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1. 发明授权

US10156530B2 Group III nitride wafers and fabrication method and testing method 有权
公开(公告)号：US10156530B2
公开(公告)日：2018-12-18
申请号：US14806644
申请日：2015-07-22
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao Hashimoto
IPC分类号： G01N23/207 , C01B21/06 , H01L21/306 , H01L21/02 , H01L29/04 , C30B29/40 , C30B33/00 , C30B33/06 , B24B37/04 , H01L21/66 , H01L29/20 , H01L21/78 , C30B7/10
摘要： The invention provides, in one instance, a group III nitride wafer sliced from a group III nitride ingot, polished to remove the surface damage layer and tested with x-ray diffraction. The x-ray incident beam is irradiated at an angle less than 15 degree and diffraction peak intensity is evaluated. The group III nitride wafer passing this test has sufficient surface quality for device fabrication. The invention also provides, in one instance, a method of producing group III nitride wafer by slicing a group III nitride ingot, polishing at least one surface of the wafer, and testing the surface quality with x-ray diffraction having an incident beam angle less than 15 degree to the surface. The invention also provides, in an instance, a test method for testing the surface quality of group III nitride wafers using x-ray diffraction having an incident beam angle less than 15 degree to the surface.

2. 发明授权

US09673044B2 Group III nitride substrates and their fabrication method 有权
公开(公告)号：US09673044B2
公开(公告)日：2017-06-06
申请号：US14959565
申请日：2015-12-04
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao Hashimoto
IPC分类号： H01L21/00 , H01L21/02 , H01L21/78 , H01L21/324 , H01L21/304 , H01L29/04 , H01L29/20
CPC分类号： H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/02634 , H01L21/304 , H01L21/3245 , H01L21/78 , H01L29/045 , H01L29/2003
摘要： Group III nitride substrate having a first side of nonpolar or semipolar plane and a second side has more than one stripe of metal buried, wherein the stripes are perpendicular to group III nitride's c-axis. More than 90% of stacking faults exist over metal stripes. Second side may expose a nonpolar or semipolar plane. Also disclosed is a group III nitride substrate having a first side of nonpolar or semipolar plane and a second side with exposed nonpolar or semipolar plane. The substrate contains bundles of stacking faults with spacing larger than 1 mm. The invention also provides methods of fabricating the group III nitride substrates above.

3. 发明授权

US09543393B2 Group III nitride wafer and its production method 有权
标题翻译： III族氮化物晶圆及其制作方法
公开(公告)号：US09543393B2
公开(公告)日：2017-01-10
申请号：US13834871
申请日：2013-03-15
申请人： SixPoint Materials, Inc. , Seoul Semiconductor Co., Ltd.
发明人： Tadao Hashimoto , Edward Letts , Sierra Hoff
IPC分类号： H01L29/201 , H01L29/20 , C30B7/10 , C30B29/40 , C30B33/10 , H01L21/02 , C30B33/00
CPC分类号： H01L29/201 , C30B7/105 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/10 , H01L21/02013 , H01L21/02019 , H01L29/2003
摘要： The present invention discloses a group III nitride wafer such as GaN, AlN, InN and their alloys having one surface visually distinguishable from the other surface. After slicing of the wafer from a bulk crystal of group III nitride with a mechanical method such as multiple wire saw, the wafer is chemically etched so that one surface of the wafer is visually distinguishable from the other surface. The present invention also discloses a method of producing such wafers.
摘要翻译：本发明公开了一种III族氮化物晶片，例如GaN，AlN，InN及其合金，其一面在视觉上与其他表面不同。在用诸如多线锯的机械方法从III族氮化物的块状晶体切片晶片之后，晶片被化学蚀刻，使得晶片的一个表面在视觉上与另一表面区分开。本发明还公开了一种制造这种晶片的方法。

