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1. 发明申请

US20190221657A1 SELF-ALIGNED AND ROBUST IGBT DEVICES 审中-公开
公开(公告)号：US20190221657A1
公开(公告)日：2019-07-18
申请号：US16249432
申请日：2019-01-16
申请人： IPOWER SEMICONDUCTOR
发明人： HAMZA YILMAZ
IPC分类号： H01L29/739 , H01L29/08 , H01L29/06 , H01L29/66 , H01L21/266 , H01L21/02 , H01L21/306
CPC分类号： H01L29/7397 , H01L21/0209 , H01L21/266 , H01L21/30604 , H01L29/0623 , H01L29/0821 , H01L29/66348
摘要： A vertical IGBT device is disclosed. The vertical IGBT structure includes an active MOSFET cell array formed in an active region at a front side of a semiconductor substrate of a first conductivity type. One or more column structures of a second conductivity type concentrically surround the active MOSFET cell array. Each column structure includes a column trench and a deep column region. The deep column region is formed by implanting implants of the second conductivity type into the semiconductor substrate through the floor of the column trench. Dielectric side wall spacers are formed on the trench side walls except a bottom wall of the trench and the column trench is filled with poly silicon of the second conductivity type. One or more column structures are substantially deeper than the active MOSFET cell array.

2. 发明申请

US20180062068A1 METHOD FOR MANUFACTURING FERROELECTRIC THIN FILM DEVICE 审中-公开
公开(公告)号：US20180062068A1
公开(公告)日：2018-03-01
申请号：US15559870
申请日：2016-03-02
申请人： SUMITOMO CHEMICAL COMPANY, LIMITED
发明人： Fumimasa HORIKIRI , Kenji SHIBATA , Kazutoshi WATANABE , Kazufumi SUENAGA
IPC分类号： H01L41/187 , H01L37/02 , H01L41/047 , H01L41/29 , H01L41/332 , H01L41/316 , H01L41/338 , H01L41/43
CPC分类号： H01L41/1873 , C23C14/34 , C23C14/35 , H01L21/02071 , H01L21/0209 , H01L21/304 , H01L37/025 , H01L41/0477 , H01L41/29 , H01L41/316 , H01L41/332 , H01L41/338 , H01L41/43
摘要： There is provided a method for manufacturing a ferroelectric thin film device including: a lower electrode film formation step of forming a lower electrode film on a substrate; a ferroelectric thin film formation step of forming a ferroelectric thin film made of a potassium sodium niobate on the lower electrode film; a ferroelectric thin film etching step of shaping the ferroelectric thin film into a desired micro-pattern by etching; and a thin film laminated substrate cleaning step of cleaning the substrate provided the ferroelectric thin film having a desired micro-pattern as a whole with a predetermined cleaning solution after the ferroelectric thin film etching step. The predetermined cleaning solution is a solution mixture containing hydrofluoric acid and ammonium fluoride, the hydrofluoric acid in the solution mixture having a molarity of 0.5 M or more and less than 5 M.

3. 发明申请

US20180040474A1 METAL-COMPOUND-REMOVING SOLVENT AND METHOD IN LITHOGRAPHY 审中-公开
公开(公告)号：US20180040474A1
公开(公告)日：2018-02-08
申请号：US15491066
申请日：2017-04-19
申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
发明人： An-Ren Zi , Joy Cheng , Ching-Yu Chang
IPC分类号： H01L21/027 , G03F7/16 , G03F7/20 , G03F7/38 , G03F7/32 , B08B3/08 , G03F7/40 , G03F7/42 , G03F7/039 , G03F7/038 , C11D11/00 , H01L21/02 , G03F7/095
CPC分类号： H01L21/0274 , B08B3/08 , C11D11/0047 , G03F7/0043 , G03F7/038 , G03F7/039 , G03F7/0752 , G03F7/094 , G03F7/095 , G03F7/11 , G03F7/162 , G03F7/168 , G03F7/2004 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/425 , G03F7/426 , G03F7/70033 , G03F7/70091 , G03F7/70233 , G03F7/70308 , H01L21/02052 , H01L21/0206 , H01L21/02087 , H01L21/0209 , H01L21/67051
摘要： A wafer is rinsed with a solvent. The wafer has an increased hydrophobicity as a result of being rinsed with the solvent. A metal-containing material is formed over the wafer after the wafer has been rinsed with the solvent. One or more lithography processes are performed at least in part using the metal-containing material. The metal-containing material is removed during or after the performing of the one or more lithography processes. The increased hydrophobicity of the wafer facilitates a removal of the metal-containing material.

4. 发明授权

US09887078B2 Single-wafer-type cleaning apparatus 有权
公开(公告)号：US09887078B2
公开(公告)日：2018-02-06
申请号：US14983530
申请日：2015-12-29
申请人： Samsung Electronics Co., Ltd.
发明人： Namsuk Kim , Ohhyung Kwon , Dae-Sung Kim , Jutaek Lim , Jaehyung Jung
IPC分类号： B08B3/00 , H01L21/02 , H01L21/67 , H01L21/687
CPC分类号： H01L21/0209 , H01L21/02041 , H01L21/02057 , H01L21/67028 , H01L21/67051 , H01L21/68792
摘要： A single-wafer-type cleaning apparatus is provided. The single-wafer-type cleaning apparatus is configured to be capable of controlling electrostatic charges generated due to rotating a wafer during a semiconductor cleaning process and a defect caused by the electrostatic charges. The cleaning process uses an ionizer mounted on a chuck.

