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61. 发明授权

US07670581B2 Light-emitting nanoparticles and methods of making same 有权
标题翻译：发光纳米颗粒及其制备方法
公开(公告)号：US07670581B2
公开(公告)日：2010-03-02
申请号：US12156905
申请日：2008-06-04
申请人： Brian A. Korgel , Keith P. Johnston
发明人： Brian A. Korgel , Keith P. Johnston
IPC分类号： C01B33/02 , B32B5/16
CPC分类号： H01L33/24 , B82Y10/00 , B82Y30/00 , C30B7/00 , C30B29/605 , H01L21/02532 , H01L21/02535 , H01L21/02601 , H01L21/02628 , H01L33/08 , H01L33/18 , H01L33/26 , H01L33/34 , H01L51/0595 , Y10S977/774 , Y10S977/81 , Y10S977/95 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993
摘要： A method for the production of a robust, chemically stable, crystalline, passivated nanoparticle and composition containing the same, that emit light with high efficiencies and size-tunable and excitation energy tunable color. The methods include the thermal degradation of a precursor molecule in the presence of a capping agent at high temperature and elevated pressure. A particular composition prepared by the methods is a passivated silicon nanoparticle composition displaying discrete optical transitions.
摘要翻译：一种生产稳定，化学稳定，结晶，钝化的纳米颗粒和含有该纳米颗粒的组合物的方法，其发射具有高效率和尺寸可调谐和激发能量可调颜色的光。所述方法包括在高温和高压下在封端剂存在下前体分子的热降解。通过该方法制备的特定组合物是显示离散光学跃迁的钝化硅纳米颗粒组合物。

62. 发明授权

US07666708B2 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices 有权
标题翻译：掺杂的细长半导体，生长这样的半导体，包括这种半导体的器件，以及制造这样的器件
公开(公告)号：US07666708B2
公开(公告)日：2010-02-23
申请号：US11543352
申请日：2006-10-04
申请人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
发明人： Charles M. Lieber , Yi Cui , Xiangfeng Duan , Yu Huang
IPC分类号： H01L51/40 , D01C5/00 , D01F9/12
CPC分类号： H01L29/0665 , B01J23/50 , B01J23/52 , B01J23/72 , B01J35/0013 , B01J37/349 , B81C1/0019 , B81C1/00206 , B82Y10/00 , B82Y15/00 , B82Y30/00 , B82Y40/00 , C30B11/00 , C30B25/005 , C30B29/605 , G01N27/4146 , G01N33/54373 , G11C13/0014 , G11C13/0019 , G11C13/025 , G11C13/04 , G11C2213/77 , G11C2213/81 , H01L21/02521 , H01L21/02532 , H01L21/0254 , H01L21/02543 , H01L21/02557 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02628 , H01L21/02631 , H01L21/02636 , H01L21/02639 , H01L21/02645 , H01L21/02653 , H01L23/53276 , H01L29/045 , H01L29/0673 , H01L29/068 , H01L29/16 , H01L29/1602 , H01L29/18 , H01L29/20 , H01L29/207 , H01L29/22 , H01L29/24 , H01L29/26 , H01L29/267 , H01L33/06 , H01L33/18 , H01L33/20 , H01L51/002 , H01L51/0048 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , Y10S438/962 , Y10S977/762 , Y10S977/847 , Y10S977/858 , Y10S977/882 , Y10S977/883 , Y10S977/892 , Y10S977/936 , Y10T428/24 , H01L2924/00
摘要： A bulk-doped semiconductor that is at least one of the following: a single crystal, an elongated and bulk-doped semiconductor that, at any point along its longitudinal is, axis, has a largest cross-sectional dimension less than 500 nanometers, and a free-standing and bulk-doped semiconductor with at least one portion having a smallest width of less than 500 nanometers. At least one portion of such a semiconductor may a smallest width of less than 200 nanometers, or less than 150 nanometers, or less than 100 nanometers, or less than 80 nanometers, or less than 70 nanometers, or less than 60 nanometers, or less than 40 nanometers, or less than 20 nanometers, or less than 10 nanometers, or even less an 5 nanometers. Such a semiconductor may be doped during growth. Such a semiconductor may be part of a device, which may include any of a variety of devices and combinations thereof, and a variety assembling techniques may be used to fabricate devices from such a semiconductor.
摘要翻译：一种体积掺杂半导体，其为以下至少一种：单晶，细长体和体掺杂半导体，其沿着其纵向的任何点为轴线，具有小于500纳米的最大横截面尺寸，以及具有至少一个具有小于500纳米的最小宽度的部分的独立且体积掺杂的半导体。这种半导体的至少一部分可以具有小于200纳米，或小于150纳米，或小于100纳米，或小于80纳米，或小于70纳米，或小于60纳米或更小的最小宽度小于20纳米，或小于10纳米，或甚至更小的5纳米。这样的半导体可以在生长期间被掺杂。这样的半导体可以是设备的一部分，其可以包括各种设备及其组合中的任何一种，并且可以使用各种组合技术来从这样的半导体制造设备。

