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71. 发明授权

US07387954B2 Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device 有权
公开(公告)号：US07387954B2
公开(公告)日：2008-06-17
申请号：US11240470
申请日：2005-10-03
申请人： Koichiro Tanaka , Hirotada Oishi
发明人： Koichiro Tanaka , Hirotada Oishi
IPC分类号： H01L21/428 , H01L21/84
CPC分类号： H01L21/02617 , G02B6/001 , G02B6/0048 , G02B6/0055 , G02B6/262 , G02B27/0927 , G02B27/095 , G02B27/0977 , G02B27/0994
摘要： The present invention is to provide a beam homogenizer, a laser irradiation apparatus, and a method for manufacturing a semiconductor device, which can suppress the loss of a laser beam and form a beam spot having homogeneous energy distribution constantly on an irradiation surface without being affected by beam parameters of a laser beam. A deflector is provided at an entrance of an optical waveguide or a light pipe used for homogenizing a laser beam emitted from a laser oscillator. A pair of reflection planes of the deflector is provided so as to have a tilt angle to an optical axis of the laser beam, whereby the entrance of the optical waveguide or the light pipe is expanded. Accordingly, the loss of the laser beam can be suppressed. Moreover, by providing an angle adjusting mechanism to the deflector, a beam spot having homogeneous energy distribution can be formed at an exit of the optical waveguide.

72. 发明申请

US20080132041A1 Laser irradiation apparatus, laser irradiation method, and method for manufacturing a semiconductor device 失效
标题翻译：激光照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US20080132041A1
公开(公告)日：2008-06-05
申请号：US11987050
申请日：2007-11-27
申请人： Shunpei Yamazaki , Koichiro Tanaka
发明人： Shunpei Yamazaki , Koichiro Tanaka
IPC分类号： H01L21/26
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/073
摘要： A second laser light of a continuous wave oscillation is irradiated to a region melted by a first laser light of a pulsed oscillation having a harmonic. Specifically, the first laser light has a wavelength not longer than that of visible light (830 nm, preferably not more than 780 nm). The absorption coefficient of the second laser light to a semiconductor film considerably increases because the semiconductor film is melted by the first laser light, and therefore the second laser light becomes easy to be absorbed in the semiconductor film.
摘要翻译：将连续波振荡的第二激光照射到由具有谐波的脉冲振荡的第一激光熔化的区域中。具体而言，第一激光的波长不比可见光的波长（830nm，优选为780nm以下）。由于半导体膜被第一激光熔化，因此第二激光对半导体膜的吸收系数显着增加，因此第二激光容易被半导体膜吸收。

73. 发明申请

US20080131663A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080131663A1
公开(公告)日：2008-06-05
申请号：US11945891
申请日：2007-11-27
申请人： Koichiro TANAKA , Takatsugu OMATA
发明人： Koichiro TANAKA , Takatsugu OMATA
IPC分类号： B32B3/30 , H01L21/20
CPC分类号： H01L21/0243 , H01L21/02532 , H01L21/02587 , H01L21/02658 , H01L21/02672 , H01L21/02683 , H01L21/268 , H01L27/1281 , H01L27/1285 , H01L29/66757 , H01L29/66825 , H01L29/78675 , H01L29/7881 , Y10T428/24355
摘要： To form a semiconductor film with a thickness of 50 nm or less, which includes a large grain crystal by totally melting the semiconductor film with a laser beam. A projection having a triangular cross section is formed on the surface of a semiconductor film. The shape of the projection is a conical shape or a triangular prismatic shape. A laser beam which has entered a projection of the semiconductor film travels toward a substrate while being greatly refracted and totally reflected at the interface between the projection and the air. Further, since the laser beam enters the semiconductor film from a projection, the laser beam which is incident on the interface between an insulating film and a semiconductor is very likely totally reflected. Thus, when a laser beam enters a semiconductor film from a projection, the time during which the laser beam propagates through the semiconductor film is longer, which can increase the absorptance of the semiconductor film.
摘要翻译：为了形成厚度为50nm以下的半导体膜，其通过用激光束全部熔融半导体膜而形成大晶粒。在半导体膜的表面上形成具有三角形截面的突起。突起的形状是圆锥形或三角棱柱形。已经进入半导体膜的投影的激光束在朝向基板的同时大大折射并且在突起和空气之间的界面处全反射。此外，由于激光束从投影部进入半导体膜，入射到绝缘膜和半导体之间的界面的激光束很可能被完全反射。因此，当激光束从投影进入半导体膜时，激光束通过半导体膜传播的时间更长，这可以增加半导体膜的吸收率。

