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    • 64. 发明授权
    • Chip varistor
    • 片式压敏电阻
    • US08525634B2
    • 2013-09-03
    • US13587326
    • 2012-08-16
    • Kaname UedaKatsunari MoriaiTakahiro Itami
    • Kaname UedaKatsunari MoriaiTakahiro Itami
    • H01C7/10
    • H01C1/148H01C7/1006H01C7/112
    • A chip varistor is provided with a varistor section, a plurality of electroconductive sections, and a plurality of terminal electrodes. The varistor section is comprised of a sintered body containing ZnO as a major component and is configured to exhibit the nonlinear voltage-current characteristics. The plurality of electroconductive sections are comprised of sintered bodies containing ZnO as a major component and arranged with the varistor section in between, and each electroconductive section has a first principal surface connected to the varistor section and a second principal surface opposed to the first principal surface. The plurality of terminal electrodes are connected respectively to the corresponding electroconductive sections. Each terminal electrode has a first electrode portion connected to the second principal surface and a second electrode portion connected to the first electrode portion.
    • 芯片变阻器设置有变阻器部分,多个导电部分和多个端子电极。 变阻器部由以ZnO为主要成分的烧结体构成,具有非线性的电压 - 电流特性。 所述多个导电部由以ZnO为主要成分的烧结体构成,并且在其间配置有可变电阻部,各导电部具有连接到所述变阻器部的第一主面和与所述第一主面相反的第二主面 。 多个端子电极分别连接到相应的导电部分。 每个端子电极具有连接到第二主表面的第一电极部分和连接到第一电极部分的第二电极部分。
    • 67. 发明授权
    • Laminated surface mounting type thermistor and manufacturing method thereof
    • 层压表面安装型热敏电阻及其制造方法
    • US08451084B2
    • 2013-05-28
    • US13145040
    • 2009-06-29
    • Jinhua HuangPengxing WangQingguo GongYuzheng ShiJiangquan Liao
    • Jinhua HuangPengxing WangQingguo GongYuzheng ShiJiangquan Liao
    • H01C7/10
    • H01C7/18H01C1/1406H01C1/148H01C7/027Y10T29/49085
    • A laminated SMD-type thermistor has a conductive module, a left and a right conductive metal layer. The conductive module includes a core conductive module coated with an insulating layer on the upper and lower surface, and the left and right side. The core conductive module includes at least one conductive unit piled up in sequence, two conductive units are separated by an insulating material layer. The conductive unit includes an upper metal foil, a conductive polymer chip and a lower metal foil which are laminated in sequence from top to bottom. A left and right conductive metal layer are coated on the left and right part of the conductive module respectively, and penetrate the insulating layer partially, to connect with two metal foils of the conductive unit respectively. The laminated SMD-type thermistor can further comprise two plating resistant films coated on the upper and lower surface of the conductive module.
    • 层压SMD型热敏电阻具有导电模块,左右导电金属层。 导电模块包括在上表面和下表面以及左侧和右侧涂覆有绝缘层的芯导电模块。 芯导电模块包括依次堆积的至少一个导电单元,两个导电单元由绝缘材料层隔开。 导电单元包括从上到下依次层叠的上金属箔,导电聚合物芯片和下金属箔。 分别在导电模块的左右部分涂覆左右导电金属层,并部分地穿透绝缘层,分别与导电单元的两个金属箔连接。 层叠的SMD型热敏电阻还可以包括涂覆在导电模块的上表面和下表面上的两个耐电镀膜。
    • 68. 发明授权
    • Over-current protection device
    • 过电流保护装置
    • US08446245B2
    • 2013-05-21
    • US13235663
    • 2011-09-19
    • David Shau Chew WangYi An ShaKuo Chang LoTai Kuang Hei
    • David Shau Chew WangYi An ShaKuo Chang LoTai Kuang Hei
    • H01C7/10
    • H01C7/027
    • An over-current protection device includes two metal foils and a PTC material layer laminated therebetween. The PTC material layer has a volume resistivity between 0.07 Ω-cm and 0.32 Ω-cm. The PTC material layer includes a crystalline polymer, a conductive ceramic carbide filler of a particle size between 0.1 μm and 50 μm and a volume resistivity less than 0.1 Ω-cm, and a carbon black filler. The weight ratio of the carbon black filler to the conductive ceramic carbide filler is between 1:90 and 1:4. The conductive ceramic carbide filler and the carbon black filler are dispersed in the crystalline polymer. The resistance ratio R100/Ri is between 3 and 20.
    • 过电流保护装置包括两个金属箔和层叠在其间的PTC材料层。 PTC材料层的体积电阻率在0.07欧姆 - 厘米至0.32欧姆 - 厘米。 PTC材料层包括结晶聚合物,粒径在0.1μm和50μm之间的导电陶瓷碳化物填料和体积电阻率小于0.1Ω-cm,以及炭黑填料。 碳黑填料与导电陶瓷碳化物填料的重量比为1:90至1:4。 导电陶瓷碳化物填料和炭黑填料分散在结晶聚合物中。 电阻比R100 / Ri在3和20之间。