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1. 发明授权

US08840725B2 Chamber with uniform flow and plasma distribution 有权
标题翻译：具有均匀流动和等离子体分布的腔室
公开(公告)号：US08840725B2
公开(公告)日：2014-09-23
申请号：US12884978
申请日：2010-09-17
申请人： David Palagashvili , Michael D. Willwerth , Alex Erenstein , Jingbao Liu
发明人： David Palagashvili , Michael D. Willwerth , Alex Erenstein , Jingbao Liu
IPC分类号： C23C16/455 , C23C16/50 , C23C16/509 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32816 , H01J37/32844
摘要： Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween.
摘要翻译：本发明的实施例提供了一种循环衬垫系统，其有助于提供更接近于布置在用于处理衬底（例如，处理室）的设备内的衬底的表面的气体的均匀流动。在一些实施例中，递归衬垫系统可以包括具有外部部分的外部衬套，所述外部部分被配置为对准处理室的壁，从外部向内延伸的底部，以及从底部向上延伸以限定孔 ; 以及内衬，其具有被配置为至少部分地设置在所述孔中的下部，以与所述外衬垫一起限定其间的递归流动路径。

2. 发明申请

US20140034241A1 TEMPERATURE ENHANCED ELECTROSTATIC CHUCKING IN PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工装置中的温度增强静电切割
公开(公告)号：US20140034241A1
公开(公告)日：2014-02-06
申请号：US14051340
申请日：2013-10-10
申请人： Sergy G. Belostotskiy , Michael G. Chafin , Jingbao Liu , David Palagashvili
发明人： Sergy G. Belostotskiy , Michael G. Chafin , Jingbao Liu , David Palagashvili
IPC分类号： H01J37/20
CPC分类号： H01J37/20 , H01J37/32715 , H01J37/32724 , H01J2237/334 , H01L21/67109 , H01L21/6831
摘要： Methods and systems for temperature enhanced chucking and dechucking of resistive substrates in a plasma processing apparatus are described herein. In certain embodiments, methods and systems incorporate modulating a glass carrier substrate temperature during a plasma etch process to chuck and dechuck the carrier at first temperatures elevated relative to second temperatures utilized during plasma etching. In embodiments, one or more of plasma heat, lamp heat, resistive heat, and fluid heat transfer are controlled to modulate the carrier substrate temperature between chucking temperatures and process temperatures with each run of the plasma etch process.
摘要翻译：本文描述了用于等离子体处理装置中的电阻衬底的温度升高夹持和脱扣的方法和系统。在某些实施方案中，方法和系统包括在等离子体蚀刻工艺期间调节玻璃载体衬底温度，以在相对于在等离子体蚀刻期间使用的第二温度升高的第一温度下卡住和剥离载体。在实施例中，控制等离子体热，灯热，电阻热和流体热传递中的一种或多种，以在等离子体蚀刻工艺的每次运行中调制夹持温度和工艺温度之间的载体衬底温度。

3. 发明申请

US20120048467A1 COMPONENT TEMPERATURE CONTROL BY COOLANT FLOW CONTROL AND HEATER DUTY CYCLE CONTROL 有权
标题翻译：通过冷却液流量控制和加热器占空比控制的组件温度控制
公开(公告)号：US20120048467A1
公开(公告)日：2012-03-01
申请号：US13040149
申请日：2011-03-03
申请人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
发明人： Chetan Mahadeswaraswamy , Kartik Ramaswamy , Bryan Liao , Sergio Shoji , Duy D. Nguyen , Hamid Noorbakhsh , David Palagashvili
IPC分类号： C23F1/08 , F28F27/00 , G05D7/06 , G05D23/19 , B05C11/00 , C23C16/52
CPC分类号： G05D23/19 , G05B15/02 , H01J37/32522 , H01J37/32724 , H01J37/32908 , H01J37/3299 , H01L21/67248
摘要： Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.
摘要翻译：用于控制等离子体处理室中的温度的方法和系统，用于广泛的设定点温度和降低的能量消耗。通过等离子体处理模块控制器实现的控制算法，在冷却液回路和热源之间进行温度控制。控制算法可以响应于指示实际温度低于设定点温度的反馈信号，完全停止冷却剂液体流向温度控制部件的流动。控制算法还可以至少部分地基于从等离子体功率导出的前馈控制信号或在处理配方执行期间输入到处理室中的等离子体功率的改变。

