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1. 发明申请

US20140023847A1 POLYIMIDE FILM AND METAL LAMINATE USING SAME 审中-公开
标题翻译：聚酰亚胺薄膜和金属层压板
公开(公告)号：US20140023847A1
公开(公告)日：2014-01-23
申请号：US14008320
申请日：2012-03-28
申请人： Takuro Kochiyama , Eiji Masui , Keiichi Yanagida , Takeshi Uekido
发明人： Takuro Kochiyama , Eiji Masui , Keiichi Yanagida , Takeshi Uekido
IPC分类号： H05K1/03
CPC分类号： H05K1/036 , B32B15/08 , B32B27/281 , B32B2255/10 , B32B2255/26 , B32B2307/31 , B32B2457/08 , C08G73/10 , H05K1/0393 , H05K3/022 , H05K2201/0154 , Y10T428/31681 , Y10T428/31721
摘要： A polyimide film having no foaming during heating or other problems, as well as a polyimide laminate-metal laminate in which the polyimide film and a metal layer are laminated. The polyimide film includes a polyimide layer (b), and a polyimide layer (a) laminated in contact with the polyimide layer (b), a side of the polyimide layer (b) which is not in contact with the polyimide layer (a) exhibits thermal fusion bondability, a side of the polyimide layer (a) which is not in contact with the polyimide layer (b) does not exhibit thermal fusion bondability, and the polyimide layer (a) includes a polyimide formed from a tetracarboxylic acid component containing 2,3,3′,4′-biphenyltetracarboxylic dianhydride and a diamine component.
摘要翻译：在加热等问题中不发泡的聚酰亚胺膜，以及聚酰亚胺膜和金属层被层叠的聚酰亚胺层叠金属层叠体。聚酰亚胺膜包括聚酰亚胺层（b）和与聚酰亚胺层（b）接触层压的聚酰亚胺层（a），不与聚酰亚胺层（a）接触的聚酰亚胺层（b）的一侧，表现出热熔融粘合性，与聚酰亚胺层（b）不接触的聚酰亚胺层（a）的一侧不具有热熔融粘合性，并且聚酰亚胺层（a）包含由四羧酸组分形成的聚酰亚胺，其含有 2,3,3'，4'-联苯四羧酸二酐和二胺组分。

2. 发明申请

US20110084419A1 METHOD FOR PRODUCING AROMATIC POLYIMIDE FILM WHEREIN LINEAR EXPANSION COEFFICIENT IN TRANSVERSE DIRECTION IS LOWER THAN LINEAR EXPANSION COEFFICIENT IN MACHINE DIRECTION 审中-公开
标题翻译：用于制造横向方向线性膨胀系数的芳族聚酰亚胺膜的方法低于线性膨胀系数在机器方向上的方法
公开(公告)号：US20110084419A1
公开(公告)日：2011-04-14
申请号：US12995556
申请日：2009-06-02
申请人： Takeshi Uekido , Nobu Ilzumi , Toshiyuki Nishino , Eiji Masui , Keiichi Yanagida
发明人： Takeshi Uekido , Nobu Ilzumi , Toshiyuki Nishino , Eiji Masui , Keiichi Yanagida
IPC分类号： B29D7/01
CPC分类号： B29C41/003 , B29C41/24 , B29C55/08 , B29D7/01 , B29K2077/10 , B29K2079/08 , B29L2007/008 , C08G73/1067 , C08J5/18 , C08J2379/08 , C08L79/08
摘要： An aromatic polyimide film having a TD linear expansion coefficient lower than that MD linear expansion coefficient is produced by an industrially advantageous process which is performed under such conditions that a self-supporting aromatic polyimide precursor film having a solvent content of 25-45 wt. % and an imidation ratio of 5-40% is prepared and stretched in the transverse direction under heating initially at 80-240° C. and the stretched self-supporting aromatic polyimide precursor film is subsequently converted to a self-supporting aromatic polyimide film by heating the precursor film at 350-580° C.
摘要翻译：通过工业上有利的方法制造TD线膨胀系数低于MD线性膨胀系数的芳香族聚酰亚胺膜，该方法是在具有25〜45重量％的溶剂含量的自支撑芳香族聚酰亚胺前体膜的条件下进行的。％，酰亚胺化率为5-40％，最初加热至80-240℃，在宽度方向拉伸，拉伸的自支撑芳族聚酰亚胺前体膜随后通过以下方式转化为自支撑芳族聚酰亚胺膜：在350-580℃下加热前体膜