63. 发明授权

US07658991B2 Structures having aligned nanorods and methods of making 失效
标题翻译：具有对齐的纳米棒的结构和制备方法
公开(公告)号：US07658991B2
公开(公告)日：2010-02-09
申请号：US11256395
申请日：2005-10-21
申请人： Yiping Zhao , Jianguo Fan
发明人： Yiping Zhao , Jianguo Fan
IPC分类号： B32B5/16
CPC分类号： C23C14/505 , B82Y30/00 , C23C14/226 , C30B23/007 , C30B25/005 , C30B25/18 , C30B29/02 , C30B29/605 , Y10S977/89 , Y10T428/25 , Y10T428/2933 , Y10T428/2991
摘要： Substrates having nanostructures disposed thereon and methods of forming nanostructures on the substrates are disclosed. In particular, embodiments of the present invention provide for structures having a substrate having a non-planar surface. In an embodiment, a portion of the non-planar surface has at least one layer of nanostructures disposed thereon.
摘要翻译：公开了具有纳米结构的衬底及其在衬底上形成纳米结构的方法。特别地，本发明的实施例提供了具有非平面表面的基底的结构。在一个实施例中，非平面表面的一部分具有设置在其上的至少一层纳米结构。

64. 发明申请

US20090242869A1 SUPER LATTICE/QUANTUM WELL NANOWIRES 有权
标题翻译：超级尺寸/质量好的纳米尺寸
公开(公告)号：US20090242869A1
公开(公告)日：2009-10-01
申请号：US12054886
申请日：2008-03-25
申请人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
发明人： Harold J. Hovel , Qiang Huang , Xiaoyan Shao , James Vichiconti , George F. Walker
IPC分类号： H01L31/00 , H01L21/20 , H01L29/06
CPC分类号： H01L31/18 , B82Y10/00 , B82Y30/00 , C30B29/02 , C30B29/06 , C30B29/40 , C30B29/52 , C30B29/60 , C30B29/605 , C30B33/10 , H01L21/30604 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L29/125 , H01L31/0352 , H01L33/20
摘要： Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire.
摘要翻译：在没有模板的情况下通过从两种或更多种半导体材料的层状结构中去除材料来制造分段半导体纳米线。去除在层状结构的表面上的某些位置处发生，并且优选地沿着结晶轴的方向延伸，使得具有分段结构的纳米线保持在很少或不发生去除的位置。不同片段之间的界面可以垂直于纳米线的纵向方向或与之相垂直。

65. 发明授权

US07585474B2 Ternary oxide nanostructures and methods of making same 有权
标题翻译：三元氧化物纳米结构及其制备方法
公开(公告)号：US07585474B2
公开(公告)日：2009-09-08
申请号：US11581766
申请日：2006-10-13
申请人： Stanislaus S. Wong , Tae-Jin Park
发明人： Stanislaus S. Wong , Tae-Jin Park
IPC分类号： C01G1/02 , C01G29/00 , C01G49/02 , C01G49/04
CPC分类号： C04B35/62231 , B82Y25/00 , B82Y30/00 , C01G1/02 , C01G23/003 , C01G23/006 , C01G25/00 , C01G25/006 , C01G41/00 , C01G47/00 , C01G49/0018 , C01P2002/72 , C01P2002/82 , C01P2004/03 , C01P2004/04 , C01P2006/42 , C04B35/10 , C04B35/26 , C04B35/624 , C04B35/62675 , C04B35/803 , C04B2235/3272 , C04B2235/3298 , C04B2235/449 , C04B2235/5284 , C04B2235/5409 , C04B2235/5445 , C04B2235/5454 , C04B2235/76 , C04B2235/761 , C30B5/00 , C30B9/00 , C30B29/22 , C30B29/60 , C30B29/605 , H01F1/0045 , H01F1/0063 , H01F1/0072 , H01F1/0081 , Y10S977/893 , Y10S977/90
摘要： A single crystalline ternary nanostructure having the formula AxByOz, wherein x ranges from 0.25 to 24, and y ranges from 1.5 to 40, and wherein A and B are independently selected from the group consisting of Ag, Al, As, Au, B, Ba, Br, Ca, Cd, Ce, Cl, Cm, Co, Cr, Cs, Cu, Dy, Er, Eu, F, Fe, Ga, Gd, Ge, Hf, Ho, I, In, Ir, K, La, Li, Lu, Mg, Mn, Mo, Na, Nb, Nd, Ni, Os, P, Pb, Pd, Pr, Pt, Rb, Re, Rh, Ru, S, Sb, Sc, Se, Si, Sm, Sn, Sr, Ta, Tb, Tc, Te, Ti, Tl, Tm, U, V, W, Y, Yb, and Zn, wherein the nanostructure is at least 95% free of defects and/or dislocations.
摘要翻译：具有式AxByOz的单晶三元纳米结构，其中x为0.25至24，y为1.5至40，并且其中A和B独立地选自Ag，Al，As，Au，B，Ba ，Br，Ca，Cd，Ce，Cl，Cm，Co，Cr，Cs，Cu，Dy，Er，Eu，F，Fe，Ga，Gd，Ge，Hf，Ho，I，In，Ir，K，La ，Li，Lu，Mg，Mn，Mo，Na，Nb，Nd，Ni，Os，P，Pb，Pd，Pr，Pt，Rb，Re，Rh，Ru，S，Sb，Sc，Se，Si，Sm ，Sn，Sr，Ta，Tb，Tc，Te，Ti，Tl，Tm，U，V，W，Y，Yb和Zn，其中纳米结构至少不含缺陷和/或位错95％。

