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1. 发明授权

US11462380B2 Multi-beam inspection methods and systems 有权
公开(公告)号：US11462380B2
公开(公告)日：2022-10-04
申请号：US17266792
申请日：2019-07-03
申请人： ASML NETHERLANDS B. V.
发明人： Pieter Willem Herman De Jager
IPC分类号： H01J37/153 , H01J37/10 , H01J37/147 , H01J37/20 , H01J37/28
摘要： Systems, methods, and programming are described for inspecting a substrate having a pattern imaged thereon, including obtaining a plurality of selected target locations on the substrate, the selected target locations dependent on characteristics of the pattern, scanning the substrate with a plurality of electron beamlets, wherein the scanning includes individually addressing the beamlets to impinge on the selected target locations independently, detecting a reflected or a transmitted portion of the beamlets, and generating images of the selected target locations.

2. 发明授权

US11175592B2 Methods and apparatus for inspection of a structure and associated apparatuses 有权
公开(公告)号：US11175592B2
公开(公告)日：2021-11-16
申请号：US16656094
申请日：2019-10-17
申请人： ASML Netherlands B. V.
发明人： Elie Badr , Shawn Shakahwat Millat , Giacomo Miceli , Alok Verma
IPC分类号： G03F7/20
摘要： A method for determining an overlay metric is disclosed including obtaining angle resolved distribution spectrum data relating to a measurement of a target structure including a symmetrical component. An overlay dependent contour of a feature of the target structure is determined from the angle resolved distribution spectrum data, from which an overlay metric is determined. The method includes exposing an exposed feature onto a masked layer including a mask which defines masked and unmasked areas of the layer, such that a first portion of the exposed feature is exposed on a masked area of the layer and a second portion of the exposed feature is exposed on a non-masked area of the layer, the size of the first portion with respect to the second portion being overlay dependent; and performing an etch step to define an etched feature, the etched feature corresponding to the second portion of the exposed feature.

3. 发明授权

US11137690B2 Flows of optimization for patterning processes 有权
公开(公告)号：US11137690B2
公开(公告)日：2021-10-05
申请号：US16649699
申请日：2018-10-05
申请人： ASML NETHERLANDS B. V.
发明人： Duan-Fu Stephen Hsu
IPC分类号： G03B27/54 , G03F7/20 , G03F1/24
摘要： A method to improve a lithographic process for imaging a portion of a patterning device pattern onto a substrate using a lithographic projection having an illumination system and projection optics, the method including: (1) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an effect of an obscuration in the projection optics, and configuring, based on the model, the portion of the patterning device pattern, and/or (2) obtaining a simulation model that models projection of radiation by the projection optics, wherein the simulation model models an anamorphic demagnification of radiation by the projection optics, and configuring, based on the model, the portion of the patterning device pattern taking into account an anamorphic manufacturing rule or anamorphic manufacturing rule ratio.

4. 发明申请

US20200348125A1 METROLOGY METHOD, TARGET AND SUBSTRATE 审中-公开
公开(公告)号：US20200348125A1
公开(公告)日：2020-11-05
申请号：US16931832
申请日：2020-07-17
申请人： ASML NETHERLANDS B. V.
发明人： Kaustuve BHATTACHARYYA , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
IPC分类号： G01B11/14 , G03F7/20
摘要： A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.

5. 发明授权

US10712667B2 Optical device and associated system 有权
公开(公告)号：US10712667B2
公开(公告)日：2020-07-14
申请号：US16462742
申请日：2017-11-16
申请人： ASML Netherlands B. V.
发明人： Sumant Sukdew Ramanujan Oemrawsingh , Arno Jan Bleeker , Alexander Matthijs Struycken , Engelbertus Antonius Fransiscus Van Der Pasch , Bert Pieter Van Drieënhuizen
IPC分类号： G03F7/20 , G02B5/32 , G03F9/00 , G02B27/42
摘要： An alignment system aligns a laser beam to a desired position in a reference plane and to a desired direction in the reference plane. The system diffracts the laser light into different diffraction orders that are projected onto a detection plane using different lenses. As the locations of the projections of the different diffraction orders in the detection plane respond differently to changes in position and in direction of the beam in the reference plane, the locations of the projections enable to determine how to adjust the beam so as to get the beam properly aligned. The diffraction and the projection can be implemented by a hologram.

