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    • 71. 发明授权
    • Remote starting circuit and method for brushless DC motor
    • 无刷直流电机远程启动电路及方法
    • US5650699A
    • 1997-07-22
    • US534171
    • 1995-09-26
    • Shi Ming TangSang Woo LeeSang Yong Lee
    • Shi Ming TangSang Woo LeeSang Yong Lee
    • H02P6/08H02P6/00H02P6/18H02P6/20
    • H02P6/21
    • A remote starting control circuit for a polyphase motor includes a controller, a zero-crosspoint detector, a power switch, a commutation circuit and a motor drive output circuit. The controller controls an excitation current applied to the motor. When the motor starts normally, it is accelerated in accordance with a detected zero-crosspoint. If the zero-crosspoint detector indicates that the motor has not started under optimal conditions, the controller adjusts a power-OFF interval and an excitation pulse width and re-starts the motor accordingly. Because of the ability to controllably adjust the starting of the motor under various excitation conditions, the motor can be started successfully without such problems as torque dead-point, head sticking and insufficient starting torque.
    • 用于多相电动机的遥控启动控制电路包括控制器,零交叉点检测器,电源开关,换向电路和电动机驱动输出电路。 控制器控制施加到电机的励磁电流。 当电机正常启动时,根据检测到的零交叉点加速。 如果零交叉点检测器指示电机在最佳条件下没有启动,则控制器调节关断间隔和激励脉冲宽度,并相应地重新启动电机。 由于能够在各种激励条件下可靠地调节电动机的启动,所以可以成功地启动电动机,而不会出现转矩死点,头部粘附和起动转矩不足等问题。
    • 72. 发明授权
    • Protective circuit for fluorescent lamp stabilizer
    • 荧光灯稳定器保护电路
    • US5051661A
    • 1991-09-24
    • US516764
    • 1990-04-30
    • Sang-Woo Lee
    • Sang-Woo Lee
    • H05B41/285
    • H05B41/2853Y10S315/07
    • A protective circuit for a fluorescent lamp includes a stabilizer circuit for preventing breakdown of the lamp as it becomes worn. Known stabilizers are high speed switching circuits which can break down and become unstable in certain conditions to cause an on-off cycling of the lamp. This is prevented by a protective circuit, according to the present invention, which incorporates a thyristor connected to a blocking transistor. A sensing element triggers the thyristor in response to an abnormal voltage or in response to an overheated condition. The thyristor then activates a transistor to open the lamp control circuit and to prevent its reclosing, thereby holding the lamp off.
    • 用于荧光灯的保护电路包括一个稳定电路,用于防止灯在磨损时发生故障。 已知的稳定器是高速开关电路,其在某些条件下会分解并变得不稳定,从而导致灯的开 - 关循环。 这通过根据本发明的保护电路来防止,其包括连接到阻塞晶体管的晶闸管。 感测元件响应于异常电压或响应于过热状况而触发晶闸管。 然后,晶闸管激活晶体管以打开灯控制电路并防止其重新闭合,从而将灯关闭。
    • 79. 发明授权
    • High-speed pipelined ARIA encryption apparatus
    • 高速流水线ARIA加密装置
    • US08509428B2
    • 2013-08-13
    • US12509347
    • 2009-07-24
    • Sang Woo LeeByung Ho ChungJeong Nyeo Kim
    • Sang Woo LeeByung Ho ChungJeong Nyeo Kim
    • H04L9/30
    • H04L9/0631H04L2209/122H04L2209/125
    • There is provided a high-speed pipelined ARIA encryption apparatus. The high-speed pipelined ARIA encryption apparatus includes a round key generator for generating a plurality of round keys required for performing an encryption operation using a master key formed to have uniform bits, a plurality of round units whose number is in proportion to the number of times of round operations corresponding to the number of bit of an input value to receive the round keys and the input value and to perform the round operations, and a plurality of pipelined register provided between the round units to transmit the output value of a previous round unit as the input value of the next round unit. A plurality of round units are provided and pipelined registers are inserted between the round units so that it is possible to improve the performance of processing a large amount of data and to perform ARIA encryption at high speed.
    • 提供了一种高速流水线ARIA加密装置。 高速流水线ARIA加密装置包括:循环密钥发生器,用于生成使用形成为具有均匀比特的主密钥执行加密操作所需的多个循环密钥;多个圆形单元,其数量与 对应于接收轮回键的输入值的位数和输入值并执行循环操作的圆周运算次数,以及设置在圆形单元之间的多个流水线寄存器,以传送前一轮的输出值 单位作为下一轮单位的输入值。 提供多个圆形单元,并且在圆形单元之间插入流水线寄存器,使得可以提高处理大量数据的性能并高速执行ARIA加密。
    • 80. 发明授权
    • Semiconductor device and method of fabricating the same
    • 半导体装置及其制造方法
    • US08470703B2
    • 2013-06-25
    • US13105195
    • 2011-05-11
    • Byung-Hak LeeYu-Gyun ShinSang-Woo LeeSun-Ghil LeeJin-Bum KimJoon-Gon Lee
    • Byung-Hak LeeYu-Gyun ShinSang-Woo LeeSun-Ghil LeeJin-Bum KimJoon-Gon Lee
    • H01L21/3205
    • H01L21/28518H01L21/823807H01L21/823814
    • Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time. The sequentially performed first and second heat-treatment processes convert the Ni metal layer on the source and drain regions into a NiSi layer on the source and drain regions and a NiSi2 layer between the NiSi layer and the source and drain regions.
    • 形成半导体器件的方法包括提供具有包括晶体管的源极和漏极区域的区域的衬底。 在包括源极和漏极区域的衬底区域上形成镍(Ni)金属膜。 执行第一热处理工艺,包括以第一斜率从第一温度至第二温度加热包括金属膜的基板,并将包含金属膜的基板在第二温度下保持第一时间段。 然后执行第二热处理工艺,包括以第二斜率从第三温度至第四温度加热包括金属膜的衬底,并将衬底保持在第四温度第二时间段。 第四温度与第二温度不同,第二时间段与第一时间段不同。 依次执行的第一和第二热处理工艺将源极和漏极区域上的Ni金属层转换成源极和漏极区域上的NiSi层以及NiSi层与源极和漏极区域之间的NiSi 2层。