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61. 发明授权

US08546029B2 Solid oxide fuel cell 有权
标题翻译：固体氧化物燃料电池
公开(公告)号：US08546029B2
公开(公告)日：2013-10-01
申请号：US13040884
申请日：2011-03-04
申请人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
发明人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
IPC分类号： H01M8/06
CPC分类号： H01M8/04776 , H01M8/04425 , H01M8/0612 , H01M8/0618 , H01M8/2428 , H01M8/243 , H01M2008/1293
摘要： To provide a solid oxide fuel cell in which the reformer is compact but is capable of supplying an appropriate quantity of fuel. The present invention is a solid oxide fuel cell (1) for generating electricity using fuel reformed by a reformer (20) and air, including a fuel supply means (38), a reformed air supply means (44), a water supply means (28) for supplying water to the reformer, a fuel supply quantity detection sensor (132) for detecting the quantity of fuel actually supplied, a fuel cell module (2), and a control means (110) for controlling each supply means so that the target quantities of fuel, reforming air, and water are fed into the reformer; the control means controls the fuel supply means to match the target fuel supply quantity, and controls the fuel supply means so that tracking performance of fuel supply quantity relative to target fuel supply quantity is higher when reforming air is being supplied to the reformer than when it is not being supplied.
摘要翻译：提供固体氧化物燃料电池，其中重整器紧凑但能够供应适量的燃料。本发明是一种使用由重整器（20）重整的燃料和空气发电的固体氧化物型燃料电池（1），包括燃料供给装置（38），改质空气供给装置（44），供水装置 28），用于向重整器供水的燃料供给量检测传感器（132），用于检测实际供给的燃料量的燃料供给量检测传感器（132），燃料电池模块（2）和控制装置（110），用于控制每个供给装置，将目标量的燃料，重整空气和水进料到重整器中; 控制装置控制燃料供给装置以匹配目标燃料供应量，并且控制燃料供应装置，使得当向重整器供应重整空气时，相对于目标燃料供应量的燃料供应量的跟踪性能比在没有提供。

62. 发明申请

US20130171534A1 SOLID OXIDE FUEL CELL DEVICE 有权
标题翻译：固体氧化物燃料电池装置
公开(公告)号：US20130171534A1
公开(公告)日：2013-07-04
申请号：US13823906
申请日：2011-09-28
申请人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
发明人： Toshiharu Otsuka , Katsuhisa Tsuchiya , Tsukasa Shigezumi , Toshiharu Ooe , Kiyotaka Nakano , Takuya Matsuo
IPC分类号： H01M8/06
CPC分类号： H01M8/0606 , C01B3/02 , C01B3/34 , C01B2203/0233 , C01B2203/0244 , C01B2203/0261 , C01B2203/066 , C01B2203/0816 , C01B2203/1258 , C01B2203/1604 , C01B2203/1619 , C01B2203/169 , H01M8/04022 , H01M8/04052 , H01M8/04089 , H01M8/04223 , H01M8/04268 , H01M8/0432 , H01M8/04373 , H01M8/04701 , H01M8/04738 , H01M8/04753 , H01M8/04761 , H01M8/04776 , H01M8/0618 , H01M8/0625 , H01M8/0662 , H01M8/0668 , H01M8/2425 , H01M8/243 , H01M8/2475 , H01M2008/1293 , Y02E60/50 , Y02E60/525
摘要： A solid oxide fuel cell device is provided which prevents excessive rising of the temperature inside a fuel cell module during the startup process. In a startup process, control unit controls to cause a transition from a fuel gas reforming reaction process to a POX process, an ATR process, and a SR process, then to a generating process; when the cell stack temperature and reformer temperature in each process satisfy respectively set transition conditions, a transition to the next process takes place; if control unit determines a temperature rise assist state exists, it executes an excess temperature rise suppression control so that during at least the transition to the generating process, the reformer temperature does not exceed a predetermined value.
摘要翻译：提供固体氧化物燃料电池装置，其防止在启动过程中燃料电池模块内的温度过度上升。在启动过程中，控制单元控制从燃料气体重整反应过程转变到POX过程，ATR过程和SR过程，然后进行生成过程; 当每个过程中的电池堆温度和重整器温度分别满足设定的转变条件时，发生向下一过程的转变; 如果控制单元确定温度上升辅助状态存在，则执行过度的升温抑制控制，使得在至少转换到生成过程中，重整器温度不超过预定值。

