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    • 2. 发明授权
    • Manufacturing method of display device
    • 显示装置的制造方法
    • US07732268B2
    • 2010-06-08
    • US11882828
    • 2007-08-06
    • Hideaki ShimmotoMikio HongoAkio YazakiTakeshi NodaTakuo Kaitoh
    • Hideaki ShimmotoMikio HongoAkio YazakiTakeshi NodaTakuo Kaitoh
    • H01L21/00
    • H01L21/02532H01L21/02683H01L21/02691H01L27/1285
    • A method of manufacturing a display device to improve the quality of a polycrystal silicon upon dehydrogenating and polycrystallizing an amorphous silicon at the outside of a display region of a substrate, by forming a plurality of pixels having TFT devices using an amorphous silicon in the display region of the substrate, and forming a plurality of driving circuits having semiconductor devices using a polycrystal silicon at the outside of the display region, the method including irradiation of a first continuous oscillation laser only to the amorphous silicon in the region for forming the driving circuit and the peripheral region thereof to conduct dehydrogenation and then irradiation of a second continuous oscillation region only to the dehydrogenated region to polycrystallize the amorphous silicon, wherein the region to which the first continuous oscillation laser is irradiated is wider than the region to which the second continuous oscillation laser is irradiated.
    • 一种制造显示装置的方法,通过在显示区域中形成具有使用非晶硅的TFT器件的多个像素,从而在衬底的显示区域的外侧使非晶硅脱氢和多晶化时提高多晶硅的质量 并且在显示区域的外部形成具有使用多晶硅的半导体器件的多个驱动电路,该方法包括仅在用于形成驱动电路的区域中的非晶硅上照射第一连续振荡激光,以及 其周边区域进行脱氢,然后仅将第二连续振荡区域照射到脱氢区域以将非晶硅多晶化,其中第一连续振荡激光器照射的区域比第二连续振荡区域 激光被照射。
    • 3. 发明申请
    • DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    • 显示装置及其制造方法
    • US20100096632A1
    • 2010-04-22
    • US12578641
    • 2009-10-14
    • Takeshi KURIYAGAWATakeshi NodaTakuo Kaitoh
    • Takeshi KURIYAGAWATakeshi NodaTakuo Kaitoh
    • H01L27/12H01L21/77
    • H01L27/124H01L27/1248H01L29/66765
    • A second insulation layer which is formed by stacking a plurality of layers made of different materials in a mutually contact manner is formed such that the second insulation layer covers a source region and a drain region and also covers a gate electrode from above. A first contact hole which reaches one of the source region and the drain region and a recessed portion which is arranged above the gate electrode but is not communicated with the gate electrode are simultaneously formed on the second insulation layer by dry etching. A first line layer is formed so as to cover the first contact hole. After forming the first line layer, a bottom surface of the recessed portion is etched by dry etching thus forming a second contact hole which reaches the gate electrode in the first and second insulation layers. A second line layer is formed on the second contact hole.
    • 形成通过以相互接触的方式堆叠由不同材料制成的多个层而形成的第二绝缘层,使得第二绝缘层覆盖源极区域和漏极区域并且还从上方覆盖栅极电极。 通过干法蚀刻在第二绝缘层上同时形成到达源极区域和漏极区域中的一个的第一接触孔和设置在栅电极上方但不与栅电极连通的凹部。 第一线层形成为覆盖第一接触孔。 在形成第一线层之后,通过干蚀刻蚀刻凹陷部分的底表面,从而形成到达第一和第二绝缘层中的栅电极的第二接触孔。 在第二接触孔上形成第二线层。
    • 5. 发明申请
    • Display device and fabrication method thereof
    • 显示装置及其制造方法
    • US20070117292A1
    • 2007-05-24
    • US11593552
    • 2006-11-07
    • Yasukazu KimuraToshihiko ItogaTakeshi Noda
    • Yasukazu KimuraToshihiko ItogaTakeshi Noda
    • H01L21/84H01L27/148
    • H01L27/1281H01L27/1285H01L27/1296
    • The present invention provides a display-device-use substrate which is strip-crystallized while minimizing the generation of peeling of a semiconductor by suppressing the generation of aggregation at the time of crystallization due to the radiation of continuous oscillation laser beams. A silicon nitride film and a silicon oxide film which constitutes a background film are formed on a glass substrate on which projecting portions are formed, and a silicon base film is formed on the silicon nitride film and a silicon oxide film. Banks which intersect the scanning directions of laser beams are positioned below the silicon base substrate. The aggregation which is generated by the scanning of laser beams is stopped at a portion after the laser beams gets over the bank and, thereafter, the strip crystal silicon film is formed normally.
