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    • 9. 发明申请
    • METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
    • 制造半导体器件的方法
    • US20110136338A1
    • 2011-06-09
    • US12689344
    • 2010-01-19
    • Kunsik ParkKyu-Ha BaekLee-Mi DoDong-Pyo KimJi Man Park
    • Kunsik ParkKyu-Ha BaekLee-Mi DoDong-Pyo KimJi Man Park
    • H01L21/768
    • H01L21/76898H01L21/2885
    • A method of fabricating a semiconductor device includes forming a via hole in a semiconductor substrate, forming an isolation layer on an inner side of the via hole, forming a diffusion barrier layer over an upper portion of the semiconductor substrate and the inner side of the via hole where the isolation layer is formed, arranging a solvent, which contains electrically charged metal particles, on the semiconductor substrate where the diffusion barrier layer is formed, and filling the via hole with the metal particles by moving the metal particles using applied external force. The applied external force said includes a voltage causing an electric current to flow between the semiconductor substrate and the solvent, an electrical field applied between the semiconductor substrate and the solvent, or a magnetic field applied between the semiconductor substrate and the solvent.
    • 一种制造半导体器件的方法包括在半导体衬底中形成通孔,在通孔的内侧形成隔离层,在半导体衬底的上部和通孔的内侧形成扩散阻挡层 形成隔离层的孔,在形成有扩散阻挡层的半导体衬底上布置含有带电荷的金属颗粒的溶剂,并通过使用外力移动金属颗粒来填充通孔。 所施加的外力包括导致电流在半导体衬底和溶剂之间流动的电压,施加在半导体衬底和溶剂之间的电场或施加在半导体衬底和溶剂之间的磁场。