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71. 发明申请

US20080309192A1 ACOUSTIC WAVE RESONATOR 有权
标题翻译：声音波共振器
公开(公告)号：US20080309192A1
公开(公告)日：2008-12-18
申请号：US12203393
申请日：2008-09-03
申请人： Takeshi Nakao , Yasuharu Nakai , Michio Kadota
发明人： Takeshi Nakao , Yasuharu Nakai , Michio Kadota
IPC分类号： H03H9/25 , H03H9/15
CPC分类号： H03H9/02818 , H03H9/02992 , H03H9/1452
摘要： In an acoustic wave resonator, an IDT electrode is provided on a piezoelectric substrate. The IDT electrode is apodization-weighted such that a plurality of maximum values of cross widths are provided in acoustic wave propagation directions. Alternatively, in apodization weighting, weighting is applied such that at least one of a pair of envelopes located at outer side portions of the IDT electrode in directions substantially perpendicular to acoustic wave propagation directions includes a plurality of angled envelope portions angled from a central portion of the IDT electrode toward an outer side portion of the IDT electrode in a direction substantially perpendicular to the acoustic wave propagation directions.
摘要翻译：在声波谐振器中，在压电基板上设置有IDT电极。 IDT电极被变迹加权，使得在声波传播方向上提供多个最大交叉宽度值。或者，在变迹加权中，施加加权，使得位于IDT电极的外侧部分的大致垂直于声波传播方向的方向上的一对包络中的至少一个包括多个成角度的包络部分，该包络部分从 IDT电极朝向与声波传播方向大致正交的方向朝向IDT电极的外侧部分。

72. 发明授权

US07463117B2 Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR 失效
标题翻译：薄膜体声波谐振器（FBAR），FBAR实现的滤波器和FBAR制造方法
公开(公告)号：US07463117B2
公开(公告)日：2008-12-09
申请号：US11169645
申请日：2005-06-30
申请人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
发明人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
IPC分类号： H03H9/13 , H03H9/15 , H03H9/54
CPC分类号： H03H9/02094 , H03H3/04 , H03H9/02133 , H03H9/173 , H03H9/174 , H03H9/703 , H03H2003/021 , H03H2003/023
摘要： A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.
摘要翻译：薄膜体声波谐振器包括具有空腔的基板; 部分地固定在基板上的底部电极，底部电极的一部分机械地悬挂在空腔上方; 设置在底部电极上的压电层; 以及设置在压电体层上的顶电极，其具有沿着压电体层的厚度方向取向的晶轴，所述晶轴的取向分布的半峰全宽小于或等于约6度。

73. 发明申请

US20080284542A1 FILM BULK ACOUSTIC RESONATOR 审中-公开
标题翻译：电影大音量谐振器
公开(公告)号：US20080284542A1
公开(公告)日：2008-11-20
申请号：US11923117
申请日：2007-10-24
申请人： Kenya Sano , Masahiko Hasunuma , Hiroshi Toyoda
发明人： Kenya Sano , Masahiko Hasunuma , Hiroshi Toyoda
IPC分类号： H03H9/15
CPC分类号： H03H9/174 , H03H3/04 , H03H9/02149 , H03H9/13 , H03H9/173 , H03H2003/023
摘要： A film bulk acoustic resonator includes: a substrate; a lower electrode held on the substrate with at least a portion thereof being in a hollow state; a piezoelectric film provided on the lower electrode; and an upper electrode provided on the piezoelectric film. At least one of the lower electrode and the upper electrode is primarily composed of copper (Cu) and further contains a first element having a negatively larger free energy of oxide formation (ΔG) than copper. At least one of the lower electrode and the upper electrode is primarily composed of copper (Cu) and further contains a second element having smaller surface energy than copper.
摘要翻译：膜体声波谐振器包括：基板; 保持在所述基板上的下电极，其至少一部分处于中空状态; 设置在下电极上的压电膜; 以及设置在压电膜上的上电极。下电极和上电极中的至少一个主要由铜（Cu）组成，并且还包含具有比铜更大的氧化物形成自由能（ΔG）的较大的第一元素。下电极和上电极中的至少一个主要由铜（Cu）组成，并且还包含比铜更小的表面能的第二元件。

74. 发明申请

US20080258845A1 Resonator Operating with Bulk Acoustic Waves 有权
标题翻译：谐振器用声波散射波操作
公开(公告)号：US20080258845A1
公开(公告)日：2008-10-23
申请号：US11658117
申请日：2005-06-03
申请人： Edgar Schmidhammer
发明人： Edgar Schmidhammer
IPC分类号： H03H9/15 , H03H9/54
CPC分类号： H03H9/175 , H03H9/0207 , H03H9/584 , H03H9/589
摘要： Disclosed is a resonator that is mounted on a substrate, operates with acoustic bulk waves, and is disposed above an acoustic mirror. According to the invention, the basic mode of the acoustic bulk wave that can be generated in the resonator is suppressed while a higher mode can be excited in parallel and be utilized for the resonator by adjusting the acoustic mirror.
摘要翻译：公开了一种安装在基板上的谐振器，利用声学波浪进行操作，并且设置在声反射镜的上方。根据本发明，可以抑制在谐振器中可产生的声波体积波的基本模式，同时可以并联激发更高的模式，并通过调节声镜来用于谐振器。