4. 发明申请

US20090236315A1 SHIELDED LID HEATER ASSEMBLY 有权
标题翻译：屏蔽式加热器总成
公开(公告)号：US20090236315A1
公开(公告)日：2009-09-24
申请号：US12408348
申请日：2009-03-20
申请人： Michael D. Willwerth , David Palagashvili , Valentin N. Todorow , Stephen Yuen
发明人： Michael D. Willwerth , David Palagashvili , Valentin N. Todorow , Stephen Yuen
IPC分类号： B44C1/22 , H05B6/10 , C23C16/46 , C23C14/34
CPC分类号： H01J37/321 , C23C14/22 , C23C16/44 , H01F21/12 , H01J37/32321 , H01J37/32522 , H01J37/32623 , H01J37/32935 , H01J2237/327 , H01J2237/334 , H01L21/67017 , H01L21/67069 , H05B6/02 , H05B6/108
摘要： A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element.
摘要翻译：提供适用于等离子体处理室的屏蔽盖加热器盖加热器，具有屏蔽盖加热器的等离子体处理室和等离子体处理方法。该方法和装置增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。在一个实施例中，提供了一种屏蔽盖加热器，其包括铝基座和夹持加热器元件的RF屏蔽。

5. 发明申请

US20090057269A1 Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection 有权
标题翻译：在具有独立晶片边缘工艺气体注入的等离子体反应器中处理工件的方法
公开(公告)号：US20090057269A1
公开(公告)日：2009-03-05
申请号：US11899613
申请日：2007-09-05
申请人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
发明人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
IPC分类号： C03C25/68
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/3065
摘要： The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
摘要翻译：本公开涉及在晶片边缘处使用独立气体注入来处理工件或在等离子体反应器室中的方法。

6. 发明申请

US20080179289A1 PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL WITH A PLASMA STREAM 审中-公开
标题翻译：用等离子体流除去背面聚合物的方法
公开(公告)号：US20080179289A1
公开(公告)日：2008-07-31
申请号：US11685769
申请日：2007-03-14
申请人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： KENNETH S. COLLINS , Hiroji Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorov , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C23F1/00
CPC分类号： H01L21/68764 , H01J37/32357 , H01J37/32366 , H01L21/67069 , H01L21/67115 , H01L21/68728
摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. The process further includes confining gas flow at an edge of the workpiece within a gap at the edge of the workpiece on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. A first plasma is generated in a local plasma chamber from a polymer etch precursor gas. The process includes directing a localized stream of an etchant by-product from the first plasma onto a target portion of the backside of the workpiece, the target portion having a diameter corresponding to a diameter of the stream, while rotating the workpiece.
摘要翻译：提供了从工件的背面除去聚合物的方法。该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。该方法还包括将工件的边缘处的气流限制在工件边缘的间隙中约为室直径的约1％，间隙限定了包含前侧的上工艺区域之间的边界和一个含有背面的下部工艺区。在聚合物蚀刻前体气体的局部等离子体室中产生第一等离子体。该方法包括将来自第一等离子体的蚀刻剂副产物的局部流引导到工件的背面的目标部分上，目标部分具有对应于流的直径的直径，同时旋转工件。

7. 发明申请

US20080179287A1 PROCESS FOR WAFER BACKSIDE POLYMER REMOVAL WITH WAFER FRONT SIDE GAS PURGE 审中-公开
标题翻译：使用WAFER FRONT GIDE PURGE去除后置聚合物的方法
公开(公告)号：US20080179287A1
公开(公告)日：2008-07-31
申请号：US11685766
申请日：2007-03-14
申请人： Kenneth S. Collins , Hirojii Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
发明人： Kenneth S. Collins , Hirojii Hanawa , Andrew Nguyen , Ajit Balakrishna , David Palagashvili , James P. Cruse , Jennifer Y. Sun , Valentin N. Todorow , Shahid Rauf , Kartik Ramaswamy , Gerhard M. Schneider , Imad Yousif , Martin Jeffrey Salinas
IPC分类号： C23F1/00
CPC分类号： H01L21/0209 , H01L21/02063 , H01L21/31138
摘要： A process is provided for removing polymer from a backside of a workpiece. The process includes supporting the workpiece on the backside in a vacuum chamber while leaving a peripheral annular portion of the backside exposed. Gas flow is confined at the edge of the workpiece within a gap at the edge of the workpiece, the gap configured to be on the order of about 1% of the diameter of the chamber, the gap defining a boundary between an upper process zone containing the front side and a lower process zone containing the backside. The process further includes evacuating the lower process zone, generating a plasma in an external chamber from a polymer etch precursor gas, and introducing a by-product from the plasma into the lower process zone. The process further includes pumping a purge gas into the upper process zone to remove polymer etch species from the upper process zone.
摘要翻译：提供了从工件的背面除去聚合物的方法。该工艺包括在真空室的背面支撑工件，同时使背面的外围环形部分露出。气体流动被限制在工件的边缘处的工件边缘的间隙内，该间隙构造成约为室直径的约1％，间隙限定了含有前侧和一个含有背面的下部工艺区。该方法进一步包括排空下部工艺区域，从聚合物蚀刻前体气体在外部室中产生等离子体，以及将副产物从等离子体引入下部工艺区域。该方法还包括将净化气体泵入上部工艺区域以从上部工艺区域去除聚合物蚀刻物质。

