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81. 发明授权

US07850058B2 Superplastic forming of titanium assemblies 有权
标题翻译：钛组件的超塑性成形
公开(公告)号：US07850058B2
公开(公告)日：2010-12-14
申请号：US11272244
申请日：2005-11-10
申请人： Thomas J. Connelly , Kent W. Dunstan , William T. Williams, III , Peter N. Comley , Larry D. Hefti
发明人： Thomas J. Connelly , Kent W. Dunstan , William T. Williams, III , Peter N. Comley , Larry D. Hefti
IPC分类号： B23K31/00
CPC分类号： B23K20/023 , B21D26/055 , B23K2101/045 , B23K2103/14 , B64D29/02 , B64D33/04
摘要： A method of superplastic forming of titanium packs and an associated assembly is provided. The titanium packs can include sheets having different granular structures so that the different sheets are adapted to superplastically form at different temperatures. One or more of the sheets can be formed at a temperature that is below the superplastic forming temperature of another sheet in the pack. In some cases, the occurrence of markoff can be reduced or eliminated.
摘要翻译：提供了钛包装和相关组件的超塑性成形方法。钛包装可以包括具有不同颗粒结构的片材，使得不同的片材适于在不同的温度下超塑性地形成。一个或多个片材可以在低于包装中另一片材的超塑性成形温度的温度下形成。在某些情况下，可以减少或消除markoff的发生。

82. 发明授权

US07833897B2 Process for making interconnect solder Pb-free bumps free from organo-tin/tin deposits on the wafer surface 有权
标题翻译：制造互连焊锡的工艺无晶圆表面上无有机锡/锡沉积物的无铅凸点
公开(公告)号：US07833897B2
公开(公告)日：2010-11-16
申请号：US11778678
申请日：2007-07-17
申请人： Sarah H. Knickerbocker , Sean A. Allen , John J. Garant , Jerry A. Gorrell , Phillip W Palmatier , Christopher L Tessler
发明人： Sarah H. Knickerbocker , Sean A. Allen , John J. Garant , Jerry A. Gorrell , Phillip W Palmatier , Christopher L Tessler
IPC分类号： H01L21/44 , H01L21/00 , B23K31/00 , B23K31/02
CPC分类号： B23K3/0623 , B23K2101/40
摘要： A method is provided for making of interconnect solder bumps on a wafer or other electronic device without depositing any significant amount of tin or other solder component from the solder onto the wafer surface which tin can cause shorts or other defects in the wafer. The method is particularly useful for well-known C4NP interconnect technology. In one aspect of the invention, a reducing gas flow rate is used to remove oxides from the solder surfaces and wafer pad surfaces and is of a sufficient determined or pre-determined flow and/or chamber or mold/wafer spacing to provide a gas velocity across the solder surfaces and wafer pad surfaces so that Sn or other contaminants do not deposit on the wafer surface during solder transfer. In another aspect, the transfer contact is performed below the melting point of the solder and subsequently heated to above the melting temperature while in transfer contact. The heated solder in contact with the wafer pads is transferred to the wafer pads.
摘要翻译：提供了一种用于在晶片或其他电子器件上制造互连焊料凸块的方法，而不会将任何显着量的锡或其他焊料组分从焊料沉积到晶片表面上，锡可能导致晶片中的短路或其它缺陷。该方法对于众所周知的C4NP互连技术特别有用。在本发明的一个方面，使用还原气体流速从焊料表面和晶片焊盘表面去除氧化物，并且具有足够的确定或预定的流动和/或室或模具/晶片间距以提供气体速度穿过焊料表面和晶片焊盘表面，使得Sn或其他污染物在焊料传输期间不会沉积在晶片表面上。在另一方面，转移接触在焊料的熔点之下进行，随后在转移接触的同时被加热至高于熔融温度。与晶片焊盘接触的加热焊料被转移到晶片焊盘。