5. 发明授权

US09716002B2 Substrate cleaning method 有权
公开(公告)号：US09716002B2
公开(公告)日：2017-07-25
申请号：US15204068
申请日：2016-07-07
申请人： TOKYO ELECTRON LIMITED
发明人： Yasushi Takiguchi , Taro Yamamoto , Akihiro Fujimoto , Shuuichi Nishikido , Dai Kumagai , Naoto Yoshitaka , Takahiro Kitano , Yoichi Tokunaga
IPC分类号： H01L21/02 , B08B3/02 , H01L21/67 , B08B1/00 , B08B1/04 , B08B5/02 , B08B7/00 , H01L21/687
CPC分类号： H01L21/0209 , B08B1/002 , B08B1/04 , B08B3/02 , B08B5/02 , B08B7/0057 , H01L21/67028 , H01L21/67046 , H01L21/67051 , H01L21/68742 , H01L21/68764
摘要： A disclosed substrate cleaning apparatus for cleaning a back surface of a substrate includes a first substrate supporting portion configured to support the substrate at a first area of a back surface of the substrate, the back surface facing down; a second substrate supporting portion configured to support the substrate at a second area of the back surface of the substrate, the second area being separated from the first area; a cleaning liquid supplying portion configured to supply cleaning liquid to the back surface of the substrate; a drying portion configured to dry the second area of the back surface of the substrate; and a cleaning portion configured to clean a third area of the back surface of the substrate when the substrate is supported by the first substrate supporting portion, the third area including the second area, and a fourth area of the back surface of the substrate when the substrate is supported by the second substrate supporting portion, the fourth area excluding the second area of the back surface.

6. 发明申请

US20170194134A1 REMOVING PARTICULATE CONTAMINANTS FROM THE BACKSIDE OF A WAFER OR RETICLE 审中-公开
公开(公告)号：US20170194134A1
公开(公告)日：2017-07-06
申请号：US15313027
申请日：2015-05-29
申请人： Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO
发明人： Sjoerd OOSTROM , Jacques Cor Johan VAN DER DONCK , Olaf KIEVIT , Nicole Ellen PAPEN-BOTTERHUIS
IPC分类号： H01L21/02 , B08B7/00 , G03F1/82 , H01L21/67 , H01L21/322
CPC分类号： H01L21/0209 , B08B7/0028 , G03F1/82 , G03F7/168 , H01L21/02096 , H01L21/3221 , H01L21/67046
摘要： The invention is directed to a method for removing particulate contaminants from the backside of a wafer or reticle, and to a cleaning substrate for use in such method. In the method of the invention particulate contaminants are removed from the backside of a wafer or reticle with a cleaning substrate. The cleaning substrate comprises protrusions and a tacky layer between the protrusions. The method comprises contacting the backside of the wafer or reticle with the protrusions of the cleaning substrate while maintaining a distance between the wafer or reticle and the tacky layer, the distance being in the range of 1-10 μm.

7. 发明申请

US20170040155A1 Removal of Particles on Back Side of Wafer 审中-公开
标题翻译：去除晶片背面的颗粒
公开(公告)号：US20170040155A1
公开(公告)日：2017-02-09
申请号：US15295731
申请日：2016-10-17
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
发明人： Hsun-Peng Lin , Hsin-Kuo Chang , Han-Chih Chung , Yueh-Chih Wang , Chi-Jen Hsieh
IPC分类号： H01L21/02 , B08B15/04 , B08B1/00 , H01L23/544 , H01L21/67
CPC分类号： H01L21/0209 , B08B1/002 , B08B15/04 , H01L21/02057 , H01L21/02087 , H01L21/67046 , H01L21/68 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure provides a method of cleaning a semiconductor wafer during a process of fabricating a semiconductor device. The method includes loading a semiconductor wafer into a wafer handling system. The method includes removing contaminant particles from an edge region of the wafer from the back side, wherein alignment marks are located in the edge region. The method includes collecting the removed contaminant particles and discarding the collected contaminant particles out of the wafer handling system. The disclosure also provides an apparatus for fabricating a semiconductor device. The apparatus includes a wafer cleaning device that is operable to clean a predetermined region of the wafer on the back surface thereof. The predetermined region of the wafer at least partially overlaps with one or more alignment marks.
摘要翻译：本公开提供了在制造半导体器件的工艺期间清洁半导体晶片的方法。该方法包括将半导体晶片加载到晶片处理系统中。该方法包括从背面从晶片的边缘区域去除污染物颗粒，其中对准标记位于边缘区域中。该方法包括收集去除的污染物颗粒并将收集的杂质颗粒丢弃出晶片处理系统。本公开还提供了一种用于制造半导体器件的装置。该装置包括晶片清洁装置，其可操作以清洁其背面上的晶片的预定区域。晶片的预定区域至少部分地与一个或多个对准标记重叠。

