专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

71. 发明授权

US07527668B2 Method for manufacturing metal fine particles, metal fine particles manufactured thereby, and composition, light absorbing material and applied products containing the same 有权
标题翻译：制造金属微粒的方法，由此制造的金属微粒，以及组合物，光吸收材料和含有此的金属微粒
公开(公告)号：US07527668B2
公开(公告)日：2009-05-05
申请号：US11571316
申请日：2005-07-06
申请人： Hiroki Hirata , Yoshiaki Takata , Jun-etsu Satoh , Daigou Mizoguchi , Masato Murouchi
发明人： Hiroki Hirata , Yoshiaki Takata , Jun-etsu Satoh , Daigou Mizoguchi , Masato Murouchi
IPC分类号： B22F9/24
CPC分类号： C09C1/62 , B22F1/0025 , B22F9/24 , B82Y30/00 , C01P2002/84 , C01P2004/16 , C01P2004/32 , C01P2004/54 , C01P2004/62 , C08K3/08 , C08K9/04 , C08K2201/016 , C09D7/62 , C09D7/67 , C09D7/68 , C09D11/037 , C30B7/14 , C30B29/02 , C30B29/60 , Y10T428/12014
摘要： This method for manufacturing metal fine particles includes using an aqueous solution containing an amine having a reducing capacity and an ammonium salt having substantially no reducing capacity so as to reduce metal ions with said amine in a presence of said ammonium salt, thereby manufacturing rod-shaped metal fine particles. This metal fine particles are manufactured by this method for manufacturing metal fine particles, and have a major axis of 400 nm or less, a minor axis of 15 nm or less, and an aspect ratio of more than 1.
摘要翻译：该金属微粒的制造方法包括使用含有还原能力的胺水溶液和基本上没有还原能力的铵盐，以便在所述铵盐存在下用所述胺还原金属离子，由此制造棒状金属微粒。该金属微粒通过该金属微粒的制造方法制造，长轴为400nm以下，短轴为15nm以下，长径比大于1。

72. 发明申请

US20080178973A1 Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof 审中-公开
公开(公告)号：US20080178973A1
公开(公告)日：2008-07-31
申请号：US12077862
申请日：2008-03-21
申请人： Hidetoshi Uchida , Tadashi Minoda , Mineo Asano , Yoshikazu Ozeki , Tsutomu Furuyama
发明人： Hidetoshi Uchida , Tadashi Minoda , Mineo Asano , Yoshikazu Ozeki , Tsutomu Furuyama
IPC分类号： C22F1/05
CPC分类号： C22C21/06 , C22C21/02 , C22C21/08 , C22F1/043 , C22F1/047 , C22F1/05 , C30B25/18 , C30B29/02
摘要： A sheet of a 6000 type aluminum alloy containing Si and Mg as main alloy components and having an excellent formability sufficient to allow flat hemming, excellent resistance to denting, and good hardenability during baking a coating, which exhibits an anisotropy of Lankford values of more than 0.4 or the strength ratio for cube orientations of the texture thereof of 20 or more, and exhibits a minimum bend radius of 0.5 mm or less at 180° bending, even when the offset yield strength thereof exceeds 140 MPa through natural aging; and a method for producing the sheet of the aluminum alloy, which includes the steps of subjecting an ingot to a homogenization treatment, cooling to a temperature lower than 350° C. at a cooling rate of 100° C./hr or more, optionally to room temperature, heating again to a temperature of 300 to 500° C. and subjecting it to hot rolling, cold rolling the hot rolled product, and subjecting the cold rolled sheet to a solution treatment at a temperature of 400° C. or higher, followed by quenching.

73. 发明授权

US07399359B2 Method and system for providing a thin film with a controlled crystal orientation using pulsed laser induced melting and nucleation-initiated crystallization 失效
标题翻译：使用脉冲激光诱导熔融和成核引发结晶来提供具有受控晶体取向的薄膜的方法和系统
公开(公告)号：US07399359B2
公开(公告)日：2008-07-15
申请号：US10953312
申请日：2004-09-29
申请人： James S. Im , Jae Beom Choi
发明人： James S. Im , Jae Beom Choi
IPC分类号： H01L21/00 , H01L21/31
CPC分类号： H01L21/76867 , B23K26/066 , C30B13/24 , C30B29/02 , H01L21/76838
摘要： Method and system for generating a metal thin film with a uniform crystalline orientation and a controlled crystalline microstructure are provided. For example, a metal layer is irradicated with a pulsed laser to completely melt the film throughout its entire thickness. The metal layer can then resolidify to form grains with a substantially uniform orientation. The resolidified metal layer can be irradiated with a sequential lateral solidification technique to modify the crystalline microstructure (e.g., create larger grains, single-crystal regions, grain boundary controlled microstructures, etc.) The metal layer can be irradiated by patterning a beam using a mask which includes a first region capable of attenuating the pulsed laser and a second region allowing complete irradiation of sections of the thin film being impinged by the masked laser beam. An inverse dot-patterned mask can be used, the microstructure that may have substantially the same as the geometric pattern as that of the dots of the mask.
摘要翻译：提供了用于产生具有均匀结晶取向和受控结晶微结构的金属薄膜的方法和系统。例如，用脉冲激光对金属层进行辐射，以使其在整个厚度上完全熔化。然后可以将金属层重新固化以形成具有基本均匀取向的晶粒。可以用连续的侧向固化技术照射再固化的金属层，以改变结晶微结构（例如，产生更大的晶粒，单晶区域，晶界控制的微结构等）。金属层可以通过使用掩模，其包括能够衰减所述脉冲激光的第一区域和允许被所述被掩模的激光束照射所述薄膜的部分的完全照射的第二区域。可以使用反点阵图案掩模，该微结构可以具有与掩模点的几何图案基本相同的微结构。

