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1. 发明申请

US20120047471A1 DYNAMIC PROVISIONAL DECOMPOSITION OF LITHOGRAPHIC PATTERNS HAVING DIFFERENT INTERACTION RANGES 有权
标题翻译：具有不同相互作用范围的平面图的动态临时分解
公开(公告)号：US20120047471A1
公开(公告)日：2012-02-23
申请号：US13204440
申请日：2011-08-05
申请人： Saeed Bagheri , Francisco Barahona , Laszlo Ladanyi , Jonathan Lee , David O. Melville , Alan E. Rosenbluth , Daniele P. Scarpazza , Marc A. Szeto-Millstone , Kehan Tian , Andreas Waechter
发明人： Saeed Bagheri , Francisco Barahona , Laszlo Ladanyi , Jonathan Lee , David O. Melville , Alan E. Rosenbluth , Daniele P. Scarpazza , Marc A. Szeto-Millstone , Kehan Tian , Andreas Waechter
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/68
摘要： A method for obtaining mask and source patterns for printing integrated circuit patterns includes providing initial representations of a plurality of mask and source patterns. The method identifies long-range and short-range factors in the representations of the plurality of mask and source patterns, and provides a plurality of clips including a specified number of mask patterns. Short-range factors having overlapping ranges for each of the clips are specified. The method includes determining an initial processing priority for the plurality of clips, and determining a patterning relationship between integrated circuit patterns and the mask and source patterns. A primary objective is determined which expresses the printability of the integrated circuit patterns in terms of the patterning relationship. The method defines and iteratively solves a master problem employing the primary objective to generate values for the long-range factors, and solves subproblems employing a second objective for generating values for the short-range factors.
摘要翻译：用于获得用于打印集成电路图案的掩模和源图案的方法包括提供多个掩模和源图案的初始表示。该方法识别多个掩模和源图案的表示中的长距离和短距离因子，并且提供包括指定数量的掩模图案的多个剪辑。指定具有每个剪辑的重叠范围的短距离因子。该方法包括确定多个剪辑的初始处理优先级，以及确定集成电路图案与掩模和源图案之间的图案化关系。根据图案化关系确定表示集成电路图案的可印刷性的主要目的。该方法定义并迭代地解决了使用主要目标生成长距离因子值的主问题，并且解决了使用第二个目标生成短距离因子值的子问题。

2. 发明授权

US08056026B2 Determining manufacturability of lithographic mask by selecting target edge pairs used in determining a manufacturing penalty of the lithographic mask 有权
标题翻译：通过选择用于确定光刻掩模的制造损失的目标边缘对来确定光刻掩模的可制造性
公开(公告)号：US08056026B2
公开(公告)日：2011-11-08
申请号：US12334485
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/68 , G03F1/78
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edges are selected from mask layout data of the lithographic mask. The mask layout data includes polygons distributed over cells, where each polygon has edges. The cells include a center cell, two vertical cells above and below the center cell, and two horizontal cells to the left and right of the center cell. Target edge pairs are selected for determining a manufacturing penalty in making the lithographic mask, in a manner that decreases the computational volume in determining the manufacturing penalty. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs selected. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘。掩模布局数据包括分布在单元格上的多边形，其中每个多边形具有边。小区包括中心小区，中心小区上方和下方的两个垂直小区以及中心小区左侧和右侧的两个水平小区。选择目标边对以确定在制作光刻掩模时的制造损失，以减小计算体积来确定制造损失。基于所选择的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模的制造损失。

3. 发明授权

US08056023B2 Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask 有权
标题翻译：通过减少用于确定光刻掩模的制造损失的目标边缘对来确定光刻掩模的可制造性
公开(公告)号：US08056023B2
公开(公告)日：2011-11-08
申请号：US12334482
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masahura Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。掩模布局数据包括多边形，其中每个多边形具有边缘，并且其中每个目标边对对由一个或多个多边形的两个边缘限定。在确定制作光刻掩模时的制造损失时，减少目标边缘对的数量以减少计算量。基于减少数量的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模的制造损失。

