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61. 发明申请

US20100163822A1 OVONIC THRESHOLD SWITCH FILM COMPOSITION FOR TSLAGS MATERIAL 有权
标题翻译：用于TSLAGS材料的OVONIC THRESHOU SWITCH膜组合物
公开(公告)号：US20100163822A1
公开(公告)日：2010-07-01
申请号：US12637644
申请日：2009-12-14
申请人： Stanford Ovshinsky , Tyler Lowrey , James D. Reed
发明人： Stanford Ovshinsky , Tyler Lowrey , James D. Reed
IPC分类号： H01L45/00 , C22C30/00 , H01L29/18
CPC分类号： H01L45/141 , C01B19/002 , C01P2006/40 , H01L27/2427 , H01L45/04 , H01L45/1233 , H01L45/1625 , H01L45/1641
摘要： A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.
摘要翻译：优化超声波阈值开关的操作参数的硫族化合物包括在9至39范围内的砷的原子百分比，10和40范围内的锗的原子百分比，5的原子百分比在5的范围内， 18，氮的原子百分比在0和10的范围内，以及硫，硒和碲的合金。硫与硒的比例在0.25和4的范围内，硫，硒和碲合金中硫与碲的比例在0.11和1的范围内。

62. 发明申请

US20090298222A1 Method for manufacturing Chalcogenide devices 审中-公开
标题翻译：制造硫族化物装置的方法
公开(公告)号：US20090298222A1
公开(公告)日：2009-12-03
申请号：US12154952
申请日：2008-05-28
申请人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
发明人： Tyler Lowrey , Jeff Fournier , Robert Nuss , Carl Schell , Guy Wicker , Jim Ricker , James Reed , Ed Spall , Sergey Kostylev , Wolodymyr Czubatyj , Regino Sandoval
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/04 , H01L45/144 , H01L45/1608
摘要： A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
摘要翻译：硫族化物器件形成的方法包括处理沉积硫族化物材料的表面。该处理减少或消除了表面的天然氧化物和其他污染物，从而增加了硫属化物层与处理过的表面的粘附性，消除了硫属化物层与沉积表面之间的空隙，并且由于污染物的迁移而降低了硫族化物材料的降解硫族化物。

63. 发明申请

US20090116280A1 Accessing a phase change memory 有权
标题翻译：访问相变存储器
公开(公告)号：US20090116280A1
公开(公告)日：2009-05-07
申请号：US11983098
申请日：2007-11-07
申请人： Ward Parkinson , Tyler Lowrey
发明人： Ward Parkinson , Tyler Lowrey
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C13/0004 , G11C13/0069 , G11C2013/0078 , G11C2213/79
摘要： A memory employs a low-level current source to access a phase change memory cell. The current source charges an access capacitor in order to store sufficient charge for an ensuing access. When a memory cell is accessed, charge stored on the capacitor is discharged through the phase change memory, supplying a current to the phase change memory cell that is sufficient for the intended access operation and greater than that provided directly by the current source.
摘要翻译：存储器采用低电平电流源来访问相变存储器单元。电流源为存取电容器充电以便为接下来的存取储存足够的电量。当访问存储器单元时，存储在电容器上的电荷通过相变存储器放电，向相变存储器单元提供足以用于预期访问操作的电流并且大于由电流源直接提供的电流。

64. 发明授权

US07525117B2 Chalcogenide devices and materials having reduced germanium or telluruim content 有权
标题翻译：硫族化物装置和具有降低的锗或碲化物含量的材料
公开(公告)号：US07525117B2
公开(公告)日：2009-04-28
申请号：US11301211
申请日：2005-12-12
申请人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
发明人： Sergey A. Kostylev , Tyler Lowrey , Guy Wicker , Wolodymyr Czubatyj
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
摘要： A chalcogenide material and memory device exhibiting fast operation over an extended range of reset state resistances. Electrical devices containing the chalcogenide materials permit rapid transformations from the reset state to the set state for reset and set states having a high resistance ratio. The devices provide for high resistance contrast of memory states while preserving fast operational speeds. The chalcogenide materials include Ge, Sb and Te where the Ge and/or Te content is lean relative to Ge2Sb2Te5. In one embodiment, the concentration of Ge is between 11% and 22%, the concentration of Sb is between 22% and 65%, and the concentration of Te is between 28% and 55%. In a preferred embodiment, the concentration of Ge is between 15% and 18%, the concentration of Sb is between 32% and 35%, and the concentration of Te is between 48% and 51%.
摘要翻译：在扩展的复位状态电阻范围内呈现快速操作的硫族化物材料和存储器件。含有硫族化物材料的电气装置允许从复位状态到设定状态的快速转换以及具有高电阻比的设定状态。这些器件提供高电阻对比度的存储器状态，同时保持快速的操作速度。硫族化物材料包括Ge，Sb和Te，其中Ge和/或Te含量相对于Ge 2 Sb 2 Te 5是贫的。在一个实施方案中，Ge的浓度为11％至22％，Sb的浓度为22％至65％，Te的浓度为28％至55％。在优选的实施方案中，Ge的浓度为15％至18％，Sb的浓度为32％至35％，Te的浓度为48％至51％。