83. 发明授权

US07789288B1 Brazing process and material for repairing a component 有权
标题翻译：钎焊工艺和修补零件的材料
公开(公告)号：US07789288B1
公开(公告)日：2010-09-07
申请号：US12533101
申请日：2009-07-31
申请人： Jere A. Johnson , Timothy Channel
发明人： Jere A. Johnson , Timothy Channel
IPC分类号： B23K31/00 , B23P6/04
CPC分类号： B23K1/0018 , B23K35/025 , B23K35/22 , B23K35/3033 , B23K35/34 , B23K35/362 , B23K2101/001 , C22C19/05 , F05B2230/80 , Y10T29/49318
摘要： A process and braze paste suitable for filling and closing voids in relatively thin wall sections of high temperature components, such as an impingement plate of a combustor of a gas turbine engine. The process entails applying at least a first braze paste to the crack to form a braze paste patch comprising powders of first and second alloys and an organic binder. The first alloy has a higher melting temperature than the second alloy, and the powders of the first and second alloys are present in the braze paste patch at a weight ratio of about 30:70 to about 70:30 weight percent. The braze paste patch is then heated to burn off the binder and melt at least the powder of the second alloy to form a brazement within the crack that contains particles of the first alloy dispersed in a matrix formed by the second alloy.
摘要翻译：一种适用于在诸如燃气涡轮发动机的燃烧器的冲击板的高温部件的较薄壁部分中填充和关闭空隙的工艺和钎焊膏。该方法需要将至少一个第一钎焊膏施加到裂纹上以形成包括第一和第二合金和有机粘合剂的粉末的钎焊膏贴片。第一合金的熔融温度高于第二合金，并且第一和第二合金的粉末以约30:70至约70:30重量％的重量比存在于钎焊膏贴片中。然后将钎焊膏贴片加热以烧掉粘合剂并至少熔化第二合金的粉末，以在裂纹内形成包含分散在由第二合金形成的基体中的第一合金颗粒的钎焊。

84. 发明授权

US07722729B2 Method for repairing high temperature articles 有权
标题翻译：修复高温物品的方法
公开(公告)号：US07722729B2
公开(公告)日：2010-05-25
申请号：US12260106
申请日：2008-10-29
申请人： Melvin Robert Jackson , Liang Jiang , Ji-Cheng Zhao , Canan Uslu Hardwicke
发明人： Melvin Robert Jackson , Liang Jiang , Ji-Cheng Zhao , Canan Uslu Hardwicke
IPC分类号： B32B15/01 , C22F1/14 , C22C5/04 , B23K31/00
CPC分类号： F01D5/005 , C22C5/04 , C22C30/00 , C22C32/0021 , Y02T50/672
摘要： A method for repairing an article comprises providing an article, providing a repair material, and joining said repair material to said article. The repair material comprises, in atom percent, at least about 50% rhodium; up to about 49% of a first material, said first material comprising at least one of palladium, platinum, iridium, and combinations thereof; from about 1% to about 15% of a second material, said second material comprising at least one of tungsten, rhenium, and combinations thereof; and up to about 10% of a third material, said third material comprising at least one of ruthenium, chromium, and combinations thereof. The repair material comprises an A1-structured phase at temperatures greater than about 1000° C., in an amount of at least about 90% by volume.
摘要翻译：一种用于修补物品的方法包括提供制品，提供修补材料，以及将所述修复材料连接到所述制品上。修复材料以原子百分数包含至少约50％的铑; 最多约49％的第一材料，所述第一材料包含钯，铂，铱及其组合中的至少一种; 约1％至约15％的第二材料，所述第二材料包含钨，铼及其组合中的至少一种; 和最多约10％的第三材料，所述第三材料包含钌，铬及其组合中的至少一种。修复材料包括在大于约1000℃的温度下的至少约90体积％的A1结构相。

85. 发明授权

US07694869B2 Universal mold for injection molding of solder 有权
标题翻译：通用模具用于注射成型焊料
公开(公告)号：US07694869B2
公开(公告)日：2010-04-13
申请号：US11409242
申请日：2006-04-21
申请人： Steven A. Cordes , Peter A. Gruber , John U. Knickerbocker , James L. Speidell
发明人： Steven A. Cordes , Peter A. Gruber , John U. Knickerbocker , James L. Speidell
IPC分类号： B23K31/00 , H05K3/34
CPC分类号： B23K3/0638 , B23K1/0016 , B23K3/0623 , B23K2101/40 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/11003 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01027 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H05K3/3478 , H05K3/3484 , H05K2201/09945 , H05K2203/0113 , H05K2203/043 , H01L2924/00
摘要： A system, method, and device for applying conductive bonding material to a substrate are disclosed. The method includes providing conductive bonding material in a plurality of cavities of a mold. A total number of cavities in the plurality of cavities being greater than a total number of at least one conductive pad of a circuit supporting substrate corresponding to the mold. The conductive bonding material in the mold is heated to a reflow temperature of the conductive bonding material. At least one wettable surface is placed in substantial contact with the heated conductive bonding material in at least one cavity. The mold and the corresponding circuit supporting substrate are brought in close proximity to each other such that the heated conductive bonding material in at least one cavity comes in contact with at least one conductive pad of the corresponding circuit supporting substrate.
摘要翻译：公开了一种用于将导电接合材料施加到基底的系统，方法和装置。该方法包括在模具的多个空腔中提供导电接合材料。多个空腔中的空腔的总数大于对应于模具的电路支撑衬底的至少一个导电焊盘的总数。将模具中的导电接合材料加热至导电接合材料的回流温度。在至少一个空腔中至少一个可润湿表面被放置成与被加热的导电接合材料基本接触。模具和相应的电路支撑衬底彼此靠近，使得至少一个空腔中的加热的导电接合材料与相应的电路支撑衬底的至少一个导电焊盘接触。