74. 发明申请

US20080118010A1 Phase error correction circuit and receiver incorporating the same 有权
公开(公告)号：US20080118010A1
公开(公告)日：2008-05-22
申请号：US12003933
申请日：2008-01-03
申请人： Hideki Nakahara , Koichiro Tanaka , Kenichi Mori , Yoshio Urabe , Hitoshi Takai
发明人： Hideki Nakahara , Koichiro Tanaka , Kenichi Mori , Yoshio Urabe , Hitoshi Takai
IPC分类号： H04L27/06
CPC分类号： H04L7/041 , H04L7/0334 , H04L7/046 , H04L27/2332 , H04L2027/0036 , H04L2027/0067 , H04L2027/0095
摘要： A detected signal 111 contains a preamble portion which includes symbol alternations, followed by a unique word portion, and a data portion. Each time a symbol alternation is detected, a correction value calculation section 102 averages the phase shift in the detected signal 111 for a predetermined length, thereby calculating a correction value 115. The correction value determination section 103 stores a plurality of correction values 115 in a chronological order. When the unique word portion is detected, the correction value determination section 103 retains, as an effective correction value 118, a correction value which is arrived at by going back a predetermined number of correction values among the stored correction values. A phase rotation section 104 corrects the phase of the detected signal 111 by using an effective correction value 118 calculated by the correction value determination section 103.

75. 发明授权

US07374985B2 Laser irradiation apparatus and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置及半导体装置的制造方法
公开(公告)号：US07374985B2
公开(公告)日：2008-05-20
申请号：US10989341
申请日：2004-11-17
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： H01L21/20
CPC分类号： H01L27/1285 , H01L21/268 , H01L27/1214 , H01L27/1277
摘要： The linear laser beam generally has a width of 1 mm or less, and it is necessary to adjust the optical system with high accuracy in order to form the laser beam having such a narrow width and having a homogeneous intensity distribution. The adjustment of the optical system requires a large amount of time, and the laser irradiation apparatus using this optical system cannot be used during the adjustment of the optical system. This causes the throughput to decrease. The present invention is made to facilitate a readjustment of the optical system and to shorten the time required for it. When the misalignment of the laser beam is corrected to keep the incident position in the optical system the same by moving the laser beam parallel with the use of a single optical element, it is no longer necessary to readjust all the optical elements, and therefore the time can be saved.
摘要翻译：线性激光束通常具有1mm以下的宽度，为了形成具有这样窄的宽度并具有均匀的强度分布的激光束，需要高精度地调整光学系统。光学系统的调整需要大量的时间，并且在光学系统的调整期间不能使用使用该光学系统的激光照射装置。这导致吞吐量降低。本发明是为了便于重新调整光学系统并缩短所需的时间。当通过使用单个光学元件平行移动激光束来校正激光束的未对准以保持光学系统中的入射位置相同时，不再需要重新调整所有光学元件，因此，时间可以节省。