75. 发明授权

US07423501B2 Film bulk acoustic wave resonator and manufacturing method thererof 有权
标题翻译：薄膜体声波谐振器及其制造方法
公开(公告)号：US07423501B2
公开(公告)日：2008-09-09
申请号：US11395298
申请日：2006-04-03
申请人： Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Sang-chul Sul , Byeoung-ju Ha , In-sang Song
发明人： Duck-hwan Kim , Chul-soo Kim , Yun-kwon Park , Sang-chul Sul , Byeoung-ju Ha , In-sang Song
IPC分类号： H03H9/15 , H03H9/17 , H03H9/54
CPC分类号： H03H9/172 , H03H3/02 , H03H9/02015 , H03H9/02118
摘要： A film bulk acoustic resonator includes a substrate; a lower electrode formed on top of the substrate; a piezoelectric membrane formed on top of the lower electrode and having a crystallographic axis so inclined as to generate a total reflection when an acoustic wave advances toward the lower electrode; and an upper electrode formed on top of the piezoelectric membrane.
摘要翻译：薄膜体声波谐振器包括基板; 形成在基板顶部的下电极; 形成在所述下电极的顶部并具有如此倾斜的结晶轴以在声波向下电极前进时产生全反射的压电膜; 以及形成在压电膜的顶部上的上电极。

76. 发明申请

US20070222336A1 Temperature compensation of film bulk acoustic resonator devices 有权
标题翻译：薄膜体声波谐振器器件的温度补偿
公开(公告)号：US20070222336A1
公开(公告)日：2007-09-27
申请号：US11386372
申请日：2006-03-22
申请人： Kevin Grannen , John Choy , Carrie Rogers
发明人： Kevin Grannen , John Choy , Carrie Rogers
IPC分类号： H03H9/15
CPC分类号： H03H9/02102 , H03H3/04 , H03H9/131 , H03H9/173 , H03H2003/021 , H03H2003/0407
摘要： A resonator. The resonator includes a bottom electrode overlaying at least part of a substrate, a composite structure overlaying at least part of the bottom electrode, and a top electrode overlaying at least part of the composite structure. The composite structure comprises a piezoelectric layer and a compensation layer, and the compensation layer includes silicon dioxide combined with boron.
摘要翻译：谐振器。谐振器包括覆盖基板的至少一部分的底部电极，覆盖至少部分底部电极的复合结构和覆盖复合结构的至少一部分的顶部电极。复合结构包括压电层和补偿层，补偿层包括与硼结合的二氧化硅。

77. 发明授权

US07161448B2 Acoustic resonator performance enhancements using recessed region 有权
标题翻译：使用凹陷区域的声谐振器性能增强
公开(公告)号：US07161448B2
公开(公告)日：2007-01-09
申请号：US10867540
申请日：2004-06-14
申请人： Hongiun Feng , Ronald S. Fazzio , Paul D. Bradley , Richard C. Ruby
发明人： Hongiun Feng , Ronald S. Fazzio , Paul D. Bradley , Richard C. Ruby
IPC分类号： H03H9/15 , H03H9/54
CPC分类号： H03H9/02118 , H03H9/02149 , H03H9/173
摘要： An acoustic resonator includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a recessed region. The substrate has a first surface. The first electrode is adjacent the first surface of the substrate. The layer of piezoelectric material is adjacent the first electrode. The second electrode is adjacent the layer of piezoelectric material. The second electrode has a second electrode perimeter that is shaped as a polygon. The recessed region is adjacent the second electrode. The recessed region has a shape defining a recessed region perimeter. The recessed region perimeter is recessed relative to the second electrode perimeter.
摘要翻译：声谐振器包括基板，第一电极，压电材料层，第二电极和凹陷区域。衬底具有第一表面。第一电极邻近衬底的第一表面。压电材料层与第一电极相邻。第二电极与压电材料层相邻。第二电极具有形状为多边形的第二电极周边。凹陷区域与第二电极相邻。凹陷区域具有限定凹陷区域周边的形状。凹陷区域周边相对于第二电极周边凹进。