63. 发明授权

US08008292B2 Condensed benzamide compounds and inhibitors of vanilloid receptor subtype 1 (VR1) activity 有权
标题翻译：浓缩的苯甲酰胺化合物和香草素受体亚型1（VR1）活性的抑制剂
公开(公告)号：US08008292B2
公开(公告)日：2011-08-30
申请号：US11183265
申请日：2005-07-15
申请人： Yoshihisa Koga , Shinji Yata , Takashi Watanabe , Takuya Matsuo , Takayuki Yamasaki , Masahiro Sakata , Wataru Kondo , Hidekazu Ozeki , Yoshikazu Hori
发明人： Yoshihisa Koga , Shinji Yata , Takashi Watanabe , Takuya Matsuo , Takayuki Yamasaki , Masahiro Sakata , Wataru Kondo , Hidekazu Ozeki , Yoshikazu Hori
IPC分类号： A61K31/535 , C07D265/36 , C07D498/02
CPC分类号： A61K45/06 , C07D401/04 , C07D413/04 , C07D413/14 , C07D417/04 , C07D417/14
摘要： To provide a compound having an excellent inhibitory effect on vanilloid receptor subtype 1 (VR1) activity which is effective in treating diseases to which the vanilloid receptor subtype 1 (VR1) activity is involved, such as pain, acute pain, chronic pain, neuropathic pain, rheumatoid arthritis pain, neuralgia, etc. and a pharmaceutical composition containing the compound. The object has been attained by a condensed benzamide compound represented by the following formula (the symbols in the formula have the same meanings defined in the specification) or its salt:
摘要翻译：为了提供对于涉及涉及香草素受体亚型1（VR1）活性的疾病（例如疼痛，急性疼痛，慢性疼痛，神经性疼痛）有效治疗对香草素受体亚型1（VR1）活性具有优异抑制作用的化合物，类风湿性关节炎疼痛，神经痛等，以及含有该化合物的药物组合物。本发明的目的是通过下述式（式中的符号与说明书中所定义的相同含义）或其盐进行缩合的苯甲酰胺化合物来实现：

64. 发明授权

US07868398B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07868398B2
公开(公告)日：2011-01-11
申请号：US11542217
申请日：2006-10-04
申请人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
发明人： Takeshi Noda , Hidehito Kitakado , Takuya Matsuo
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/66757 , H01L29/42384 , H01L29/78603 , H01L29/78621 , H01L29/78675
摘要： A semiconductor device, which can improve the effect of a hydrogenation treatment in case of using a GOLD structure, and a method of manufacturing thereof is provided. A gate insulating film is formed on a semiconductor layer, and a source region, a drain region, and LDD regions are formed in the semiconductor layer. A main gate is formed on the gate insulating film. A sub-gate is formed on the main gate and the gate insulating film so as to cover a part of the main gate and either the LDD regions adjacent to the source region or the drain region. An interlayer insulating film containing hydrogen is formed on the sub-gate, main gate, and gate insulating film. Subsequently, a heat treatment for hydrogenation is performed to terminate a crystal defect of the semiconductor layer with hydrogen.
摘要翻译：提供了可以提高在使用GOLD结构的情况下氢化处理的效果的半导体器件及其制造方法。在半导体层上形成栅极绝缘膜，在半导体层中形成源极区，漏极区，LDD区。在栅极绝缘膜上形成主栅极。在主栅极和栅极绝缘膜上形成子栅极，以覆盖主栅极的一部分和与源极区域或漏极区域相邻的LDD区域。在子栅极，主栅极和栅极绝缘膜上形成含有氢的层间绝缘膜。随后，进行用于氢化的热处理，以氢终止半导体层的晶体缺陷。