74. 发明申请

US20080152912A1 Particulate Powder of Silver and Method of Manufacturing Same 有权
标题翻译：银颗粒粉和制造方法相同
公开(公告)号：US20080152912A1
公开(公告)日：2008-06-26
申请号：US11883344
申请日：2006-02-01
申请人： Kimitaka Sato
发明人： Kimitaka Sato
IPC分类号： B32B15/04 , B05D3/10
CPC分类号： B22F9/24 , B22F1/0018 , B22F1/0062 , B22F2998/00 , B22F2999/00 , B82Y30/00 , C30B7/00 , C30B29/02 , Y10T428/2982 , Y10T428/2991 , B22F2201/02 , B22F1/0022
摘要： A nanoparticle powder of silver has an average particle diameter measured by TEM observation (DTEM) of 30 nm or less, an aspect ratio of less than 1.5, an X-ray crystallite size (Dx) of 30 nm or less, a degree of single crystal grain {(DTEM)/(Dx)} of 5.0 or less, and a CV value {100×standard deviation (σ)/number average diameter (DTEM)} of less than 40%. The nanoparticle powder of silver has adhered to the particle surface thereof an organic protective agent having a molecular weight of 100 to 400. The nanoparticle powder is obtained by subjecting a silver salt to reduction treatment at a temperature of 85 to 150° C. in an alcohol having a boiling point of 85 to 150° C. and in the co-presence of an organic protective agent.
摘要翻译：银的纳米颗粒粉末通过TEM观察（DTEM）测量的平均粒径为30nm以下，纵横比小于1.5，X射线微晶尺寸（Dx）为30nm以下，单一度晶粒{（DTEM）/（Dx为5.0以下，CV值{100×标准偏差（σ）/数均直径（DTEM）}小于40％，银的纳米粒子粉末附着于其颗粒表面分子量为100〜400的有机保护剂。通过在85〜150℃的温度下对银盐进行还原处理，得到沸点为85〜150℃的醇。并且在有机保护剂的共存下。

75. 发明授权

US07344753B2 Nanostructures including a metal 有权
标题翻译：纳米结构包括金属
公开(公告)号：US07344753B2
公开(公告)日：2008-03-18
申请号：US10664431
申请日：2003-09-19
申请人： Hyungsoo Choi
发明人： Hyungsoo Choi
IPC分类号： C23C16/00
CPC分类号： C30B25/02 , B82Y30/00 , C30B29/02 , C30B29/605 , Y10T428/12993 , Y10T428/24917 , Y10T428/26
摘要： One embodiment includes noncatalytically forming a nanowire on a substrate from an organometallic vapor without application of any type of reduction agent. The nanowire is grown during this formation in a direction away from the substrate and is freestanding during growth. The nanowire has a first dimension of 500 nanometers or less and a second dimension extending from the substrate to a free end of the nanowire at least 10 times greater than the first dimension. In one form, the organometallic vapor includes copper and the nanowire essentially consists of elemental copper, a copper alloy, or oxide of copper. Alternatively or additionally, the nanowire is of a monocrystalline structure.
摘要翻译：一个实施方案包括在不使用任何类型的还原剂的情况下从有机金属蒸气在基材上非催化形成纳米线。纳米线在这种形成过程中沿远离基底的方向生长，并且在生长期间是独立的。纳米线具有500纳米或更小的第一尺寸和从基底延伸到纳米线的自由端的第二尺寸比第一尺寸大至少10倍。在一种形式中，有机金属蒸汽包括铜，并且纳米线基本上由元素铜，铜合金或铜的氧化物组成。或者或另外，纳米线是单晶结构的。

