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    • 9. 发明授权
    • Alignment method of exposure mask and manufacturing method of thin film element substrate
    • 曝光掩模的对准方法和薄膜元件基板的制造方法
    • US07255968B2
    • 2007-08-14
    • US11223956
    • 2005-09-13
    • Chiharu Iriguchi
    • Chiharu Iriguchi
    • G03F9/00
    • G03F9/7084G03H1/0408G03H2001/0094
    • A method for aligning an exposure mask comprises: using a plurality of hologram masks, on which an alignment mark is formed; aligning position of the hologram masks toward an object to be exposed and on which an alignment mark is also formed, with a plurality of times by using both alignment marks; and pattern-exposing the object, wherein, while aligning at least three consecutive times, an alignment mark for third time aligning on the object is set in between alignment marks respectively for second time aligning and first time aligning, or at a position on an opposite side to a side in which the alignment mark for second time aligning is located with respect to the alignment mark for first time aligning.
    • 用于对准曝光掩模的方法包括:使用多个全息掩模,在其上形成对准标记; 通过使用两个对准标记将全息掩模对准位置朝向待曝光的物体上并且还形成有对准标记,多次; 并且对所述物体进行图案曝光,其中,在对准至少三次的同时,在对准标记之间分别设置用于第三次对准物体的对准标记,用于第二次对准和第一次对准,或者在相对的位置上的位置 一侧到第二次对齐的对准标记相对于对准标记位于第一次对准的一侧。