65. 发明授权

US07625785B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07625785B2
公开(公告)日：2009-12-01
申请号：US11896155
申请日：2007-08-30
申请人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
发明人： Hideto Ohnuma , Masayuki Sakakura , Yasuhiro Mitani , Takuya Matsuo , Hidehito Kitakado
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/12 , H01L27/1277
摘要： A semiconductor device having a crystalline semiconductor film with production of a cavity suppressed and a manufacturing method thereof A manufacturing method of a semiconductor device according to the invention comprises the steps of forming an amorphous silicon film on a substrate having an insulating surface, adding a metal element such as Ni for promoting crystallization to the amorphous silicon film, applying heat treatment to crystallize the amorphous silicon film, so that a crystalline silicon film is formed on the substrate, removing a silicon oxide film formed on the surface of the crystalline silicon film due to the heat treatment by a solution containing organic solvent and fluoride, and irradiating laser light or strong light to the crystalline silicon film.
摘要翻译：具有抑制空腔制造的结晶半导体膜的半导体器件及其制造方法本发明的半导体器件的制造方法包括以下步骤：在具有绝缘表面的基板上形成非晶硅膜，添加金属元素如Ni，用于促进结晶到非晶硅膜，进行热处理以使非晶硅膜结晶，从而在基板上形成晶体硅膜，去除在晶体硅膜表面形成的氧化硅膜，通过含有有机溶剂和氟化物的溶液进行热处理，并向结晶硅膜照射激光或强光。

66. 发明授权

US07528410B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07528410B2
公开(公告)日：2009-05-05
申请号：US11584524
申请日：2006-10-23
申请人： Tatsuya Arao , Takeshi Noda , Takuya Matsuo , Hidehito Kitakado , Masanori Kyoho
发明人： Tatsuya Arao , Takeshi Noda , Takuya Matsuo , Hidehito Kitakado , Masanori Kyoho
IPC分类号： H01L29/12 , H01L29/786
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1259 , H01L29/6675 , H01L29/78621 , H01L29/78648
摘要： A semiconductor device that can be manufactured with a reduced cost by decreasing the number of masks is disclosed, and a method for manufacturing the semiconductor device is disclosed. The method for manufacturing the semiconductor device comprises the steps of: forming a semiconductor layer 3 having a source and a drain regions 10, 11, and LDD regions 16, 17; a gate insulating film 5; and a gate electrode 6; forming a first and a second interlayer insulating films 24, 25 over the gate electrode 6 and the gate insulating film 5; forming contact holes 25a, 25c to these interlayer insulating films so as to be located over each of the source region and the drain region; and an opening portion 25b to these interlayer insulating films so as to be located over the gate electrode and the LDD region; forming a second gate electrode 26b by a conductive film in the opening portion so as to cover the gate electrode and the LDD region; and a pixel electrode 26a over the second interlayer insulating film; removing the gate insulating film in the contact hole; and forming wirings 27, 28 connected to each the source region and the drain region.
摘要翻译：公开了可以通过减少掩模数而降低成本的半导体器件，并且公开了一种用于制造半导体器件的方法。制造半导体器件的方法包括以下步骤：形成具有源极和漏极区域10,11以及LDD区域16,17的半导体层3; 栅极绝缘膜5; 和栅电极6; 在栅极电极6和栅极绝缘膜5上形成第一和第二层间绝缘膜24,25; 将这些层间绝缘膜形成接触孔25a，25c，以便位于源极区域和漏极区域的每一个上; 和这些层间绝缘膜的开口部25b，以位于栅电极和LDD区之上; 通过开口部中的导电膜形成第二栅电极26b，以覆盖栅电极和LDD区; 和在第二层间绝缘膜上方的像素电极26a; 去除接触孔中的栅极绝缘膜; 以及形成连接到每个源极区域和漏极区域的布线27,28。