86. 发明授权

US07687922B2 Element mounting structure and element mounting method 失效
标题翻译：元件安装结构和元件安装方法
公开(公告)号：US07687922B2
公开(公告)日：2010-03-30
申请号：US11871063
申请日：2007-10-11
申请人： Tadayuki Chikuma
发明人： Tadayuki Chikuma
IPC分类号： H01L29/41 , H01L23/12 , H01L21/00 , B23K31/00
CPC分类号： H05K1/111 , H05K3/3489 , H05K2201/09381 , H05K2201/09418 , H05K2201/10121 , H05K2201/10674 , H05K2203/025 , Y02P70/611 , Y10T428/24826
摘要： An element is mounted on a carrier by removing an oxide film sufficiently. An element mounting method in which electrodes of the element are fusion bonded to electrodes of the carrier so that the element is mounted on the carrier, the method includes the steps of: positioning the electrodes of the element at electrodes of carrier respectively, one of the electrodes of the carrier being a striped electrode in an arc shape formed on a concentric circle centered on one of the electrodes of the element, and another being a center electrode formed near the center location of the concentric circle; and then rubbing the striped electrode of the carrier and an electrode of the element together in a direction of the concentric circle centered the center electrode so as to fusion bond the electrodes.
摘要翻译：通过充分去除氧化膜将元件安装在载体上。一种元件安装方法，其中元件的电极与载体的电极熔合，使得元件安装在载体上，该方法包括以下步骤：将元件的电极分别定位在载体的电极处，载体的电极是圆弧状的条状电极，形成在以元件的一个电极为中心的同心圆上，另一个是形成在同心圆的中心位置附近的中心电极; 然后沿着以中心电极为中心的同心圆的方向将载体的条状电极和元件的电极一起摩擦，从而将电极熔合。

87. 发明申请

US20100072262A1 Wire bonding method 审中-公开
标题翻译：接线方式
公开(公告)号：US20100072262A1
公开(公告)日：2010-03-25
申请号：US12284536
申请日：2008-09-23
申请人： Kenji Sugawara , Yong Chen
发明人： Kenji Sugawara , Yong Chen
IPC分类号： B23K31/00
CPC分类号： B23K20/004 , B23K20/26 , H01L24/78 , H01L2224/78 , H01L2224/78301 , H01L2224/859 , H01L2924/00014 , H01L2224/48 , H01L2224/45099 , H01L2224/05599 , H01L2924/00
摘要： A wire bonding method capable of further improving accuracy in wire bonding and realizing faster wire bonding including: transferring a semiconductor chip to a bonding center; capturing an image of a bonding point on the semiconductor chip; recognizing a position of the bonding point; performing wire bonding to the bonding point that has been corrected; capturing a post-bonding image of the semiconductor chip; transferring a next semiconductor chip to the bonding center; capturing an image of a bonding point on the next semiconductor chip; recognizing a position of the bonding point of the next semiconductor chip; and then recognizing an amount of displacement in the post-bonding image of the semiconductor chip during wire bonding to the bonding point that is of the next semiconductor chip and has been corrected.
摘要翻译：一种能够进一步提高引线接合的精度并实现更快的引线接合的引线接合方法，包括：将半导体芯片转移到接合中心; 捕捉半导体芯片上的接合点的图像; 识别接合点的位置; 对已校正的接合点进行引线接合; 捕获半导体芯片的后贴合图像; 将下一个半导体芯片传送到接合中心; 捕获下一个半导体芯片上的接合点的图像; 识别下一个半导体芯片的接合点的位置; 然后识别在引线接合期间半导体芯片的后贴合图像中的位移量与下一个半导体芯片的接合点并被校正。