66. 发明申请

US20090196788A1 Methods For The Production Of Silver Nanowires 有权
标题翻译：银纳米线生产方法
公开(公告)号：US20090196788A1
公开(公告)日：2009-08-06
申请号：US12362960
申请日：2009-01-30
申请人： Yuliang Wang , Janet Cravens Dickerson
发明人： Yuliang Wang , Janet Cravens Dickerson
IPC分类号： C22C5/06
CPC分类号： B22F9/24 , B22F1/004 , B22F1/0044 , B22F2301/255 , B22F2998/00 , C22B11/04 , C22C5/06 , C30B7/14 , C30B29/02 , C30B29/605 , Y10S977/896 , B22F1/0025
摘要： Embodiments of the present invention are directed to novel methods for the solution-based production of silver nanowires by adaptation of the polyol process. Some embodiments of the present invention can be practiced at lower temperature and/or at higher concentration than previously described methods. In some embodiments reactants are added in solid form rather than in solution. In some embodiments, an acid compound is added to the reaction.
摘要翻译：本发明的实施方案涉及通过适应多元醇方法来溶液型生产银纳米线的新方法。本发明的一些实施方案可以在比先前描述的方法更低的温度和/或更高的浓度下实施。在一些实施方案中，反应物以固体形式而不是溶液中加入。在一些实施方案中，将酸化合物加入到反应中。

67. 发明授权

US07521034B2 3C-SiC nanowhisker 失效
标题翻译： 3C-SiC纳米晶须
公开(公告)号：US07521034B2
公开(公告)日：2009-04-21
申请号：US11648569
申请日：2007-01-03
申请人： Toshihiro Ando , Mika Gamo , Yafei Zhang
发明人： Toshihiro Ando , Mika Gamo , Yafei Zhang
IPC分类号： C01B31/36
CPC分类号： B82Y30/00 , C01B32/956 , C01P2002/72 , C01P2002/80 , C01P2004/04 , C01P2004/16 , C01P2004/51 , C01P2004/64 , C30B11/00 , C30B25/005 , C30B25/105 , C30B29/36 , C30B29/605 , C30B29/62 , Y10S423/10 , Y10T428/259 , Y10T428/2993
摘要： 3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particles (3), 3C-SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).
摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。该方法安全，成本低，晶须可以发出各种波长的可见光。通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间由氢和烃组成的等离子体。 Si衬底（1）中的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。

68. 发明授权

US07504152B1 Carbon nanotrees formed by flash CVD method 有权
标题翻译：通过闪速CVD法形成碳纳米管
公开(公告)号：US07504152B1
公开(公告)日：2009-03-17
申请号：US10781460
申请日：2004-02-17
申请人： Richard W. Siegel , John M. Nugent , Pulickel M. Ajayan
发明人： Richard W. Siegel , John M. Nugent , Pulickel M. Ajayan
IPC分类号： B32B5/16
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y40/00 , C01B32/18 , C23C16/26 , C23C16/46 , C30B25/00 , C30B25/005 , C30B29/02 , C30B29/605 , H01L51/0048 , H01L51/0052 , Y10S977/773 , Y10S977/777 , Y10T428/2982
摘要： A flash CVD process can be employed to grow micron- and nano-sized tree-like structures, particularly carbon structures on graphite electrodes. This process involves fast cyclic resistive heating of electrodes in an atmosphere of inert gas and hydrocarbons at below atmospheric pressure.
摘要翻译：可以使用快速CVD法来生长微米级和纳米级的树状结构，特别是石墨电极上的碳结构。该方法涉及在惰性气体和低于大气压的烃气氛下电极的快速循环电阻加热。