67. 发明申请

US20070170513A1 Semiconductor Device and Manufacturing Method Thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20070170513A1
公开(公告)日：2007-07-26
申请号：US11694467
申请日：2007-03-30
申请人： Saishi Fujikawa , Etsuko Asano , Tatsuya Arao , Takashi Yokoshima , Takuya Matsuo , Hidehito Kitakado
发明人： Saishi Fujikawa , Etsuko Asano , Tatsuya Arao , Takashi Yokoshima , Takuya Matsuo , Hidehito Kitakado
IPC分类号： H01L29/94 , H01L29/76 , H01L31/00
CPC分类号： H01L29/78621 , H01L27/1237 , H01L29/42384 , H01L29/49 , H01L29/66757
摘要： A semiconductor device of which manufacturing steps can be simplified by doping impurities at a time, and a manufacturing method thereof. The manufacturing method of the semiconductor device comprises the steps of: forming first and second semiconductor layers over a substrate, forming a first insulating film over the first and second semiconductor layers, forming first and second conductive films thereover, forming a first gate electrode having a stacked layer of the first and second conductive films, in which a portion of the first conductive film is exposed from the second conductive film, over the first semiconductor layer with the first insulating film interposed therebetween, forming a second insulating film over the first insulating film, forming third and fourth conductive films thereover, and forming a second gate electrode having a stacked layer of the third and fourth conductive films, in which a portion of the third conductive film is exposed from the fourth conductive film, over the second semiconductor layer with the first and second insulating films interposed therebetween.
摘要翻译：通过一次掺杂杂质可以简化制造步骤的半导体器件及其制造方法。半导体器件的制造方法包括以下步骤：在衬底上形成第一和第二半导体层，在第一和第二半导体层上形成第一绝缘膜，在其上形成第一和第二导电膜，形成具有将第一导电膜的一部分从第二导电膜露出的第一导电膜和第二导电膜的第一绝缘膜在第一绝缘膜之上形成第二绝缘膜，在其上形成第三和第四导电膜，并且形成第二栅电极，其具有第三导电膜和第四导电膜的堆叠层，其中第三导电膜的一部分从第四导电膜暴露在第二半导体层上，其间插入第一绝缘膜和第二绝缘膜。

68. 发明授权

US07217952B2 Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus 有权
标题翻译：半导体装置及半导体制造装置的制造方法
公开(公告)号：US07217952B2
公开(公告)日：2007-05-15
申请号：US11221773
申请日：2005-09-09
申请人： Setsuo Nakajima , Aiko Shiga , Naoki Makita , Takuya Matsuo
发明人： Setsuo Nakajima , Aiko Shiga , Naoki Makita , Takuya Matsuo
IPC分类号： H01L29/04
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02595 , H01L21/02609 , H01L21/2026 , H01L21/6708 , H01L21/67167 , H01L21/67213 , H01L29/66757 , H01L29/78675
摘要： A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, after removing a natural oxide film formed on a semiconductor film surface. TFTs having little dispersion in their electrical characteristics can be obtained by using the semiconductor film thus obtained in active layers of the TFTs, and the electrical properties can be improved. In addition, deterioration in productivity and throughput can be reduced to a minimum by using a semiconductor manufacturing apparatus of the present invention.
摘要翻译：提供了一种用于制造其电特性几乎没有偏差的TFT的技术。在除去形成在半导体膜表面上的自然氧化物膜之后，通过进行具有有机物去除效果的氧化处理，形成清洁的氧化物膜来减少半导体膜的污染。通过使用在TFT的有源层中获得的半导体膜，可以获得其电特性几乎没有色散的TFT，并且可以提高电性能。此外，通过使用本发明的半导体制造装置，可以将生产率和生产量的劣化降低到最小。