4. 发明授权

US09435051B2 Bismuth-doped semi-insulating group III nitride wafer and its production method 有权
标题翻译：铋掺杂半绝缘III族氮化物晶片及其制备方法
公开(公告)号：US09435051B2
公开(公告)日：2016-09-06
申请号：US14981292
申请日：2015-12-28
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao Hashimoto , Edward Letts , Sierra Hoff
IPC分类号： C30B7/10 , B24B37/04 , B28D5/00 , C30B29/40 , H01L21/02 , H01L29/20 , H01L29/207 , H01L29/22 , C30B9/00 , C30B28/04
CPC分类号： C30B7/105 , B24B37/042 , B28D5/00 , C30B9/00 , C30B28/04 , C30B29/403 , H01L21/02013 , H01L21/02389 , H01L29/2003 , H01L29/207 , H01L29/22
摘要： The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm−2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.
摘要翻译：本发明公开了掺杂有铋（Bi）的GaxAlyIn1-x-yN（0≤x≤1,0≤x+y≤1）的半绝缘晶片。半绝缘晶片的电阻率为104ohm-cm以上。尽管获得III族氮化物的单晶锭是非常困难的，但是该方法可以生长具有位错密度/晶界小于105cm -2的III族氮化物的高取向聚晶或单晶锭。本发明还公开了制造半绝缘III族氮化物块状晶体和晶片的方法。

5. 发明授权

US09349592B2 Method for making electronic device using group III nitride semiconductor having specified dislocation density oxygen/electron concentration, and active layer thickness 有权
标题翻译：使用具有指定位错密度氧/电子浓度的III族氮化物半导体制造电子器件的方法和有源层厚度
公开(公告)号：US09349592B2
公开(公告)日：2016-05-24
申请号：US14460121
申请日：2014-08-14
申请人： SixPoint Materials, Inc. , Seoul Semiconductor Co., Ltd.
发明人： Tadao Hashimoto
IPC分类号： H01L21/02 , H01L29/207 , H01L29/78 , H01L29/812 , C23C16/30 , H01L29/861 , H01L29/872 , H01L29/20 , H01L29/201 , H01L29/417 , H01L29/06 , H01L29/205
CPC分类号： H01L21/0254 , C23C16/303 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02584 , H01L21/0262 , H01L21/02623 , H01L21/02694 , H01L29/0646 , H01L29/0653 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/207 , H01L29/32 , H01L29/41766 , H01L29/66462 , H01L29/7784 , H01L29/7828 , H01L29/8122 , H01L29/8611 , H01L29/872
摘要： The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron concentration of ammonothermally grown substrates having the dislocation density less than 105 cm−2, combined with a high-purity active layer of Ga1-x-yAlxInyN (0≦x≦1, 0≦y≦1) grown by a vapor phase method, the device can attain high level of breakdown voltage as well as low on-resistance. To realize a good matching between the ammonothermally grown substrate and the high-purity active layer, a transition layer is optionally introduced. The active layer is thicker than a depletion region created by a device structure in the active layer.
摘要翻译：本发明公开了一种使用通过氨热法制造的III族氮化物衬底的电子器件。通过利用具有位错密度小于105cm -2的氨基生长衬底的高电子浓度，与Ga1-x-yAlxInyN（0＆amp; nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）的高纯度有源层结合生长通过气相法，器件可以获得高电平的击穿电压以及低导通电阻。为了实现氨热生长的基底和高纯度活性层之间的良好匹配，任选地引入过渡层。有源层比由有源层中的器件结构产生的耗尽区厚。

6. 发明申请

US20140054595A1 COMPOSITE SUBSTRATE OF GALLIUM NITRIDE AND METAL OXIDE 有权
标题翻译：氮化钛和金属氧化物的复合基材
公开(公告)号：US20140054595A1
公开(公告)日：2014-02-27
申请号：US13781509
申请日：2013-02-28
申请人： Seoul Semiconductor Co., Ltd. , SIXPOINT MATERIALS, INC.
发明人： Tadao HASHIMOTO
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/02389 , H01L21/02488 , H01L21/0254 , H01L21/02658 , H01L21/31111 , H01L22/12 , H01L29/32
摘要： The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) and the second layer composed of metal oxide wherein the second layer can be removed with in-situ etching at elevated temperature. The metal oxide layer is designed to act as a protective layer of the first layer until the fabrication of devices. The metal oxide layer is designed so that it can be removed in a fabrication reactor of the devices through gas-phase etching by reactive gas such as ammonia.
摘要翻译：本发明公开了一种解决与衬底表面质量相关的问题的新型复合衬底。复合衬底具有至少两层，包括由GaxAlyIn1-x-yN（0 @ x @ 1，x @ y + 1）组成的第一层和由金属氧化物组成的第二层，其中第二层可以用在高温下进行原位蚀刻。金属氧化物层被设计成用作第一层的保护层，直到器件的制造。金属氧化物层被设计成使得其可以通过气相蚀刻通过诸如氨的反应性气体在装置的制造反应器中除去。

7. 发明授权

US08585822B2 Method for testing group III-nitride wafers and group III-nitride wafers with test data 有权
公开(公告)号：US08585822B2
公开(公告)日：2013-11-19
申请号：US13728769
申请日：2012-12-27
申请人： SixPoint Materials, Inc.
发明人： Tadao Hashimoto , Masanori Ikari , Edward Letts
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： G01R31/2601 , C30B7/10 , C30B29/403 , H01L22/20 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control.