4. 发明申请

US20110231803A1 Wavefront engineering of mask data for semiconductor device design 有权
标题翻译：用于半导体器件设计的掩模数据的波前工程
公开(公告)号：US20110231803A1
公开(公告)日：2011-09-22
申请号：US12725287
申请日：2010-03-16
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Alan E. Rosenbluth , Kehan Tian , Masaharu Sakamoto , Saeed Bagheri
IPC分类号： G06F17/50
CPC分类号： G03F7/70433 , G03F1/36 , G03F1/70 , G03F7/705
摘要： Optical wave data for a semiconductor device design is divided into regions. First wavefront engineering is performed on the wave data of each region, accounting for just the wave data of each region and not accounting for the wave data of neighboring regions of each region. The optical wave data of each region is normalized based on results of the first wavefront engineering. Second wavefront engineering is performed on the wave data of each region, based at least on the wave data of each region as has been normalized. The second wavefront engineering takes into account the wave data of each region and a guard band around each region that includes the wave data of the neighboring regions of each region. The second wavefront engineering can be sequentially performed by organizing the regions into groups, and sequentially performing the second wavefront engineering on the regions of each group in parallel.
摘要翻译：半导体器件设计的光波数据分为几个区域。对每个区域的波形数据执行第一波前工程，仅考虑每个区域的波形数据，不考虑每个区域的相邻区域的波形数据。基于第一波前工程的结果对每个区域的光波数据进行归一化。至少基于已经归一化的每个区域的波形数据，对每个区域的波形数据执行第二波前工程。第二波前工程考虑了每个区域的波形数据和围绕每个区域的保护带，其包括每个区域的相邻区域的波形数据。可以通过将区域组合成组并且顺序地在并行地对每个组的区域执行第二波前工程来顺序执行第二波前工程。

5. 发明申请

US20100153903A1 DETERMINING MANUFACTURABILITY OF LITHOGRAPHIC MASK USING CONTINUOUS DERIVATIVES CHARACTERIZING THE MANUFACTURABILITY ON A CONTINUOUS SCALE 有权
标题翻译：使用连续衍生物确定表面掩模的可制造性，表征连续性尺度上的可制造性
公开(公告)号：US20100153903A1
公开(公告)日：2010-06-17
申请号：US12334488
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50
CPC分类号： G03F1/76 , G03F1/36
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask, for determining a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has a number of edges. Each target edge pair is defined by two of the edges of one or more of the polygons. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined. Determining the manufacturing penalty is based on the target edge pairs as selected. Determining the manufacturability of the lithographic mask uses continuous derivatives characterizing the manufacturability of the lithographic mask on a continuous scale. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。掩模布局数据包括多边形，其中每个多边形具有多个边。每个目标边对由一个或多个多边形的两个边缘定义。确定了光刻掩模的可制造性，包括制造光刻掩模的制造损失。确定制造损失是基于所选择的目标边缘对。确定平版印刷掩模的可制造性使用连续的衍生物来表征平版印刷掩模的可制造性在连续尺度上。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模的制造损失。

6. 发明申请

US20100153901A1 Determining manufacturability of lithographic mask by reducing target edge pairs used in determining a manufacturing penalty of the lithographic mask 有权
标题翻译：通过减少用于确定光刻掩模的制造损失的目标边缘对来确定光刻掩模的可制造性
公开(公告)号：US20100153901A1
公开(公告)日：2010-06-17
申请号：US12334482
申请日：2008-12-14
申请人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
发明人： Tadanobu Inoue , David O. Melville , Hidemasa Muta , Kehan Tian , Masaharu Sakamoto , Alan E. Rosenbluth
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the lithographic mask to determine a manufacturing penalty in making the lithographic mask. The mask layout data includes polygons, where each polygon has edges, and where each target edge pair is defined by two of the edges of one or more of the polygons. The number of the target edge pairs is reduced to decrease computational volume in determining the manufacturing penalty in making the lithographic mask. The manufacturability of the lithographic mask, including the manufacturing penalty in making the lithographic mask, is determined based on the target edge pairs as reduced in number. The manufacturability of the lithographic mask is output. The manufacturability of the lithographic mask is dependent on the manufacturing penalty in making the lithographic mask.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从光刻掩模的掩模布局数据中选择目标边缘对，以确定在制作光刻掩模时的制造损失。掩模布局数据包括多边形，其中每个多边形具有边缘，并且其中每个目标边对对由一个或多个多边形的两个边缘限定。在确定制作光刻掩模时的制造损失时，减少目标边缘对的数量以减小计算量。基于减少数量的目标边缘对来确定光刻掩模的可制造性，包括制造光刻掩模的制造损失。输出光刻掩模的可制造性。光刻掩模的可制造性取决于制造光刻掩模的制造损失。