8. 发明授权

US06818096B2 Plasma reactor electrode 有权
标题翻译：等离子体反应器电极
公开(公告)号：US06818096B2
公开(公告)日：2004-11-16
申请号：US09834343
申请日：2001-04-12
申请人： Michael Barnes , David Palagashvili
发明人： Michael Barnes , David Palagashvili
IPC分类号： H01L2100
CPC分类号： H01J37/32009 , H01J37/32532
摘要： A plasma reactor electrode, a method of making it, and a plasma reaction chamber employing the inventive electrode, wherein the electrode is configured to provide superior thermal conductivity characteristics. In the inventive electrode, first and second plates are connected by pins. In one embodiment, the pins, and the first and second plates are made of the same material, such as aluminum. The connection of the pins through the first and second plates provides superior thermal conductivity between the first and second plates. A dielectric cover, which may be made of ceramic or quartz, may be added below the lower plate. To form a showerhead assembly, holes are formed in the lower plate, and also in the dielectric cover, in alignment with a plenum chamber, to provide appropriate inlet for process gas into the chamber.
摘要翻译：等离子体反应器电极，其制造方法和采用本发明电极的等离子体反应室，其中电极构造成提供优异的导热特性。在本发明的电极中，第一和第二板通过销连接。在一个实施例中，销以及第一和第二板由相同的材料制成，例如铝。销穿过第一和第二板的连接在第一和第二板之间提供了优异的导热性。可以在下板下方添加可由陶瓷或石英制成的电介质覆盖物。为了形成喷头组件，在下板和介质盖中形成有与增压室对准的孔，以便为处理气体提供合适的入口。

9. 发明授权

US08580693B2 Temperature enhanced electrostatic chucking in plasma processing apparatus 失效
标题翻译：等离子体处理装置中的温度增强型静电吸盘
公开(公告)号：US08580693B2
公开(公告)日：2013-11-12
申请号：US13080561
申请日：2011-04-05
申请人： Sergey G. Belostotskiy , Michael G. Chafin , Jingbao Liu , David Palagashvili
发明人： Sergey G. Belostotskiy , Michael G. Chafin , Jingbao Liu , David Palagashvili
IPC分类号： H01L21/3065 , C23F1/00
CPC分类号： H01J37/20 , H01J37/32715 , H01J37/32724 , H01J2237/334 , H01L21/67109 , H01L21/6831
摘要： Methods and systems for temperature enhanced chucking and dechucking of resistive substrates in a plasma processing apparatus are described herein. In certain embodiments, methods and systems incorporate modulating a glass carrier substrate temperature during a plasma etch process to chuck and dechuck the carrier at first temperatures elevated relative to second temperatures utilized during plasma etching. In embodiments, one or more of plasma heat, lamp heat, resistive heat, and fluid heat transfer are controlled to modulate the carrier substrate temperature between chucking temperatures and process temperatures with each run of the plasma etch process.
摘要翻译：本文描述了用于等离子体处理装置中的电阻衬底的温度升高夹持和脱扣的方法和系统。在某些实施方案中，方法和系统包括在等离子体蚀刻工艺期间调节玻璃载体衬底温度，以在相对于在等离子体蚀刻期间使用的第二温度升高的第一温度下卡住和剥离载体。在实施例中，控制等离子体热，灯热，电阻热和流体热传递中的一种或多种，以在等离子体蚀刻工艺的每次运行中调制夹持温度和工艺温度之间的载体衬底温度。

10. 发明授权

US08270141B2 Electrostatic chuck with reduced arcing 有权
标题翻译：静电卡盘减少电弧
公开(公告)号：US08270141B2
公开(公告)日：2012-09-18
申请号：US12884967
申请日：2010-09-17
申请人： Michael D. Willwerth , David Palagashvili , Douglas A. Buchberger, Jr. , Michael G. Chafin
发明人： Michael D. Willwerth , David Palagashvili , Douglas A. Buchberger, Jr. , Michael G. Chafin
IPC分类号： H02T23/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.
摘要翻译：本文提供了静电卡盘的实施例。在一些实施例中，静电吸盘可以包括具有切口的上周边边缘的主体，该顶部边缘由垂直于主体侧壁的第一表面和设置在第一表面和主体上表面之间的阶梯状第二表面限定，沿着第一面穿过身体; 多个紧固件，其布置成穿过所述多个孔，以将所述主体连接到设置在所述主体下方的底座; 设置在所述主体上表面上方的电介质部件，以静电保持基板; 绝缘体环，其围绕所述主体设置在所述凹口的上周边边缘内并且具有与所述阶梯状的第二表面配合的阶梯状的内侧壁，以在其间界定非线性界面; 以及设置在所述绝缘体环上的边缘环，所述非线性界面限制所述边缘环和所述紧固件之间的电弧。

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