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    • 3. 发明授权
    • Method of fabricating triode-structure field-emission device
    • 制造三极管结构场致发射器件的方法
    • US08288082B2
    • 2012-10-16
    • US12292027
    • 2008-11-10
    • Chan Wook BaikJunhee ChoiSeog Woo HongJoo Ho Lee
    • Chan Wook BaikJunhee ChoiSeog Woo HongJoo Ho Lee
    • G03F7/11
    • H01J31/127H01J29/04H01J2329/0455
    • Example embodiments provide a method of fabricating a triode-structure field-emission device. A cathode, an insulating layer, and a gate metal layer may be sequentially formed on a substrate. A first resist pattern having a first opening and a second resist pattern having a second opening smaller than the first opening may be formed to be sequentially laminated on the gate metal layer. Then, the gate metal layer and the insulating layer may be etched using the first resist pattern to form a gate electrode and an insulating layer having a first hole and a second hole corresponding to the first opening. A catalyst layer may be formed on the cathode exposed through the first and second holes using the second resist pattern. After the first resist pattern, second resist pattern, and the catalyst layer on the second resist pattern are removed, an emitter may be formed on the catalyst layer in the second hole.
    • 示例性实施例提供了制造三极管结构场致发射器件的方法。 可以在基板上依次形成阴极,绝缘层和栅极金属层。 可以形成具有第一开口的第一抗蚀剂图案和具有小于第一开口的第二开口的第二抗蚀剂图案,以依次层压在栅极金属层上。 然后,可以使用第一抗蚀剂图案蚀刻栅极金属层和绝缘层,以形成具有与第一开口对应的第一孔和第二孔的栅电极和绝缘层。 可以使用第二抗蚀剂图案在通过第一孔和第二孔暴露的阴极上形成催化剂层。 在第一抗蚀剂图案,第二抗蚀剂图案和第二抗蚀剂图案上的催化剂层被去除之后,可以在第二孔中的催化剂层上形成发射极。
    • 4. 发明授权
    • Terahertz oscillators and methods of manufacturing electron emitters
    • 太赫兹振荡器和制造电子发射器的方法
    • US08212623B2
    • 2012-07-03
    • US12801711
    • 2010-06-22
    • Chan-wook BaikJoo-ho Lee
    • Chan-wook BaikJoo-ho Lee
    • H03B17/00
    • H03B17/00
    • A terahertz oscillator may include a first insulating layer, an electron emitter on the first insulating layer, adapted to emit an electron beam, and including a cathode, an anode, an oscillating circuit, and a collector sequentially disposed, spaced apart from each other, on the first insulating layer in a direction in which the electron beam is emitted from the electron emitter, wherein the oscillating circuit converts energy of the electron beam to energy of an electromagnetic wave, and wherein the collector collects the electron beam, an output unit adapted to emit the electromagnetic wave from the oscillating circuit to outside of the terahertz oscillator, and an electron emitting material layer. The cathode may include a first curved portion that extends in a direction perpendicular to the first insulating layer. The electron emitting material layer may be on an inner surface of the first curved portion of the cathode.
    • 太赫兹振荡器可以包括第一绝缘层,第一绝缘层上的电子发射器,适于发射电子束,并且包括彼此间隔开的顺序设置的阴极,阳极,振荡电路和集电极, 在电子束从电子发射器发射的方向上的第一绝缘层上,其中振荡电路将电子束的能量转换为电磁波的能量,并且其中集电极收集电子束,输出单元适应 以将电磁波从振荡电路发射到太赫兹振荡器外部,以及电子发射材料层。 阴极可以包括沿垂直于第一绝缘层的方向延伸的第一弯曲部分。 电子发射材料层可以在阴极的第一弯曲部分的内表面上。
    • 10. 发明申请
    • Method of fabricating Triode-Structure field-emission device
    • 三极管结构场致发射器件的制造方法
    • US20090233240A1
    • 2009-09-17
    • US12292027
    • 2008-11-10
    • Chan Wook BaikJunhee ChoiSeog Woo HongJoo Ho Lee
    • Chan Wook BaikJunhee ChoiSeog Woo HongJoo Ho Lee
    • G03F7/20
    • H01J31/127H01J29/04H01J2329/0455
    • Example embodiments provide a method of fabricating a triode-structure field-emission device. A cathode, an insulating layer, and a gate metal layer may be sequentially formed on a substrate. A first resist pattern having a first opening and a second resist pattern having a second opening smaller than the first opening may be formed to be sequentially laminated on the gate metal layer. Then, the gate metal layer and the insulating layer may be etched using the first resist pattern to form a gate electrode and an insulating layer having a first hole and a second hole corresponding to the first opening. A catalyst layer may be formed on the cathode exposed through the first and second holes using the second resist pattern. After the first resist pattern, second resist pattern, and the catalyst layer on the second resist pattern are removed, an emitter may be formed on the catalyst layer in the second hole.
    • 示例性实施例提供了制造三极管结构场致发射器件的方法。 可以在基板上依次形成阴极,绝缘层和栅极金属层。 可以形成具有第一开口的第一抗蚀剂图案和具有小于第一开口的第二开口的第二抗蚀剂图案,以依次层压在栅极金属层上。 然后,可以使用第一抗蚀剂图案蚀刻栅极金属层和绝缘层,以形成具有与第一开口对应的第一孔和第二孔的栅电极和绝缘层。 可以使用第二抗蚀剂图案在通过第一孔和第二孔暴露的阴极上形成催化剂层。 在第一抗蚀剂图案,第二抗蚀剂图案和第二抗蚀剂图案上的催化剂层被去除之后,可以在第二孔中的催化剂层上形成发射极。