76. 发明授权

US07372630B2 Laser, irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device 有权
标题翻译：激光，照射装置，激光照射方法以及半导体装置的制造方法
公开(公告)号：US07372630B2
公开(公告)日：2008-05-13
申请号：US10217477
申请日：2002-08-14
申请人： Koichiro Tanaka
发明人： Koichiro Tanaka
IPC分类号： G02B27/10
CPC分类号： G02B27/102 , G02B27/09 , G02B27/0905 , G02B27/123 , G02B27/126
摘要： Providing a method and apparatus for efficiently irradiating a uniform laser light on an irradiation surface even when a laser light of high coherence or a large size substrate is used. The laser irradiation apparatus of the invention comprises a laser; means for dividing a laser light emitted from the laser into plural laser beams; means for synthesizing the laser beams on the irradiation surface or place in the vicinity thereof thereby forming a laser light having a periodical energy distribution; and means for moving the substrate relative to the laser light. Such a laser irradiation apparatus may be used to anneal the overall surface of a semiconductor film.
摘要翻译：提供即使在使用高相干或大尺寸基板的激光的情况下，也可以在照射面上有效地照射均匀的激光的方法和装置。本发明的激光照射装置包括激光器; 用于将从激光发射的激光分成多个激光束的装置; 用于在其附近的照射表面或地方合成激光束的装置，从而形成具有周期性能量分布的激光; 以及用于相对于激光器移动衬底的装置。这种激光照射装置可以用于退火半导体膜的整个表面。

77. 发明申请

US20080108229A1 Manufacturing Method of Semiconductor Device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20080108229A1
公开(公告)日：2008-05-08
申请号：US11876981
申请日：2007-10-23
申请人： Koichiro Tanaka , Shunpei Yamazaki
发明人： Koichiro Tanaka , Shunpei Yamazaki
IPC分类号： H01L21/02
CPC分类号： H01L21/76802 , B23K26/0613 , B23K26/40 , B23K2103/172 , H01L27/124 , H01L27/1288
摘要： In a manufacturing process of a semiconductor device, a manufacturing technique of a semiconductor device by which a lithography step that uses a photoresist is simplified is provided. A manufacturing cost is reduced and throughput is improved. An irradiation object is formed over a substrate by sequentially stacking a first material layer and a second material layer. The irradiation object is irradiated with a first laser beam that is absorbed by the first material layer and a second laser beam that is absorbed by the second material layer so that the laser beams overlap. A part or all of the region irradiated with an overlap part of the laser beams is ablated to form an opening.
摘要翻译：在半导体器件的制造工艺中，提供了简化使用光致抗蚀剂的光刻步骤的半导体器件的制造技术。制造成本降低，生产量提高。通过依次层叠第一材料层和第二材料层，在基板上形成照射物体。照射物体被被第一材料层吸收的第一激光束和被第二材料层吸收的激光束重叠的第二激光束照射。用激光束的重叠部分照射的部分或全部区域被烧蚀以形成开口。

78. 发明申请

US20080090344A1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080090344A1
公开(公告)日：2008-04-17
申请号：US11987311
申请日：2007-11-29
申请人： Hideaki Kuwabara , Koichiro Tanaka
发明人： Hideaki Kuwabara , Koichiro Tanaka
IPC分类号： H01L21/84
CPC分类号： H01L27/1251 , G09G3/3208 , G09G2300/0857 , H01L27/1214 , H01L27/1233 , H01L27/127 , H01L27/3244 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78648
摘要： It is an object of the invention that, in semiconductor device, in order to promote the tendency of miniaturization of each display pixel pitch, which will be resulted in with the tendency toward the higher precision (increase of pixel number) and further miniaturizations, a plurality of elements is formed within a limited area and the area occupied by the elements is compacted so as to be integrated. A plurality of semiconductor layers 13, 15 is formed on different layers with insulating film 14 sandwiched therebetween. After carrying out crystallization by means of laser beam, on each semiconductor layer (semiconductor layers 16, 17 having crystal structure respectively), an N-channel type TFT of inversed stagger structure and a P-channel type TFT 30 of top gate structure are formed respectively and integrated so that the size of CMOS circuit is miniaturized.
摘要翻译：本发明的目的在于，在半导体装置中，为了提高每个显示像素间距的小型化的趋势，这将随着更高的精度（像素数的增加）和进一步的小型化的趋势而导致，在有限的区域内形成多个元件，并且元件所占据的区域被压实成一体。多个半导体层13,15形成在夹着绝缘膜14的不同层上。在通过激光束进行结晶之后，在每个半导体层（分别具有晶体结构的半导体层16,17）上形成反向交错结构的N沟道型TFT和顶栅结构的P沟道型TFT 30 并且集成使得CMOS电路的尺寸小型化。