3. 发明申请

US20120028061A1 POLYIMIDE FILM FOR METALLIZING, METHOD FOR PRODUCING SAME, AND METAL-LAMINATED POLYIMIDE FILM 审中-公开
标题翻译：用于金属化的聚酰亚胺膜，其制造方法和金属层压聚酰亚胺膜
公开(公告)号：US20120028061A1
公开(公告)日：2012-02-02
申请号：US13264520
申请日：2010-04-14
申请人： Naoyuki Matsumoto , Hidenori Mii , Takeshi Uekido , Nobu Iizumi , Keiichi Yanagida , Eiji Masui , Toshiyuki nishino , Takao Miyamoto
发明人： Naoyuki Matsumoto , Hidenori Mii , Takeshi Uekido , Nobu Iizumi , Keiichi Yanagida , Eiji Masui , Toshiyuki nishino , Takao Miyamoto
IPC分类号： B32B27/06 , B05D3/02
CPC分类号： H05K1/0346 , B29C41/24 , B29C55/04 , B29K2079/08 , B32B7/12 , B32B15/08 , B32B15/20 , B32B27/281 , B32B2255/10 , B32B2255/205 , B32B2307/306 , B32B2307/3065 , B32B2307/308 , B32B2307/516 , B32B2307/546 , B32B2307/714 , B32B2307/732 , B32B2457/08 , C08G73/1042 , C08G73/1046 , C08G73/105 , C08G73/1067 , C08G73/1071 , C09D179/08 , H05K3/388 , H05K3/389 , H05K2201/0154 , Y10T428/31721
摘要： The present invention provides a polyimide film for metallizing, which has an anisotropic thermal expansion coefficient, and comprises a polyimide layer (b) and a polyimide layer (a) on one side or both sides of the polyimide layer (b); wherein the polyimide layer (b) is a layer of a polyimide prepared from an acid component comprising 3,3′,4,4′-biphenyltetracarboxylic dianhydride and a diamine component comprising p-phenylenediamine; and the polyimide layer (a) is a layer of a polyimide prepared from a monomer component comprising at least one selected from the group consisting of phenylenediamines and diaminodiphenyl ethers as a diamine component, and contains a surface treatment agent.
摘要翻译：本发明提供一种具有各向异性热膨胀系数的金属化用聚酰亚胺膜，在聚酰亚胺层（b）的一侧或两面包含聚酰亚胺层（b）和聚酰亚胺层（a）。其中所述聚酰亚胺层（b）是由包含3,3'，4,4'-联苯四羧酸二酐的酸组分和包含对苯二胺的二胺组分制备的聚酰亚胺层; 并且聚酰亚胺层（a）是由包含选自由苯二胺和作为二胺成分的二氨基二苯基醚组成的组中的至少一种的单体组分制备的聚酰亚胺层，并且含有表面处理剂。

4. 发明授权

US07482737B2 Aluminum nitride thin film, composite film containing the same and piezoelectric thin film resonator using the same 有权
标题翻译：氮化铝薄膜，含有其的复合膜和使用其的压电薄膜谐振器
公开(公告)号：US07482737B2
公开(公告)日：2009-01-27
申请号：US11546765
申请日：2006-10-12
申请人： Tetsuo Yamada , Keigo Nagao , Eiji Masui
发明人： Tetsuo Yamada , Keigo Nagao , Eiji Masui
IPC分类号： H03H9/125
CPC分类号： H03H9/585 , H01L41/0477 , H03H3/02 , H03H9/02031 , H03H9/13 , H03H9/173 , H03H9/174 , H03H2003/021 , H03H2003/023
摘要： A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.
摘要翻译：压电薄膜谐振器具有基板和压电层叠结构，其包括下电极，具有c轴取向的压电氮化铝薄膜和在基板上依次形成的上电极。下电极由包含钌作为主要成分的层的金属薄膜制成，其中钌的（0002）钌衍射峰的摇摆曲线的全宽度半峰值（FWHM）为3.0°以下。形成在下电极上的压电氮化铝薄膜具有2.0°以下的（0002）衍射峰的摇摆曲线的全宽半最大值（FWHM）。

