空穴发射预定波长的光时，有源层 GaN层分别结合在一起。光散射层包括以N面表面为特征的GaN结晶层。 N面表面包括散射预定波长的光的特征。发光结构在N面和衬底之间。

64. 发明申请

US20090261373A1 LOW OPTICAL LOSS ELECTRODE STRUCTURES FOR LEDS 有权
标题翻译： LED的低光损失电极结构
公开(公告)号：US20090261373A1
公开(公告)日：2009-10-22
申请号：US12493499
申请日：2009-06-29
申请人： Frank T. Shum , William W. So , Steven D. Lester
发明人： Frank T. Shum , William W. So , Steven D. Lester
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
摘要： An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination.
摘要翻译：公开了一种用于增强LED的亮度和/或效率的电极结构。电极结构可以具有形成在电极和发光半导体材料之间的金属电极和光学透射的厚电介质材料。电极和厚电介质配合以将来自半导体材料的光反射回半导体，以增强光最终从半导体材料透射的可能性。这种LED可以具有增强的效用，并且可以适用于诸如一般照明的用途。

65. 发明授权

US07473941B2 Structures for reducing operating voltage in a semiconductor device 失效
标题翻译：用于降低半导体器件中的工作电压的结构
公开(公告)号：US07473941B2
公开(公告)日：2009-01-06
申请号：US11203917
申请日：2005-08-15
申请人： Virginia M. Robbins , Steven D. Lester , Jeffrey N. Miller , David P. Bour
发明人： Virginia M. Robbins , Steven D. Lester , Jeffrey N. Miller , David P. Bour
IPC分类号： H01L33/00
CPC分类号： H01S5/305
摘要： A light-emitting device comprises an active region configured to generate light in response to injected charge, and an n-type material layer and a p-type material layer, wherein at least one of the n-type material layer and the p-type material layer is doped with at least two dopants, at least one of the dopants having an ionization energy higher than the ionization energy level of the other dopant.
摘要翻译：发光装置包括响应于注入的电荷而被配置为产生光的有源区，以及n型材料层和p型材料层，其中n型材料层和p型材料层中的至少一种材料层掺杂有至少两种掺杂剂，所述掺杂剂中的至少一种具有高于另一种掺杂剂的电离能级的电离能。

66. 发明授权

US06953702B2 Fixed wavelength vertical cavity optical devices and method of manufacture therefor 失效
标题翻译：固定波长垂直腔光学器件及其制造方法
公开(公告)号：US06953702B2
公开(公告)日：2005-10-11
申请号：US10151631
申请日：2002-05-16
申请人： Jeffrey N. Miller , Virginia M. Robbins , Steven D. Lester
发明人： Jeffrey N. Miller , Virginia M. Robbins , Steven D. Lester
IPC分类号： H01S5/183 , H01S5/00 , H01S5/02 , H01S5/40 , H01S5/42 , H01L21/20
CPC分类号： H01S5/18358 , H01S5/0014 , H01S5/0205 , H01S5/18341 , H01S5/18366 , H01S5/4087 , H01S5/423
摘要： Vertical cavity optical devices, and a method of manufacturing therefor, are provided where the method includes partially forming a first vertical cavity optical device on a wafer, adjusting the lasing wavelength of the first vertical cavity optical device, and fixing the lasing wavelength of the first vertical cavity optical device to complete the forming thereof.
摘要翻译：提供了垂直腔光学器件及其制造方法，其中该方法包括在晶片上部分地形成第一垂直腔光学器件，调整第一垂直腔光学器件的激光波长，以及固定第一垂直腔光学器件的激光波长垂直腔光学器件完成其形成。

67. 发明授权

US06806110B2 Monolithic multi-wavelength vertical-cavity surface emitting laser array and method of manufacture therefor 失效
标题翻译：单片多波长垂直腔表面发射激光阵列及其制造方法
公开(公告)号：US06806110B2
公开(公告)日：2004-10-19
申请号：US10151646
申请日：2002-05-16
申请人： Steven D. Lester , Virginia M. Robbins , Jeffrey N. Miller
发明人： Steven D. Lester , Virginia M. Robbins , Jeffrey N. Miller
IPC分类号： H01L2100
CPC分类号： H01S5/423 , H01S5/18341 , H01S5/18358 , H01S5/18366 , H01S5/18369 , H01S5/4087
摘要： A monolithic array of vertical cavity lasers with different emission wavelengths on a single wafer, and method of manufacture therefor, is provided. A first reflector is over the semiconductor substrate with a photoactive semiconductor layer. A reflector support defines first and second air gaps with the photoactive semiconductor layer. The second and third air gaps are made to be different from each other by geometric differences in the reflector support structure. Second and third reflectors are formed over the reflector support whereby a first laser is formed by the first reflector, the photoactive semiconductor structure, the first air gap, and the second reflector and whereby a second laser is formed by the first reflector, the photoactive semiconductor structure, the second air gap, and the third reflector. The emission wavelengths of the first and second lasers are different because of the different sizes of the first and second air gaps.
摘要翻译：提供了在单个晶片上具有不同发射波长的垂直腔激光器的单片阵列及其制造方法。第一反射器在具有光敏半导体层的半导体衬底上。反射器支撑件用光敏半导体层限定第一和第二气隙。通过反射器支撑结构中的几何差异使第二和第三气隙彼此不同。第二和第三反射器形成在反射器支撑件上，由此由第一反射器，光活性半导体结构，第一气隙和第二反射器形成第一激光器，由此由第一反射器形成第二激光器，光活性半导体结构，第二气隙和第三反射器。由于第一和第二气隙的尺寸不同，第一和第二激光器的发射波长是不同的。

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