7. 发明授权

US08537444B2 System and method for projection lithography with immersed image-aligned diffractive element 失效
$System and method for projection lithography with immersed image-aligned diffractive element$
标题翻译：具有浸入图像对准衍射元件的投影光刻系统和方法
公开(公告)号：US08537444B2
公开(公告)日：2013-09-17
申请号：US13618821
申请日：2012-09-14
申请人： Dario Gil , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
发明人： Dario Gil , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
IPC分类号： G03H1/08
CPC分类号： G03H1/02 , G03F7/70466 , G03H1/0244 , G03H1/0402 , G03H1/08 , G03H2001/0094 , G03H2001/2615 , G03H2222/47 , G03H2240/56
摘要： A system and method and computer program product for exposing a photoresist film with patterns of finer resolution than can physically be projected onto the film in an ordinary image formed at the same wavelength. A hologram structure containing a set of resolvable spatial frequencies is first formed above the photoresist film. An illuminating wavefront containing a second set of resolvable spatial frequencies is projected through the hologram, forming a new set of transmitted spatial frequencies that expose the photoresist. The transmitted spatial frequencies include sum frequencies of higher frequency than is present in the hologram or illuminating wavefront, increasing the resolution of the exposing pattern. Designing lithographic masks further includes fabricating the hologram and projecting the illuminating wavefront. A simple personalization based on Talbot fringes and plasmonic interference is further performed.
摘要翻译：一种系统和方法以及计算机程序产品，用于以比在相同波长下形成的普通图像物理地投射到薄膜上更精细的分辨率的图案来曝光光致抗蚀剂膜。首先在光致抗蚀剂膜上方形成包含一组可分辨空间频率的全息图结构。包含第二组可分辨空间频率的照明波前通过全息图投射，形成一组新的曝光光致抗蚀剂的透射空间频率。所发送的空间频率包括比存在于全息图或照明波前的频率更高的和频，增加曝光图案的分辨率。设计光刻掩模还包括制造全息图并投射照明波前。进一步执行基于Talbot条纹和等离子体激元干扰的简单个性化。

8. 发明申请

US20120196210A1 Determining manufacturability of lithographic mask based on manufacturing shape penalty of aspect ratio of edge that takes into account pair of connected edges of the edge 失效
标题翻译：基于边缘长宽比的制造形状损失考虑到边缘的连接边缘对，确定平版印刷掩模的可制造性
公开(公告)号：US20120196210A1
公开(公告)日：2012-08-02
申请号：US13017593
申请日：2011-01-31
申请人： Tadanobu Inoue , Alan E. Rosenbluth , Kehan Tian , David O. Melville , Masaharu Sakamoto
发明人： Tadanobu Inoue , Alan E. Rosenbluth , Kehan Tian , David O. Melville , Masaharu Sakamoto
IPC分类号： G03F1/00 , G06F17/50
CPC分类号： G06F17/5081 , G03F1/0069 , G03F1/30 , G03F1/36 , G03F1/38 , G03F1/70 , G06F19/00 , G21K5/00
摘要： The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the mask, for determining a manufacturing penalty in making the mask. The manufacturability of the mask, including the manufacturing penalty in making the mask, is determined based on the target edge pairs as selected, and is dependent on the manufacturing penalty in making the mask. Determining the manufacturability of the mask includes, for a selected edge pair having first and second edges that are at least substantially parallel to one another, determining a manufacturing shape penalty owing to an aspect ratio of the first edge relative to a size of a gap between the first edge and the second edge. This penalty takes into account a pair of connected edges of the first edge that are at least substantially parallel to the first edge.
摘要翻译：确定用于制造半导体器件的实例的光刻掩模的可制造性。从掩模的掩模布局数据中选择目标边对，用于确定制作掩模时的制造损失。基于所选择的目标边缘对来确定掩模的可制造性，包括制造掩模时的制造损失，并且取决于制造掩模时的制造损失。确定掩模的可制造性包括：对于具有至少基本上彼此平行的第一和第二边缘的所选边缘对，由于第一边缘的纵横比相对于第一边缘的宽度比，第一边缘和第二边缘。这种惩罚考虑到第一边缘的至少基本平行于第一边缘的一对连接的边缘。