78. 发明授权

US07057476B2 Noise suppression method for wave filter 有权
标题翻译：滤波器噪声抑制方法
公开(公告)号：US07057476B2
公开(公告)日：2006-06-06
申请号：US10853873
申请日：2004-05-25
申请人： Keh-Long Hwu
发明人： Keh-Long Hwu
IPC分类号： H03H9/15 , H03H9/54
CPC分类号： H03H9/02118 , H03H9/0211
摘要： A noise suppression method of a wave filter used to eliminate standing wave signal interferences in the acoustic wave filter consisted by a plurality of film bulk acoustic resonators (FBARs). The method is to provide a plurality of scatterers in the structured consisted by the FBARs, thereby creating an band-gap structure due to the material characteristics difference, which consequently generates a destructive interfering effect to the transverse higher harmonics vibration within a specific operating frequency range, and ultimately decreases or even eliminates any parasitic effects. Therefore, within the operation frequency range of this band-gap structure, abnormal signals created by any transverse wave modes cannot exist. In addition, an acoustic shield can be provided by phononic crystal structures between different FBARs, thus acoustic shielding any mutual interference within the operation frequency range.
摘要翻译：用于消除由多个膜体声波谐振器（FBAR）组成的声波滤波器中的驻波信号干扰的滤波器的噪声抑制方法。该方法是在由FBAR构成的结构中提供多个散射体，从而由于材料特性差异而产生带隙结构，因此，这在特定工作频率范围内对横向高次谐波振动产生破坏性的干扰效应，并最终减少甚至消除任何寄生效应。因此，在该带隙结构的工作频率范围内，不能存在由任何横波模式产生的异常信号。另外，可以通过不同FBAR之间的声子晶体结构提供声屏蔽，从而声音屏蔽操作频率范围内的任何相互干扰。

79. 发明申请

US20050231078A1 Piezoelectric resonator element, piezoelectric resonator, and piezoelectric oscillator 失效
标题翻译：压电谐振元件，压电谐振器和压电振荡器
公开(公告)号：US20050231078A1
公开(公告)日：2005-10-20
申请号：US11068988
申请日：2005-03-02
申请人： Masako Tanaka
发明人： Masako Tanaka
IPC分类号： H03B5/32 , H01L41/08 , H01L41/18 , H03H3/02 , H03H9/02 , H03H9/15 , H03H9/19
CPC分类号： H03H9/17 , H03H9/02086 , H03H9/0519 , H03H9/0547
摘要： Exemplary embodiments provide a piezoelectric resonator element, to reduce the reaching of an attenuating vibration of a main vibration to a marginal edge of the piezoelectric resonator element, as well as to stabilize an oscillating-frequency without worsening the CI value, nor inducing another vibration mode. The piezoelectric resonator element having a thickness shear vibration as a main vibration, a first groove and a second groove formed so as to surround the center part of a main surface, and the thickness at the first groove and the second groove structured to be between 70% to 96%, inclusive, of the thickness of the center part of the resonator element.
摘要翻译：示例性实施例提供压电谐振元件，以减少主振动衰减振动到达压电谐振元件的边缘的振动频率，以及稳定振荡频率而不使CI值恶化，也不引起另一振动模式。具有厚度剪切振动作为主振动的压电谐振元件，形成为围绕主表面的中心部分的第一凹槽和第二凹槽，以及第一凹槽和第二凹槽处的厚度为70 谐振器元件的中心部分的厚度的百分比至96％。

80. 发明授权

US06943647B2 Bulk acoustic wave filter with a roughened substrate bottom surface and method of fabricating same 有权
标题翻译：具有粗糙化基板底面的体声波滤波器及其制造方法
公开(公告)号：US06943647B2
公开(公告)日：2005-09-13
申请号：US10840320
申请日：2004-05-06
申请人： Robert Aigner , Pasi Tikka , Juha Sakari Ella
发明人： Robert Aigner , Pasi Tikka , Juha Sakari Ella
IPC分类号： H03H3/02 , H03H9/02 , H03H9/17 , H03H9/58 , H03H9/09 , H03H9/15 , H03H9/56
CPC分类号： H03H9/175 , H03H3/02 , H03H9/02055 , H03H9/0211 , H03H9/585 , H03H9/589 , Y10T29/42
摘要： A filter device comprises a substrate having a top surface and a bottom surface, and at least one acoustic wave situated on the top surface of the substrate, wherein the bottom surface of the substrate is roughened to reduce the reflection of an acoustic wave back to the acoustic wave filter. The effect achieved by the roughening of the bottom surface of the substrate that an acoustic wave which is generated by the acoustic wave filter and reaches the bottom surface of the substrate, is basically scattered so the acoustic wave that is actually reflected back to the acoustic wave device is reduced which, in turn, improves the performance characteristics of the acoustic wave filter.
摘要翻译：滤波器装置包括具有顶表面和底表面的衬底和位于衬底的顶表面上的至少一个声波，其中衬底的底表面被粗糙化以减小声波的反射回到声波滤波器通过基板的底面的粗糙化，由声波滤波器产生的声波到达基板的底面的声波基本上被散射，使得实际上被反射回声波的声波装置被减少，这进而改善了声波滤波器的性能特性。

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