88. 发明申请

US20100012629A1 Ion Plasma Electron Emitters for a Melting Furnace 失效
标题翻译：用于熔炉的离子等离子体电子发射器
公开(公告)号：US20100012629A1
公开(公告)日：2010-01-21
申请号：US12546785
申请日：2009-08-25
申请人： Robin M. Forbes Jones
发明人： Robin M. Forbes Jones
IPC分类号： B23K31/00
CPC分类号： C22B4/005 , B22D11/11 , C22B9/04 , C22B9/226 , C22B9/228 , F27B3/08 , F27B3/20 , F27B5/04 , F27D99/0006 , H01J37/077 , H01J37/305 , H01J2237/15 , H01J2237/3128
摘要： An apparatus for melting an electrically conductive metallic material comprises an auxiliary ion plasma electron emitter configured to produce a focused electron field including a cross-sectional profile having a first shape. The apparatus further comprises a steering system configured to direct the focused electron field to impinge the focused electron field on at least a portion of the electrically conductive metallic material to at least one of melt or heat any solidified portions of the electrically conductive metallic material, any solid condensate within the electrically conductive metallic material, and/or regions of a solidifying ingot.
摘要翻译：用于熔化导电金属材料的装置包括配置成产生聚焦电子场的辅助离子等离子体电子发射体，其包括具有第一形状的横截面轮廓。该装置还包括转向系统，其被配置为引导聚焦的电子场，将聚焦的电子场撞击在导电金属材料的至少一部分上，以将至少一个熔融或加热导电金属材料的任何固化部分，任何在导电金属材料内的固体冷凝物，和/或固化锭的区域。

89. 发明授权

US07637414B2 Methods and apparatus for wire bonding with wire length adjustment in an integrated circuit 有权
标题翻译：用于集成电路中线长度调整的引线接合方法和装置
公开(公告)号：US07637414B2
公开(公告)日：2009-12-29
申请号：US12171903
申请日：2008-07-11
申请人： Timothy Brooks Bambridge , John Wayne Bowen , John McKenna Brennan , Joseph Michael Freund
发明人： Timothy Brooks Bambridge , John Wayne Bowen , John McKenna Brennan , Joseph Michael Freund
IPC分类号： B23K31/00
CPC分类号： H01L24/49 , H01L23/66 , H01L24/48 , H01L2223/6644 , H01L2224/4809 , H01L2224/48091 , H01L2224/49111 , H01L2224/49175 , H01L2924/00014 , H01L2924/01033 , H01L2924/01082 , H01L2924/14 , H01L2924/19041 , H01L2924/19107 , H01L2924/3011 , Y10T29/49144 , Y10T29/49147 , Y10T29/49149 , Y10T29/49162 , Y10T29/49179 , Y10T29/49194 , H01L2224/45099 , H01L2224/05599
摘要： An integrated circuit is wire bonded in a manner such that there is consistent RF performance from integrated circuit package to integrated circuit package. Bond distances within the integrated circuit are measured, each corresponding to a wire bond to be formed. An area under a hypothetical wire bond profile is calculated as a function of the bond distances, a baseline wire length, and a baseline loop height. A wire is bonded across a given one of the bond distances to form a given one of the wire bonds. A wire bond profile for the given wire bond is provided having an area thereunder that is substantially equal to the calculated area.
摘要翻译：一种集成电路是以从集成电路封装到集成电路封装的射频性能一致的方式引线接合的。测量集成电路内的结合距离，每个对应于要形成的引线键合。根据键距，基线长度和基线回路高度，计算假想线接合曲线下的面积。导线沿着给定的一个焊接距离结合以形成给定的一个引线键合。提供给定引线键合的引线键合分布，其具有基本上等于所计算的面积的区域。

90. 发明授权

US07637411B2 Wire bonding apparatus and process 失效
标题翻译：引线接合装置和工艺
公开(公告)号：US07637411B2
公开(公告)日：2009-12-29
申请号：US12198422
申请日：2008-08-26
申请人： Richard D. Sadler
发明人： Richard D. Sadler
IPC分类号： B23K37/04 , B23K31/00
CPC分类号： B23K37/053 , B23K20/004 , H01L24/78 , H01L2224/78 , H01L2924/00014 , H01L2224/48 , H01L2224/45099
摘要： A wire bonding machine includes (1) a support structure for supporting a work piece and (2) a pre-heat structure for supporting the work piece during a pre-heat operation. The pre-heat structure is moveable with respect to the support structure.
摘要翻译：引线接合机包括（1）用于支撑工件的支撑结构和（2）用于在预热操作期间支撑工件的预热结构。预热结构相对于支撑结构是可移动的。

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