    • 本发明提供一种显示装置用基板,其通过抑制由连续振荡激光束的辐射引起的结晶时的聚集的产生而使半导体的剥离最小化而进行带状结晶化。 在形成有突出部的玻璃基板上形成氮化硅膜和构成背景膜的氧化硅膜,在氮化硅膜和氧化硅膜上形成硅基膜。 与激光束的扫描方向相交的堤位于硅基底的下方。 通过激光扫描产生的聚集在激光束越过堤岸之后的一部分停止,此后,正常形成条状晶体硅膜。
    • 6. 发明授权
    • Apparatus for manufacturing flat panel display devices
    • 用于制造平板显示装置的装置
    • US07193693B2
    • 2007-03-20
    • US10991482
    • 2004-11-19
    • Akio YazakiMikio HongoMutsuko HatanoTakeshi Noda
    • Akio YazakiMikio HongoMutsuko HatanoTakeshi Noda
    • G01N21/00G01J1/00B23K26/06
    • B23K26/073B23K26/702H01L27/14625
    • A mechanism for always measuring the spatial intensity distribution of a laser beam and displacement of the optical axis of the laser beam is provided so that a measured signal is processed when the laser beam incident on a laser beam shaping optical element is out of a predetermined condition. The shape, diameter and incidence position of the laser beam incident on the laser beam shaping optical element are always kept in the predetermined condition by a spatial filter disposed at the position of a focal point of lenses forming a beam expander disposed in the optical axis, on the basis of a result of the signal processing.In this manner, silicon thin films uniform in crystallinity can be formed stably with a high yield on an insulating substrate which forms display panels of flat panel display devices.
    • 提供用于总是测量激光束的空间强度分布和激光束的光轴位移的机构,使得当入射到激光束整形光学元件上的激光束处于预定条件时,处理测量信号 。 入射到激光束整形光学元件上的激光束的形状,直径和入射位置总是通过设置在设置在光轴上的形成光束扩展器的透镜的焦点的位置处的空间滤光器保持在预定条件, 基于信号处理的结果。 以这种方式,可以在形成平板显示装置的显示面板的绝缘基板上以高产率稳定地形成结晶度均匀的硅薄膜。
    • 9. 发明申请
    • Light emitting device
    • 发光装置
    • US20050168415A1
    • 2005-08-04
    • US11041264
    • 2005-01-25
    • Takeshi NodaRyota Fukumoto
    • Takeshi NodaRyota Fukumoto
    • H01L29/786G09F9/30G09G3/30G09G3/32H01L21/77H01L27/12H01L27/32H05B33/00H05B33/08
    • G09G3/3233G09G3/3291G09G2300/0465G09G2300/0842G09G2300/0861G09G2310/0251G09G2310/0256G09G2320/0295G09G2320/043H01L27/1296H01L27/3262H01L27/3276
    • A light emitting device is provided where an area occupied by capacitors is decreased, luminance variations of light emitting elements caused by characteristics variations or fluctuations of the gate voltage Vgs of driving TFTs can be suppressed. Each of multiple pixels includes a light emitting element, a first transistor for determining a current value supplied thereto, a second transistor for selecting emission/non-emission thereof according to video signals, a first power supply line, and a second power supply line shared by the multiple pixels. In addition, a compensation circuit is provided each of which includes a third transistor whose gate and drain are connected to the second power supply line, and a fourth transistor for controlling the connection between a third power supply line and the gate and drain of the third transistor. The first and second transistors are connected in series between the light emitting element and the first power supply line, and the gate of the first transistor is connected to the second power supply line.
    • 提供了一种发光器件,其中由电容器占据的面积减小,可以抑制由驱动TFT的栅极电压Vgs的特性变化或波动引起的发光元件的亮度变化。 多个像素中的每一个包括发光元件,用于确定提供给其的电流值的第一晶体管,用于根据视频信号选择发光/不发光的第二晶体管,第一电源线和第二电源线共享 由多个像素。 此外,提供了一种补偿电路,每个补偿电路包括栅极和漏极连接到第二电源线的第三晶体管,以及用于控制第三电源线与第三电源线的栅极和漏极之间的连接的第四晶体管 晶体管。 第一和第二晶体管串联在发光元件和第一电源线之间,第一晶体管的栅极连接到第二电源线。