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热词
    • 80. 发明授权
    • Circuit incorporated IGBT and power conversion device using the same
    • 电路并入IGBT和使用其的功率转换器件
    • US06448587B1
    • 2002-09-10
    • US09985977
    • 2001-11-07
    • Yasuhiko KohnoMutsuhiro MoriJunpei Uruno
    • Yasuhiko KohnoMutsuhiro MoriJunpei Uruno
    • H01L2974
    • H01L29/7395H01L27/0623
    • A circuit incorporated IGBT is provided with a semiconductor substrate having an IGBT area and a circuit area which are adjacent to each other. In a semiconductor layer of one conductivity type in which a circuit element is formed in the circuit area, there is provided another semiconductor layer of another conductivity type which adjoins the circuit element and has an impurity concentration higher than that of the semiconductor layer of the one conductivity type. An electrode contacts the other semiconductor layer and is connected to an electrode of the IGBT. Carriers are ejected from the other semiconductor layer to the electrode of the IGBT, thereby making it possible to prevent an erroneous operation of the circuit.
    • 集成IGBT的IGBT设置有具有彼此相邻的IGBT区域和电路区域的半导体衬底。 在电路区域中形成有电路元件的一种导电型的半导体层中,提供另一导电类型的另一半导体层,该半导体层与电路元件邻接,杂质浓度高于该半导体层的半导体层 导电类型。 电极与另一半导体层接触并连接到IGBT的电极。 载体从另一半导体层弹出到IGBT的电极,从而可以防止电路的错误操作。