5. 发明申请

US20070080611A1 Aluminum nitride thin film, composite film containing the same and piezoelectric thin film resonator using the same 有权
标题翻译：氮化铝薄膜，含有其的复合膜和使用其的压电薄膜谐振器
公开(公告)号：US20070080611A1
公开(公告)日：2007-04-12
申请号：US11546765
申请日：2006-10-12
申请人： Tetsuo Yamada , Keigo Nagao , Eiji Masui
发明人： Tetsuo Yamada , Keigo Nagao , Eiji Masui
IPC分类号： H01L41/047
CPC分类号： H03H9/585 , H01L41/0477 , H03H3/02 , H03H9/02031 , H03H9/13 , H03H9/173 , H03H9/174 , H03H2003/021 , H03H2003/023
摘要： A piezoelectric thin film resonator has a substrate and a piezoelectric layered structure including a lower electrode, piezoelectric aluminum nitride thin film with c-axis orientation and upper electrode formed on the substrate in this order. The lower electrode are made of a metal thin film including a layer containing ruthenium as a major component having a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of ruthenium of 3.0° or less. The piezoelectric aluminum nitride thin film formed on the lower electrode has a full-width half maximum (FWHM) of a rocking curve of a (0002) diffraction peak of 2.0° or less.
摘要翻译：压电薄膜谐振器具有基板和压电层叠结构，其包括下电极，具有c轴取向的压电氮化铝薄膜和在基板上依次形成的上电极。下电极由包含钌作为主要成分的层的金属薄膜制成，其中钌的（0002）钌衍射峰的摇摆曲线的全宽度半峰值（FWHM）为3.0°以下。形成在下电极上的压电氮化铝薄膜具有2.0°以下的（0002）衍射峰的摇摆曲线的全宽半最大值（FWHM）。

6. 发明申请

US20120292800A1 PROCESS AND EQUIPMENT FOR PRODUCTION OF POLYIMIDE FILM 审中-公开
标题翻译：生产聚酰亚胺膜的工艺和设备
公开(公告)号：US20120292800A1
公开(公告)日：2012-11-22
申请号：US13575138
申请日：2011-01-24
申请人： Yohei Higuchi , Yasuhiro Nagoshi , Takeshi Uekido , Toshiyuki Nishino , Eiji Masui
发明人： Yohei Higuchi , Yasuhiro Nagoshi , Takeshi Uekido , Toshiyuki Nishino , Eiji Masui
IPC分类号： B29C39/44
CPC分类号： B29C41/28 , B29K2079/08 , C08J5/18 , C08J2379/08 , G01B11/0691 , G01N21/86 , G01N2021/869
摘要： Provided are a method and apparatus for the production of a polyimide film, which allow a polyimide film having physical properties with in-plane uniformity to be produced with high productivity. In the method for the production of a polyimide film, a solvent content of a self-supporting film is measured by infrared spectroscopy, and based on the measurement result, one or more kinds selected from a drying condition of a cast of a polyimide precursor solution, a post-heating condition of the self-supporting film, and an amount of extrusion of a polyimide precursor solution from a die are controlled.
摘要翻译：提供一种用于制造聚酰亚胺膜的方法和装置，其允许以高生产率制造具有面内均匀性的物理性质的聚酰亚胺膜。在制造聚酰亚胺膜的方法中，通过红外光谱法测定自支撑膜的溶剂含量，根据测定结果，选自聚酰亚胺前体溶液的铸件的干燥条件中的一种以上，自支撑膜的后加热条件以及来自模具的聚酰亚胺前体溶液的挤出量被控制。