76. 发明申请

US20080038147A1 CRYSTALLINE METAL FILM 失效
标题翻译：水晶金属薄膜
公开(公告)号：US20080038147A1
公开(公告)日：2008-02-14
申请号：US11834983
申请日：2007-08-07
申请人： Akemi Ishizaki , Isao Kimura , Mitsuru Otsuka
发明人： Akemi Ishizaki , Isao Kimura , Mitsuru Otsuka
IPC分类号： B32B9/06 , C22C27/02 , C22C27/04 , C22C27/06
CPC分类号： C30B29/02 , C23C14/02 , C23C14/165 , C23C14/5873 , C30B23/02 , Y10T428/12 , Y10T428/24917
摘要： A metal film according to the present invention has a cubic crystal structure having a periodic pattern of crystal orientation in a plane. The crystal orientation is gradually rotated about a particular crystal-axis direction such that a {100} plane, a {110} plane, and a {111} plane appear.
摘要翻译：根据本发明的金属膜具有在平面中具有晶体取向的周期性图案的立方晶体结构。晶体取向围绕特定的晶轴方向逐渐旋转，从而出现{100}面，{110}面和{111}面。

77. 发明申请

US20080003165A1 Fullerene Hollow Structure Needle Crystal and C60-C70 Mixed Fine Wire, and Method for Preparation Thereof 失效
标题翻译：富勒烯中空结构针晶和C60-C70混合细线及其制备方法
公开(公告)号：US20080003165A1
公开(公告)日：2008-01-03
申请号：US10593870
申请日：2005-02-14
申请人： Kun'ichi Miyazawa , Masahisa Fujino , Masaru Tachibana , Ken-ichi Kobayashi , Tadatomo Suga
发明人： Kun'ichi Miyazawa , Masahisa Fujino , Masaru Tachibana , Ken-ichi Kobayashi , Tadatomo Suga
IPC分类号： C01B31/02
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/15 , C01B32/152 , C30B7/00 , C30B29/02 , C30B29/62
摘要： A needle crystal in the form of a capsule comprising fullerene molecules such as C60 and a C60 platinum derivative and having a hollow portion (a fullerene shell capsule) is provided. The fullerene shell capsule which has been prepared by the liquid-liquid interface precipitation method, which comprises (1) a step in which a solution containing a first solvent dissolving fullerene therein is combined with a second solvent in which the solubility of fullerene is lower than in the above first solvent; (2) a step in which a liquid-liquid interface is formed between the above solution and the above second solvent; and (3) a step in which a carbon fine wire is precipitated on the above liquid-liquid interface, has a novel characteristic in its form and can be used as a catalyst supporting material, a raw material for a plastic composite material, a storage material for gas such as hydrogen, a catalyst for fuel cell, or the like. Further, provided are novel C60-C70 mixed fine wire which is fullerene fine wire comprising two components of C60 and C70, and a method for preparing the mixed fine wire.
摘要翻译：提供了包含富勒烯分子例如C 60和C 60 Pt衍生物并具有中空部分（富勒烯壳胶囊）的胶囊形式的针状晶体。通过液 - 液界面沉淀法制备的富勒烯壳胶囊，其包括（1）将含有其中溶解富勒烯的第一溶剂的溶液与富勒烯的溶解度低于第二溶剂的第二溶剂组合的步骤在上述第一溶剂中; （2）在上述溶液和上述第二溶剂之间形成液 - 液界面的步骤; （3）在上述液 - 液界面上析出碳细线的步骤，具有新颖的形态特征，可用作催化剂载体材料，塑料复合材料用原料，储存气体如氢气，燃料电池用催化剂等。此外，提供了作为包含C 60和C 20的两个组分的富勒烯细线的新颖的C 60 -C 70混合细线， 70 <！ - SIPO - >和细混合线的制备方法。