9. 发明申请

US20120077130A1 METHOD FOR GENERATING A PLURALITY OF OPTIMIZED WAVEFRONTS FOR A MULTIPLE EXPOSURE LITHOGRAPHIC PROCESS 失效
标题翻译：一种用于多次曝光的光刻过程产生多重优化波形的方法
公开(公告)号：US20120077130A1
公开(公告)日：2012-03-29
申请号：US12890854
申请日：2010-09-27
申请人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
发明人： Saeed Bagheri , Kafai Lai , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
IPC分类号： G03F7/20 , G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A simplified version of a multiexpose mask optimization problem is solved in order to find a compressed space in which to search for the solution to the full problem formulation. The simplification is to reduce the full problem to an unconstrained formulation. The full problem of minimizing dark region intensity while maintaining intensity above threshold at each bright point can be converted to the unconstrained problem of minimizing average dark region intensity per unit of average intensity in the bright regions. The extrema solutions to the simplified problem can be obtained for each source. This set of extrema solutions is then assessed to determine which features are predominantly printed by which source. A minimal set of extrema solutions serves as a space of reduced dimensionality within which to maximize the primary objective under constraints. The space typically has reduced dimensionality through selection of highest quality extrema solutions.
摘要翻译：解决了一个简化版本的多功能面罩优化问题，以便找到一个压缩空间，在该空间中搜索解决问题的全部问题。简化是将完整的问题减少到无约束的公式。将每个亮点处的强度保持在阈值以上的暗区强度最小化的问题可以转化为明亮区域每单位平均强度平均暗区强度最小化的无约束问题。可以为每个源获得简化问题的极值解。然后评估这组极值解决方案，以确定哪些特征主要由哪个来源打印。最小的一组极值解决方案作为减小维数的空间，在这个空间内可以在约束条件下最大化主要目标。该空间通常通过选择最高质量的极值解决方案降低维度。

10. 发明申请

US20100003605A1 SYSTEM AND METHOD FOR PROJECTION LITHOGRAPHY WITH IMMERSED IMAGE-ALIGNED DIFFRACTIVE ELEMENT 审中-公开
标题翻译：投影图像的系统和方法与映射图像对齐的差分元素
公开(公告)号：US20100003605A1
公开(公告)日：2010-01-07
申请号：US12168310
申请日：2008-07-07
申请人： Dario Gil , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
发明人： Dario Gil , David O. Melville , Alan E. Rosenbluth , Kehan Tian , Jaione Tirapu Azpiroz
IPC分类号： G03H1/04 , G06F17/50
CPC分类号： G03H1/02 , G03F7/70466 , G03H1/0244 , G03H1/0402 , G03H1/08 , G03H2001/0094 , G03H2001/2615 , G03H2222/47 , G03H2240/56
摘要： A novel system and method and computer program product for exposing a photoresist film with patterns of finer resolution than can physically be projected onto the film in an ordinary image formed at the same wavelength. A hologram structure containing a set of resolvable spatial frequencies is first formed above the photoresist film. If necessary the photoresist is then sensitized. An illuminating wavefront containing a second set of resolvable spatial frequencies is projected through the hologram, forming a new set of transmitted spatial frequencies that expose the photoresist. The transmitted spatial frequencies include sum frequencies of higher frequency than is present in the hologram or illuminating wavefront, increasing the resolution of the exposing pattern. These high spatial frequency transmitted waves can be evanescent, or they can propagate at a steeper obliquity in a higher index medium than is possible in a projected image. A further method is described for designing lithographic masks to fabricate the hologram and to project the illuminating wavefront. In other embodiments, a simple personalization based on Talbot fringes and plasmonic interference is performed.
摘要翻译：一种新颖的系统和方法以及计算机程序产品，用于将光致抗蚀剂膜以比分辨率更高的图案曝光在物理上可投影到以相同波长形成的普通图像中的胶片上。首先在光致抗蚀剂膜上方形成包含一组可分辨空间频率的全息图结构。如果需要，光致抗蚀剂然后被致敏。包含第二组可分辨空间频率的照明波前通过全息图投射，形成一组新的曝光光致抗蚀剂的透射空间频率。所发送的空间频率包括比存在于全息图或照明波前的频率更高的和频，增加曝光图案的分辨率。这些高空间频率的透射波可以是消逝的，或者它们可以在比投影图像中可能的更高的索引介质中更陡的倾斜度下传播。描述了用于设计光刻掩模以制造全息图并投影照明波前的另一种方法。在其他实施例中，执行基于Talbot条纹和等离子体激元干扰的简单个性化。

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