65. 发明申请

US20080030306A1 Radio Frequency Identification Sensor Tag Apparatuses 审中-公开
标题翻译：射频识别传感器标签设备
公开(公告)号：US20080030306A1
公开(公告)日：2008-02-07
申请号：US11847538
申请日：2007-08-30
申请人： James O'Toole , John Tuttle , Mark Tuttle , Tyler Lowrey , Kevin Devereaux , George Pax , Brian Higgins , David Ovard , Shu-Sun Yu , Robert Rotzoll
发明人： James O'Toole , John Tuttle , Mark Tuttle , Tyler Lowrey , Kevin Devereaux , George Pax , Brian Higgins , David Ovard , Shu-Sun Yu , Robert Rotzoll
IPC分类号： G06K19/07
CPC分类号： G06K19/0716 , G06K7/0008 , G06K7/10059 , G06K19/0707 , G06K19/0712 , G06K19/0723 , G06K19/0726 , G06K19/07749 , G06K19/07758 , H01Q1/2225 , H03L7/0995 , H03L7/148
摘要： A radio frequency identification device includes an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.
摘要翻译：射频识别装置包括包括接收器，发射器和微处理器的集成电路。接收机和发射机一起定义了一个有效的应答器。集成电路优选地是包括接收器，发射器和微处理器的单片单片集成电路。由于该设备包括有源应答器，而不是依赖于磁耦合功率的转发器，该器件具有更大的范围。

66. 发明授权

US07327602B2 Methods of accelerated life testing of programmable resistance memory elements 失效
标题翻译：可编程电阻存储元件加速寿命测试方法
公开(公告)号：US07327602B2
公开(公告)日：2008-02-05
申请号：US10960263
申请日：2004-10-07
申请人： Sergey A. Kostylev , Tyler Lowrey , Wolodymyr Czubatyj
发明人： Sergey A. Kostylev , Tyler Lowrey , Wolodymyr Czubatyj
IPC分类号： G11C11/00
CPC分类号： G11C13/0069 , G11C13/0004 , G11C29/50 , G11C2013/0078 , G11C2013/0092
摘要： A method of testing a programmable resistance memory element. The method includes applying a plurality of reset pulses to the memory element. Each of the reset pulses having an energy which is greater than the minimum energy needed to program the memory element from its set state to its reset state.
摘要翻译：一种测试可编程电阻存储元件的方法。该方法包括将多个复位脉冲施加到存储元件。每个复位脉冲具有大于将存储器元件从其设置状态编程到其复位状态所需的最小能量的能量。

67. 发明申请

US20070293209A1 Systems for Remotely Maintaining Inventory 审中-公开
标题翻译：远程维护库存系统
公开(公告)号：US20070293209A1
公开(公告)日：2007-12-20
申请号：US11847558
申请日：2007-08-30
申请人： James O'Toole , John Tuttle , Mark Tuttle , Tyler Lowrey , Kevin Devereaux , George Pax , Brian Higgins , David Ovard , Shu-Sun Yu , Robert Rotzoll
发明人： James O'Toole , John Tuttle , Mark Tuttle , Tyler Lowrey , Kevin Devereaux , George Pax , Brian Higgins , David Ovard , Shu-Sun Yu , Robert Rotzoll
IPC分类号： H04M3/00
CPC分类号： G06K19/0716 , G06K7/0008 , G06K7/10059 , G06K19/0707 , G06K19/0712 , G06K19/0723 , G06K19/0726 , G06K19/07749 , G06K19/07758 , H01Q1/2225 , H03L7/0995 , H03L7/148
摘要： A radio frequency identification device includes an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.
摘要翻译：射频识别装置包括包括接收器，发射器和微处理器的集成电路。接收机和发射机一起定义了一个有效的应答器。集成电路优选地是包括接收器，发射器和微处理器的单片单片集成电路。由于该设备包括有源应答器，而不是依赖于磁耦合功率的转发器，该器件具有更大的范围。