7. 发明申请

US20120034455A1 POLYIMIDE FILM, METHOD FOR PRODUCING THE SAME, AND METAL-LAMINATED POLYIMIDE FILM 审中-公开
标题翻译：聚酰亚胺膜，其制造方法和金属层压聚酰亚胺膜
公开(公告)号：US20120034455A1
公开(公告)日：2012-02-09
申请号：US13264492
申请日：2010-04-14
申请人： Naoyuki Matsumoto , Hidenori Mii , Takeshi Uekido , Nobu Iizumi , Keiichi Yanagida , Eiji Masui , Toshiyuki Nishino , Takao Miyamoto
发明人： Naoyuki Matsumoto , Hidenori Mii , Takeshi Uekido , Nobu Iizumi , Keiichi Yanagida , Eiji Masui , Toshiyuki Nishino , Takao Miyamoto
IPC分类号： B32B15/08 , B29C55/02 , B32B27/08
CPC分类号： B29C55/04 , B29C41/24 , B29C41/28 , B29C55/08 , B29K2079/08 , B32B7/12 , B32B15/08 , B32B15/085 , B32B15/20 , B32B27/08 , B32B27/281 , B32B27/38 , B32B2255/10 , B32B2255/205 , B32B2307/514 , B32B2307/546 , B32B2307/732 , B32B2457/08 , C08G73/1042 , C08G73/1046 , C08G73/105 , C08G73/1067 , C08G73/1071 , C09D179/08 , C23C18/1641 , C23C18/165 , C23C18/31 , H05K1/0346 , H05K2201/0154 , Y10T428/265 , Y10T428/31681 , Y10T428/31721
摘要： The present invention provides a polyimide film having an anisotropic thermal expansion coefficient, and comprising a polyimide layer (b) and a polyimide layer (a) on one side or both sides of the polyimide layer (b), wherein the polyimide layer (a) is a layer of a polyimide prepared from a monomer component comprising a diamine having the structure of the following formula (1): wherein R represents a monovalent group selected from the groups listed as the following formula (2): wherein R1 represents a hydrogen atom or a methyl group, and two R1 groups may be the same as, or different from each other.
摘要翻译：本发明提供一种具有各向异性热膨胀系数的聚酰亚胺膜，在聚酰亚胺层（b）的一侧或两面上包含聚酰亚胺层（b）和聚酰亚胺层（a），其中聚酰亚胺层（a）是由包含具有下式（1）的结构的二胺的单体组分制备的聚酰亚胺层：其中R表示选自下列通式（2）所示的一价基团：其中R 1表示氢原子或甲基，并且两个R 1基团可以彼此相同或不同。

8. 发明授权

US06885260B2 Filter using film bulk acoustic resonator and transmission/reception switch 有权
标题翻译：使用薄膜体声波谐振器和发射/接收开关进行滤波
公开(公告)号：US06885260B2
公开(公告)日：2005-04-26
申请号：US10476218
申请日：2002-05-10
申请人： Kosuke Nishimura , Keigo Nagao , Chisen Hashimoto , Eiji Masui , Hirofumi Kimura
发明人： Kosuke Nishimura , Keigo Nagao , Chisen Hashimoto , Eiji Masui , Hirofumi Kimura
IPC分类号： H03H7/19 , H03H9/05 , H03H9/58 , H04B1/52 , H03H9/70 , H03H9/56
CPC分类号： H03H9/706 , H03H7/19 , H03H9/0571 , H04B1/52
摘要： A transmission band filter (110) having a series of elements (111, 113, 115) each composed of a film bulk acoustic resonator and grounded shunt elements (112, 114) each composed of a film bulk acoustic resonator is connected between a transmission port (102) and an antenna port (106). A reception band filter (130) having a series of elements (131, 133, 135) each composed of a film bulk acoustic resonator and grounded shunt elements (132, 134, 136) each composed of a film bulk acoustic resonator is connected between a reception port (104) and the antenna port (106). A film bulk acoustic resonator (150) for adjustment is connected between the antenna port (106) and the ground. The resonance frequency of the adjusting film bulk acoustic resonator (150) lies between the upper limit frequency of the transmission frequency pass band of the transmission band filter (110) and the lower limit frequency of the reception frequency pass band of the reception band filter (130). Therefore a duplexer such that it can be a monolithic element, the power handling capability is good, the size is small, and the cost is low is provided.
摘要翻译：具有由薄膜体声波谐振器构成的一系列元件（111,113,115）的传输带滤波器（110）和由薄膜体声共振器构成的接地分流元件（112,114）连接在传输端口（102）和天线端口（106）。具有由薄膜体声波谐振器和由薄膜体声波谐振器组成的接地分路元件（132,134,136）构成的一系列元件（131,133,135）的接收带滤波器（130）连接在接收端口（104）和天线端口（106）。用于调整的薄膜体声共振器（150）连接在天线端口（106）和地面之间。调整膜体声波谐振器（150）的共振频率位于传输带滤波器（110）的发送频率通带的上限频率与接收频带滤波器的接收频率通带的下限频率之间 130）。因此，双工器可以是单片元件，功率处理能力好，尺寸小，成本低廉。

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