6. 发明申请

US20180113388A1 LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD 审中-公开
公开(公告)号：US20180113388A1
公开(公告)日：2018-04-26
申请号：US15838572
申请日：2017-12-12
申请人： ASML NETHERLANDS B. V.
发明人： Koen Jacobus Johannes Maria ZAAL , Joost Jeroen OTTENS
IPC分类号： G03F7/20
CPC分类号： G03F7/70716 , G03F7/70341 , G03F7/70725 , G03F7/70775 , G03F7/70783 , G03F7/7085 , G03F7/70858 , G03F7/70875
摘要： A lithographic apparatus with a cover plate formed separately from a substrate table and means for stabilizing a temperature of the substrate table by controlling the temperature of the cover plate is disclosed. A lithographic apparatus with thermal insulation provided between a cover plate and a substrate table so that the cover plate acts as a thermal shield for the substrate table is disclosed. A lithographic apparatus comprising means to determine a substrate table distortion and improve position control of a substrate by reference to the substrate table distortion is disclosed.

7. 发明申请

US20160231654A1 PROFILE AWARE SOURCE-MASK OPTIMIZATION 审中-公开
标题翻译：配置文件名称源码优化
公开(公告)号：US20160231654A1
公开(公告)日：2016-08-11
申请号：US15023330
申请日：2014-09-11
申请人： ASML NETHERLANDS B. V.
发明人： Duan-Fu Stephen HSU , Rafael C. HOWELL , Feng-Liang LIU
IPC分类号： G03F7/20
CPC分类号： G03F7/70483 , G03F7/70125 , G03F7/70433 , G03F7/705
摘要： A method to improve a lithographic process for imaging a portion of a design layout onto a substrate using a lithographic projection apparatus having an illuminator and projection optics, the method including: computing a multi-variable cost function of a plurality of design variables that are characteristics of the lithographic process, at least some of the design variables being characteristics of the illumination produced by the illuminator and of the design layout, wherein the multi-variable cost function is a function of a three-dimensional resist profile on the substrate, or a three-dimensional radiation field projected from the projection optics, or both; and reconfiguring one or more characteristics of the lithographic process by adjusting the design variables until a predefined termination condition is satisfied.
摘要翻译：一种改进用于使用具有照明器和投影光学器件的光刻投影装置将设计布局的一部分成像到衬底上的光刻工艺的方法，所述方法包括：计算作为特征的多个设计变量的多变量成本函数至少一些设计变量是由照明器产生的照明和设计布局的特征，其中多变量成本函数是衬底上的三维抗蚀剂轮廓的函数，或从投影光学器件投射的三维辐射场，或两者; 以及通过调整设计变量来重新配置光刻处理的一个或多个特性，直到满足预定的终止条件。

8. 发明申请

US20150346113A1 Substrate, a Method of Measuring a Property, an Inspection Apparatus and a Lithographic Apparatus 有权
标题翻译：基板，测量属性的方法，检查装置和平版印刷装置
公开(公告)号：US20150346113A1
公开(公告)日：2015-12-03
申请号：US14825765
申请日：2015-08-13
申请人： ASML Netherlands B. V.
发明人： Marcus Adrianus Van De Kerkhof , Maurits Van Der Schaar , Hendrik Jan Hidde Smilde
IPC分类号： G01N21/95 , G01N21/47 , G02B5/18 , G03F7/20
CPC分类号： G01N21/9501 , G01N21/4738 , G01N2201/06113 , G01N2201/10 , G02B5/1823 , G02B5/1861 , G03F7/70058 , G03F7/70633 , G03F7/70683 , G03F9/70 , G03F9/7046 , G03F9/7076 , H01L23/544 , H01L2924/0002 , Y10T428/24612 , H01L2924/00
摘要： A second set of superimposed gratings are superposed over a first set of superimposed gratings. The second set of gratings have a different periodicity from the first set of gratings or a different orientation. Consequently the first order diffraction pattern from the second set of superimposed gratings can be distinguished from the first order diffraction pattern from the first set of superimposed gratings.
摘要翻译：第二组叠加的光栅叠加在第一组叠加的光栅上。第二组光栅具有与第一组光栅不同的周期性或不同的取向。因此，来自第二组叠加光栅的一阶衍射图可以与来自第一组叠加光栅的一阶衍射图案区分开。