79. 发明申请

US20080090341A1 METHOD FOR MANUFACTURING DISPLAY DEVICE, AND ETCHING APPARATUS 有权
标题翻译：制造显示装置的方法和蚀刻装置
公开(公告)号：US20080090341A1
公开(公告)日：2008-04-17
申请号：US11870530
申请日：2007-10-11
申请人： Koichiro TANAKA , Masafumi MORISUE
发明人： Koichiro TANAKA , Masafumi MORISUE
IPC分类号： H01L21/336 , H01L21/306 , H01L21/4763
CPC分类号： G02F1/136227 , H01L21/31111 , H01L21/31116 , H01L21/32134 , H01L21/32135 , H01L21/6708 , H01L21/76802 , H01L21/76804 , H01L21/76816 , H01L21/76817 , H01L27/124 , H01L27/1248 , H01L29/66765 , Y02P80/30
摘要： A tube is arranged to be in contact with an insulating layer in an opening formation region, and a treatment agent (etching gas or etchant) is discharged to the insulating layer through the tube. With the discharged treatment agent (etching gas or etchant), the insulating layer is selectively removed to form an opening in the insulating layer. Therefore, the insulating layer provided with the opening is formed over a first conductive layer, and the first conductive layer below the insulating layer is exposed at the bottom of the opening. A second conductive layer is formed in the opening to be in contact with an exposed part of the first conductive layer, so that the first conductive layer and the second conductive layer are electrically connected in the opening provided in the insulating layer.
摘要翻译：管被布置成与开口形成区域中的绝缘层接触，并且处理剂（蚀刻气体或蚀刻剂）通过管被排出到绝缘层。使用排出的处理剂（蚀刻气体或蚀刻剂），绝缘层被选择性地去除以在绝缘层中形成开口。因此，设置有开口的绝缘层形成在第一导电层上，并且绝缘层下方的第一导电层在开口的底部露出。第二导电层形成在开口中以与第一导电层的暴露部分接触，使得第一导电层和第二导电层在设置在绝缘层中的开口中电连接。

80. 发明申请

US20080081298A1 LASER IRRADIATION APPARATUS AND LASER IRRADIATION METHOD 有权
标题翻译：激光辐射装置和激光辐照方法
公开(公告)号：US20080081298A1
公开(公告)日：2008-04-03
申请号：US11861456
申请日：2007-09-26
申请人： Koichiro TANAKA
发明人： Koichiro TANAKA
IPC分类号： H01S3/13 , G03F7/20
CPC分类号： G03F7/70383 , H01S3/005
摘要： It is an object of the present invention to provide a laser irradiation apparatus and a laser irradiation method that increase energy intensity distribution in a region having low energy intensity distribution in an end region in a major-axis direction of laser light, in performing laser irradiation. In irradiating an irradiation surface with laser light, laser light oscillated from a laser oscillator is converged in one direction through an optical element. The laser light which passes through the optical element and which is converged in one direction passes through a means which shields an end region in a major-axis direction of the laser light. Accordingly, a region where energy intensity distribution is precipitously high in the end region in the major-axis direction of the laser light can be formed in the irradiation surface.
摘要翻译：本发明的目的是提供一种激光照射装置和激光照射方法，该激光照射装置和激光照射方法在激光照射中在激光的长轴方向的端部区域中增加能量强度分布低的区域的能量强度分布。在用激光照射照射面的情况下，从激光振荡器振荡的激光通过光学元件沿一个方向会聚。穿过光学元件并沿一个方向会聚的激光通过屏蔽激光长轴方向的端部区域的装置。因此，能够在照射面上形成激光的长轴方向的端部区域的能量强度分布急剧下降的区域。

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