69. 发明授权

US07157321B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07157321B2
公开(公告)日：2007-01-02
申请号：US10963822
申请日：2004-10-14
申请人： Tatsuya Arao , Takeshi Noda , Takuya Matsuo , Hidehito Kitakado , Masanori Kyoho
发明人： Tatsuya Arao , Takeshi Noda , Takuya Matsuo , Hidehito Kitakado , Masanori Kyoho
IPC分类号： H01L21/338 , H01L21/84
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/1259 , H01L29/6675 , H01L29/78621 , H01L29/78648
摘要： A semiconductor device that can be manufactured with a reduced cost by decreasing the number of masks is disclosed, and a method for manufacturing the semiconductor device is disclosed. The method for manufacturing the semiconductor device comprises the steps of: forming a semiconductor layer 3 having a source and a drain regions 10, 11, and LDD regions 16, 17; a gate insulating film 5; and a gate electrode 6; forming a first and a second interlayer insulating films 24, 25 over the gate electrode 6 and the gate insulating film 5; forming contact holes 25a, 25c to these interlayer insulating films so as to be located over each of the source region and the drain region; and an opening portion 25b to these interlayer insulating films so as to be located over the gate electrode and the LDD region; forming a second gate electrode 26b by a conductive film in the opening portion so as to cover the gate electrode and the LDD region; and a pixel electrode 26a over the second interlayer insulating film; removing the gate insulating film in the contact hole; and forming wirings 27, 28 connected to each the source region and the drain region.
摘要翻译：公开了可以通过减少掩模数而降低成本的半导体器件，并且公开了一种用于制造半导体器件的方法。制造半导体器件的方法包括以下步骤：形成具有源极和漏极区域10,11以及LDD区域16,17的半导体层3; 栅极绝缘膜5; 和栅电极6; 在栅极电极6和栅极绝缘膜5上形成第一和第二层间绝缘膜24,25; 向这些层间绝缘膜形成接触孔25a，25c，以便位于源极区域和漏极区域之上; 和这些层间绝缘膜的开口部分25b，以便位于栅电极和LDD区之上; 通过开口部中的导电膜形成第二栅电极26b，以覆盖栅电极和LDD区; 以及在第二层间绝缘膜上的像素电极26a; 去除接触孔中的栅极绝缘膜; 以及形成连接到每个源极区域和漏极区域的布线27,28。

70. 发明授权

US07015079B2 Semiconductor film, semiconductor device, and method of manufacturing the same including adding metallic element to the amorphous semiconductor film and introducing oxygen after crystallization 有权
标题翻译：半导体膜，半导体器件及其制造方法，包括在非晶半导体膜中添加金属元素并在结晶后引入氧
公开(公告)号：US07015079B2
公开(公告)日：2006-03-21
申请号：US10771404
申请日：2004-02-05
申请人： Hidekazu Miyairi , Aiko Shiga , Katsumi Nomura , Naoki Makita , Takuya Matsuo
发明人： Hidekazu Miyairi , Aiko Shiga , Katsumi Nomura , Naoki Makita , Takuya Matsuo
IPC分类号： H01L21/00 , H01L21/84 , H01L21/20 , H01L21/36
CPC分类号： H01L27/12 , G02F1/1362 , H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02667 , H01L21/02672 , H01L21/02686 , H01L27/1277 , H01L29/66757 , H01L29/78621 , H01L29/78675
摘要： By adding a novel improvement to the technique disclosed in JP 8-78329 A, a manufacturing method in which film characteristics of a semiconductor film having a crystalline structure are improved is provided. In addition, a TFT having superior TFT characteristics, such as field effect mobility, which uses the semiconductor film as an active layer, and a method of manufacturing the TFT, are also provided. A metallic element which promotes the crystallization of silicon is added to a semiconductor film having an amorphous structure and an oxygen concentration within the film of less than 5×1018/cm3. The semiconductor film having an amorphous structure is then heat-treated, forming a semiconductor film having a crystalline structure. Subsequently, an oxide film on the surface is removed. Oxygen is introduced to the semiconductor film having a crystalline structure, and processing is performed such that the concentration of oxygen within the film is from 5×1018/cm3 to 1×1021/cm3. After removing an oxide film on the surface of the semiconductor film, the semiconductor film surface is leveled by irradiating laser light under an inert gas atmosphere or in a vacuum.
摘要翻译：通过添加对JP 8-78329A中公开的技术的新颖改进，提供了具有改善晶体结构的半导体膜的膜特性的制造方法。此外，还提供了具有优异TFT特性的TFT，例如使用半导体膜作为有源层的场效应迁移率，以及TFT的制造方法。将促进硅结晶的金属元素添加到半导体膜中，半导体膜具有薄膜内的非晶结构和氧浓度小于5×10 18 / cm 3。然后对具有非晶结构的半导体膜进行热处理，形成具有晶体结构的半导体膜。随后，除去表面上的氧化物膜。将氧气引入到具有晶体结构的半导体膜中，并且进行处理，使得膜内的氧浓度为5×10 18 / cm 3至1×10 6 > 21 3/3。在去除半导体膜表面上的氧化物膜之后，通过在惰性气体气氛或真空中照射激光来平整半导体膜表面。

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