78. 发明申请

US20070224107A1 Method of Manufacturing Carbon Nanostructure 有权
标题翻译：制造碳纳米结构的方法
公开(公告)号：US20070224107A1
公开(公告)日：2007-09-27
申请号：US11587212
申请日：2005-01-28
申请人： Takeshi Hikata
发明人： Takeshi Hikata
IPC分类号： C01B31/02 , B82B3/00
CPC分类号： C30B29/02 , B01J23/8906 , B01J23/8913 , B01J23/8993 , B01J35/06 , B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/02 , Y10S977/742
摘要： A method of manufacturing carbon nanostructures that allows carbon nanostructures having more uniform shape to be produced in high purity and in a stable manner is provided. The present invention relates to a method of manufacturing a carbon nanostructure for growing crystalline carbon by means of vapor deposition from a crystal growth surface of a catalytic base including a catalytic material, and in particular, to a method of manufacturing a carbon nanostructure where at least two gases including a feedstock gas are brought into contact with the catalytic base simultaneously. Preferably, the at least two gases are constituted by at least one feedstock gas and at least one carrier gas. Preferably, the carrier gas is brought into contact with the crystal growth surface, and the feedstock gas is brought into contact with at least a part of a region except for the crystal growth surface with which the carrier gas has been brought into contact. Preferably, the material gas contains an ion, and further preferably, it contains a carbon ion.
摘要翻译：提供一种制造碳纳米结构的方法，其允许以高纯度和稳定的方式制备具有更均匀形状的碳纳米结构。本发明涉及一种通过从包括催化材料的催化底物的晶体生长表面进行气相沉积来生长结晶碳的碳纳米结构体的制造方法，特别涉及一种制造碳纳米结构的方法，其中至少包括原料气体的两种气体同时与催化底物接触。优选地，至少两种气体由至少一种原料气体和至少一种载气构成。优选地，使载气与晶体生长表面接触，并且使原料气体与除载体气体已经接触的晶体生长表面以外的区域的至少一部分接触。优选地，原料气体含有离子，进一步优选含有碳离子。

79. 发明授权

US07226643B2 Thermal pyrolysising chemical vapor deposition method for synthesizing nano-carbon material 有权
标题翻译：用于合成纳米碳材料的热解热化学气相沉积法
公开(公告)号：US07226643B2
公开(公告)日：2007-06-05
申请号：US10341887
申请日：2003-01-13
申请人： Zhen-Yu Juang , Teng-Fang Kuo , Chuen-Horng Tsai , I-Nan Lin
发明人： Zhen-Yu Juang , Teng-Fang Kuo , Chuen-Horng Tsai , I-Nan Lin
IPC分类号： H05H1/24
CPC分类号： B82Y30/00 , B82Y40/00 , C01B32/162 , C30B25/02 , C30B25/18 , C30B29/02 , C30B29/605
摘要： A thermal cracking chemical vapor deposition method for synthesizing a nano-carbon material is provided. The method includes steps of (a) providing a substrate, (b) spreading a catalyst on the substrate, (c) putting the substrate into a reactor, (d) introducing a carbon containing material, and (e) heating the carbon containing material, thereby the carbon containing material being cracked to provide a carbon source for forming the nano-carbon material on the substrate.
摘要翻译：提供了一种用于合成纳米碳材料的热裂化学气相沉积方法。该方法包括以下步骤：（a）提供衬底，（b）在衬底上铺展催化剂，（c）将衬底放入反应器中，（d）引入含碳材料，和（e）加热含碳材料从而含碳材料被破裂以提供用于在基材上形成纳米碳材料的碳源。

80. 发明授权

US07211144B2 Pulsed nucleation deposition of tungsten layers 有权
标题翻译：钨层的脉冲成核沉积
公开(公告)号：US07211144B2
公开(公告)日：2007-05-01
申请号：US10194629
申请日：2002-07-12
申请人： Xinliang Lu , Ping Jian , Jong Hyun Yoo , Ken Kaung Lai , Alfred W. Mak , Robert L. Jackson , Ming Xi
发明人： Xinliang Lu , Ping Jian , Jong Hyun Yoo , Ken Kaung Lai , Alfred W. Mak , Robert L. Jackson , Ming Xi
IPC分类号： C30B25/16
CPC分类号： H01L21/28562 , C23C16/14 , C23C16/45523 , C23C16/45525 , C30B25/02 , C30B29/02
摘要： A method of forming a tungsten nucleation layer using a sequential deposition process. The tungsten nucleation layer is formed by reacting pulses of a tungsten-containing precursor and a reducing gas in a process chamber to deposit tungsten on the substrate. Thereafter, reaction by-products generated from the tungsten deposition are removed from the process chamber. After the reaction by-products are removed from the process chamber, a flow of the reducing gas is provided to the process chamber to react with residual tungsten-containing precursor remaining therein. Such a deposition process forms tungsten nucleation layers having good step coverage. The sequential deposition process of reacting pulses of the tungsten-containing precursor and the reducing gas, removing reaction by-products, and than providing a flow of the reducing gas to the process chamber may be repeated until a desired thickness for the tungsten nucleation layer is formed.
摘要翻译：使用顺序沉积工艺形成钨成核层的方法。钨成核层通过在处理室中使含钨前体和还原气体的脉冲反应而在基底上沉积钨而形成。此后，从处理室除去从钨沉积产生的反应副产物。在从处理室中除去反应副产物之后，将还原气体的流动提供给处理室以与其中剩余的含钨前体反应。这种沉积工艺形成具有良好阶梯覆盖的钨成核层。可以重复将含钨前体和还原气体的脉冲反应，除去反应副产物以及向处理室提供还原气体流的顺序沉积过程，直到钨成核层的期望厚度为形成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式