69. 发明授权

US07501081B2 Nanostructured titanium monoboride monolithic material and associated methods 有权
标题翻译：纳米结构单钛单体材料及相关方法
公开(公告)号：US07501081B2
公开(公告)日：2009-03-10
申请号：US11698743
申请日：2007-01-25
申请人： K. S. Ravi Chandran
发明人： K. S. Ravi Chandran
IPC分类号： C22C29/14 , C22C1/05 , C04B35/58 , H01B1/08
CPC分类号： C04B35/58071 , C04B35/581 , C04B35/645 , C04B2235/3813 , C04B2235/5276 , C04B2235/5296 , C04B2235/5436 , C04B2235/5463 , C04B2235/549 , C04B2235/96 , C30B25/005 , C30B29/10 , C30B29/605
摘要： A nanostructured monolithic titanium boride (TiB) material and methods of forming such a material are disclosed and described. This material has a room-temperature four-point flexural strength about three times that of commercially available titanium diboride (TiB2). The achievement of nanostructured internal microstructural arrangement having a network of interconnected titanium monoboride whiskers affords a very high strength to this material above some of the best ceramic materials available in the market. The material contains a small amount of titanium and a densifier, but it is largely made of TiB phase with substantially no TiB2. The nanostructured monolithic titanium boride material can be formed by high temperature processing of a powder precursor having carefully selected weight and size distributions of titanium powder, titanium diboride powder, and densifier powder. Potential applications of this material can include wear resistant components such as die inserts for extrusion dies, nozzles, armor, electrodes for metal refining etc. An important advantage of TiB over other hard ceramics is that TiB can be cut by electro-discharge machining (EDM) without difficulty, unlike most ceramics.
摘要翻译：公开并描述了纳米结构的整体式钛硼化物（TiB）材料和形成这种材料的方法。该材料具有约为市售二硼化钛（TiB 2）的三倍的室温四点弯曲强度。纳米结构的内部微结构布置的实现具有相互连接的钛单晶须晶的网络，为市场上可获得的一些最佳陶瓷材料提供了非常高的强度。该材料含有少量的钛和致密剂，但它主要由基本上不含TiB 2的TiB相制成。纳米结构的整体式钛硼化物材料可以通过具有仔细选择的钛粉末，二硼化钛粉末和增稠剂粉末的重量和尺寸分布的粉末前体的高温加工形成。这种材料的潜在应用可以包括耐磨组件，例如用于挤出模具的模具插入件，喷嘴，装甲，用于金属精炼等的电极.TiB比其它硬质陶瓷的重要优点是TiB可以通过放电加工（EDM ）没有困难，不像大多数陶瓷。

70. 发明授权

US07494840B2 Optical device with IrOx nanostructure electrode neural interface 失效
标题翻译：具有IrOx纳米结构电极神经界面的光学器件
公开(公告)号：US07494840B2
公开(公告)日：2009-02-24
申请号：US11496157
申请日：2006-07-31
申请人： Fengyan Zhang , Sheng Teng Hsu
发明人： Fengyan Zhang , Sheng Teng Hsu
IPC分类号： H01L21/00
CPC分类号： C30B25/00 , A61N1/0543 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C30B29/16 , C30B29/605 , Y10S977/811 , Y10S977/904 , Y10S977/932
摘要： An optical device with an iridium oxide (IrOx) electrode neural interface, and a corresponding fabrication method are provided. The method provides a substrate and forms a first conductive electrode overlying the substrate. A photovoltaic device having a first electrical interface is connected to the first electrode. A second electrical interface of the photovoltaic device is connected to a second conductive electrode formed overlying the photovoltaic device. An array of neural interface single-crystal IrOx nanostructures are formed overlying the second electrode, where x≦4. The IrOx nanostructures can be partially coated with an electrical insulator, such as SiO2, SiN, TiO2, or spin on glass (SOG), leaving the IrOx distal ends exposed. In one aspect, a buffer layer is formed overlying the second electrode surface, made from a material such as LiNbO3, LiTaO3, or SA, for the purpose of orienting the growth direction of the IrOx nanostructures.
摘要翻译：提供了具有氧化铱（IrOx）电极神经接口的光学器件及相应的制造方法。该方法提供了一个衬底并且形成了覆盖衬底的第一导电电极。具有第一电接口的光电器件连接到第一电极。光电器件的第二电接口连接到形成在光伏器件上的第二导电电极。形成了覆盖第二电极的神经界面单晶IrOx纳米结构阵列，其中x <= 4。 IrOx纳米结构可以部分地涂覆有电绝缘体，例如SiO 2，SiN，TiO 2或旋转玻璃（SOG），留下IrOx远端暴露。在一个方面，为了定向IrOx纳米结构的生长方向，形成了由诸如LiNbO 3，LiTaO 3或SA的材料制成的第二电极表面上的缓冲层。

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