8. 发明申请

US20130135005A1 METHOD FOR TESTING GROUP III-NITRIDE WAFERS AND GROUP III-NITRIDE WAFERS WITH TEST DATA 有权
标题翻译：测试III-NITRIDE WAFERS和III-NITRIDE WAFERS测试数据的方法
公开(公告)号：US20130135005A1
公开(公告)日：2013-05-30
申请号：US13728769
申请日：2012-12-27
申请人： SixPoint Materials, Inc.
发明人： Tadao Hashimoto , Masanori Ikari , Edward Letts
IPC分类号： G01R31/26
CPC分类号： G01R31/2601 , C30B7/10 , C30B29/403 , H01L22/20 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control.
摘要翻译：本发明公开了III族氮化物晶片的新试验方法。通过利用氨热法，可以通过将本体GaN锭切片来获得GaN或其它III族氮化物晶片。由于这些晶片来自相同的晶锭，所以这些晶片具有相似的特性/质量。因此，可以从在切片之前从相同的锭或锭切片的所选数量的晶片获得的测量数据来估计从锭切片的晶片的性质。这些估计属性可用于未经测试的晶片的产品证书。该方案可以减少与质量控制相关的大量时间，劳动力和成本。

9. 发明申请

US20130119399A1 METHOD FOR TESTING GROUP III-NITRIDE WAFERS AND GROUP III-NITRIDE WAFERS WITH TEST DATA 有权
公开(公告)号：US20130119399A1
公开(公告)日：2013-05-16
申请号：US13728799
申请日：2012-12-27
申请人： SixPoint Materials, Inc.
发明人： Tadao Hashimoto , Masanori Ikari , Edward Letts
IPC分类号： H01L29/20
CPC分类号： G01R31/2601 , C30B7/10 , C30B29/403 , H01L22/20 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a new testing method of group III-nitride wafers. By utilizing the ammonothermal method, GaN or other Group III-nitride wafers can be obtained by slicing the bulk GaN ingots. Since these wafers originate from the same ingot, these wafers have similar properties/qualities. Therefore, properties of wafers sliced from an ingot can be estimated from measurement data obtained from selected number of wafers sliced from the same ingot or an ingot before slicing. These estimated properties can be used for product certificate of untested wafers. This scheme can reduce a significant amount of time, labor and cost related to quality control.

10. 发明申请

US20120304917A1 HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL 有权
标题翻译：用于生长III族氮化物晶体的高压容器和使用高压容器和III类硝酸盐晶体生长III族氮化物晶体的方法
公开(公告)号：US20120304917A1
公开(公告)日：2012-12-06
申请号：US13491392
申请日：2012-06-07
申请人： Tadao HASHIMOTO , Edward LETTS , Masanori IKARI
发明人： Tadao HASHIMOTO , Edward LETTS , Masanori IKARI
IPC分类号： C30B7/10
CPC分类号： C30B7/105 , B32B15/01 , C30B7/10 , C30B29/403 , C30B29/406 , C30B35/002 , Y10T428/12028
摘要： Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.
摘要翻译：本发明公开了一种大尺寸的大型高压容器。 Ni-Cr基沉淀硬化型超合金。船舶可能有多个区域。例如，高压容器可以分为具有流量限制装置的至少三个区域，并且结晶区域设定为比其他区域更高的温度。该结构有助于可靠地密封高压容器的两端，同时有助于大大减少容器底部的III族氮化物的不利沉淀。本发明还公开了提高纯度，透明度和结构质量的晶体的新方法。含碱金属的矿化剂以最低的氧气和湿度暴露于高压容器中充满氨。介绍了在工艺步骤中减少氧气污染的几种方法。公开了晶种的后蚀刻和新的温度梯度方案以改善结构质量。

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