68. 发明申请

US20070247899A1 Programming a normally single phase chalcogenide material for use as a memory or FPLA 有权
标题翻译：编程正常的单相硫属化物材料，用作记忆体或FPLA
公开(公告)号：US20070247899A1
公开(公告)日：2007-10-25
申请号：US11407573
申请日：2006-04-20
申请人： George Gordon , Ward Parkinson , John Peters , Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Ilya Karpov , Charles Kuo
发明人： George Gordon , Ward Parkinson , John Peters , Tyler Lowrey , Stanford Ovshinsky , Guy Wicker , Ilya Karpov , Charles Kuo
IPC分类号： G11C11/00
CPC分类号： G11C13/0004 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/009 , G11C2013/0092 , G11C2213/77 , H01L27/2472 , H01L45/04 , H01L45/1233 , H01L45/141 , H01L45/144
摘要： A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.
摘要翻译：可以用稳定的硫属化物玻璃来实现记忆，硫化物玻璃被定义为当暴露于200℃下30分钟或更短时不改变为通常结晶相的通常为非晶态的硫族化物材料。可以通过改变材料的阈值电压来编程不同的状态。可以用不同幅度和/或不同脉冲下降时间的脉冲来改变阈值电压。可以使用两种不同状态的阈值电压之间的参考电平进行读取。通常不需要单独的访问设备。

69. 发明授权

US07253429B2 Electrically programmable memory element 有权
标题翻译：电可编程存储元件
公开(公告)号：US07253429B2
公开(公告)日：2007-08-07
申请号：US10981826
申请日：2004-11-05
申请人： Patrick Klersy , Tyler Lowrey
发明人： Patrick Klersy , Tyler Lowrey
IPC分类号： H01L47/00
CPC分类号： H01L27/2436 , G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2472 , H01L45/06 , H01L45/122 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/16 , H01L45/1675
摘要： A programmable resistance memory element including a memory material which is raised above a semiconductor substrate by a dielectric layer.
摘要翻译：一种可编程电阻存储元件，包括通过电介质层在半导体衬底上升起的存储材料。

70. 发明申请

US20070139164A1 Radio frequency data communications device 失效
标题翻译：射频数据通信设备
公开(公告)号：US20070139164A1
公开(公告)日：2007-06-21
申请号：US11607117
申请日：2006-11-28
申请人： James O'Toole , John Tuttle , Mark Tuttle , Tyler Lowrey , Kevin Devereaux , George Pax , Brian Higgins , Shu-Sun Yu , David Ovard , Robert Rotzoll
发明人： James O'Toole , John Tuttle , Mark Tuttle , Tyler Lowrey , Kevin Devereaux , George Pax , Brian Higgins , Shu-Sun Yu , David Ovard , Robert Rotzoll
IPC分类号： H04Q5/22
CPC分类号： G06K19/0716 , G06K7/0008 , G06K7/10059 , G06K19/0707 , G06K19/0712 , G06K19/0723 , G06K19/0726 , G06K19/07749 , G06K19/07758 , G06K2017/0051 , H01Q1/2225 , H03L7/0995 , H03L7/148
摘要： A radio frequency identification device includes an integrated circuit including a receiver, a transmitter, and a microprocessor. The receiver and transmitter together define an active transponder. The integrated circuit is preferably a monolithic single die integrated circuit including the receiver, the transmitter, and the microprocessor. Because the device includes an active transponder, instead of a transponder which relies on magnetic coupling for power, the device has a much greater range.
摘要翻译：射频识别装置包括包括接收器，发射器和微处理器的集成电路。接收机和发射机一起定义了一个有效的应答器。集成电路优选地是包括接收器，发射器和微处理器的单片单片集成电路。由于该设备包括有源应答器，而不是依赖于磁耦合功率的转发器，该器件具有更大的范围。

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