8. 发明申请

US20160172257A1 ETCHING PROCESSING METHOD AND BEVEL ETCHING APPARATUS 有权
标题翻译：蚀刻加工方法和水蚀蚀刻装置
公开(公告)号：US20160172257A1
公开(公告)日：2016-06-16
申请号：US14956542
申请日：2015-12-02
申请人： Tokyo Electron Limited
发明人： Masaki KONDO
IPC分类号： H01L21/66 , B23K26/03 , H01L21/02 , B23K26/362
CPC分类号： H01L22/26 , B23K26/032 , B23K26/361 , B23K26/362 , H01L21/0209 , H01L21/31138 , H01L21/6708 , H01L21/67115 , H01L21/67253 , H01L22/12
摘要： Disclosed is an etching processing method using a bevel etching apparatus for etching a substrate by irradiating a laser beam, the bevel etching apparatus including a laser generator and an image capturing unit. The method includes a process, by the image capturing unit, of capturing an image of an inner part of a processing container by illuminating the inner part of the processing container by scattered light of the laser beam emitted from the laser generator; a process of calculating brightness of an image of a predetermined area out of the captured image of the inner part of the processing container; and a process of monitoring, based on data indicating a correlation between an output value of the laser beam output from the laser generator and the brightness, the output value of the laser beam with respect to the calculated brightness.
摘要翻译：公开了一种蚀刻处理方法，该蚀刻处理方法使用用于通过照射激光来蚀刻衬底的斜面蚀刻装置，该斜面蚀刻装置包括激光发生器和图像捕获单元。该方法包括由图像捕获单元通过从激光发生器发射的激光束的散射光照亮处理容器的内部来捕获处理容器的内部部分的图像的处理; 从处理容器的内部的拍摄图像计算预定区域的图像的亮度的处理; 以及基于表示从激光发生器输出的激光束的输出值与亮度之间的相关性的数据，相对于计算出的亮度的激光束的输出值进行监视的处理。

9. 发明申请

US20160172184A1 METHOD FOR CLEANING A WAFER 审中-公开
标题翻译：清洗方法
公开(公告)号：US20160172184A1
公开(公告)日：2016-06-16
申请号：US14571706
申请日：2014-12-16
申请人： United Microelectronics Corp.
发明人： Tsung-Hsun Tsai
IPC分类号： H01L21/02 , B08B3/08
CPC分类号： H01L21/02052 , H01L21/0209
摘要： A method for cleaning a wafer is provided. The method comprises the following steps. First, a clean solution is provided with a first amount to a front side and a back side of the wafer. Next, the clean solution is provided with a second amount to the front side and the back side of the wafer, wherein the second amount is less than the first amount. And then, the clean solution and a nano-spray of the clean solution are provided with a third amount in total to the front side of the wafer, wherein the third amount is less than the second amount.
摘要翻译：提供了一种清洗晶片的方法。该方法包括以下步骤。首先，向晶片的前侧和后侧提供第一量的清洁溶液。接下来，清洁溶液在晶片的前侧和后侧设置有第二量，其中第二量小于第一量。然后，清洁溶液和清洁溶液的纳米喷雾总共提供到晶片的前侧，其中第三量小于第二量。

10. 发明授权

US09312122B2 Rinse liquid for insulating film and method of rinsing insulating film 有权
标题翻译：用于绝缘膜的冲洗液和冲洗绝缘膜的方法
公开(公告)号：US09312122B2
公开(公告)日：2016-04-12
申请号：US14090003
申请日：2013-11-26
申请人： Jin-Hee Bae , Han-Song Lee , Wan-Hee Lim , Go-Un Kim , Taek-Soo Kwak , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Youn-Jin Cho , Kwen-Woo Han , Byeong-Gyu Hwang
发明人： Jin-Hee Bae , Han-Song Lee , Wan-Hee Lim , Go-Un Kim , Taek-Soo Kwak , Bo-Sun Kim , Sang-Kyun Kim , Yoong-Hee Na , Eun-Su Park , Jin-Woo Seo , Hyun-Ji Song , Youn-Jin Cho , Kwen-Woo Han , Byeong-Gyu Hwang
IPC分类号： H01L21/02 , C11D11/00 , C11D7/50 , H01L27/108 , H01L49/02 , C11D7/26
CPC分类号： H01L21/0206 , C08G77/54 , C08G77/62 , C09D183/14 , C09D183/16 , C11D7/266 , C11D7/5022 , C11D11/0047 , H01L21/02087 , H01L21/0209 , H01L21/02164 , H01L21/02214 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L27/1085 , H01L28/40
摘要： A rinse liquid for an insulation layer, the rinse liquid including a solvent represented by the following Chemical Formula 1:
摘要翻译：一种用于绝缘层的冲洗液，所述漂洗液包括由以下化学式1表示的溶剂：

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