9. 发明申请

US20040130694A1 Lithographic projection apparatus and device manufacturing method 有权
标题翻译：平版印刷设备及其制造方法
公开(公告)号：US20040130694A1
公开(公告)日：2004-07-08
申请号：US10686813
申请日：2003-10-17
申请人： ASML Netherlands B. V.
发明人： Ralph Kurt , Levinus Pieter Bakker , Frank Jeroen Pieter Schuurmans
IPC分类号： G03B027/72 , G03B027/42
CPC分类号： G03F7/70983 , G03F7/702 , G03F7/70233
摘要： A lithographic projection apparatus is provided wherein an object situated in a pulsed beam of radiation has an electrode in its vicinity and a voltage source connected either to the electrode or to the object. This configuration can provide a negative voltage pulse to the object relative to the electrode. The beam of radiation and the voltage pulse from the voltage source are provided in phase or out of phase. In this way, the object is shielded against secondary electrons generated by radiation beam illumination.
摘要翻译：提供了一种光刻投影装置，其中位于脉冲辐射束中的物体在其附近具有电极，并且电压源连接到电极或物体。该配置可以相对于电极向对象提供负电压脉冲。辐射束和来自电压源的电压脉冲以相位或相位提供。以这种方式，物体被遮蔽以防止由辐射束照射产生的二次电子。

10. 发明申请

US20040105082A1 Radiation source, lithographic apparatus and device manufacturing method 有权
标题翻译：辐射源，光刻设备和器件制造方法
公开(公告)号：US20040105082A1
公开(公告)日：2004-06-03
申请号：US10664065
申请日：2003-09-17
申请人： ASML Netherlands B. V.
发明人： Konstantin Nikolaevitch Koshelev , Vadim Yevgenyevich Banine , Vladimir Vital?apos;Evitch Ivanov , Erik Rene Kieft , Erik Roelof Loopstra , Lucas Henricus Johannes Stevens , Yurii Victorovitch Sidelkov , Vsevolod Grigorevitch Koloshnikov , Vladimir Mihailovitch Krivtsun , Robert Rafilevitch Gayazov , Olav Waldemar Vladimir Frijns
IPC分类号： G03B027/42
CPC分类号： H05G2/003 , B82Y10/00 , F28D15/0266 , G03F7/70033 , G03F7/70166 , G03F7/70916 , H05G2/005
摘要： A radiation source comprises an anode and a cathode that are configured and arranged to create a discharge in a gas or vapor in a space between anode and cathode and to form a plasma pinch so as to generate electromagnetic radiation. The gas or vapor may comprise xenon, indium, lithium and/or tin. The radiation source may comprise a plurality of discharge elements, each of which is only used for short intervals, after which another discharge element is selected. The radiation source may also comprise a triggering device, which device can facilitate improving the exact timing of the pinch formation and thus the pulse of EUV radiation. The radiation source may also be constructed to have a low inductance, and operated in a self-triggering regime.
摘要翻译：辐射源包括阳极和阴极，其被构造和布置成在阳极和阴极之间的空间中的气体或蒸气中产生放电并且形成等离子体夹点以产生电磁辐射。气体或蒸汽可以包括氙，铟，锂和/或锡。辐射源可以包括多个放电元件，每个放电元件仅用于短间隔，之后选择另一个放电元件。辐射源还可以包括触发装置，该装置可以有助于改善夹紧形成的精确定时并因此改善EUV辐射的脉冲。辐射源也可以被构造为具有低电感，并以自触发方式操作。

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